BAS16WT1 D

BAS16WT1G
Silicon Switching Diode
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
1
ANODE
3
CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IR
200
mA
IFM(surge)
500
mA
Peak Forward Surge Current
Pulse Width = 10 ms
Total Power Dissipation,
One Diode Loaded TA = 25°C
Derate above 25°C
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Operating and Storage Junction
Temperature Range
PD
TJ, Tstg
200
mW
1.6
mW/°C
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Ambient
One Diode Loaded
Mounted on a Ceramic Substrate
(10 x 8 x 0.6 mm)
Symbol
Max
Unit
RqJA
625
°C/W
MARKING
DIAGRAM
A6 MG
G
SC−70
CASE 419
STYLE 2
1
A6
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BAS16WT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
SBAS16WT1G
SC−70
(Pb−Free)
3000 / Tape & Reel
NSVBAS16WT3G
SC−70
(Pb−Free)
10000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
March, 2014− Rev. 11
1
Publication Order Number:
BAS16WT1/D
BAS16WT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
−
−
−
−
715
866
1000
1250
−
−
−
1.0
50
30
CD
−
2.0
pF
trr
−
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
QS
−
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
−
1.75
V
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
Reverse Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
IR
Capacitance
(VR = 0, f = 1.0 MHz)
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
http://onsemi.com
2
Unit
mV
mA
BAS16WT1G
1 ns MAX
DUT
500 W
t
trr
10%
tif
50 W
DUTY CYCLE = 2%
90%
VF
Irr
100 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
OSCILLOSCOPE
R . 10 MW
C 3 7 pF
500 W
VC
DUT
BAW62
VCM
20 ns MAX
D1
t
10%
243 pF
100 KW
Qa
VCM +
C
DUTY CYCLE = 2%
t
90%
Vf
400 ns
Figure 2. Stored Charge Equivalent Test Circuit
V
120 ns
450 W
1 KW
V
90%
DUT
Vfr
t
10%
DUTY CYCLE = 2%
2 ns MAX
Figure 3. Forward Recovery Voltage Equivalent Test Circuit
http://onsemi.com
3
50 W
BAS16WT1G
10
100
IR , REVERSE CURRENT (μA)
10
TA = 85°C
TA = 25°C
1.0
TA = -40°C
TA = 125°C
1.0
TA = 85°C
0.1
TA = 55°C
0.01
TA = 25°C
0.001
0.1
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
10
0
1.2
Figure 4. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Leakage Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
TA = 150°C
0.64
0.60
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
http://onsemi.com
4
8
50
BAS16WT1G
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
e1
DIM
A
A1
A2
b
c
D
E
e
e1
L
HE
3
E
HE
1
2
b
e
A
0.05 (0.002)
MIN
0.80
0.00
0.30
0.10
1.80
1.15
1.20
0.20
2.00
MILLIMETERS
NOM
MAX
0.90
1.00
0.05
0.10
0.70 REF
0.35
0.40
0.18
0.25
2.10
2.20
1.24
1.35
1.30
1.40
0.65 BSC
0.38
0.56
2.10
2.40
MIN
0.032
0.000
0.012
0.004
0.071
0.045
0.047
0.008
0.079
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
0.026 BSC
0.015
0.083
MAX
0.040
0.004
0.016
0.010
0.087
0.053
0.055
0.022
0.095
c
A2
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
http://onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
BAS16WT1/D