SSF2810EH2
Main Product Characteristics:
VDSS
20V
RDS(on)
10mΩ (typ.)
ID
8A①
TSSOP-8
Advanced MOSFET process technology
Ultra low on-resistance with low gate charge
High Power and current handing capability
150℃ operating temperature
G/S ESD protect 2KV (HBM)
Schematic diagram
Assignment
Features and Benefits:
Marking and pin
Description:
The SSF2810EH2 series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current
8①
ID @ TC = 100°C
Continuous Drain Current
6.2 ①
IDM
Pulsed Drain Current ②
25
Power Dissipation ③
2
W
Linear Derating Factor
0.5
W/°C
VDS
Drain-Source Voltage
20
V
VGS
Gate-to-Source Voltage
± 10
V
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
Units
A
Thermal Resistance
Symbol
Characterizes
RθJA
Junction-to-ambient (t ≤ 10s) ④
©Silikron Semiconductor CO., LTD.
2013.09.20
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Typ.
Max.
Units
—
90
℃/W
Version: 1.0
page 1 of 7
SSF2810EH2
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Min.
Typ.
Max.
Units
20
—
—
V
—
10
14
—
20
—
—
14
18
—
25
—
—
20
23
—
38
—
0.6
—
1
—
—
1
—
—
50
—
—
100
—
—
-100
—
—
10
—
—
-10
Qg
Total gate charge
—
10
—
Qgs
Gate-to-Source charge
—
2.3
—
Qgd
Gate-to-Drain("Miller") charge
—
3
—
td(on)
Turn-on delay time
—
8.1
—
tr
Rise time
—
49
—
td(off)
Turn-Off delay time
—
26
—
tf
Fall time
—
8.7
—
Ciss
Input capacitance
—
950
—
Coss
Output capacitance
—
209
—
Crss
Reverse transfer capacitance
—
100
—
mΩ
mΩ
mΩ
V
μA
nA
uA
Conditions
VGS = 0V, ID = 250μA
VGS=4.5V,ID = 8A
TJ = 125°C
VGS=2.5V,ID = 6.5A
TJ = 125°C
VGS=1.8V,ID = 6A
TJ = 125°C
VDS = VGS, ID = 250μA
VDS = 20V,VGS = 0V
TJ = 125°C
VGS = 4.5V
VGS = -4.5V
VGS = 10V
VGS = -10V
ID = 8A,
nC
VDS=10V,
VGS = 4.5V
ns
VGS=4.5V, VDS =10V,
RGEN=3Ω,ID =6.5
VGS = 0V
pF
VDS = 10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
8①
A
—
—
25
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.2
V
IS=2.8A, VGS=0V
trr
Reverse Recovery Time
—
35
—
nS
TJ = 25°C, IF =1A,
Qrr
Reverse Recovery Charge
—
7.2
—
nC
di/dt = 100A/μs
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 2 of 7
SSF2810EH2
Test circuits and Waveforms
EAS Test Circuit:
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 3 of 7
SSF2810EH2
Typical electrical and thermal characteristics
Figure2. Typical Capacitance Vs. Drain-to-Source Voltage
Figure 1: Typical Output Characteristics
Figure 3. Maximum Drain Current Vs. Case Temperature
Figure4. Maximum Effective Transient Thermal Impedance,
Junction-to-Case
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 4 of 7
SSF2810EH2
Mechanical Data：
TSSOP-8
Dimensions in Millimeters (UNIT:mm)
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 5 of 7
SSF2810EH2
Ordering and Marking Information
Device Marking: 2810EH2
Package (Available)
TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/
Tube
Tubes/Inner
Box
Units/Inner Inner
Box
Boxes/Carton
Box
Units/Carton
Box
TSSOP-8
3000
2
6000
48000
8
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃@ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 6 of 7
SSF2810EH2
ATTENTION:
■
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
should always evaluate and test devices mounted in the customer’s products or equipment.
Silikron Semiconductor CO.,LTD. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to
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Any and all information described or contained herein are subject to change without notice due to
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
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