SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDH12G65C5 Final Datasheet Rev. 2.2, 2012-12-10 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 IDH12G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 27 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit 650 V VDC QC; VR=400V 18 nC EC; VR=400V 4.1 µJ IF @ TC < 140°C 12 A Table 2 Pin 1 C Pin Definition Pin 2 Pin 3 A n.a. Type / ordering Code IDH12G65C5 Package PG-TO220-2 Marking D1265C5 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Related links www.infineon.com/sic Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Table of contents Table of Contents 1 Description.......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Simplified Forward Characteristics Model ...................................................................................... 8 7 Package outlines ................................................................................................................................ 9 8 Revision History ............................................................................................................................... 10 Final Data Sheet 3 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Maximum ratings 2 Table 3 Parameter Maximum ratings Maximum ratings Symbol Continuous forward current IF Surge non-repetitive forward current, IF,SM sine halfwave Non-repetitive peak forward current i²t value IF,max Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque VRRM 3 ∫ i²dt dv/dt Ptot Tj;Tstg Min. – – – – – – – – – -55 – Values Typ. – – – – – – – – – – – Unit Max. 12 97 83 505 47 35 650 100 104 175 70 A A²s V V/ns W °C Ncm Note/Test Condition TC < 140°C, D=1 TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Tj = 25°C VR=0..480 V TC = 25°C M3 screws Thermal characteristics Table 4 Parameter Thermal characteristics TO-220-2 Symbol Min. Thermal resistance, junction-case RthJC – Thermal resistance, junctionRthJA – ambient Soldering temperature, Tsold wavesoldering only allowed at leads Final Data Sheet – 4 Values Typ. 0.9 Unit Max. 1.5 – 62 – 260 Note/Test Condition K/W leaded °C 1.6mm (0.063 in.) from case for 10 s Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Electrical characteristics 4 Table 5 Parameter Electrical characteristics Static characteristics Symbol DC blocking voltage Diode forward voltage VDC VF Reverse current IR Table 6 Parameter Min. 650 – – – – – Values Typ. – 1.5 1.8 0.65 0.16 2.4 Unit Max. – 1.7 2.1 190 68 1350 Min. Values Typ. Max. – 18 – – – 360 48 47 V µA Note/Test Condition IR= 0.19 mA, Tj=25°C IF= 12 A, Tj=25°C IF= 12 A, Tj=150°C VR=650 V, Tj=25°C VR=600 V, Tj=25°C VR=650 V, Tj=150°C AC characteristics Symbol Total capacitive charge Qc Total Capacitance C Final Data Sheet 5 Unit nC – – – pF Note/Test Condition VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C VR=1 V, f=1 MHz VR=300 V, f=1 MHz VR=600 V, f=1 MHz Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Diode forward current 120 120 0.1 0.3 100 100 0.5 0.7 IF[A] Ptot[W] 1 80 80 60 60 40 40 20 20 0 0 25 50 75 100 125 150 25 175 50 75 TC[°C] 100 125 150 175 TC[°C] Ptot=f(TC); RthJC,max IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle Table 8 Typical forward characteristics Typical forward characteristics in surge current 120 -55°C 25°C 20 100 -55°C 100°C 80 150°C IF [A] IF [A] 15 175°C 10 25°C 100°C 60 40 5 150°C 20 175°C 0 0 0.5 1 1.5 VF [V] 2 2.5 0 3 0 IF=f(VF); tp=200 µs; parameter: Tj Final Data Sheet 1 2 3 VF [V] 4 5 6 IF=f(VF); tp=200 µs; parameter: Tj 6 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage 1.E-5 20 18 16 1.E-6 12 175°C IR [A] QC[nC] 14 10 1.E-7 8 150°C 6 1.E-8 4 100°C 2 0 100 25°C 300 500 700 1.E-9 100 900 200 300 400 -55°C 500 600 VR [V] dIF/dt [A/µs] QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 500 450 1 400 0.5 300 0.2 250 C [pF] Zth,jc [K/W] 350 0.1 0.1 0.05 0.02 200 150 0.01 100 single pulse 50 0.01 1.E-06 0 1.E-03 1.E+00 0 10 100 1000 VR [V] tp [s] Zth,jc=f(tP); parameter: D=tP/T Final Data Sheet 1 C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Electrical characteristics diagrams Table 11 Typ. capacitance stored energy 12 10 EC [µJ] 8 6 4 2 0 0 200 400 600 VR [V] EC=f(VR) 6 Simplified Forward Characteristics Model Table 12 Equivalent forward current curve Mathematical Equation V F VTH RDIFF I F VTH T j 0.001 T j 1.04 V RDIFF T j 1.07 10-6 T j 1.07 10- 4 T j 0.039 IF [A] 2 1/R V diff th VF [V] VF=f(IF) Final Data Sheet Tj in °C; -55°C < Tj < 175°C; IF < 24 A 8 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Package outlines 7 Figure 1 Package outlines Outlines TO-220, dimensions in mm/inches Final Data Sheet 9 Rev. 2.2, 2012-12-10 5th Generation thinQ!TM SiC Schottky Diode IDH12G65C5 Revision History 8 Revision History 5th Generation thinQ!TM SiC Schottky Diode Revision History: 2012-09-10, Rev. 2.2 Previous Revision: Revision Subjects (major changes since last version) 2.0 Release of the final datasheet. 2.1 Reverse current values, maximum diode forward voltage. 2.2 Reverse current values, tested avalanche current, simplified calculation model We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2012-12-10 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). 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