Product Brief 900V CoolMOS™ C3

Product Brief
900V CoolMOS™ C3
High Voltage Power MOSFET Using Charge Compensation Principle
Infineon continues to deliver energy-saving CoolMOS™ power MOSFETs with
extremely low static and dynamic power losses. Based on the device concept of charge
compensation the on-resistance (RDS(on)) can be drastically reduced by a factor of four
or more per package type, compared to other 900V conventional MOSFETs.
900V CoolMOS™ C3 also offers a very low figure-of-merit on-resistance times gate
charge (RDS(on)*Qg) of 34W*nC, translating into low conduction, driving and switching
losses. The energy stored in the output capacitance is reduced by a factor of two
compared to conventional 900V MOSFETs, which reduces power losses during hardswitched turn-on.
The 900V CoolMOS™ C3 is well suited for high efficiency switch mode power supplies,
industry and renewable energies applications. Change of design criteria is possible
as designers can allow a higher DC-link or input voltage. High power applications
which uses 3-phase PFC and PWM stages with DC-link voltages up to 750V will benefit
from 900V CoolMOS™ C3 offering lowest on-resistance in TO-247 package. The high
blocking voltage in combination with low conduction losses and switching losses
also open up for new design criteria in quasi-resonance flyback and single transistor
forward topologies, used in LCD-TV and PC silverboxes for example. Higher efficiency,
reduced system costs, and high power density are pointing the way towards future
system development.
Key Features
„„ Lowest
conduction losses and
reduced paralleling of MOSFETs
„„ Low gate charge
–– lowest driving and switching losses
„„ Low
energy stored in the output
capacitance
–– lowest switching losses in especially
hard-switched applications
Key Benefits
Increased efficiency and switching frequency by replacing IGBTs in 3-phase
„„ PFC and PWM Stages
„„ High flyback voltage can be allowed
in flyback designs
„„
Applications
„„ Photovoltaic
converters
„„ 3-phase PFC and PWM
„„ PC silverbox using single transistor
forward topology
„„ LCD power supplies using quasi
resonant flyback topologies
„„ Lamp ballasts in comfort lighting,
streetlighting and greenhouses
www.infineon.com/c3
Product Brief
900V CoolMOS™ C3
High Voltage Power MOSFET Using Charge Compensation Principle
Comparison of max RDS(on) for best-in-class 900V devices in TO-220 & TO-247 Packages
8
Other 900V MOSFET 1
Other 900V MOSFET 2
Other 900V MOSFET 3
900V CoolMOS™ C3
7
1.8
5
1.6
1.4
4
1.2
RDS(on) [Ω]
RDS(on) [Ω]
6
3
2
1.0
0.8
0.6
0. 4
1
0. 2
0
DPAK
TO-220
0
TO-247
TO-220
TO-247
900V CoolMOS™ C3 Product Portfolio
RDS(on)
[mΩ]
TO-220
TO-220
FullPAK
TO-247
DPAK
TO-252
IPD90R1K2C3
I²PAK
TO-262
1200
IPP90R1K2C3
IPA90R1K2C3
IPW90R1K2C3
1000
IPP90R1K0C3
IPA90R1K0C3
IPW90R1K0C3
IPI90R1K0C3 1)
800
IPP90R800C3
IPA90R800C3 1)
IPW90R800C3 1)
IPI90R800C3 1)
IPI90R1K2C3
500
IPP90R500C3
IPA90R500C3
IPW90R500C3
IPI90R500C3
340
IPP90R340C3
IPA90R340C3
IPW90R340C3
IPI90R340C3
120
D²PAK
TO-263
IPB90R340C3
IPW90R120C3
1) Will be discontinued
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2014 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B152-H9161-G2-X-7600-DB2014-0023
Date: 07 / 2014
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property
rights of any third party.
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For further information on technology, delivery terms and
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Technologies Office (www.infineon.com).
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