4646

SENSITRON
SEMICONDUCTOR
SHD120022
SHD120022P
TECHNICAL DATA
DATA SHEET 4646, REV. A
HERMETIC SCHOTTKY RECTIFIER
Very Low Forward Voltage Drop
Features:
•
•
•
•
•
•
Soft Reverse Recovery at Low and High Temperature
Very Low Forward Voltage Drop
Low Power Loss, High Efficiency
High Surge Capacity
Guard Ring for Enhanced Durability and Long Term Reliability
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Peak Inverse Voltage
Max. Average Forward Current
Symbol
VRWM
IF(AV)
Max. Average Forward Current
IF(AV)
Max. Peak One Cycle NonRepetitive Surge Current
Non-Repetitive Avalanche Energy
IFSM
Repetitive Avalanche Current
IAR
Maximum Thermal Resistance
RθJC
Max. Junction Temperature
Max. Storage Temperature
TJ
Tstg
EAS
Condition
50% duty cycle, rectangular
wave form (Single)
50% duty cycle, rectangular
wave form (Common Cathode)
8.3 ms, half Sine wave
(per leg)
TJ = 25 °C, IAS = 3.0 A,
L = 4.4 mH (per leg)
IAS decay linearly to 0 in 1 μs
ƒ limited by TJ max VA=1.5VR
(Single)
(Common Cathode)
-
Max.
45
3.0
Units
V
A
6
A
55
A
20
mJ
3.0
A
2.97
5.95
°C/W
-65 to +175
-65 to +175
°C
°C
Max.
0.69
0.62
0.08
Units
V
V
mA
3
mA
160
pF
Electrical Characteristics
Characteristics
Max. Forward Voltage Drop
(per leg)
Max. Reverse Current
Symbol
VF1
VF2
IR1
(per leg)
IR2
Max. Junction Capacitance
(per leg)
CT
Condition
@ 3.0A, Pulse, TJ = 25 °C
@ 3.0A, Pulse, TJ = 125 °C
@VR = 45V, Pulse,
TJ = 25 °C
@VR = 45V, Pulse,
TJ = 125 °C
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
©2004 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681
PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • [email protected]
SHD120022
SHD120022P
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4646, REV. A
SINGLE
LCC-5
Mechanical Dimensions: in Inches / mm
1
2
3
COMMON CATHODE
2
PINOUT TABLE
DEVICE TYPE
SINGLE RECTIFIER
COMMON CATHODE - P
PIN 1
CATHODE
COMMON CATHODE
PIN 2
ANODE
ANODE 1
PIN 3
ANODE
ANODE 2
Note: The Vf curves shown are for the SD60SB45 unpackaged die only.
Typical Forward Characteristics
Typical Reverse Characteristics
1
10
Instantaneous Reverse Current - IR (mA)
101
150 °C
100
125 °C
10-1
100 °C
75 °C
10-2
50 °C
10-3
25 °C
-4
125 °C
10
100
0
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage Drop - VF (V)
10
20
30
40
Reverse Voltage - VR (V)
50
Typical Junction Capacitance
25 °C
0.8
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
175 °C
175 °C
150
125
100
75
50
0
10
20
30
Reverse Voltage - VR (V)
40
©2004 Sensitron Semiconductor • 221 West Industry Court • Deer Park, NY 11729-4681
PHONE (631) 586-7600 • FAX (631) 242-9798 • www.sensitron.com • [email protected]
50
1
3