M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. Features • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Available in 8 mm Tape and Reel • http://onsemi.com SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA SURFACE MOUNT Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel. Pb−Free Packages are Available 3 CATHODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA151KT1 Symbol Value Unit VR 40 Vdc M1MA152KT1 Peak Reverse Voltage M1MA151KT1 Peak Forward Current Peak Forward Surge Current VRM 40 Vdc IF 100 mAdc IFM 225 mAdc IFSM (Note 1) 500 mAdc 80 SC−59 CASE 318D MARKING DIAGRAM THERMAL CHARACTERISTICS Rating 2 NO CONNECTION 80 M1MA152KT1 Forward Current 1 ANODE Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. t = 1 SEC Mx M G 1 Mx x = Device Code = H for 151 I for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 8 1 Publication Order Number: M1MA151KT1/D M1MA151KT1, M1MA152KT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current Symbol Condition Min Max Unit IR VR = 35 V − 0.1 mAdc VR = 75 V − 0.1 VF IF = 100 mA − 1.2 Vdc VR IR = 100 mA 40 − Vdc 80 − M1MA151KT1 M1MA152KT1 Forward Voltage Reverse Breakdown Voltage M1MA151KT1 M1MA152KT1 Diode Capacitance Reverse Recovery Time (Figure 1) CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr IF t t A 10% RL Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit ORDERING INFORMATION Device M1MA151KT1 M1MA151KT1G M1MA152KT1 M1MA152KT1G Package Shipping† SC−59 3000 Units / Tape & Reel SC−59 (Pb−Free) 3000 Units / Tape & Reel SC−59 3000 Units / Tape & Reel SC−59 (Pb−Free) 3000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 M1MA151KT1, M1MA152KT1 PACKAGE DIMENSIONS SC*59 CASE 318D*04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e L A1 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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