MMBZxAL series Low capacitance unidirectional double ESD protection diodes Rev. 02 — 10 December 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. The devices are designed for ESD and transient overvoltage protection of up to two signal lines. Table 1. Product overview Type number MMBZ5V6AL Package Configuration NXP JEDEC SOT23 TO-236AB dual common anode MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 1.2 Features Unidirectional ESD protection of two lines Bidirectional ESD protection of one line Low diode capacitance: Cd ≤ 280 pF Rated peak pulse power: PPPM = 40 W Ultra low leakage current: IRM = 5 nA ESD protection up to 30 kV (contact discharge) IEC 61000-4-2; level 4 (ESD) IEC 61643-321 AEC-Q101 qualified 1.3 Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Automotive electronic control units Portable electronics MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V MMBZ6V8AL - - 4.5 V Per diode VRWM Cd reverse standoff voltage MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.5 V MMBZ15VAL - - 12 V MMBZ18VAL - - 14.5 V MMBZ20VAL - - 17 V MMBZ27VAL - - 22 V MMBZ33VAL - - 26 V MMBZ5V6AL - 210 280 pF MMBZ6V2AL - 175 230 pF MMBZ6V8AL - 150 200 pF diode capacitance f = 1 MHz; VR = 0 V MMBZ9V1AL - 155 200 pF MMBZ10VAL - 130 170 pF MMBZ12VAL - 110 140 pF MMBZ15VAL - 85 105 pF MMBZ18VAL - 70 90 pF MMBZ20VAL - 65 80 pF MMBZ27VAL - 48 60 pF MMBZ33VAL - 45 55 pF 2. Pinning information Table 3. Pinning Pin Description 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode Simplified outline Graphic symbol 3 1 3 2 1 2 006aaa154 MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 2 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 3. Ordering information Table 4. Ordering information Type number MMBZ5V6AL Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL 4. Marking Table 5. Marking codes Type number Marking code[1] MMBZ5V6AL RR* MMBZ6V2AL RS* MMBZ6V8AL RT* MMBZ9V1AL RU* MMBZ10VAL RV* MMBZ12VAL *H1 MMBZ15VAL *H2 MMBZ18VAL *H3 MMBZ20VAL *H4 MMBZ27VAL *H5 MMBZ33VAL *H6 [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 3 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit rated peak pulse power tp = 10/1000 μs - 24 W - 40 W MMBZ5V6AL - 3 A MMBZ6V2AL - 2.76 A MMBZ6V8AL - 2.5 A MMBZ9V1AL - 1.7 A MMBZ10VAL - 1.7 A MMBZ12VAL - 2.35 A MMBZ15VAL - 1.9 A MMBZ18VAL - 1.6 A MMBZ20VAL - 1.4 A MMBZ27VAL - 1 A MMBZ33VAL - 0.87 A Per diode PPPM [1][2] MMBZ5V6AL MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL IPPM rated peak pulse current tp = 10/1000 μs [1][2] Per device Ptot total power dissipation Tamb ≤ 25 °C MMBZxAL series [3] - 265 mW MMBZ5V6AL [4] - 290 mW [4] - 360 mW MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 4 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] In accordance with IEC 61643-321 (10/1000 μs current waveform). [2] Measured from pin 1 or 2 to pin 3. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit [1][2] - 30 kV [2] - 2 kV Per diode VESD machine model [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 or 2 to pin 3. Table 8. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 8 kV MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 5 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 001aaa631 IPP 006aab319 150 100 % 90 % IPP (%) 100 % IPP; 10 μs 100 50 % IPP; 1000 μs 50 10 % 0 1.0 2.0 3.0 30 ns 4.0 tp (ms) Fig 1. t tr = 0.7 ns to 1 ns 0 10/1000 μs pulse waveform according to IEC 61643-321 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 6 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 6. Thermal characteristics Table 9. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per device Rth(j-a) thermal resistance from junction in free air to ambient MMBZxAL series [1] - - 460 K/W MMBZ5V6AL [2] - - 420 K/W [2] - - 340 K/W - - 150 K/W - - 50 K/W MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL Rth(j-sp) thermal resistance from junction to solder point MMBZ5V6AL [3] MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Measured from pin 1 or 2 to pin 3. MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 7 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 7. Characteristics Table 10. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA - - 0.9 V VRWM reverse standoff voltage MMBZ5V6AL - - 3 V MMBZ6V2AL - - 3 V Per diode IRM VBR MMBZ6V8AL - - 4.5 V MMBZ9V1AL - - 6 V MMBZ10VAL - - 6.5 V MMBZ12VAL - - 8.5 V MMBZ15VAL - - 12 V MMBZ18VAL - - 14.5 V MMBZ20VAL - - 17 V MMBZ27VAL - - 22 V MMBZ33VAL - - 26 V reverse leakage current MMBZ5V6AL VRWM = 3 V - 0.24 5 μA MMBZ6V2AL VRWM = 3 V - 5 200 nA MMBZ6V8AL VRWM = 4.5 V - 10 300 nA MMBZ9V1AL VRWM = 6 V - 5 100 nA MMBZ10VAL VRWM = 6.5 V - 1 20 nA MMBZ12VAL VRWM = 8.5 V - 0.1 5 nA MMBZ15VAL VRWM = 12 V - 0.1 5 nA MMBZ18VAL VRWM = 14.5 V - 0.1 5 nA MMBZ20VAL VRWM = 17 V - 0.1 5 nA MMBZ27VAL VRWM = 22 V - 0.1 5 nA MMBZ33VAL VRWM = 26 V - 0.1 5 nA MMBZ5V6AL IR = 20 mA 5.32 5.6 5.88 V MMBZ6V2AL IR = 1 mA 5.89 6.2 6.51 V MMBZ6V8AL IR = 1 mA 6.46 6.8 7.14 V MMBZ9V1AL IR = 1 mA 8.65 9.1 9.56 V MMBZ10VAL IR = 1 mA 9.5 10 10.5 V MMBZ12VAL IR = 1 mA 11.4 12 12.6 V MMBZ15VAL IR = 1 mA 14.25 15 15.75 V MMBZ18VAL IR = 1 mA 17.1 18 18.9 V MMBZ20VAL IR = 1 mA 19 20 21 V MMBZ27VAL IR = 1 mA 25.65 27 28.35 V MMBZ33VAL IR = 1 mA 31.35 33 34.65 V breakdown voltage MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 8 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes Table 10. Characteristics …continued Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Cd diode capacitance f = 1 MHz; VR = 0 V VCL SZ Min Typ Max Unit MMBZ5V6AL - 210 280 pF MMBZ6V2AL - 175 230 pF MMBZ6V8AL - 150 200 pF MMBZ9V1AL - 155 200 pF MMBZ10VAL - 130 170 pF MMBZ12VAL - 110 140 pF MMBZ15VAL - 85 105 pF MMBZ18VAL - 70 90 pF MMBZ20VAL - 65 80 pF MMBZ27VAL - 48 60 pF MMBZ33VAL - 45 55 pF - - 8 V [1][2] clamping voltage MMBZ5V6AL IPPM = 3 A MMBZ6V2AL IPPM = 2.76 A - - 8.7 V MMBZ6V8AL IPPM = 2.5 A - - 9.6 V MMBZ9V1AL IPPM = 1.7 A - - 14 V MMBZ10VAL IPPM = 1.7 A - - 14.2 V MMBZ12VAL IPPM = 2.35 A - - 17 V MMBZ15VAL IPPM = 1.9 A - - 21 V MMBZ18VAL IPPM = 1.6 A - - 25 V MMBZ20VAL IPPM = 1.4 A - - 28 V MMBZ27VAL IPPM = 1 A - - 40 V MMBZ33VAL IPPM = 0.87 A - - 46 V MMBZ5V6AL IZ = 20 mA - 1.7 - mV/K MMBZ6V2AL IZ = 1 mA - 2.1 - mV/K MMBZ6V8AL IZ = 1 mA - 3.2 - mV/K MMBZ9V1AL IZ = 1 mA - 5.4 - mV/K MMBZ10VAL IZ = 1 mA - 6.5 - mV/K MMBZ12VAL IZ = 1 mA - 8.2 - mV/K MMBZ15VAL IZ = 1 mA - 11 - mV/K MMBZ18VAL IZ = 1 mA - 14 - mV/K MMBZ20VAL IZ = 1 mA - 15.8 - mV/K MMBZ27VAL IZ = 1 mA - 23 - mV/K MMBZ33VAL IZ = 1 mA - 29.8 - mV/K temperature coefficient [1] In accordance with IEC 61643-321(10/1000 μs current waveform). [2] Measured from pin 1 or 2 to pin 3. MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 9 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 006aab320 103 006aab321 1.2 PPPM PPPM (W) PPPM(25°C) 102 0.8 10 0.4 1 10−2 10−1 1 102 10 0 103 tp (ms) 0 50 100 150 200 Tj (°C) Tamb = 25 °C unidirectional and bidirectional Fig 3. Rated peak pulse power as a function of exponential pulse duration (rectangular waveform); typical values 006aab839 250 Cd (pF) Fig 4. Relative variation of rated peak pulse power as a function of junction temperature; typical values 006aab840 150 Cd (pF) 200 100 (1) 150 (3) (1) (4) (2) 50 (5) (2) 100 (6) (3) (2) (3) (4) 50 0 0 2 4 6 0 5 VR (V) 10 15 VR (V) f = 1 MHz; Tamb = 25 °C f = 1 MHz; Tamb = 25 °C (1) MMBZ5V6AL: unidirectional (1) MMBZ10VAL: unidirectional (2) MMBZ5V6AL: bidirectional (2) MMBZ10VAL: bidirectional (3) MMBZ6V8AL: unidirectional (3) MMBZ15VAL: unidirectional (4) MMBZ6V8AL: bidirectional (4) MMBZ15VAL: bidirectional (5) MMBZ27VAL: unidirectional (6) MMBZ27VAL: bidirectional Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Diode capacitance as a function of reverse voltage; typical values MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 10 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes IRM (nA) 006aab841 103 (1) 102 10 (2) 1 (3) 10−1 10−2 (4) 10−3 10−4 −75 −25 25 75 125 175 Tamb (°C) (1) MMBZ5V6AL: VRWM = 3 V (2) MMBZ6V8AL: VRWM = 4.5 V (3) MMBZ9V1AL: VRWM = 6 V (4) MMBZ27VAL: VRWM = 22 V Fig 7. Reverse leakage current as a function of ambient temperature; typical values I IPPM IPP −VCL −VBR −VRWM V −IRM −IR − −VCL −VBR −VRWM IR IRM −IRM −IR + P-N − −IPP −IPPM Fig 8. + −IPP −IPPM 006aab324 V-I characteristics for a unidirectional ESD protection diode Fig 9. 006aab325 V-I characteristics for a bidirectional ESD protection diode MMBZXAL_SER_2 Product data sheet VRWM VBR VCL © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 11 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 8. Application information The MMBZxAL series is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL provide a surge capability of 24 W per line, the MMBZ12VAL, MMBZ15VAL, MMBZ18VAL, MMBZ20VAL, MMBZ27VAL and MMBZ33VAL provide a surge capability of 40 W per line, for a 10/1000 μs waveform. line 1 to be protected line 1 to be protected line 2 to be protected MMBZxAL GND unidirectional protection of two lines MMBZxAL GND bidirectional protection of one line 006aab842 Fig 10. Typical application: ESD and transient voltage protection of data lines Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the MMBZxAL series as close to the input terminal or connector as possible. 2. The path length between the MMBZxAL series and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all PCB conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 12 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 10. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 11. Package outline SOT23 (TO-236AB) 11. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number MMBZ5V6AL Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 MMBZ6V2AL MMBZ6V8AL MMBZ9V1AL MMBZ10VAL MMBZ12VAL MMBZ15VAL MMBZ18VAL MMBZ20VAL MMBZ27VAL MMBZ33VAL [1] For further information and the availability of packing methods, see Section 15. MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 13 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 12. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 12. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 13. Wave soldering footprint SOT23 (TO-236AB) MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 14 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 13. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes MMBZXAL_SER_2 20091210 Product data sheet - MMBZXVAL_SER_1 Modifications: MMBZXVAL_SER_1 • Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and MMBZ10VAL added • Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG, MMBZ27VAL/DG, MMBZ33VAL/DG removed • • • • Figure 5 and 7: updated Figure 6: added Figure 10: updated Section 14 “Legal information”: updated 20080901 Product data sheet MMBZXAL_SER_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 15 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] MMBZXAL_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 10 December 2009 16 of 17 MMBZxAL series NXP Semiconductors Low capacitance unidirectional double ESD protection diodes 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 3 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Application information. . . . . . . . . . . . . . . . . . 12 Test information . . . . . . . . . . . . . . . . . . . . . . . . 12 Quality information . . . . . . . . . . . . . . . . . . . . . 12 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13 Packing information . . . . . . . . . . . . . . . . . . . . 13 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 15 Legal information. . . . . . . . . . . . . . . . . . . . . . . 16 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 16 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 10 December 2009 Document identifier: MMBZXAL_SER_2