MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Features GaN depletion mode HEMT microwave transistor Common source configuration Broadband Class AB operation Thermally enhanced Cu/Mo/Cu package RoHS Compliant +50V Typical Operation MTTF of 114 years (Channel Temperature < 200°C) Applications General purpose for pulsed or CW applications Commercial Wireless Infrastructure - WCDMA, LTE, WIMAX Civilian and Military Radar Military and Commercial Communications Public Radio Industrial, Scientific and Medical SATCOM Instrumentation DTV Product Description Typical CW RF Performance The MAGX-001220-100L00 is a gold metalized Gallium Nitride (GaN) on Silicon Carbide RF power transistor suitable for a variety of RF power amplifier applications. Using state of the art wafer fabrication processes, these high performance transistors provide high gain, efficiency, bandwidth, ruggedness over multiple octave bandwidths for today’s demanding application needs. The MAGX001220-100L00 is constructed using a thermally enhanced Cu/Mo/Cu flanged ceramic package which provides excellent thermal performance. High breakdown voltages allow for reliable and stable operation in extreme mismatched load conditions unparalleled with older semiconductor technologies. Freq. (MHz) Pin Pout (W Peak) (W Peak) Gain (dB) Id-Pk (A) Eff (%) 1200 4 120 14.8 4.0 60 1400 4 120 14.8 4.6 52 1600 4 130 15.1 4.9 53 1800 4 120 14.8 4.4 54 2000 4 120 14.8 4.5 53 Ordering Information MAGX-001220-100L00 MAGX-001220-1SB1PPR 100W GaN Power Transistor Evaluation Board 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Absolute Maximum Ratings Table (1, 2, 3) Supply Voltage (Vdd) +65V Supply Voltage (Vgg) -8 to 0V Supply Current (Id1) 9A Pk Input Power (Pin) +38 dBm Absolute Max. Junction/Channel Temp 200 ºC 105W 114 years Pulsed Power Dissipation (Pavg) at 85 ºC MTTF (TJ<200°C) Thermal Resistance, (Tchannel = 200 ºC) VDD = 50V, IDQ = 100mA, Pout = 100W 300us Pulse / 10% Duty 0.84 ºC/W Operating Temp Storage Temp ESD Min. - Machine Model (MM) -40 to +95C -65 to +150C 50 V ESD Min. - Human Body Model (HBM) >250 V MSL Level MSL1 (1) Operation of this device above any one of these parameters may cause permanent damage. (2) Channel temperature directly affects a device's MTTF. Channel temperature should be kept as low as possible to maximize lifetime. (3) For saturated performance it recommended that the sum of (3*Vdd + abs(Vgg)) <175 Parameter Test Conditions Symbol Min Typ Max Units DC CHARACTERISTICS Drain-Source Leakage Current VGS = -8V, VDS = 175V IDS - - 6 mA Gate Threshold Voltage VDS = 5V, ID = 15.0mA VGS (th) -5 -3 -2 V Forward Transconductance VDS = 5V, ID = 3.5A GM 2.5 - - S DYNAMIC CHARACTERISTICS Input Capacitance Not applicable—Input internally matched N/A N/A N/A N/A pF Output Capacitance VDS = 50V, VGS = -8V, F = 1MHz COSS - 30.3 35 pF Feedback Capacitance VDS = 50V, VGS = -8V, F = 1MHz CRSS - 2.8 5.4 pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Symbol Min Typ Max Units RF FUNCTIONAL TESTS Vdd=50V, Idq=500mA (pulsed), F=1.2—2.0 GHz, Pulse=300us, Duty=10% Output Power Pin = 4W Peak, 0.4W Ave Power Gain POUT 100 110 - W Peak Pout = 100W Peak, 10W Ave GP 14.0 14.8 - dB Drain Efficiency Pin = 4W Peak, 0.4W Ave ηD 50 55 - % Load Mismatch Stability Pin = 4W Peak, 0.4W Ave VSWR-S 5:1 - - - Load Mismatch Tolerance Pin = 4W Peak, 0.4W Ave VSWR-T 10:1 - - - Test Fixture Impedance Zif F (MHz) ZIF (Ω) ZOF (Ω) 1200 3.82 - j2.85 4.17 - j1.79 4.69 - j2.15 3.53 - j2.79 2.19 - j1.90 8.6 + j1.1 6.9 + j0.16 6.8 + j0.7 6.1 - j0.6 3.2 + j0.39 1400 1600 1800 2000 INPUT NETWORK OUTPUT NETWORK Zof 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 RF Power Transfer Curve 160 140 Pout(W) 120 100 80 1.2GHz 60 1.6GHz 2.0GHz 40 20 0 0 1 2 3 4 5 6 Pin(W) Return Loss vs. Frequency 18 0 17 -2 16 -4 15 14 13 1.2GHz 12 1.6GHz 11 2.0GHz 10 0 20 40 60 80 100 120 140 160 Pout(W) Return Loss (dB) Gain(dB) RF Power Transfer Curve Power Gain vs. Output Power 3W 4W 5W -6 -8 -10 -12 -14 -16 1 1.2 1.4 1.6 1.8 2 2.2 Freq(GHz) 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Test Fixture Circuit Dimensions Note: A .dwg circuit drawing is available upon request Test Fixture Assembly 5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. MAGX-001220-100L00 GaN HEMT Power Transistor 100W Peak, 1.2 - 2.0 GHz Production V1 19 Sept 11 Outline Drawings CORRECT DEVICE BIAS SEQUENCING TURNING THE DEVICE ON TURNING THE DEVICE OFF 1. Set VGS to the pinch-off (VP), typically -5V 2. Turn on VDS to nominal voltage (50V) 3. Increase VGS until the IDS current is reached 4. Apply RF power to desired level 1. Turn the RF power off 2. Decrease VGS down to VP 3. Decrease VDS down to 0V 4. Turn off VGS 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.