High-reliability discrete products and engineering services since 1977 C147A-C147PB SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS . Part number Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak reverse voltage VDRM1 VRRM1 VRSM1 Units TJ = -40° to 125°C TJ = -40°C to 125°C TJ = 125°C C147A 100 100 150 V C147B 200 200 300 V C147C 300 300 400 V C147D 400 400 500 V C147E 500 500 600 V C147M 600 600 720 V C147S 700 700 840 V C147N 800 800 960 V C147T 900 900 1080 V C147P 1000 1000 1200 V C147PA 1100 1100 1320 V C147PB 1200 1200 1440 V 1: Pulse width: half sine wave waveform, 10 msec. Rating Symbol Value Unit RMS on-state current (All conduction angles) IT(RMS) 63 A Average on-state current IT(AV) Figures 2 and 3 di/dt 100 200 A/µs Critical rate of rise of on-state current (non-repetitive) Switching from 1200V Switching from 600V Peak one cycle surge (non-repetitive) on-state current 60Hz 50Hz ITSM 1000 910 A Fusing Times ≥ 8.3ms Times ≥ 1.5ms I2t 4150 2850 A2s Peak gate power dissipation for 150µs PGM 100 W Average gate power dissipation PG(AV) 2 W Storage temperature Tstg -40 to 150 °C Operating temperature TJ -40 to 125 °C 3-4 N-m Maximum stud torque di/dt ratings for conditions of VDRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time. Rev. 20130116 C147A-C147PB SILICON CONTROLLED RECTIFIERS High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Units Test Condition TJ = -40 to 125°C VDRM = VRRM = Peak off-state and reverse current C147A C147B C147C C147D C147E C147M C147S C147N C147T C147P C147PA C147PB IDRM, IRRM DC gate trigger current IGT DC gate trigger voltage VGT Peak on-state voltage Holding current Critical rate of rise of off-state voltage (higher values may cause device switching) Thermal resistance Typical turn-off time VTM - 12 12 12 10 10 10 10 9 8 7 6.5 6 - 150 - 300 - 3 - 3.5 0.25 - - 3 - 250 IH 200 RӨJC tq mA mAdc - 0.35 125 TC = 25°C, VD = 12Vdc, RL = 12ohms TC = -40°C, VD = 12Vdc, RL = 12ohms TC = 25°C, VD = 12Vdc, RL = 12ohms Vdc TC = -40°C, VD = 12Vdc, Rl = 12ohms TC = 125°C, rated VDRM, RL = 1000ohms V TC = 25°C, ITM = 500A(pk), 1ms wide pulse, duty cycle ≤ 1% mAdc TC = 25°C anode supply = 24Vdc, gate supply = 10V/20ohms. Initial forward pulse = 2A, 0.1 ms to 10 ms wide V/µs TC = 125°C, rated VDRM, using linear exponential rising waveform, gate open circuited Exponential dv/dt = VDRM / т) (0.632) °C/W Junction to case - dv/dt 100 Volts peak 200 Volts peak 300 Volts peak 400 Volts peak 500 Volts peak 600 Volts peak 700 Volts peak 800 Volts peak 900 Volts peak 1000 Volts peak 1100 Volts peak 1200 Volts peak µsec 1) 2) 3) 4) 5) TJ = 125°C ITM = 150A, peak VR = 50V, min VDRM (reapplied) Rate-of-rise of reapplied off state voltage = 20V/µsec (linear) 6) Commutation di/dt = 5A/µsec 7) Repetition rate = 1PPS 8) Gate bias during turn-off interval = 0V, 100Ω Rev. 20130116 High-reliability discrete products and engineering services since 1977 C147A-C147PB SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case TO-65 Marking Alpha-numeric Pin out See below Rev. 20130116 High-reliability discrete products and engineering services since 1977 C147A-C147PB SILICON CONTROLLED RECTIFIERS Rev. 20130116 High-reliability discrete products and engineering services since 1977 C147A-C147PB SILICON CONTROLLED RECTIFIERS Rev. 20130116