DISCRETE SEMICONDUCTORS DATA SHEET PDTC143T series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product data sheet Supersedes data of 2004 Apr 06 2004 Aug 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open FEATURES PDTC143T series QUICK REFERENCE DATA • Built-in bias resistors SYMBOL • Simplified circuit design VCEO • Reduction of component count • Reduced pick and place costs. APPLICATIONS PARAMETER TYP. MAX. UNIT collector-emitter voltage − 50 V IO output current (DC) − 100 mA R1 bias resistor 4.7 − kΩ R2 open − − − • General purpose switching and amplification • Inverter and interface circuits DESCRIPTION • Circuit applications. NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW PACKAGE TYPE NUMBER MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC143TE SOT416 SC-75 40 PDTA143TE PDTC143TEF SOT490 SC-89 11 PDTA143TEF PDTC143TK SOT346 SC-59 52 PDTA143TK PDTC143TM SOT883 SC-101 DM PDTA143TM PDTC143TS SOT54 (TO-92) SC-43 TC143T PDTA143TS PDTC143TT SOT23 − *33(1) PDTA143TT PDTC143TU SOT323 SC-70 *52(1) PDTA143TU Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 2004 Aug 06 2 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series SIMPLIFIED OUTLINE, SYMBOL AND PINNING PINNING TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL PIN PDTC143TS handbook, halfpage 2 1 DESCRIPTION 1 base 2 collector 3 emitter 1 base 2 emitter 3 collector 1 base 2 emitter 3 collector R1 1 2 3 3 MAM361 PDTC143TE PDTC143TEF PDTC143TK handbook, halfpage 3 3 R1 PDTC143TT 1 PDTC143TU 2 2 1 Top view MDB270 PDTC143TM handbook, halfpage 3 R1 2 1 3 1 2 Bottom view MHC507 2004 Aug 06 3 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION PDTC143TE − plastic surface mounted package; 3 leads SOT416 PDTC143TEF − plastic surface mounted package; 3 leads SOT490 PDTC143TK − plastic surface mounted package; 3 leads SOT346 PDTC143TM − leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 PDTC143TS − plastic single-ended leaded (through hole) package; 3 leads SOT54 PDTC143TT − plastic surface mounted package; 3 leads SOT23 PDTC143TU − plastic surface mounted package; 3 leads SOT323 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 50 V VEBO emitter-base voltage open collector − 5 V IO output current (DC) − 100 mA ICM collector current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT54 note 1 − 500 mW SOT23 note 1 − 250 mW SOT346 note 1 − 250 mW SOT323 note 1 − 200 mW SOT490 notes 1 and 2 − 250 mW SOT883 notes 2 and 3 − 250 mW SOT416 note 1 − 150 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. 2004 Aug 06 4 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-a) CONDITIONS thermal resistance from junction to ambient VALUE UNIT in free air SOT54 note 1 250 K/W SOT23 note 1 500 K/W SOT346 note 1 500 K/W SOT323 note 1 625 K/W SOT490 notes 1 and 2 500 K/W SOT883 notes 2 and 3 500 K/W SOT416 note 1 833 K/W Notes 1. Refer to standard mounting conditions. 2. Reflow soldering is the only recommended soldering method. 3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector-base cut-off current VCB = 50 V; IE = 0 A − − 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A − − 1 μA VCE = 30 V; IB = 0 A; Tj = 150 °C − − 50 μA nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A − − 100 hFE DC current gain VCE = 5 V; IC = 1 mA 200 − − VCEsat collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV R1 input resistor 3.3 4.7 6.1 kΩ Cc collector capacitance − − 2.5 pF 2004 Aug 06 IE = ie = 0 A; VCB = 10 V; f = 1 MHz 5 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series PACKAGE OUTLINES Plastic surface-mounted package; 3 leads SOT490 D E B A X HE v M A 3 A 1 c 2 e1 bp w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp v w mm 0.8 0.6 0.33 0.23 0.2 0.1 1.7 1.5 0.95 0.75 1.0 0.5 1.7 1.5 0.5 0.3 0.1 0.1 OUTLINE VERSION SOT490 2004 Aug 06 REFERENCES IEC JEDEC JEITA SC-89 6 EUROPEAN PROJECTION ISSUE DATE 05-07-28 06-03-16 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series Plastic surface-mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 2004 Aug 06 REFERENCES IEC JEDEC JEITA TO-236 SC-59A 7 EUROPEAN PROJECTION ISSUE DATE 04-11-11 06-03-16 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Aug 06 REFERENCES IEC JEDEC JEITA SC-101 8 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 2004 Aug 06 REFERENCES IEC JEDEC JEITA TO-92 SC-43A 9 EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 2004 Aug 06 REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 TO-236AB 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT323 2004 Aug 06 REFERENCES IEC JEDEC JEITA SC-70 11 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION SOT416 2004 Aug 06 REFERENCES IEC JEDEC JEITA SC-75 12 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open PDTC143T series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. 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Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Aug 06 13 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/06/pp14 Date of release: 2004 Aug 06 Document order number: 9397 750 13675