PDTA123Y series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 04 — 3 September 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors (RET). Table 1. Product overview Type number NXP JEITA JEDEC NPN complement PDTA123YE SOT416 SC-75 - PDTC123YE PDTA123YK SOT346 SC-59A TO-236 PDTC123YK PDTA123YM SOT883 SC-101 - PDTC123YM PDTA123YS[1] SOT54 SC-43A TO-92 PDTC123YS PDTA123YT SOT23 - TO-236AB PDTC123YT PDTA123YU SOT323 SC-70 - PDTC123YU [1] Package Also available in SOT54A and SOT54 variant packages (see Section 2) 1.2 Features n Built-in bias resistors n Simplifies circuit design n Reduces component count n Reduces pick and place costs 1.3 Applications n General purpose switching and amplification n Inverter and interface circuits n Circuit drivers 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions VCEO collector-emitter voltage open base IO output current (DC) R1 bias resistor 1 (input) R2/R1 bias resistor ratio Min Typ Max Unit - - −50 V - - −100 mA 1.54 2.2 2.86 kΩ 3.6 4.5 5.5 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 2. Pinning information Table 3. Pinning Pin Description Simplified outline Symbol SOT54 1 input (base) 2 output (collector) 3 GND (emitter) 2 R1 1 2 3 1 R2 001aab347 3 006aaa148 SOT54A 1 input (base) 2 output (collector) 3 GND (emitter) 2 R1 1 2 1 R2 3 001aab348 3 006aaa148 SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter) 2 R1 1 2 3 1 R2 001aab447 3 006aaa148 SOT23, SOT323, SOT346, SOT416 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym003 SOT883 1 input (base) 2 GND (emitter) 3 output (collector) 1 3 3 2 R1 1 Transparent top view R2 2 sym003 PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 2 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTA123YE SC-75 plastic surface mounted package; 3 leads SOT416 PDTA123YK SC-59A plastic surface mounted package; 3 leads SOT346 PDTA123YM SC-101 leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 PDTA123YS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads PDTA123YT - plastic surface mounted package; 3 leads SOT23 PDTA123YU SC-70 plastic surface mounted package; 3 leads SOT323 [1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9) 4. Marking Table 5. Marking codes Type number Marking code[1] PDTA123YE 14 PDTA123YK 13 PDTA123YM G2 PDTA123YS TA123Y PDTA123YT *AD PDTA123YU *13 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 3 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −50 V VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −5 V VI input voltage positive - +5 V negative - −12 V IO output current (DC) - −100 mA ICM peak collector current - −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT416 [1] - 150 mW SOT346 [1] - 250 mW SOT883 [2][3] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW SOT323 [1] - 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line. 6. Thermal characteristics Table 7. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Typ Max Unit SOT416 [1] - - 833 K/W SOT346 [1] - - 500 K/W SOT883 [2][3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line. PDTA123Y_SER_4 Product data sheet Min © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 4 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −50 V; IE = 0 A - - −100 nA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A - - −1 µA VCE = −30 V; IB = 0 A; Tj = 150 °C - - −50 µA µA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −700 hFE DC current gain VCE = −5 V; IC = −5 mA 35 - - VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA - - −150 mV VI(off) off-state input voltage VCE = −5 V; IC = −100 µA - −0.75 −0.3 V VI(on) on-state input voltage VCE = −300 mV; IC = −20 mA −2.5 −1.15 - V R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ R2/R1 bias resistor ratio 3.6 4.5 5.5 Cc collector capacitance - - 2 VCB = −10 V; IE = ie = 0 A; f = 1 MHz PDTA123Y_SER_4 Product data sheet pF © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 5 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 006aaa103 103 006aaa104 −1 hFE (2) 102 VCEsat (V) (1) (3) −10−1 (1) (2) 10 (3) 1 −10−1 −1 −10 −102 −10−2 −1 −102 −10 I C (mA) I C (mA) VCE = −5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values 006aaa105 −10 Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa106 −10 VI(off) (V) VI(on) (V) (1) −1 −10−1 −10−1 −1 (1) −1 (2) (2) (3) (3) −10 −102 −10−1 −10−1 I C (mA) VCE = −0.3 V VCE = −5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values PDTA123Y_SER_4 Product data sheet −10 I C (mA) (1) Tamb = −40 °C Fig 3. −1 © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 6 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 8. Package outline Plastic surface-mounted package; 3 leads SOT416 D E B A X HE v M A 3 Q A 1 A1 2 e1 c bp w M B Lp e detail X 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 0.95 0.60 0.1 0.30 0.15 0.25 0.10 1.8 1.4 0.9 0.7 1 0.5 1.75 1.45 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT416 Fig 5. JEITA SC-75 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Package outline SOT416 (SC-75) PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 7 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Plastic surface-mounted package; 3 leads SOT346 E D A B X HE v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e e1 HE Lp Q v w mm 1.3 1.0 0.1 0.013 0.50 0.35 0.26 0.10 3.1 2.7 1.7 1.3 1.9 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 OUTLINE VERSION SOT346 Fig 6. REFERENCES IEC JEDEC JEITA TO-236 SC-59A EUROPEAN PROJECTION ISSUE DATE 04-11-11 06-03-16 Package outline SOT346 (SC-59A/TO-236) PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 8 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC SOT883 Fig 7. JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Package outline SOT883 (SC-101) PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 9 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Plastic single-ended leaded (through hole) package; 3 leads SOT54 c E d A L b 1 e1 2 D e 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 e 2.54 e1 L L1(1) 1.27 14.5 12.7 2.5 max. Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 Fig 8. REFERENCES IEC JEDEC JEITA TO-92 SC-43A EUROPEAN PROJECTION ISSUE DATE 04-06-28 04-11-16 Package outline SOT54 (SC-43A/TO-92) PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 10 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Plastic single-ended leaded (through hole) package; 3 leads (wide pitch) SOT54A c E A L d L2 b 1 e1 e D 2 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 5.08 2.54 14.5 12.7 3 max. L2 3 2 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA ISSUE DATE 97-05-13 04-06-28 SOT54A Fig 9. EUROPEAN PROJECTION Package outline SOT54A PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 11 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant c e1 L2 E d A L b 1 e1 2 e D 3 b1 L1 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b b1 c D d E e e1 L L1(1) max L2 max mm 5.2 5.0 0.48 0.40 0.66 0.55 0.45 0.38 4.8 4.4 1.7 1.4 4.2 3.6 2.54 1.27 14.5 12.7 2.5 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 04-06-28 05-01-10 SOT54 variant Fig 10. Package outline SOT54 variant PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 12 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 11. Package outline SOT23 (TO-236AB) PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 13 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ Plastic surface-mounted package; 3 leads SOT323 D E B A X HE y v M A 3 Q A A1 c 1 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 OUTLINE VERSION REFERENCES IEC JEDEC SOT323 JEITA SC-70 EUROPEAN PROJECTION ISSUE DATE 04-11-04 06-03-16 Fig 12. Package outline SOT323 (SC-70) PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 14 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number Package Description Packing quantity 3000 5000 10000 PDTA123YE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135 PDTA123YK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTA123YM SOT883 2 mm pitch, 8 mm tape and reel - - -315 PDTA123YS SOT54 bulk, straight leads - -412 - SOT54A tape and reel, wide pitch - - -116 tape ammopack, wide patch - - -126 SOT54 variant bulk, delta pinning - -112 - PDTA123YT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 PDTA123YU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135 [1] For further information and the availability of packing methods, see Section 12. PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 15 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 10. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTA123Y_SER_4 20090903 Product data sheet - PDTA123Y_SER_3 Modifications: • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content • • • • Figure 5 “Package outline SOT416 (SC-75)”: updated Figure 6 “Package outline SOT346 (SC-59A/TO-236)”: updated Figure 11 “Package outline SOT23 (TO-236AB)”: updated Figure 12 “Package outline SOT323 (SC-70)”: updated PDTA123Y_SER_3 20050405 Product data sheet - PDTA123YT_2 PDTA123YT_2 20040611 Objective data sheet - PDTA123YT_1 PDTA123YT_1 20040325 Objective data sheet - - PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 16 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 11. Legal information 11.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 11.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 11.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 11.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 12. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PDTA123Y_SER_4 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 04 — 3 September 2009 17 of 18 PDTA123Y series NXP Semiconductors PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ 13. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 Legal information. . . . . . . . . . . . . . . . . . . . . . . 17 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Contact information. . . . . . . . . . . . . . . . . . . . . 17 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 September 2009 Document identifier: PDTA123Y_SER_4