1PMT5920B Series 3.2 Watt Plastic Surface Mount POWERMITE® Package This complete new line of 3.2 Watt Zener Diodes are offered in highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE package has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles (1.1 mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines and many other industrial/consumer applications. http://onsemi.com PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES 6.2 - 47 VOLTS Features •Zener Breakdown Voltage: 6.2 - 47 V •DC Power Dissipation: 3.2 W with Tab 1 (Cathode) @ 75°C •Low Leakage < 5 mA •ESD Rating of Class 3 (> 16 kV) per Human Body Model •Low Profile - Maximum Height of 1.1 mm •Integral Heat Sink/Locking Tabs •Full Metallic Bottom Eliminates Flux Entrapment •Small Footprint - Footprint Area of 8.45 mm2 •Supplied in 12 mm Tape and Reel •Lead Orientation in Tape: Cathode (Short) Lead to Sprocket Holes •POWERMITE is JEDEC Registered as DO-216AA •Cathode Indicated by Polarity Band •Pb-Free Packages are Available 1 2 1: CATHODE 2: ANODE POWERMITE CASE 457 PLASTIC 1 2 MARKING DIAGRAM Mechanical Characteristics CASE: Void‐free, transfer‐molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 1 CATHODE M xxB G 2 ANODE 260°C for 10 Seconds M xxB G = Date Code = Specific Device Code (See Table on Page 2) = Pb-Free Package ORDERING INFORMATION Device Package Shipping† 1PMT59xxBT1G POWERMITE 3000/Tape&Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2007 October 2007 - Rev. 4 1 Publication Order Number: 1PMT5920B/D 1PMT5920B Series MAXIMUM RATINGS Rating Symbol Value Unit °PD° RqJA 500 4.0 248 °mW mW/°C °C/W RqJanode 35 °C/W °PD° RqJcathode 3.2 23 W °C/W TJ, Tstg -55 to +150 °C DC Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Lead (Anode) Maximum DC Power Dissipation (Note 2) Thermal Resistance from Junction-to-Tab (Cathode) Operating and Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted with recommended minimum pad size, PC board FR-4. 2. At Tab (Cathode) temperature, Ttab = 75°C ELECTRICAL CHARACTERISTICS (TL = 25°C unless I otherwise noted, VF = 1.5 V Max. @ IF = 200 mAdc for all types) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK VZ VR V IR VF IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF Zener Voltage Regulator ELECTRICAL CHARACTERISTICS (TL = 30°C unless otherwise noted, VF = 1.25 Volts @ 200 mA) Zener Voltage (Note 3) VZ @ IZT (Volts) IZT IR @ VR VR ZZT @ IZT (Note 4) ZZK @ IZK (Note 4) IZK Device* Device Marking Min Nom Max (mA) (mA) (V) (W) (W) (mA) 1PMT5920BT1G 20B 5.89 6.2 6.51 60.5 5.0 4.0 2.0 200 1.0 1PMT5921BT1G 21B 6.46 6.8 7.14 55.1 5.0 5.2 2.5 200 1.0 1PMT5924BT1G 24B 8.64 9.1 9.56 41.2 5.0 7.0 4.0 500 0.5 1PMT5927BT1G 27B 11.4 12 12.6 31.2 1.0 9.1 6.5 550 0.25 1PMT5929BT1G 29B 14.25 15 15.75 25 1.0 11.4 9.0 600 0.25 1PMT5933BT1G 33B 20.9 22 23.1 17 1.0 16.7 17.5 650 0.25 1PMT5934BT1G 34B 22.8 24 25.2 15.6 1.0 18.2 19 700 0.25 1PMT5935BT1G 35B 25.65 27 28.35 13.9 1.0 20.6 23 700 0.25 1PMT5941BT1G 41B 44.65 47 49.35 8.0 1.0 35.8 67 1000 0.25 3. Zener voltage is measured with the device junction in thermal equilibrium with an ambient temperature of 25°C. 4. Zener Impedance Derivation ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(ac) = 0.1 IZ(dc) with the ac frequency = 60 Hz. http://onsemi.com 2 1PMT5920B Series 3.5 100 3 IZ, ZENER CURRENT (mA) P D , MAXIMUM POWER DISSIPATION (W) TYPICAL CHARACTERISTICS 2.5 2 TL 1.5 1 10 1 0.5 0 0.1 25 50 75 100 125 150 175 5 6 9 10 7 8 VZ, ZENER VOLTAGE (VOLTS) T, TEMPERATURE (°C) Figure 2. VZ to 10 Volts IZ , ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 VZ, ZENER VOLTAGE (VOLTS) 90 100 qVZ, TEMPERATURE COEFFICIENT (mV/°C) Figure 1. Steady State Power Derating 10 8 VZ @ IZT 6 4 2 0 -2 -4 2 4 6 8 10 VZ, ZENER VOLTAGE (VOLTS) 12 Figure 4. Zener Voltage - To 12 Volts Figure 3. VZ = 12 thru 47 Volts 200 200 Z Z , DYNAMIC IMPEDANCE (OHMS) qVZ, TEMPERATURE COEFFICIENT (mV/°C) 11 VZ @ IZT 100 70 50 30 20 10 10 20 30 50 70 100 VZ, ZENER VOLTAGE (VOLTS) IZ(dc) = 1mA 100 70 50 30 20 10 7 5 10 mA 20 mA 3 2 5 200 Figure 5. Zener Voltage - 14 To 47 Volts 7 iZ(rms) = 0.1 IZ(dc) 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) Figure 6. Effect of Zener Voltage http://onsemi.com 3 70 100 1PMT5920B Series Z Z, DYNAMIC IMPEDANCE (OHMS) 1k TJ = 25°C iZ(rms) = 0.1 IZ(dc) 500 200 100 50 20 10 5 22 V 2 12 V 1 0.5 1 6.8 V 2 5 10 20 50 100 200 500 IZ, ZENER TEST CURRENT (mA) Figure 7. Effect of Zener Current C, CAPACITANCE (pF) 10,000 1000 MEASURED @ 0 V BIAS MEASURED @ 50% VR 100 10 1 10 VZ, REVERSE ZENER VOLTAGE (VOLTS) Figure 8. Capacitance versus Reverse Zener Voltage http://onsemi.com 4 100 1PMT5920B Series PACKAGE DIMENSIONS POWERMITE) CASE 457-04 ISSUE D F 0.08 (0.003) C -A- J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. TERM. 1 DIM A B C D F H J K L R S -BK TERM. 2 R L J MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF D H -T- 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. 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