BL M34A581xx

LED DOT MATRIX
BL-M34X581XX
Features:
Ø
87.63mm (3.4”) ¦µ7.62 dot matrix LED display, BI-COLOR
Ø
Low current operation.
Ø
Excellent character appearance.
Ø
Easy mounting on P.C. Boards or sockets.
Ø
I.C. Compatible.
Ø
ROHS Compliance.
Electrical-optical characteristics: (Ta=25 Ｃ)
(Test Condition: IF=20mA)
Part No
Row Cathode
Column Anode
BL-M34A581SG-XX
BL-M34A581EG-XX
BL-M34A581DUG-XX
Row Anode
Column Cathode
BL-M34B581SG-XX
Emitted Color
BL-M34B581DUG-XX
Iv
Material
？７
P
(nm)
Typ
Max
TYP.(mcd)
AlGaInP
660
2.10
2.50
140
Green
GaP/GaP
570
2.20
2.50
125
Orange
GaAsP/Ga
P
635
2.10
2.50
110
Green
GaP/GaP
570
2.20
2.50
125
Ultra Red
AlGaInP
660
2.10
2.50
160
Ultra Green
AlGaInP
574
2.20
2.50
190
AlGaInP
630
2.10
2.50
150
AlGaInP
574
2.20
2.50
190
Super Red
BL-M34B581EG-XX
BL-M34A581UEUG-X
BL-M34B581UEUG-X
Ultra Orange
X
X
Ultra Green
-XX: Surface / Lens color：
0
Number
Ref Surface Color
White
Epoxy Color
Water
clear
VF
Unit:V
Chip
1
2
3
4
5
Black
White
diffused
Gray
Red
Diffused
Red
Green
Diffused
Green
Yellow
Diffused
Absolute maximum ratings (Ta=25°C)
S
G
E
Forward Current IF
Power Dissipation Pd
Reverse Voltage VR
Peak Forward Current IPF
(Duty 1/10 @1KHZ)
Operation Temperature T OPR
Storage Temperature T STG
30
75
5
30
80
5
30
80
5
30
75
5
30
75
5
30
65
5
mW
150
150
150
150
150
150
mA
Lead Soldering Temperature
T SOL
D
UG
UE
U
nit
Parameter
-40 to +80
-40 to +85
Ma x.260±5 Ｃfor 3 sec Max.
(1.6mm from the base of the epoxy bulb)
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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mA
V
Ｃ
Ｃ
Ｃ
LED DOT MATRIX
BL-M34X581XX
Package configuration & Internal circuit diagram
Notes:
1. All dimensions are in millimeters (inches)
2. Tolerance is ±0.25(0.01")unless otherwise noted.
3. Specifications are subject to change without notice.
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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LED DOT MATRIX
BL-M34X581XX
Typical electrical-optical characteristics curves:
(A)
1.0
(B )
(C)
( D)
(2)
(3)
(8)
( 4)
(1) (6)
( 5)
(9)
(10)
0.5
0
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
Wav elength(nm)
RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p )
(1) - GaAsP/GaAs 655nm/Red
(9) - GaAlAs 880nm
(2) - GaP 570nm/Yellow Green
(3) - GaAsP/GaP 585nm/Yellow
(10) - GaAs/GaAs & GaAlAs/GaAs 940nm
(A) - GaN/SiC 430nm/Blue
(4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red
(5) - GaP 700nm/Bright Red
(B) - InGaN/SiC 470nm/Blue
(C) - InGaN/SiC 505nm/Ultra Green
(6) - GaAlAs/GaAs 660nm/Super Red
(D) - InGaAl/SiC 525nm/Ultra Green
(8) - GaAsP/GaP 610nm/Super Red
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
8
64 5
1
50
2 3
R
E
L
A
T
IV
E
L
U
M
IN
O
U
S
IN
T
E
N
S
IT
Y
40
30
20
10
0
1.2
1.6
2.0
2.4
2.6
3.0
4.0
F
O
R
W
A
R
D
C
U
R
R
E
N
T
(m
A
)
3.0
2.0
5
B
1.0
0
20
FORWARD VOLTAGE (Vf)
FORWARD CURRENT VS.
FORWARD VOLTAGE
R
E
L
A
T
IV 3
1
E 2
5
4
L
2
U
M 1 3
IN
O
U 0.5
S
IN
T
E
N
S 0.2
IT
Y
0.1
-30 -20
50
1
40
60
80
40
30
20
1
6
2,4,8,A
3
5
10
0
100
20
3KHz
300KHz
1KHz
100KHz F-REFRESH R ATE
10 10KH z
9
8
7
6
5
ID
C
M
A
X
.
Ip
e 4
a
k
M
A 3
X
.
2
-10
0
10
20
30
40
50
60
80
100
Ip
e
a
k
M
A
X
.
30KHz
3 KHz
300Hz
100KHz
10KHz 1KHz
100H z
10
9
8
7
6
5
4
3
2
70
1
AMBIENT TEM PER ATUR E Ta(℃ )
60
AMBIENT TEMPERATURE Ta( ℃)
FORWARD CURRENT VS. AMBIENT
TEMPERATURE
FORWARD CURRENT (mA)
RELATIVE LUMI NOUS
INTENSI TY VS. FORWARD
CURRENT
ID
C
M
A
X
.
40
1
10
100
1000
tp-PU LSE DU RATION uS
(1,2 ,3 ,4,6,8,B.D.J. K)
10,000
1
1
10
100
1000
tp-P ULSE DU RATION uS
(5)
NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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10,000
LED DOT MATRIX
BL-M34X581XX
Packing and weighting
54g/pcs
Maximum
8pcs/bag
Maximum
5
Bag/Inner Box
3 Inner Box /Box
9 Inner Box /Box
APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS
REV NO: V.2
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