SSF47NS60H
Main Product Characteristics:
VDSS
600V
RDS(on) 0.059ohm(typ.)
ID
47A
TO247
Schematic diagram
Features and Benefits:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description:
The SSF47NS60H series MOSFETs is a new technology，which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
47
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
29.7
IDM
Pulsed Drain Current②
142
Power Dissipation③
208
W
Linear Derating Factor
3.12
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=40.2mH
1267.4
mJ
IAS
Avalanche Current @ L=20.6mH
9.5
A
-55 to + 150
°C
PD @TC = 25°C
TJ
TSTG
Operating Junction and Storage Temperature Range
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SSF47NS60H
Thermal Resistance
Symbol
Characterizes
Typ.
Max.
Units
RθJC
Junction-to-case③
—
0.32
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
50
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
V(BR)DSS
Drain-to-Source breakdown voltage
600
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Typ.
Max.
Units
—
—
V
VGS = 0V, ID = 250μA
—
0.059
0.07
Ω
VGS=10V,ID = 23A
2
—
4
—
2.4
—
—
—
1
—
—
50
—
—
100
-100
—
—
Total gate charge
—
125
—
Qgs
Gate-to-Source charge
—
29
—
Qgd
Gate-to-Drain("Miller") charge
—
46
—
QSW
Gate-to-Source crossover charge
—
18
—
td(on)
Turn-on delay time
—
36
—
tr
Rise time
—
83
—
td(off)
Turn-Off delay time
—
135
—
tf
Fall time
—
17
—
Ciss
Input capacitance
—
4000
—
Coss
Output capacitance
—
8400
—
Crss
Reverse transfer capacitance
—
770
—
V
μA
nA
Conditions
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 47A,
nC
VDS=480V,
VGS = 10V
VGS=10V, VDS=400V,
ns
RGEN=8.2Ω
ID=23A
VGS = 0V
pF
VDS = 10V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
47
A
—
—
141
A
Conditions
MOSFET symbol
showing
the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.2
V
IS=20A, VGS=0V
trr
Reverse Recovery Time
—
470
—
ns
TJ = 25°C, IF =23.5A, di/dt =
Qrr
Reverse Recovery Charge
—
8.7
—
uC
80A/μs
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SSF47NS60H
Test circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
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SSF47NS60H
Typical electrical and thermal characteristics
Figure 1: Power
Figure 2. Typ. Gate to source cut-off voltage
dissipation
Figure 3. Typ. Gate charge
©Silikron Semiconductor CO.,LTD.
Figure 4: Typ. Capacitances
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SSF47NS60H
Typical electrical and thermal characteristics
Figure 5. Typ. Output Characteristics
Figure 7. Typ. Transfer Characteristics
©Silikron Semiconductor CO.,LTD.
Figure 6. Drain-source on-state resistance
Figure 8. Drain-source on-state resistance
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SSF47NS60H
Mechanical Data：
TO247 PACKAGE OUTLINE DIMENSION
©Silikron Semiconductor CO.,LTD.
2015.03.20
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SSF47NS60H
Ordering and Marking Information
Device Marking: SSF47NS60H
Package (Available)
TO247
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
TO247
Units/
Tube
Tubes/Inner
Box
30
8
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Units/Inner Inner
Box
Boxes/Carton
Box
240
5
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
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2015.03.20
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Units/Carton
Box
1200
page 7 of 8
SSF47NS60H
ATTENTION:
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Any and all Silikron products described or contained herein do not have specifications that can handle applications
that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other
applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Silikron representative nearest you before using any Silikron products described or contained
herein in such applications.
Silikron assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed
in products specifications of any and all Silikron products described or contained herein.
Specifications of any and all Silikron products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer
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Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Suzhou Silikron Semiconductor Corp.
11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China
TEL: (86-512) 62560688
FAX: (86-512) 65160705
E-mail: [email protected]
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