SENSITRON SEMICONDUCTOR SHD126412 TECHNICAL DATA DATA SHEET 4784, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Junction Temperature Max. Storage Temperature Thermal Resistance (per leg) Symbol VRWM IF(AV) IFSM TJ Tstg RJC Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave - Max. 45 16 Units V A 75 A -65 to +175 -65 to +175 1.5 C C C/W Max. 0.56 0.46 3 Units V V mA 140 mA 1600 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 16A, Pulse, TJ = 25 C @ 16A, Pulse, TJ = 125 C @VR = 45V, Pulse, TJ = 25 C @VR = 45V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 2004 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126412 TECHNICAL DATA DATA SHEET 4784, REV. B Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) 1 2 .035 (0.89 .025 0.63) 3 Places .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) 3 .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 DEVICE TYPE SINGLE RECTIFIER PIN 1 CATHODE PIN 2 ANODE PIN 3 ANODE Typical Forward Characteristics Typical Reverse Characteristics Instantaneous Reverse Current - I R (mA) 102 10 1 125 °C 150 °C 125 °C 101 100 °C 100 75 °C 10-1 50 °C 10-2 25 °C 10-3 0 25 °C 100 Junction Capacitance - CT (pF) Instantaneous Forward Current - I F (A) 150 °C 102 10-1 0.0 0.2 0.4 0.6 Forw ard Voltage Drop - V F (V) 0.8 10 20 30 40 Reverse Voltage - VR (V) 50 Typical Junction Capacitance 1500 1400 1300 1200 1100 1000 900 800 700 600 500 0 10 20 30 40 Reverse Voltage - VR (V) 2004 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] 50