C147A C147PB.aspx?ext=

High-reliability discrete products
and engineering services since 1977
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
.
Part number
Repetitive peak off-state
voltage
Repetitive peak
reverse voltage
Non-repetitive peak
reverse voltage
VDRM1
VRRM1
VRSM1
Units
TJ = -40° to 125°C
TJ = -40°C to 125°C
TJ = 125°C
C147A
100
100
150
V
C147B
200
200
300
V
C147C
300
300
400
V
C147D
400
400
500
V
C147E
500
500
600
V
C147M
600
600
720
V
C147S
700
700
840
V
C147N
800
800
960
V
C147T
900
900
1080
V
C147P
1000
1000
1200
V
C147PA
1100
1100
1320
V
C147PB
1200
1200
1440
V
1: Pulse width: half sine wave waveform, 10 msec.
Rating
Symbol
Value
Unit
RMS on-state current
(All conduction angles)
IT(RMS)
63
A
Average on-state current
IT(AV)
Figures 2 and 3
di/dt
100
200
A/µs
Critical rate of rise of on-state current (non-repetitive)
Switching from 1200V
Switching from 600V
Peak one cycle surge (non-repetitive) on-state current
60Hz
50Hz
ITSM
1000
910
A
Fusing
Times ≥ 8.3ms
Times ≥ 1.5ms
I2t
4150
2850
A2s
Peak gate power dissipation for 150µs
PGM
100
W
Average gate power dissipation
PG(AV)
2
W
Storage temperature
Tstg
-40 to 150
°C
Operating temperature
TJ
-40 to 125
°C
3-4
N-m
Maximum stud torque
di/dt ratings for conditions of VDRM stated above; 20V, 20Ω gate trigger source with 0.5µsec short circuit trigger current rise time.
Rev. 20130116
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Units
Test Condition
TJ = -40 to 125°C
VDRM = VRRM =
Peak off-state and reverse current
C147A
C147B
C147C
C147D
C147E
C147M
C147S
C147N
C147T
C147P
C147PA
C147PB
IDRM,
IRRM
DC gate trigger current
IGT
DC gate trigger voltage
VGT
Peak on-state voltage
Holding current
Critical rate of rise of off-state voltage
(higher values may cause device switching)
Thermal resistance
Typical turn-off time
VTM
-
12
12
12
10
10
10
10
9
8
7
6.5
6
-
150
-
300
-
3
-
3.5
0.25
-
-
3
-
250
IH
200
RӨJC
tq
mA
mAdc
-
0.35
125
TC = 25°C, VD = 12Vdc, RL = 12ohms
TC = -40°C, VD = 12Vdc, RL = 12ohms
TC = 25°C, VD = 12Vdc, RL = 12ohms
Vdc
TC = -40°C, VD = 12Vdc, Rl = 12ohms
TC = 125°C, rated VDRM, RL = 1000ohms
V
TC = 25°C, ITM = 500A(pk), 1ms wide pulse, duty
cycle ≤ 1%
mAdc
TC = 25°C anode supply = 24Vdc, gate supply =
10V/20ohms.
Initial forward pulse = 2A, 0.1 ms to 10 ms
wide
V/µs
TC = 125°C, rated VDRM, using linear
exponential rising waveform, gate open
circuited
Exponential dv/dt = VDRM / т) (0.632)
°C/W
Junction to case
-
dv/dt
100 Volts peak
200 Volts peak
300 Volts peak
400 Volts peak
500 Volts peak
600 Volts peak
700 Volts peak
800 Volts peak
900 Volts peak
1000 Volts peak
1100 Volts peak
1200 Volts peak
µsec
1)
2)
3)
4)
5)
TJ = 125°C
ITM = 150A, peak
VR = 50V, min
VDRM (reapplied)
Rate-of-rise of reapplied off state
voltage = 20V/µsec (linear)
6) Commutation di/dt = 5A/µsec
7) Repetition rate = 1PPS
8) Gate bias during turn-off
interval = 0V, 100Ω
Rev. 20130116
High-reliability discrete products
and engineering services since 1977
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
MECHANICAL CHARACTERISTICS
Case
TO-65
Marking
Alpha-numeric
Pin out
See below
Rev. 20130116
High-reliability discrete products
and engineering services since 1977
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
Rev. 20130116
High-reliability discrete products
and engineering services since 1977
C147A-C147PB
SILICON CONTROLLED RECTIFIERS
Rev. 20130116