BTA12-600C4G, BTA12-800C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • • • TRIACS 12 AMPERES RMS 600 thru 800 VOLTS Blocking Voltage to 800 V On-State Current Rating of 12 Amperes RMS at 85°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 100 V/ms minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 6.0 A/ms minimum at 125°C Internally Isolated (2500 VRMS) Indicates UL Registered — File #E69369 These are Pb−Free Devices MT2 MT1 G MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA12−600C4G BTA12−800C4G VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 85°C) IT(RMS) 12 A ITSM 120 A Circuit Fusing Consideration (t = 8.3 ms) I2t 40 A2sec Peak Gate Current (TJ = 125°C, t = 20ms) IGM 2.0 A Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) PG(AV) 1.0 Operating Junction Temperature Range TJ Storage Temperature Range Tstg RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Value Unit V 600 800 1 2 BTA12−xCG AYWW TO−220AB CASE 221A STYLE 12 3 x A Y WW G = 6 or 8 = Assembly Location = Year = Work Week = Pb−Free Package PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 W 3 Gate −40 to +125 °C 4 No Connection −40 to +150 °C 2500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device Package Shipping BTA12−600C4G TO−220AB (Pb−Free) 50 Units / Rail BTA12−800C4G TO−220AB (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 April, 2012 − Rev. 1 1 Publication Order Number: BTA12−600C4/D BTA12−600C4G, BTA12−800C4G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Symbol Value Unit RqJC RqJA 2.5 60 °C/W TL 260 °C Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Characteristic Min Typ Max Unit − − − − 5.0 2.0 mA mA − − 1.55 V OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = +125°C IDRM, IRRM ON CHARACTERISTICS Peak On-State Voltage ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2% VTM Gate Trigger Current (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IGT Latching Current (VD = 12 V, IG = 60 mA, IG4 = 120 mA) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) IL Gate Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 Vdc, RL = 30 W) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) MT2(−), G(+) VGT Gate Non−Trigger Voltage (Continuous dc) (Main Terminal Voltage = 12 V, RL = 30 W, TJ = +125°C) All Four Quadrants VGD Holding Current (VD = 12 Vdc, Gate Open, Initiating Current = "200 mA) IH mA − − − − − − − − 25 25 25 50 − − − − − − − − 40 80 40 40 mA V − − − − − − − − 1.3 1.3 1.3 1.3 V 0.2 − − − − 25 mA di/dt(c) 6.0 − − A/ms dv/dt 100 − − V/ms DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Current (TC = +125°C) Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +125°C) http://onsemi.com 2 BTA12−600C4G, BTA12−800C4G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM 125 PD(AV), AVERAGE POWER DISSIPATION (WATT) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) BTA12−600C4G, BTA12−800C4G 115 α = 30° 105 60° 90° α 95 α 85 180° dc α = CONDUCTION ANGLE 75 0 2.0 4.0 6.0 8.0 10 12 14 28 24 α 20 α dc α = 180° 90° 60° 30° α = CONDUCTION ANGLE 16 12 8.0 4.0 0 0 2.0 4.0 6.0 8.0 10 IT(RMS), RMS ON‐STATE CURRENT (AMP) IT(RMS), RMS ON‐STATE CURRENT (AMP) Figure 1. Current Derating Figure 2. Power Dissipation 12 14 50 20 10 VGT , GATE TRIGGER VOLTAGE (NORMALIZED) IT, INSTANTANEOUS ON‐STATE CURRENT (AMPS) 100 5.0 2.0 TJ = 25°C TJ = 125°C 1.0 0.5 0.2 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 2.0 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 -60 VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS) -40 -20 0 20 40 60 TC, CASE TEMPERATURE (°C) Figure 4. Typical Gate Trigger Voltage Figure 3. Maximum On−State Voltage Characteristics http://onsemi.com 4 80 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2.8 2.0 IH , HOLDING CURRENT (NORMALIZED) I GT, GATE TRIGGER CURRENT (NORMALIZED) BTA12−600C4G, BTA12−800C4G MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 1.6 1.2 0.8 0.4 0 -60 -40 -20 0 20 40 60 2.4 1.6 1.2 0.8 0.4 0 -60 80 MAIN TERMINAL VOLTAGE = 12 Vdc ALL QUADRANTS 2.0 -40 -20 0 20 40 TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current Figure 6. Typical Holding Current 60 80 1.0 0.5 0.2 ZqJC(t) = r(t) • RqJC 0.1 0.05 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 20 50 t, TIME (ms) 100 Figure 7. Thermal Response http://onsemi.com 5 200 500 1.0 k 2.0 k 5.0 k 10 k BTA12−600C4G, BTA12−800C4G PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F 4 Q T SEATING PLANE C S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 12: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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