M1MA151KT1 D

M1MA151KT1,
M1MA152KT1
Preferred Device
Single Silicon Switching
Diodes
These Silicon Epitaxial Planar Diodes are designed for use in ultra
high speed switching applications. These devices are housed in the
SC−59 package which is designed for low power surface mount
applications.
Features
• Fast trr, < 3.0 ns
• Low CD, < 2.0 pF
• Available in 8 mm Tape and Reel
•
http://onsemi.com
SC−59 PACKAGE SINGLE
SILICON SWITCHING DIODES
40/80 V−100 mA
SURFACE MOUNT
Use M1MA151/2KT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel.
Pb−Free Packages are Available
3 CATHODE
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
M1MA151KT1
Symbol
Value
Unit
VR
40
Vdc
M1MA152KT1
Peak Reverse Voltage
M1MA151KT1
Peak Forward Current
Peak Forward Surge Current
VRM
40
Vdc
IF
100
mAdc
IFM
225
mAdc
IFSM
(Note 1)
500
mAdc
80
SC−59
CASE 318D
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Rating
2
NO CONNECTION
80
M1MA152KT1
Forward Current
1
ANODE
Symbol
Max
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
−55 to + 150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. t = 1 SEC
Mx M G
1
Mx
x
= Device Code
= H for 151
I for 152
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2012
July, 2012 − Rev. 8
1
Publication Order Number:
M1MA151KT1/D
M1MA151KT1, M1MA152KT1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Reverse Voltage Leakage Current
Symbol
Condition
Min
Max
Unit
IR
VR = 35 V
−
0.1
mAdc
VR = 75 V
−
0.1
VF
IF = 100 mA
−
1.2
Vdc
VR
IR = 100 mA
40
−
Vdc
80
−
M1MA151KT1
M1MA152KT1
Forward Voltage
Reverse Breakdown Voltage
M1MA151KT1
M1MA152KT1
Diode Capacitance
Reverse Recovery Time (Figure 1)
CD
VR = 0, f = 1.0 MHz
−
2.0
pF
trr (Note 2)
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
−
3.0
ns
2. trr Test Circuit
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
IF
t
t
A
10%
RL
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100 W
tp = 2 ms
tr = 0.35 ns
Figure 1. Reverse Recovery Time Equivalent Test Circuit
ORDERING INFORMATION
Device
M1MA151KT1
M1MA151KT1G
M1MA152KT1
M1MA152KT1G
Package
Shipping†
SC−59
3000 Units / Tape & Reel
SC−59
(Pb−Free)
3000 Units / Tape & Reel
SC−59
3000 Units / Tape & Reel
SC−59
(Pb−Free)
3000 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
M1MA151KT1, M1MA152KT1
PACKAGE DIMENSIONS
SC*59
CASE 318D*04
ISSUE H
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3
HE
1
DIM
A
A1
b
c
D
E
e
L
HE
E
2
b
e
L
A1
MILLIMETERS
NOM
MAX
1.15
1.30
0.06
0.10
0.43
0.50
0.14
0.18
2.90
3.10
1.50
1.70
1.90
2.10
0.40
0.60
2.80
3.00
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
C
A
MIN
1.00
0.01
0.35
0.09
2.70
1.30
1.70
0.20
2.50
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb *Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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PUBLICATION ORDERING INFORMATION
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3
ON Semiconductor Website: www.onsemi.com
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For additional information, please contact your local
Sales Representative
M1MA151KT1/D