HCS154MS Radiation Hardened 4-to-16 Line Decoder/Demultiplexer September1995 Features Pinouts 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T24 TOP VIEW • 3 Micron Radiation Hardened SOS CMOS • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 Rads (Si)/s • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse Y0 1 24 VCC Y1 2 23 A0 Y2 3 22 A1 Y3 4 21 A2 20 A3 Y4 5 • Cosmic Ray Upset Immunity < 2 x 10-9 Errors/Gate Day (Typ) Y5 6 19 E2 Y6 7 18 E1 • Latch-Up Free Under Any Conditions Y7 8 17 Y15 • Military Temperature Range: -55oC to +125oC Y8 9 16 Y14 Y9 10 15 Y13 Y10 11 14 Y12 GND 12 13 Y11 • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min • Input Current Levels Ii ≤ 5µA at VOL, VOH 24 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F24 TOP VIEW Description The Intersil HCS154MS is a Radiation Hardened 4 to 16 line Decoder/Demultiplexer with two enable inputs. A high on either enable input forces the output to a high state. The Demultiplexing function is performed by using the four input lines A0 to A3 to select the desired output states. Y0 1 Y1 2 Y2 3 Y3 4 The HCS154MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. Y4 Y5 Y6 5 Y7 8 The HCS154MS is supplied in a 24 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Y8 Y9 9 Y10 ND 11 24 23 22 21 20 19 18 17 16 15 14 13 6 7 10 12 VCC A0 A1 A2 A3 E2 E1 Y15 Y14 Y13 Y12 Y11 Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCS154DMSR -55oC to +125oC Intersil Class S Equivalent 24 Lead SBDIP HCS154KMSR -55oC to +125oC Intersil Class S Equivalent 24 Lead Ceramic Flatpack +25oC Sample 24 Lead SBDIP HCS154K/Sample +25oC Sample 24 Lead Ceramic Flatpack HCS154HMSR +25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 DB NA HCS154D/Sample Spec Number File Number 518754 2479.2 HCS154MS Functional Diagram TRUTH TABLE INPUTS OUTPUTS E1 E2 A0 A1 A2 A3 Y0 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 Y15 L L L L L L L H H H H H H H H H H H H H H H L L L L L H H L H H H H H H H H H H H H H H L L L L H L H H L H H H H H H H H H H H H H L L L L H H H H H L H H H H H H H H H H H H L L L H L L H H H H L H H H H H H H H H H H L L L H L H H H H H H L H H H H H H H H H H L L L H H L H H H H H H L H H H H H H H H H L L L H H H H H H H H H H L H H H H H H H H L L H L L L H H H H H H H H L H H H H H H H L L H L L H H H H H H H H H H L H H H H H H L L H L H L H H H H H H H H H H L H H H H H L L H L H H H H H H H H H H H H H L H H H H L L H H L L H H H H H H H H H H H H L H H H L L H H L H H H H H H H H H H H H H H L H H L L H H H L H H H H H H H H H H H H H H L H L L H H H H H H H H H H H H H H H H H H H L L H X X X X H H H H H H H H H H H H H H H H H L X X X X H H H H H H H H H H H H H H H H H H X X X X H H H H H H H H H H H H H H H H H = High Level, L = Low Level, X = Immaterial Spec Number 2 518754 Specifications HCS154MS Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 63oC/W 23oC/W Ceramic Flatpack Package . . . . . . . . . . . 87oC/W 23oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.79W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.57W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . 11.5mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . .100ns Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . 70% of VCC to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 µA 1 +25oC 4.8 - mA 2, 3 +125oC, -55oC 4.0 - mA 1 +25oC -4.8 - mA 2, 3 +125oC, -55oC -4.0 - mA VCC = 4.5V, VIH = 3.15V, IOL = 50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 3.15V, IOH = -50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 0.70(VCC), (Note 2) VIL = 0.30(VCC) LIMITS NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 3 518754 Specifications HCS154MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Address to Output (NOTES 1, 2) CONDITIONS SYMBOL TPLH TEMPERATURE MIN MAX UNITS 9 +25oC 2 29 ns 10, 11 +125oC, -55oC 2 34 ns 9 +25oC 2 27 ns 10, 11 +125oC, -55oC 2 31 ns 9 +25oC 2 27 ns 10, 11 +125oC, -55oC 2 27 ns VCC = 4.5V TPHL Enable to Output GROUP A SUBGROUPS VCC = 4.5V TPLH TPHL VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance Output Transition Time CIN TTHL TTLH CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 +25oC - 66 pF 1 +125oC, -55oC - 74 pF 1 +25oC - 10 pF 1 +125oC - 10 pF 1 +25oC - 15 ns 1 +125oC - 22 ns VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS PARAMETERS SYMBOL (NOTES 1, 2) CONDITIONS TEMPERATURE MIN MAX UNITS Quiescent Current ICC VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -4.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOL = 50µA +25oC - 0.1 V Spec Number 4 518754 Specifications HCS154MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS PARAMETERS (NOTES 1, 2) CONDITIONS SYMBOL Output Voltage High VOH TEMPERATURE MIN MAX UNITS VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), IOH = -50µA +25oC VCC -0.1 - V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA Noise Immunity Functional Test FN VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 3) +25oC - - - TPLH VCC = 4.5V +25oC 2 34 ns TPHL VCC = 4.5V +25oC 2 31 ns TPLH TPHL VCC = 4.5V +25oC 2 27 ns Address to Output Enable to Output NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 12µA IOL/IOH 5 -15% of 0 Hour PARAMETER TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD ICC, IOL/H Subgroups 1, 2, 3, 9, 10, 11 NOTE: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. Spec Number 5 518754 Specifications HCS154MS TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 24 - - - 18 - 24 - - 1 - 11, 13 - 17 24 23 22 STATIC BURN-IN I TEST CONDITIONS (Note 1) 1 - 11, 13 - 17 12, 18 - 23 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 1 - 11, 13 - 17 12 DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2) - 12, 18 - 21 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1KΩ ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 1 - 11, 13 - 17 12 18 - 24 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 6 518754 HCS154MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% External Visual, Method 2009 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 7 518754 HCS154MS AC Timing Diagrams AC Load Circuit DUT TEST POINT VIH INPUT VS CL VIL RL TPLH TPHL VOH CL = 50pF VS OUTPUT RL = 500Ω VOL VOH TTLH TTHL 80% VOL 20% 80% 20% OUTPUT AC VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VIL 0 V GND 0 V All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 8 518754 HCS154MS Die Characteristics DIE DIMENSIONS: 85 x 101 mils 2.16 x 2.57mm METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: 2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCS154MS Y1 (2) Y0 (1) VCC (24) A0 (23) A1 (22) Y2 (3) Y3 (4) (21) A2 Y4 (5) (20) A3 (19) E2 Y5 (6) Y6 (7) (18) E1 Y7 (8) (17) Y15 Y8 (9) (16) Y14 Y9 (10) (11) Y10 (12) GND (13) Y11 (14) Y12 (15) Y13 Spec Number 9 518754