HCS02MS Radiation Hardened Quad 2-Input NOR Gate August 1995 Features Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD(Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) • Dose Rate Survivability: >1 x 1012 Rads (Si)/s • Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse • Latch-Up Free Under Any Conditions • Military Temperature Range: -55oC to +125oC • Significant Power Reduction Compared to LSTTL ICs Y1 1 14 VCC A1 2 13 Y4 B1 3 12 B4 Y2 4 11 A4 A2 5 10 Y3 B2 6 9 B3 GND 7 8 A3 • DC Operating Voltage Range: 4.5V to 5.5V 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW • Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min • Input Current Levels Ii ≤ 5µA at VOL, VOH Y1 Description The Intersil HCS02MS is a Radiation Hardened Quad 2-Input NOR Gate. A low on both inputs forces the output to a High state. The HCS02MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. 1 14 VCC A1 2 13 Y4 B1 3 12 B4 Y2 4 11 A4 A2 5 10 Y3 B2 6 9 B3 GND 7 8 A3 The HCS02MS is supplied in a 14 lead Ceramic Flatpack Package (K suffix) or a 14 lead SBDIP Package (D suffix). TRUTH TABLE INPUTS Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL HCS02DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP Intersil Class S Equivalent 14 Lead Ceramic Flatpack Sample 14 Lead SBDIP HCS02KMSR HCS02D/ Sample -55oC to +125oC +25oC PACKAGE OUTPUTS An Bn Yn L L H L H L H L L H H L NOTE: L = Logic Level Low, H = Logic level High Functional Diagram An HCS02K/ Sample +25oC HCS02HMSR +25oC (2, 5, 8, 11) Sample 14 Lead Ceramic Flatpack Yn (1, 4, 10, 13) Die Die Bn CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 DB NA (3, 6, 9, 12) Spec Number File Number 518744 2433.2 Specifications HCS02MS Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.. Operating Conditions Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . .0.0V to 30% of VCC Max. Input High Voltage (VIH) . . . . . . . . . . . . . . 70% of VCC to VCC Min. TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 10 µA 2, 3 +125oC, -55oC - 200 µA 1 +25oC 4.8 - mA 2, 3 +125oC, -55oC 4.0 - mA 1 +25oC -4.8 - mA 2, 3 +125oC, -55oC -4.0 - mA VCC = 4.5V, VIH = 3.15V, IOL = 50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 3.85V, IOL = 50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 3.15V, IOH = -50µA, VIL = 1.35V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 3.85V, IOH = -50µA, VIL = 1.65V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) (Note 2) LIMITS NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 2 518744 Specifications HCS02MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Input to Yn Input to Yn (NOTES 1, 2) CONDITIONS SYMBOL TPHL GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 18 ns 10, 11 +125oC, -55oC 2 20 ns 9 +25oC 2 20 ns 10, 11 +125oC, -55oC 2 22 ns VCC = 4.5V TPLH VCC = 4.5V LIMITS NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance CIN Output Transition Time TTHL TTLH CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 +25oC - 18 pF 1 +125oC, -55oC - 26 pF 1 +25oC - 10 pF 1 +125oC - 10 pF 1 +25oC - 15 ns 1 +125oC - 22 ns VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETERS Quiescent Current Output Current (Sink) (NOTES 1, 2) CONDITIONS SYMBOL ICC IOL 200K RAD LIMITS TEMPERATURE MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - 0.2 mA VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC 4.0 - mA -4.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC Output Voltage Low VOL VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, IOL = 50µA +25oC - 0.1 V Output Voltage High VOH VCC = 4.5V or 5.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, IOH = -50µA +25oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA VCC = 4.5V, VIH = 0.70(VCC), VIL = 0.30(VCC) at 200K RAD, (Note 3) +25oC - - - VCC = 4.5V +25oC 2 20 ns VCC = 4.5V +25oC 2 22 ns Input Leakage Current Noise Immunity Functional Test Input to Yn IIN FN TPHL TPLH NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 3 518744 Specifications HCS02MS TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 3µA IOL/IOH 5 -15% of 0 Hour PARAMETER TABLE 6. APPLICABLE SUBGROUPS GROUP A SUBGROUPS COMFORMANCE GROUP MIL-STD-883 METHOD TESTED RECORDED Initial Test 100% 5004 1, 7, 9 1 (Note 2) Interim Test 100% 5004 1, 7, 9, ∆ 1, ∆ (Note 2) PDA 100% 5004 1, 7, ∆ Final Test 100% 5004 2, 3, 8A, 8B, 10, 11 Group A (Note 1) Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, ∆ Subgroup B6 Sample 5005 1, 7, 9 Group D Sample 5005 1, 7, 9 1, 2, 3, ∆ (Note 2) NOTES: 1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised. 2. Table 5 parameters only. TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. Spec Number 4 518744 Specifications HCS02MS TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 14 - - - 2, 3, 5, 6, 8, 9, 11, 12, 14 - - 1, 4, 10, 13 14 2, 3, 5, 6, 8, 9, 11, 12 - STATIC BURN-IN I TEST CONDITIONS (Note 1) 1, 4, 10, 13 2, 3, 5, 6, 7, 8, 9, 11, 12 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 1, 4, 10, 13 7 DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2) - 7 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% static burn-in. 2. Each Pin except VCC and GND will have a resistor of 1kΩ ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 1, 4, 10, 13 7 2, 3, 5, 6, 8, 9, 11, 12, 14 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 5 518744 HCS02MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% External Visual, Method 2009 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 6 518744 HCS02MS AC Timing Diagrams AC Load Circuit DUT TEST POINT VIH INPUT VS CL RL VIL TPLH TPHL VOH CL = 50pF VS RL = 500Ω OUTPUT VOL VOH FIGURE 2 TTLH TTHL 80% VOL 20% 80% 20% OUTPUT FIGURE 1 AC VOLTAGE LEVELS PARAMETER HCS UNITS VCC 4.50 V VIH 4.50 V VS 2.25 V VIL 0 V GND 0 V Spec Number 7 518744 HCS02MS Die Characteristics DIE DIMENSIONS: 87 x 88 mils 2.20mm x 2.24mm METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 x 4 mils Metallization Mask Layout HCS02MS Y1 (1) VCC (14) Y4 (13) A1 (2) (12) B4 (11) A4 B1 (3) (10) Y3 Y2 (4) A2 (5) (9) B3 (6) B2 (7) GND (8) A3 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 8 518744