DESIGNS FOR NEW D E D N E EMENT OMM NOT REC D REPLAC E D N E M M enter at NO RECO Support C m/tsc l a ic n h c e rT il.co contact ou SIL or www.inters R E T N -I 8 1-88 TM March 2007 Features HCTS14MS Radiation Hardened HEX Inverting Schmitt Trigger Pinouts • 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T14 TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day (Typ) A1 1 14 VCC • Dose Rate Survivability: >1 x 1012 RAD (Si)/s Y1 2 13 A6 • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse A2 3 12 Y6 -9 • Cosmic Ray Upset Rate 2 x 10 Errors/Bit Day Y2 4 11 A5 • Latch-Up Free Under Any Conditions A3 5 10 Y5 • Military Temperature Range: -55oC to +125oC Y3 6 9 A4 GND 7 8 Y4 • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • Input Current Levels Ii ≤ 5μA at VOL, VOH 14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP3-F14 TOP VIEW Description The Intersil HCTS14MS is a Radiation Hardened HEX Inverting Schmitt trigger. A high on any input forces the output to a Low state. A1 1 14 VCC Y1 2 13 A6 The HCTS14MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. A2 3 12 Y6 Y2 4 11 A5 A3 5 10 Y5 The HCTS14MS is supplied in a 14 lead Ceramic flatpack Package (K suffix) or a 14 lead SBDIP Package (D suffix). Y3 6 9 A4 GND 7 8 Y4 TRUTH TABLE Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL HCTS14DMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead SBDIP HCTS14KMSR -55oC to +125oC Intersil Class S Equivalent 14 Lead Ceramic Flatpack PACKAGE HCTS14D/ Sample +25oC Sample 14 Lead SBDIP HCTS14K/ Sample +25oC Sample 14 Lead Ceramic Flatpack HCTS14HMSR +25oC OUTPUTS Yn L H H L NOTE: L = Logic Level Low, H = Logic level High Functional Diagram An Yn Die DB NA Die INPUTS An CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a trademark of Intersil Americas Inc. Copyright © Intersil Americas Inc. 2002, 2007. All Rights Reserved Spec Number 1 FN 518607 3205.2 Specifications HCTS14MS Absolute Maximum Ratings Reliability Information Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . . ±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec). . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.66W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.43W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.. Operating Conditions Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.5V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . Unlimited Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current Output Current (Sink) SYMBOL ICC IOL Output Current (Source) IOH Output Voltage Low VOL Output Voltage High Input Leakage Current Noise Immunity Functional Test (NOTE 1) CONDITIONS VOH IIN FN LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 10 μA - 200 μA 4.8 - mA VCC = 5.5V, VIN = VCC or GND 2, 3 VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V +125oC, +25oC 1 VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V -55oC o o 2, 3 +125 C, -55 C 4.0 - mA 1 +25oC -4.8 - mA -4.0 - mA 2, 3 +125oC, -55oC VCC = 4.5V, VIH = 2.25V, IOL = 50μA, VIL = 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 2.75V, IOL = 50μA, VIL = 0.5V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 2.25V, IOH = -50μA, VIL = 0.5V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 2.75V, IOH = -50μA, VIL = 0.5V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC -0.5 0.5 μA -5.0 5.0 μA 4.0 0.5 V VCC = 4.5V, VIH = 2.25V, VIL = 0.5V 2, 3 7, 8A, 8B +125oC, +25o -55oC o o C, +125 C, -55 C NOTES: 1. All voltages reference to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 2 518607 Specifications HCTS14MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL Propagation Delay TPHL TPLH Input Switch Point VT+ VT- VH LIMITS GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 9 +25oC 2 19 ns 10, 11 +125oC, -55oC 2 21 ns 9 +25oC 2 25 ns 10, 11 +125oC, -55oC 2 26 ns 9 +25oC 0.5 2.25 V 10, 11 +125oC, -55oC 0.5 2.25 V 9 +25oC 0.5 2.25 V 10, 11 +125oC, -55oC 0.5 2.25 V 9 +25oC 0.1 1.40 V 10, 11 +125oC, -55oC 0.1 1.40 V VCC = 4.5V, VIH = 3.0V, VIL = 0V VCC = 4.5V, VIH = 3.0V, VIL = 0V VCC = 4.5V VCC = 4.5V VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance CIN Output Transition Time TTHL TTLH CONDITIONS NOTES TEMPERATURE MIN MAX UNITS VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz 1 +25oC - 26 pF 1 +125oC, -55oC - 39 pF VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz 1 +25oC - 10 pF 1 +125oC - 10 pF 1 +25oC - 15 ns 1 +125oC - 22 ns VCC = 4.5V, VIH = 4.5V, VIL = 0V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current SYMBOL ICC (NOTES 1, 2) CONDITIONS 200K RAD LIMITS TEMPERATURE VCC = 5.5V, VIN = VCC or GND +25 oC MIN MAX UNITS - 0.2 mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25o C 4.0 - mA Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -4.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2 VIL = 0.4V at 200K RAD, IOL = 50μA +25oC - 0.1 V Spec Number 3 518607 Specifications HCTS14MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER SYMBOL Output Voltage High TEMPERATURE MIN MAX UNITS VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.4V at 200K RAD, IOH = -50μA +25oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND +25oC - ±5 μA VCC = 4.5V, VIH = 2.25V, VIL = 0.4V at 200K RAD, (Note 3) +25 oC - - - TPHL VCC = 4.5V +25oC 2 21 ns TPLH VCC = 4.5V +25oC 2 31 ns VT+ VCC = 4.5 +25oC 0.40 2.25 V VT- VCC = 4.5 +25oC 0.40 2.25 V VH VCC = 4.5 +25oC 0.10 1.40 V VOH Input Leakage Current IIN Noise Immunity Functional Test FN Propagation Delay Input Switch Points 200K RAD LIMITS (NOTES 1, 2) CONDITIONS NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 3μA IOL/IOH 5 -15% of 0 Hour PARAMETER TABLE 6. APPLICABLE SUBGROUPS GROUP A SUBGROUPS CONFORMANCE GROUPS MIL-STD-883 METHOD TESTED FOR -Q RECORDED FOR -Q Initial Test 100% 5004 1, 7, 9 1 (Note 2) Interim Test 100% 5004 1, 7, 9, Δ 1, Δ (Note 2) PDA 100% 5004 1, 7, Δ Final Test 100% 5004 2, 3, 8A, 8B, 10, 11 Group A (Note 1) Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B5 Sample 5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Δ Subgroup B6 Sample 5005 1, 7, 9 Group D Sample 5005 1, 7, 9 1, 2, 3, Δ (Note 2) NOTES: 1. Alternate Group A testing in accordance with MIL-STD-883 Method 5005 may be exercised. 2. Table 5 parameters only. Spec Number 4 518607 Specifications HCTS14MS TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 14 - - - 1, 3, 5, 9, 11, 13, 14 - - 2, 4, 6, 8, 10, 12 14 1, 3, 5, 9, 11, 13 - STATIC BURN-IN I TEST CONDITIONS (Note 1) 2, 4, 6, 8, 10, 12 1, 3, 5, 7, 9, 11, 13 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 2, 4, 6, 8, 10, 12 7 DYNAMIC BURN-IN I TEST CONNECTIONS (Note 2) - 7 NOTES: 1. Each pin except VCC and GND will have a resistor of 10kΩ ± 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1kΩ ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 2, 4, 6, 8, 10, 12 7 1, 3, 5, 9, 11, 13, 14 NOTE: Each pin except VCC and GND will have a resistor of 47kΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 5 518607 HCTS14MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1 and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% External Visual, Method 2009 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 6 518607 HCTS14MS AC Timing Diagrams Hysteresis Definition, Characteristic and Test Setup VIH INPUT VS VIL VO TPLH VH VH = VT+ - VT- TPHL VOH VS VI OUTPUT VT- VOL VOH VOL TTLH TTHL 80% 20% VT+ 80% VT- VCC 20% OUTPUT VI VH GND FIGURE 1 VCC VO AC VOLTAGE LEVELS PARAMETER VT+ GND HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VIL 0 V GND 0 V FIGURE 2 AC Load Circuit DUT TEST POINT CL RL CL = 50pF RL = 500Ω FIGURE 3 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Spec Number 7 518607 HCTS14MS Die Characteristics DIE DIMENSIONS: 87 x 88 mils 2,20 x 2.24mm METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100μm x 100μm 4 x 4 mils Metallization Mask Layout HCTS14MS A1 (1) VCC (14) A6 (13) Y1 (2) (12) Y6 (11) A5 A2 (3) (10) Y5 Y2 (4) A3 (5) (9) A4 (6) Y3 (7) GND (8) Y4 NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS14 is TA14443A. Spec Number 8 518607