SS3P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Rectifiers FEATURES • Very low profile - typical height of 1.0 mm ® Available • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, • AEC-Q101 qualified DO-220AA (SMP) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V TJ max. 150 °C Package DO-220AA Diode variations Single MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS3P4 Maximum repetitive peak reverse voltage VRRM 40 V Maximum average forward rectified current (fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 50 A Device marking code Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Revision: 08-Oct-13 UNIT 34 EAS 11.25 mJ dV/dt 10 000 V/μs TJ, TSTG - 55 to + 150 °C Document Number: 88954 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3P4 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage IF = 3 A TJ = 25 °C TJ = 125 °C TJ = 25 °C Maximum reverse current at rated VR TJ = 125 °C Typical junction capacitance SYMBOL VF (1) TYP. MAX. 0.55 0.60 0.50 0.55 - 150 μA 7.5 15 mA IR (2) 4.0 V, 1 MHz CJ UNIT V 130 pF Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER Typical thermal resistance (1) SYMBOL SS3P4 RJA (1) 85 RJL (1) 15 RJC (1) 20 UNIT °C/W Note (1) Thermal resistance from junction to ambient and junction to lead mounted on PCB with 15 mm x 15 mm copper pad areas. R JL is measured at the terminal of cathode band. RJC is measured at the top center of the body ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SS3P4-M3/84A 0.024 84A 3000 7" diameter plastic tape and reel SS3P4-M3/85A 0.024 85A 10 000 13" diameter plastic tape and reel SS3P4HM3/84A (1) 0.024 84A 3000 7" diameter plastic tape and reel SS3P4HM3/85A (1) 0.024 85A 10 000 13" diameter plastic tape and reel Note (1) Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 50 Peak Forward Surge Current (A) Average Forward Rectified Current (A) 3.0 2.5 2.0 1.5 1.0 TL Measured at the Cathode Band Terminal 0.5 40 30 20 10 0 0 80 90 100 110 120 130 140 150 1 10 100 Lead Temperature (°C) Number of Cycles at 50 Hz Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Revision: 08-Oct-13 Document Number: 88954 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SS3P4 www.vishay.com Vishay General Semiconductor 1000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 TJ = 125 °C 10 0.1 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 1000 Transient Thermal Impedance (°C/W) 100 000 Instantaneous Reverse Leakage Current (µA) 100 TJ = 150 °C 10 000 TJ = 125 °C 1000 100 TJ = 25 °C 10 1 0.1 10 20 30 40 50 60 70 80 90 100 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) 0.012 (0.30) REF. Cathode Band 0.053 (1.35) 0.041 (1.05) 0.086 (2.18) 0.074 (1.88) 0.142 (3.61) 0.126 (3.19) 0.036 (0.91) 0.024 (0.61) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.158 (4.00) 0.146 (3.70) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) Revision: 08-Oct-13 0.025 0.030 (0.635) (0.762) 0.100 (2.54) 0.050 (1.27) Document Number: 88954 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000