NE521 D

NE521
High−Speed
Dual−Differential
Comparator/Sense Amp
Features
•
•
•
•
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TTL-Compatible Strobes and Outputs
Large Common-Mode Input Voltage Range
Operates from Standard Supply Voltages
Pb−Free Packages are Available
MARKING
DIAGRAMS
14
Applications
• MOS Memory Sense Amp
• A-to-D Conversion
• High-Speed Line Receiver
SOIC−14
D SUFFIX
CASE 751A
1
NE521G
AWLYWW
1
MAXIMUM RATINGS
Rating
Supply Voltage
Positive
Negative
Differential Input Voltage
Symbol
Value
V+
V−
+7.0
−7.0
VIDR
"6.0
Input Voltage
Common Mode
Strobe/Gate
VIN
Maximum Power Dissipation (Note 1)
TA = 25°C (Still−Air)
N Package
D Package
PD
Thermal Resistance, Junction−to−Ambient
N Package
D Package
RqJA
Unit
V
14
PDIP−14
N SUFFIX
CASE 646
1
NE521N
AWLYYWWG
1
V
V
"5.0
+5.25
mW
1420
1040
A
WL
Y, YY
WW
G
PIN CONNECTIONS
°C/W
100
145
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
D, N Packages
Operating Temperature Range
TA
0 to 70
°C
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
150
°C
Lead Soldering Temperature (10 sec max)
Tsld
+230
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Derate above 25°C at the following rates:
N package at 10 mW/°C
D package at 6.9 mW/°C.
INPUT 1A
1
14
V+
INPUT 1B
2
13
V−
NC
3
12
INPUT 2A
OUTPUT 1Y
4
11
INPUT 2B
STROBE 1G
5
10
NC
STROBE S
6
9
OUTPUT 2Y
GROUND
7
8
STROBE 2G
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 4
1
Publication Order Number:
NE521/D
NE521
LOGIC FUNCTION TABLE
VID (A+, B)
Strobe S
Strobe G
Output (Y)
VID v −VOS
H
H
L
−VOS < VID < VOS
H
H
Undefined
VID w VOS
H
H
H
X
L
X
H
X
X
L
H
(1)
INPUT 1A
(2)
INPUT 1B
(12)
INPUT 2A
(11)
INPUT 2B
(4)
OUTPUT 1Y
(5)
STROBE 1G
STROBE S
(6)
(9)
(8)
OUTPUT 3Y
STROBE 2G
Figure 1. Block Diagram
14
V+
R2
R17
R1
1
−
Q2
Q8
R5
V−
R24
4
6
5
Q13
R3
R14
Q11
R15
R23
R22
D1
D2
Q27
R6
7
R8
R7
R10
Q18
Q16
11
Q7
Q5
Q6
Q28
Q10
R4
12
Q29
Q26
+
Q9
13
R25
Q30
R16
D6
D7
Q1
R21
Q25
Q3
Q4
2
R20
Q17
R9
Q36
Q19
D3
R28
R29
+
−
Q35
Q15
Q14
D4
Q20
R12
R11
D5
Q22
Q23
8
Q24
R18
Q21
R19
Q32
Q31
Figure 2. Equivalent Schematic
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2
Q34
Q32
R26
V+
9
R30
R27
R34
NE521
DC ELECTRICAL CHARACTERISTICS (V+ = +5.0 V; V− = −5.0 V, TA = 0°C to +70°C, unless otherwise noted.)
Limits
Test Conditions
Symbol
Input Offset Voltage
At 25°C
Overtemperature Range
V+ = +4.75 V; V− = −4.75 V
VOS
Input Bias Current
At 25°C
Overtemperature Range
V+ = +5.25 V; V− = −5.25 V
IBIAS
Input Offset Current
At 25°C
Overtemperature Range
V+ = +5.25 V; V− = −5.25 V
IOS
Common-Mode Voltage Range
V+ = +4.75 V; V− = −4.75 V
VCM
Input Current
High
V+ = +5.25 V; V− = −5.25 V
VIH = 2.7 V
1G or 2G Strobe
Common Strobe S
IIH
Characteristic
Input Current
Low
Output Voltage
High
Low
VIL = 0.5 V
1G or 2G Strobe
Common Strobe S
IIL
VI(S) = 2.0 V
V+ = +4.75 V; V− = −4.75 V;
ILOAD = −1.0 mA
V+ = +5.25 V; V− = −5.25 V;
ILOAD = 20 mA
Supply Voltage
Positive
Negative
−
Supply Current
Positive
Negative
V+ = +5.25 V; V− = −5.25 V;
TA = 25°C
Short−Circuit Output Current
−
VOH
Min
Typ
Max
−
−
6.0
−
7.5
10
−
−
7.5
−
20
40
−
−
1.0
−
5.0
12
−3.0
−
+3.0
Unit
mV
mA
mA
V
mA
−
−
−
−
50
100
−
−
−
−
−2.0
−4.0
2.7
3.4
VOL
mA
V
0.5
V
V+
V−
4.75
−4.75
5.0
−5.0
5.25
−5.25
ICC+
ICC−
−
−
27
−15
35
−28
ISC
−40
−
−100
mA
mA
AC ELECTRICAL CHARACTERISTICS (TA = 25°C; RL = 280 W; CL = 15 pF, V+ = 5.0 V; V− = 5.0 V, guaranteed by characterization)
Limits
Characteristic
From Input
To Output
Symbol
Min
Typ
Max
Amp
Amp
Strobe
Strobe
Output
Output
Output
Output
tPLH(D)
tPHL(D)
tPLH(S)
tPHL(S)
−
−
−
−
9.6
8.2
4.8
3.9
12
9.0
10
6.0
−
−
fMAX
40
55
−
Unit
Large−Signal Switching Speed
Propagation Delay
Low to High (Note 2)
High to Low (Note 2)
Low to High (Note 3)
High to Low (Note 3)
Max. Operating Frequency
ns
2. Response time measured from 0 V point of "100 mVP-P 10 MHz square wave to the 1.5 V point of the output.
3. Response time measured from 1.5 V point of input to 1.5 V point of the output.
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3
MHz
NE521
3
100mV
2
5mV
20mV
1
10mV
0
100
50
0
0
5
10
15
20
25
TA = 25oC
VS = +5V
4
3
2
50mV
5mV
1
100mV
10mV
12
TESPONSE TIME (ns)
OUTPUT VOLTAGE (V)
VS = +5V
TA = 25oC
4
INPUT VOLTAGE (mV)
INPUT VOLTAGE (mV)
OUTPUT VOLTAGE (V)
TYPICAL PERFORMANCE CHARACTERISTICS
0
100
30
0
5
10
4
15
20
25
60
30
20
Figure 4. Response Time for
Various Input Overdrives
PROPAGATION DELAY (ns)
8
TPD (HL)
6
16
14
12
10
TPD (LH)
8
TPD (HL)
6
3.0
2.0
1.0
VOL
2
20
30
40
50
60
70
100
1000
11
1.0
INPUT OFSET CURRENT ( μ A)
INPT BIAS CURRENT ( μ A)
1.1
10
9
8
7
6
+25
o
Figure 8. Output Voltage vs.
Ambient Temperature
0.9
0.8
0.7
0.6
0.5
−25
+25
+75
AMBIENT TEMPERATURE (oC)
+125
−75
−25
+25
+75
AMBIENT TEMPERATURES (oC)
Figure 9. Input Bias Current
vs. Ambient Temperature
Figure 10. Input Offset
Current vs. Ambient
Temperature
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4
+75
AMBIENT TEMPERATURE ( C)
Figure 7. Propagation Delay
for Various Input Voltages
12
−75
−25
−75
INPUT VOLTAGE (m Vp−p)
INPUT VOLTAGE (mVp−p)
Figure 6. Propagation Delay
for Various Input Voltages
+140
VOH
4
10
+100
4.0
VS = +5V
10MHz SQUARE
WAVE INPUT
TA = 25oC
18
TPD (LH)
+60
Figure 5. Response Time
vs. Temperature
OUTPUT VOLTAGE (V)
VS = +5V
10MHz SQUARE
WAVE INPUT
TA = 25oC
−20
AMBIENT TEMPERATURE (oC)
TIME — nS
20
PROPAGATION DELAY (ns)
TPD (HL)
6
2
0
Figure 3. Response Time for
Various Input Overdrives
10
TPD (LH)
8
50
TIME — nS
12
10
+125
+125
NE521
ORDERING INFORMATION
Device
Temperature Range
Package
NE521D
SOIC−14
NE521DG
SOIC−14
(Pb−Free)
NE521DR2
NE521DR2G
Shipping†
55 Units/Rail
SOIC−14
0 to +70°C
SOIC−14
(Pb−Free)
NE521N
PDIP−14
NE521NG
PDIP−14
(Pb−Free)
2500/Tape & Reel
25 Units/Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
5
NE521
PACKAGE DIMENSIONS
SOIC−14
CASE 751A−03
ISSUE H
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.127
(0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
−A−
14
8
−B−
P 7 PL
0.25 (0.010)
M
7
1
G
−T−
D 14 PL
0.25 (0.010)
T B
S
A
DIM
A
B
C
D
F
G
J
K
M
P
R
J
M
K
M
F
R X 45 _
C
SEATING
PLANE
B
M
S
SOLDERING FOOTPRINT*
7X
7.04
14X
1.52
1
14X
0.58
1.27
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
MILLIMETERS
MIN
MAX
8.55
8.75
3.80
4.00
1.35
1.75
0.35
0.49
0.40
1.25
1.27 BSC
0.19
0.25
0.10
0.25
0_
7_
5.80
6.20
0.25
0.50
INCHES
MIN
MAX
0.337 0.344
0.150 0.157
0.054 0.068
0.014 0.019
0.016 0.049
0.050 BSC
0.008 0.009
0.004 0.009
0_
7_
0.228 0.244
0.010 0.019
NE521
PACKAGE DIMENSIONS
PDIP−14
CASE 646−06
ISSUE P
14
8
1
7
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
4. DIMENSION B DOES NOT INCLUDE MOLD FLASH.
5. ROUNDED CORNERS OPTIONAL.
B
A
F
L
N
C
−T−
SEATING
PLANE
H
G
D 14 PL
J
K
0.13 (0.005)
M
DIM
A
B
C
D
F
G
H
J
K
L
M
N
INCHES
MIN
MAX
0.715
0.770
0.240
0.260
0.145
0.185
0.015
0.021
0.040
0.070
0.100 BSC
0.052
0.095
0.008
0.015
0.115
0.135
0.290
0.310
−−−
10 _
0.015
0.039
MILLIMETERS
MIN
MAX
18.16
19.56
6.10
6.60
3.69
4.69
0.38
0.53
1.02
1.78
2.54 BSC
1.32
2.41
0.20
0.38
2.92
3.43
7.37
7.87
−−−
10 _
0.38
1.01
M
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7
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For additional information, please contact your local
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NE521/D