LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only FOUR DIGIT LED DISPLAY (0.56 Inch) LFD5E5/62V-XX DATA SHEET DOC. NO : QW0905- LFD5E5/62V-XX REV. : B DATE : 26 - Dec. - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/7 PART NO. LFD5E5/62V-XX Package Dimensions 50.4(1.984") DIG.1 DIG.2 DIG.3 8.0(0.315") DIG.4 19.0 (0.748") 14.2 (0.56") 15.24 (0.6") ψ1.5(0.059") LFD5E5/62V-XX LIGITEK A F G E 4.3 ±0.5 Ø 0.51 D TYP 2.54X5=12.7 (0.5") PIN NO.1 Note : 1.All dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice. B C DP LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 2/7 PART NO. LFD5E5/62V-XX Internal Circuit Diagram LFD5E52V-XX 11 7 4 2 1 10 5 3 A B C D E F G DP A B C D E F G DP A B C D E F G DP A B C D E F G DP LFD5E62V-XX DIG. 1 12 DIG. 2 9 DIG. 3 8 DIG. 4 6 11 7 4 2 1 10 5 3 A B C D E F G DP A B C D E F G DP A B C D E F G DP A B C D E F G DP DIG. 1 12 DIG. 2 9 DIG. 3 8 DIG. 4 6 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/7 PART NO. LFD5E5/62V-XX Electrical Connection PIN NO.1 LFD5E52V-XX PIN NO.1 LFD5E62V-XX 1 Anode E 1 Cathode E 2 Anode D 2 Cathode D 3 Anode DP 3 Cathode DP 4 Anode C 4 Cathode C 5 Anode G 5 Cathode G 6 Common Cathode Dig.4 6 Common Anode Dig.4 7 Anode B 7 Cathode B 8 Common Cathode Dig.3 8 Common Anode Dig.3 9 Common Cathode Dig.2 9 Common Anode Dig.2 10 Anode F 10 Cathode F 11 Anode A 11 Cathode A 12 Common Cathode Dig.1 12 Common Anode Dig.1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 4/7 PART NO. LFD5E5/62V-XX Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT VG Forward Current Per Chip IF 30 mA Peak Forward Current Per Chip (Duty 1/10,0.1ms Pulse Width) IFP 120 mA Power Dissipation Per Chip PD 100 mW Ir 10 μA Operating Temperature Topr -25 ~ +85 ℃ Storage Temperature Tstg -25 ~ +85 ℃ Reverse Current Per Any Chip Solder Temperature 1/16 Inch Below Seating Plane For 3 Seconds At 260 ℃ Part Selection And Application Information(Ratings at 25℃) common cathode Emitted or anode CHIP PART NO Material △λ (nm) (nm) Vf(v) Iv(mcd) Min. Max. Min. Typ. 1.7 2.35 IV-M Common Cathode LFD5E52V-XX GaP LFD5E62V-XX Electrical λP 565 Green 30 Common Anode Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. 2.6 1.35 2:1 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 5/7 PART NO. LFD5E5/62V-XX Test Condition For Each Parameter Symbol Unit Test Condition Forward Voltage Per Chip Vf volt If=20mA Luminous Intensity Per Chip Iv mcd If=10mA Peak Wavelength λP nm If=20mA △λ nm If=20mA Ir μA Vr=5V Parameter Spectral Line Half-Width Reverse Current Any Chip Luminous Intensity Matching Ratio IV-M LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD5E5/62V-XX Page 6/7 Typical Electro-Optical Characteristics Curve VG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 1.0 2.0 3.0 4.0 1.0 5.0 10 Fig.4 Relative Intensity vs. Temperature 1.2 Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature 1.1 1.0 0.9 0.8 -20 0 20 40 60 80 100 Relative Intensity@20mA Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) 500 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LFD5E5/62V-XX Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=10mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃± 5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃± 5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65℃± 5℃ 2.RH=90%~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃&-40 ℃±5℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11