BAS16WT1G Silicon Switching Diode Features • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com 1 ANODE 3 CATHODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Continuous Reverse Voltage VR 100 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA Peak Forward Surge Current Pulse Width = 10 ms Total Power Dissipation, One Diode Loaded TA = 25°C Derate above 25°C Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Operating and Storage Junction Temperature Range PD TJ, Tstg 200 mW 1.6 mW/°C −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient One Diode Loaded Mounted on a Ceramic Substrate (10 x 8 x 0.6 mm) Symbol Max Unit RqJA 625 °C/W MARKING DIAGRAM A6 MG G SC−70 CASE 419 STYLE 2 1 A6 = Specific Device Code M = Date Code G = Pb−Free Package (*Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† BAS16WT1G SC−70 (Pb−Free) 3000 / Tape & Reel SBAS16WT1G SC−70 (Pb−Free) 3000 / Tape & Reel NSVBAS16WT3G SC−70 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 March, 2014− Rev. 11 1 Publication Order Number: BAS16WT1/D BAS16WT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max − − − − 715 866 1000 1250 − − − 1.0 50 30 CD − 2.0 pF trr − 6.0 ns Stored Charge (IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2) QS − 45 PC Forward Recovery Voltage (IF = 10 mA, tr = 20 ns) (Figure 3) VFR − 1.75 V Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) VF Reverse Current (VR = 100 V) (VR = 75 V, TJ = 150°C) (VR = 25 V, TJ = 150°C) IR Capacitance (VR = 0, f = 1.0 MHz) Reverse Recovery Time (IF = IR = 10 mA, RL = 50 W) (Figure 1) http://onsemi.com 2 Unit mV mA BAS16WT1G 1 ns MAX DUT 500 W t trr 10% tif 50 W DUTY CYCLE = 2% 90% VF Irr 100 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit OSCILLOSCOPE R . 10 MW C 3 7 pF 500 W VC DUT BAW62 VCM 20 ns MAX D1 t 10% 243 pF 100 KW Qa VCM + C DUTY CYCLE = 2% t 90% Vf 400 ns Figure 2. Stored Charge Equivalent Test Circuit V 120 ns 450 W 1 KW V 90% DUT Vfr t 10% DUTY CYCLE = 2% 2 ns MAX Figure 3. Forward Recovery Voltage Equivalent Test Circuit http://onsemi.com 3 50 W BAS16WT1G 10 100 IR , REVERSE CURRENT (μA) 10 TA = 85°C TA = 25°C 1.0 TA = -40°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 10 0 1.2 Figure 4. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Leakage Current 0.68 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Capacitance http://onsemi.com 4 8 50 BAS16WT1G PACKAGE DIMENSIONS SC−70 (SOT−323) CASE 419−04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 c A2 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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