Si4834BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V at 1.0 A 2.0 APPLICATIONS • Symmetrical Buck-Boost DC/DC Converter D2 D1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Schottky Diode G1 G2 Top View Ordering Information: Si4834BDY-T1-E3 (Lead (Pb)-free) Si4834BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range V 7.5 5.7 6.0 4.6 IDM Pulsed Drain Current Maximum Power Dissipationa ID A 30 IS PD 1.7 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit W - 55 to 150 °C THERMAL RESISTANCE RATINGS MOSFET Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Schottky Typ. Max. Typ. Max. 52 62.5 53 62.5 93 110 93 110 35 40 35 40 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72064 S09-0869-Rev. D, 18-May-09 www.vishay.com 1 Si4834BDY Vishay Siliconix MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = 250 µA 0.8 IGSS VDS = 0 V, VGS = ± 20 V Typ.a Max. Unit Static Gate Threshold Voltage Gate-Body Leakage VDS = 30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 85 °C b On-State Drain Current Drain-Source On-State Resistanceb ID(on) RDS(on) Forward Transconductanceb Diode Forward Voltageb gfs VSD Ch-1 3.0 V ± 100 nA 100 Ch-2 1 Ch-1 2000 Ch-2 15 VDS = 5 V, VGS = 10 V 20 A VGS = 10 V, ID = 7.5 A 0.017 0.022 VGS = 4.5 V, ID = 6.5 A 0.024 0.030 VDS = 15 V, ID = 7.5 A IS = 1 A, VGS = 0 V µA 19 Ω S Ch-1 0.47 0.5 Ch-2 0.75 1.2 7 11 V Dynamica Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.9 2.5 0.5 1.5 2.6 9 15 10 17 19 30 9 15 Ch-1 32 55 Ch-2 35 55 td(on) Rise Time Turn-Off Delay Time VDS = 15 V, VGS = 4.5 V, ID = 7.5 A VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω IF = 1.7 A, dI/dt = 100 A/µs Ω ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. SCHOTTKY SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Forward Voltage Drop VF Maximum Reverse Leakage Current Irm Junction Capacitance CT Test Conditions Typ. Max. IF = 1.0 A Min. 0.47 0.50 IF = 1.0 A, TJ = 125 °C 0.36 0.42 VR = 30 V 0.004 0.100 VR = 30 V, TJ = 100 °C 0.7 10 VR = - 30 V, TJ = 125 °C 3.0 20 VR = 10 V 50 Unit V mA pF Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72064 S09-0869-Rev. D, 18-May-09 Si4834BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 30 30 VGS = 10 V thru 5 V 4V 25 I D - Drain Current (A) I D - Drain Current (A) 25 20 15 10 20 15 10 TC = 125 °C 5 5 25 °C 3V - 55 °C 0 0 0 2 4 6 8 0 10 2 4 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5 1200 Ciss 960 C - Capacitance (pF) 0.030 VGS = 4.5 V 0.020 VGS = 10 V 720 480 Coss 0.010 240 Crss 0 0.000 0 5 10 15 20 25 0 30 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) I D - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 10 VDS = 15 V ID = 7.5 A 1.6 8 6 4 2 VGS = 10 V ID = 7.5 A 1.4 (Normalized) R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 3 VDS - Drain-to-Source Voltage (V) 0.040 RDS(on) - On-Resistance (Ω) 1 1.2 1.0 0.8 0 0 3 6 9 12 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72064 S09-0869-Rev. D, 18-May-09 15 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si4834BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 0.06 20 0.05 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.04 ID = 7.5 A 0.03 0.02 0.01 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 6 8 10 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 0.4 100 0.2 80 ID = 250 µA 0.0 60 Power (W) V GS(th) Variance (V) 4 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) - 0.2 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 TJ - Temperature (°C) 10- 1 1 10 Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 1 ms ID - Drain Current (A) 10 10 ms 1 100 ms 0.1 1s 10 s TC = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot www.vishay.com 4 Document Number: 72064 S09-0869-Rev. D, 18-May-09 Si4834BDY Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 93 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 72064 S09-0869-Rev. D, 18-May-09 www.vishay.com 5 Si4834BDY Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS 25 °C unless otherwise noted 20 10 10 I F - Forward Current (A) I R - Reverse Current (mA) TJ = 150 °C 1 30 V 0.1 24 V 0.01 TJ = 25 °C 0.001 1 0.0 0.0001 0 25 50 75 100 125 150 0.3 0.6 0.9 1.2 TJ - Temperature (°C) VF - Forward Voltage Drop (V) Reverse Current vs. Junction Temperature Forward Voltage Drop 1.5 200 C - Capacitance (pF) 160 120 80 Coss 40 0 0 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72064. www.vishay.com 6 Document Number: 72064 S09-0869-Rev. D, 18-May-09 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000