Ordering number : ENA1511B MCH3914 N-Channel JFET http://onsemi.com 15V, 16 to 50mA, 29mS, MCPH3 Features • • • • • | yfs | is large Ciss is small Small package FBET process Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSX 15 V Gate-to-Drain Voltage VGDS --15 V Gate Current IG 5 Drain Current ID 50 mA Allowable Power Dissipation PD 300 mW Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (600mm2×0.8mm) mA 150 °C --55 to +150 °C This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7019A-006 0.15 0.25 2.0 MCH3914-7-TL-H MCH3914-8-TL-H • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking 1.6 0 to 0.02 J R A N K LOT No. LOT No. 2.1 3 TL 0.25 1 0.65 2 0.3 Electrical Connection 0.07 0.85 3 1 : Source 2 : Drain 3 : Gate MCPH3 1 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 April, 2014 42514HK TC-00003115/80812TKIM/72209TKIM AC No. A1511-1/4 MCH3914 Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Drain Breakdown Voltage V(BR)GDS IGSS Gate-to-Source Leakage Current Cutoff Voltage VGS(off) IDSS Zero-Gate Voltage Drain Current Ciss Reverse Transfer Capacitance Crss IG=--10µA, VDS=0V VGS=--10V, VDS=0V VDS=5V, ID=10µA typ Unit max --15 V --1.0 --0.6 --1.4 16.0* VDS=5V, ID=10mA, f=1kHz VDS=5V, VGS=0V, f=1kHz | yfs |2 Input Capacitance min VDS=5V, VGS=0V | yfs |1 Forward Transfer Admittance Ratings Conditions nA --3.0 V 50.0* mA 14 21 mS 14 29 mS 4.9 pF 1.4 pF VDS=5V, VGS=0V, f=1MHz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. * : The MCH3914 is classified by IDSS as follows : (unit : mA) Rank 7 8 IDSS 16.0 to 32.0 25.0 to 50.0 Ordering Information Package Shipping MCH3914-7-TL-H Device MCPH3 3,000pcs./reel MCH3914-8-TL-H MCPH3 3,000pcs./reel ID -- VDS 24 60 VGS=0V Pb Free and Halogen Free ID -- VGS VDS=5V 50 --0.2V 16 12 --0.4V 8 --0.6V --0.8V 4 40 30 A m 0 =5 SS 32 m A Drain Current, ID -- mA 20 Drain Current, ID -- mA memo A m 25 A m 20 ID 20 10 mA 16 --1.0V 0 0 4 8 12 16 Drain-to-Source Voltage, VDS -- V 20 HDR02811 0 --2.8 --2.4 --2.0 --1.6 --1.2 --0.8 Gate-to-Source Voltage, VGS -- V --0.4 0 IT14783 No. A1511-2/4 MCH3914 ID -- VGS VDS=5V IDSS=25mA °C 30 Ta =-2 5 20 75 10 --1.6 --1.2 --0.8 VGS(off) -- IDSS 7 2 5 3 Drain Current, IDSS -- mA 1.0 7 3 5 7 7 2 10 3 5 10 2 Drain-to-Source Voltage, VDS -- V ITR02817 7 100 IT14784 Ciss -- VDS VGS=0V f=1MHz 3 2 7 1.0 2 3 5 7 2 10 Drain-to-Source Voltage, VDS -- V PD -- Ta 350 2 2 5 5 100 IT14785 VGS=0V f=1MHz 1.0 | yfs | (I =1 D 0mA) 1.0 7 3 5 7 2 Drain Current, IDSS -- mA Crss -- VDS 5 | yfs | 7 --1.0 10 =0V) (VGS 3 10 2 7 5 ITR02813 VDS=5V ID=10µA 5 VDS=5V f=1kHz 7 10 0 Input Capacitance, Ciss -- pF Cutoff Voltage, VGS(off) -- V °C 3 5 Reverse Transfer Capacitance, Crss -- pF °C --0.4 Gate-to-Source Voltage, VGS -- V 5 25 Allowable Power Dissipation, PD -- mW Drain Current, ID -- mA 40 0 --2.0 | yfs | -- IDSS 100 Forward Transfer Admittance, | yfs | -- mS 50 ITR02816 When mounted on ceramic substrate (600mm2×0.8mm) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14786 No. A1511-3/4 MCH3914 Outline Drawing MCH3914-7-TL-H, MCH3914-8-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1511-4/4