LED DOT MATRIX BL-M12X571XX Features: Ø 39.10mm (1.2”) ¦µ3.0 dot matrix LED display. BI-COLOR Ø Low current operation. Ø Excellent character appearance. Ø Easy mounting on P.C. Boards or sockets. Ø I.C. Compatible. Ø ROHS Compliance. Electrical-optical characteristics: (Ta=25 Ｃ) (Test Condition: IF=20mA) Part No Row Cathode Column Anode BL-M12E571SG-XX BL-M12E571EG-XX BL-M12E571DUG-XX Row Anode Column Cathode BL-M12F571SG-XX Emitted Color BL-M12F571DUG-XX Iv Material ？７ P (nm) Typ Max TYP.(mcd) AlGaInP 660 2.10 2.50 100 Green GaP/GaP 570 2.20 2.50 95 Orange GaAsP/Ga P 635 2.10 2.50 90 Green GaP/GaP 570 2.20 2.50 95 Ultra Red AlGaInP 660 2.10 2.50 110 Ultra Green AlGaInP 574 2.20 2.50 130 AlGaInP 630 2.10 2.50 100 AlGaInP 574 2.20 2.50 130 Super Red BL-M12F571EG-XX BL-M12E571UEUG-X BL-M12F571UEUG-X Ultra Orange X X Ultra Green -XX: Surface / Lens color： 0 Number Ref Surface Color White Epoxy Color Water clear VF Unit:V Chip 1 2 3 4 5 Black White diffused Gray Red Diffused Red Green Diffused Green Yellow Diffused Absolute maximum ratings (Ta=25°C) S G E Forward Current IF Power Dissipation Pd Reverse Voltage VR Peak Forward Current IPF (Duty 1/10 @1KHZ) Operation Temperature T OPR Storage Temperature T STG 30 75 5 30 80 5 30 80 5 30 75 5 30 75 5 30 65 5 mW 150 150 150 150 150 150 mA Lead Soldering Temperature T SOL D UG UE U nit Parameter -40 to +80 -40 to +85 Ma x.260±5 Ｃfor 3 sec Max. (1.6mm from the base of the epoxy bulb) APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 1 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] mA V Ｃ Ｃ Ｃ LED DOT MATRIX BL-M12X571XX Package configuration & Internal circuit diagram Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is ±0.25(0.01")unless otherwise noted. 3. Specifications are subject to change without notice. APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 2 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] LED DOT MATRIX BL-M12X571XX Typical electrical-optical characteristics curves: (A) 1.0 (B ) (C) ( D) (2) (3) (8) ( 4) (1) (6) ( 5) (9) (10) 0.5 0 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 Wav elength(nm) RELATIV E INTENS ITY Vs WA VELE NGT H(¦Ë p ) (1) - GaAsP/GaAs 655nm/Red (9) - GaAlAs 880nm (2) - GaP 570nm/Yellow Green (3) - GaAsP/GaP 585nm/Yellow (10) - GaAs/GaAs & GaAlAs/GaAs 940nm (A) - GaN/SiC 430nm/Blue (4) - GaAsp/GaP 635nm/Orange & Hi-Eff Red (5) - GaP 700nm/Bright Red (B) - InGaN/SiC 470nm/Blue (C) - InGaN/SiC 505nm/Ultra Green (6) - GaAlAs/GaAs 660nm/Super Red (D) - InGaAl/SiC 525nm/Ultra Green (8) - GaAsP/GaP 610nm/Super Red F O R W A R D C U R R E N T (m A ) 8 64 5 1 50 2 3 R E L A T IV E L U M IN O U S IN T E N S IT Y 40 30 20 10 0 1.2 1.6 2.0 2.4 2.6 3.0 4.0 F O R W A R D C U R R E N T (m A ) 3.0 2.0 5 B 1.0 0 20 FORWARD VOLTAGE (Vf) FORWARD CURRENT VS. FORWARD VOLTAGE R E L A T IV 3 1 E 2 5 4 L 2 U M 1 3 IN O U 0.5 S IN T E N S 0.2 IT Y 0.1 -30 -20 50 1 40 60 80 40 30 20 1 6 2,4,8,A 3 5 10 0 100 20 3KHz 300KHz 1KHz 100KHz F-REFRESH R ATE 10 10KH z 9 8 7 6 5 ID C M A X . Ip e 4 a k M A 3 X . 2 -10 0 10 20 30 40 50 60 80 100 Ip e a k M A X . 30KHz 3 KHz 300Hz 100KHz 10KHz 1KHz 100H z 10 9 8 7 6 5 4 3 2 70 1 AMBIENT TEM PER ATUR E Ta(℃ ) 60 AMBIENT TEMPERATURE Ta( ℃) FORWARD CURRENT VS. AMBIENT TEMPERATURE FORWARD CURRENT (mA) RELATIVE LUMI NOUS INTENSI TY VS. FORWARD CURRENT ID C M A X . 40 1 10 100 1000 tp-PU LSE DU RATION uS (1,2 ,3 ,4,6,8,B.D.J. K) 10,000 1 1 10 100 1000 tp-P ULSE DU RATION uS (5) NOTE:25℃ free air temperat ure unless otherw ise sp ecifie d APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 3 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected] 10,000 LED DOT MATRIX BL-M12X571XX Packing and weighting 6.3g/pcs Maximum 64pcs/bag Maximum 5 Bag/Inner Box 3 Inner Box /Box 9 Inner Box /Box APPROVED : XU L CHECKED :ZHANG WH DRAWN: LI FS REV NO: V.2 Page 4 of 4 WWW.BETLUX.COM EMAIL: [email protected] , [email protected]