NCV2393, TS393 Micropower Dual CMOS Voltage Comparator The NCV2393 and TS393 are micropower CMOS dual voltage comparators. They feature extremely low consumption of 6 mA typical per comparator and operate over a wide temperature range of TA = −40 to 125°C. The NCV2393 and TS393 are available in an SOIC−8 package. http://onsemi.com MARKING DIAGRAM Features • • • • • • • • • Extremely Low Supply Current: 6 mA Typical Per Channel Wide Supply Range: 2.7 to 16 V Extremely Low Input Bias Current: 1 pA Typical Extremely Low Input Offset Current: 1 pA Typical Input Common Mode Range Includes VSS High Input Impedance: 1012 W Pin−to−Pin Compatibility with Dual Bipolar LM393 NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 8 NCV2393 ALYW G SOIC−8 CASE 751 8 1 1 A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS OUT 1 1 8 VDD IN− 1 2 7 OUT 2 IN+ 1 3 6 IN− 2 VSS 4 5 IN+ 2 ORDERING INFORMATION Package Shipping† NCV2393DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel TS393DR2G SOIC−8 (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 3 1 Publication Order Number: NCV2393/D NCV2393, TS393 PIN DESCRIPTION Pin Name Type 1 OUT 1 Output Description 2 IN− 1 Input Inverting input of comparator 1 3 IN+ 1 Input Non−inverting input of comparator 1 4 VSS Power 5 IN+ 2 Input Non−inverting input of comparator 2 Inverting input of comparator 2 Output of comparator 1. The open−drain output requires an external pull−up resistor. Negative supply 6 IN− 2 Input 7 OUT 2 Output Output of comparator 2. The open−drain output requires an external pull−up resistor. 8 VDD Power Positive supply ABSOLUTE MAXIMUM RATINGS (Note 1) Over operating free−air temperature, unless otherwise stated Parameter Limit Unit 18 V Input Voltage (Note 2) 18 V Input Differential Voltage, VID (Note 3) ±18 V Input Current (through ESD protection diodes) 50 mA Output Voltage 18 V Output Current 20 mA Storage Temperature −65 to +150 °C Junction Temperature 150 °C 1500 V 50 V 100 mA Supply Voltage, VS (VDD−VSS) INPUT AND OUTPUT PINS TEMPERATURE ESD RATINGS Human Body Model Machine Model LATCH−UP RATINGS Latch−up Current Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Stresses beyond the absolute maximum ratings can lead to reduced reliability and damage. 2. Excursions of input voltages may exceed the power supply level. As long as the common mode voltage [VCM = (VIN+ + VIN−)/2] remains within the specified range, the comparator will provide a stable output state. However, the maximum current through the ESD diodes of the input stage must strictly be observed. 3. Input differential voltage is the non−inverting input terminal with respect to the inverting input terminal. To prevent damage to the gates, each comparator includes back−to−back zener didoes between input terminals. When differential voltage exceeds 6.2 V, the diodes turn on. Input resistors of 1 kW have been integrated to limit the current in this event. 4. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115) Latch−up Current tested per JEDEC standard: JESD78. THERMAL INFORMATION (Note 5) Thermal Metric Symbol Value Unit Junction−to−Ambient (Note 6) qJA 190 °C/W Junction−to−Case Top YJT 107 °C/W 5. Short−circuits can cause excessive heating and destructive dissipation. Values are typical. 6. Multilayer board, 1 oz. copper, 400 mm2 copper area, both junctions heated equally http://onsemi.com 2 NCV2393, TS393 OPERATING CONDITIONS Symbol Limit Unit Supply Voltage (VDD − VSS) Parameter VS +2.7 to +16 V Operating Free Air Temperature Range TA −40 to +125 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS: VS = +3 V (Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.) Parameter Symbol Conditions Min VOS VCM = mid−supply IIB VCM = mid−supply Typ Max Unit INPUT CHARACTERISTICS Offset Voltage Input Bias Current (Note 7) 1.4 mV 1 pA 600 1 Input Offset Current (Note 7) Input Common Mode Range Common Mode Rejection Ratio IOS VCM = mid−supply VCM = VSS to VCM = VDD − 1.5 V pA 300 pA VSS VDD – 1.5 V VSS VDD − 2 V VCM CMRR pA 70 dB OUTPUT CHARACTERISTICS VSS + 300 Output Voltage Low VOL VID = −1 V, IOL = +6 mA Output Current High IOH VID = +1 V, VOH = +3 V 2 VSS + 450 mV VSS + 700 mV 40 nA 1000 nA DYNAMIC PERFORMANCE Propagation Delay Low to High VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 5 mV overdrive 2.1 ms tPLH TTL input 0.6 ms Propagation Delay High to Low VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 5 mV overdrive 3.9 ms tPHL TTL input 0.2 ms 70 dB POWER SUPPLY Power Supply Rejection Ratio PSRR VS = +3 V to +5 V IDD Per channel, no load, output = LOW 6 Quiescent Current 15 mA 20 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 7. Guaranteed by characterization and/or design. http://onsemi.com 3 NCV2393, TS393 ELECTRICAL CHARACTERISTICS: VS = +5 V, unless otherwise noted (Boldface limits apply over the specified temperature range, TA = –40°C to +125°C.) Symbol Conditions VOS VCM = mid−supply V, VS = 5 V to 10 V Input Bias Current (Note 8) IIB VCM = mid−supply Input Offset Current (Note 8) IOS VCM = mid−supply Parameter Min Typ Max Unit INPUT CHARACTERISTICS Offset Voltage Input Common Mode Range Common Mode Rejection Ratio 1.4 mV 1 pA 600 pA 300 pA VSS VDD – 1.5 V VSS VDD − 2 V 1 VCM CMRR VCM = VSS to VCM = VDD − 1.5 V pA 71 dB OUTPUT CHARACTERISTICS VSS + 260 Output Voltage Low VOL VID = −1 V, IOL = +6 mA Output Current High IOH VID = +1 V, VOH = +5 V tFALL 50 mV overdrive, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 2 VSS + 350 mV VSS + 550 mV 40 nA 1000 nA DYNAMIC PERFORMANCE Fall Time Propagation Delay Low to High Propagation Delay High to Low tPLH tPHL VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF VCM = mid−supply, f = 10 kHz, RPU = 5.1 kW, CL = 50 pF 25 ns 5 mV overdrive 2.1 ms 10 mV overdrive 1.2 ms 20 mV overdrive 0.8 ms 40 mV overdrive 0.5 ms TTL input 0.6 ms 5 mV overdrive 5.8 ms 10 mV overdrive 3.2 ms 20 mV overdrive 1.7 ms 40 mV overdrive 1.0 ms TTL input 0.3 ms 80 dB POWER SUPPLY Power Supply Rejection Ratio PSRR VS = +5 V to = +10 V IDD Per channel, no load, output = LOW 6 Quiescent Current 15 mA 20 mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 8. Guaranteed by characterization and/or design http://onsemi.com 4 NCV2393, TS393 CURRENT (pA) VS = 5 V VCM = mid−rail IIB+ IIB− IOS 500 VOL, LOW LEVEL OUTPUT VOLTAGE (V) 600 400 300 200 100 0 25 45 85 65 TEMPERATURE (°C) 105 1.25 VS = 3 V VS = 4 V VS = 5 V VS = 10 V VS = 16 V 1 0.75 0.5 0.25 0 0 125 4 8 12 16 IOL, LOW−LEVEL OUTPUT CURRENT (mA) 450 400 Figure 2. VOL vs. IOL 25 VS = 5 V IOL = 6 mA IDD, SUPPLY CURRENT (mA) VOL, LOW LEVEL OUTPUT VOLTAGE (mV) Figure 1. IIB and IOS vs. Temperature 350 300 250 150 100 50 0 −55 20 15 5 Output Low No Loads Total IDD of both channels 0 125 2 4 6 8 10 12 VS, SUPPLY VOLTAGE (V) 900 Outputs High PROPAGATION DELAY (nS) IDD, SUPPLY CURRENT (mA) 18 14 12 Outputs Low 8 6 4 2 0 −55 VS = 5 V No Loads Total IDD of Both Channels −40 25 70 85 14 16 Figure 4. IDD vs. VS Figure 3. VOL vs. Temperature 10 TA = −55°C TA = −40°C TA = 25°C TA = 70°C TA = 85°C TA = 125°C 10 0 −40 25 70 85 TA, FREE−AIR TEMPERATURE (°C) 16 20 800 700 600 tPLH 500 400 300 3 125 tPHL Overdrive = 50 mV RP = 5.1 kW CL = 50 pF TA = 25°C 6 9 12 15 18 21 24 27 30 VOH, HIGH LEVEL OUTPUT VOLTAGE (V) VS, SUPPLY VOLTAGE (V) Figure 5. IDD vs. Temperature Figure 6. Propagation Delay vs. VS http://onsemi.com 5 33 36 NCV2393, TS393 5 VS = 5 V 0.35 RP = 5.1 kW CL = 50 pF 0.3 T = 25°C A 0.25 4 OUTPUT 2 40 mV 0.1 1 2 mV 0.2 0.15 3 0 5 mV 20 mV −1 10 mV −2 −3 0.05 −4 0 OUTPUT AMPLITUDE (V) INPUT AMPLITUDE (V) 0.4 −5 −0.05 INPUT 0 −1 1 2 3 4 5 −6 PROPAGATION DELAY (ms) Figure 7. tPLH vs. Overdrive OUTPUT 0.3 0.25 20 mV 0.2 0.05 0 −1 −2 2 mV 0.1 70 1 10 mV 0.15 3 2 VS = 5 V RP = 5.1 kW CL = 50 pF TA = 25°C 5 mV 40 mV 80 −3 INPUT −4 0 −0.05 −3 3 6 9 12 30 CL = 15 pF 20 3 6 9 12 15 18 21 24 27 30 VS, SUPPLY VOLTAGE (V) Figure 8. tPHL vs. Overdrive Figure 9. Fall Time vs. VS 33 36 1 TA = −55°C TA = −40°C TA = 25°C TA = 70°C TA = 85°C TA = 125°C 0.8 0.2 0 −0.2 −0.4 −0.6 −1 −1.5 CL = 50 pF 40 PROPAGATION DELAY (ms) 0.4 −0.8 CL = 100 pF 50 0 OFFSET VOLTAGE (mV) OFFSET VOLTAGE (mV) 0.6 60 −6 15 1 0.8 50 mV Overdrive RP = 5.1k to VDD TA = 25°C 10 −5 0 tFall, FALL TIME (ns) INPUT AMPLITUDE (V) 0.35 4 OUTPUT AMPLITUDE (V) 0.4 VDD = 1.5 V VSS = −1.5 V −1.0 0.6 0 0.5 TA = 70°C TA = 85°C TA = 125°C 0.4 0.2 0 −0.2 −0.4 −0.6 −0.8 −0.5 TA = −55°C TA = −40°C TA = 25°C −1 −2.5 VDD = 2.5 V VSS = −2.5 V −2.0 −1.5 −1.0 −0.5 0 0.5 INPUT COMMON MODE VOLTAGE (V) INPUT COMMON MODE VOLTAGE (V) Figure 10. VOS vs. VCM (VS = 3 V) Figure 11. VOS vs. VCM (VS = 5 V) http://onsemi.com 6 1.0 1.5 NCV2393, TS393 1 OFFSET VOLTAGE (mV) 0.8 0.6 0.4 0.2 0 −0.2 −0.4 −0.6 −0.8 −1 −1.5 VDD = 5 V VSS = −5 V TA = −55°C TA = −40°C TA = 25°C −1.0 TA = 70°C TA = 85°C TA = 125°C −0.5 0 INPUT COMMON MODE VOLTAGE (V) Figure 12. VOS vs. VCM (VS = 10 V) http://onsemi.com 7 0.5 NCV2393, TS393 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. −X− A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J SOLDERING FOOTPRINT* S MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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