MAC12SM D

MAC12SM, MAC12SN
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
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Features
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
• Sensitive Gate Allows Triggering by Microcontrollers and other
•
•
•
•
•
•
•
•
•
•
Logic Circuits
Blocking Voltage to 800 Volts
On-State Current Rating of 12 Amperes RMS at 70°C
High Surge Current Capability − 90 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Maximum Values of IGT, VGT and IH Specified for Ease of Design
High Commutating di/dt − 8.0 A/ms Minimum at 110°C
Immunity to dV/dt − 15 V/msec Minimum at 110°C
Operational in Three Quadrants: Q1, Q2, and Q3
These Devices are Pb−Free and are RoHS Compliant*
MT2
MT1
G
MARKING
DIAGRAM
MAC12SxG
AYWW
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12SM
MAC12SN
VDRM,
VRRM
On-State RMS Current
(All Conduction Angles; TC = 70°C)
IT(RMS)
12
A
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 110°C)
ITSM
90
A
I2t
33
A2sec
PGM
16
W
PG(AV)
0.35
W
Circuit Fusing Consideration (t = 8.33 ms)
Peak Gate Power
(Pulse Width = 1.0 msec, TC = 70°C)
Average Gate Power
(t = 8.3 msec, TC = 70°C)
TO−220
CASE 221A
STYLE 4
Unit
V
1
2
3
600
800
Operating Junction Temperature Range
TJ
−40 to 110
°C
Storage Temperature Range
Tstg
−40 to 150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. (VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
x
A
Y
WW
G
= M, or N
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
3
Gate
4
Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC12SMG
TO−220
(Pb−Free)
50 Units / Rail
MAC12SNG
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 4
1
Publication Order Number:
MAC12SM/D
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
Value
Unit
RqJC
RqJA
2.2
62.5
°C/W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
0.01
2.0
−
−
1.85
−
−
−
1.5
2.5
2.7
5.0
5.0
5.0
−
2.5
10
−
−
−
3.0
5.0
3.0
15
20
15
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
(di/dt)c
8.0
10
−
A/ms
Critical Rate of Rise of Off-State Voltage
(VD = 67% VDRM, Exponential Waveform, RGK = 1 KW, TJ = 110°C)
dV/dt
15
40
−
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA; f = 60 Hz
di/dt
−
−
10
A/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM,
IRRM
TJ = 25°C
TJ = 110°C
mA
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 17 A)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH
Latching Current (VD = 12 V, IG = 5 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IL
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
V
mA
mA
mA
VGT
V
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open, TJ = 110°C,
f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
+ Current
VTM
Quadrant 1
MainTerminal 2 +
on state
IH
IRRM at VRRM
off state
IH
Holding Current
Quadrant 3
MainTerminal 2 −
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2
VTM
+ Voltage
IDRM at VDRM
MAC12SM, MAC12SN
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
(−) MT2
Quadrant III
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
0.90
VGT, GATE TRIGGER VOLTAGE (VOLTS)
IGT, GATE TRIGGER CURRENT (mA)
100
Q2
10
Q3
Q1
1
0.1
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
110
Q1
0.85
0.80 Q3
0.75
0.70
Q2
0.65
0.60
0.55
0.50
0.45
0.40
−40 −25 −10
5
20 35
50 65 80
TJ, JUNCTION TEMPERATURE (°C)
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
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3
95 110
MAC12SM, MAC12SN
100
IH, HOLDING CURRENT (mA)
IL , LATCHING CURRENT (mA)
100
Q1
10
Q2
Q3
1
0.1
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95
10
MT2 Positive
1
MT2 Negative
0.1
−40 −25 −10
5
20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
110
Figure 4. Typical Holding Current
versus Junction Temperature
P(AV), AVERAGE POWER DISSIPATION (WATTS)
Figure 3. Typical Latching Current
versus Junction Temperature
TC , CASE TEMPERATURE (°C)
110
100
30°, 60°
90
90°
80
180°
70
DC
60
0
10
4
6
8
IT(RMS), RMS ON-STATE CURRENT (AMPS)
2
12
25
DC
20
180°
120°
90°
15
60°
10
30°
5
0
0
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
Typical @ TJ = 25°C
Maximum @ TJ = 110°C
Maximum @ TJ = 25°C
10
1
4
10
2
6
8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
12
Figure 6. On-State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 5. Typical RMS Current Derating
100
95 110
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
Figure 8. Typical Thermal Response
0.1
0.5
1.5
2.5
3.5
4.5
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 7. Typical On-State Characteristics
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4
10000
MAC12SM, MAC12SN
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
ON Semiconductor and the
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For additional information, please contact your local
Sales Representative
MAC12SM/D