SiC Silicon Carbide Diode 5 t h Generation thinQ! T M 650V SiC Schottky Diode IDK05G65C5 Final Data Sheet Rev. 2.0, 2013-07-20 Power Management & Multimarket 5th Generation thinQ!™ SiC Schottky Diode 1 IDK05G65C5 Description ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range. 1 2 Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 11 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications Switch mode power supply Power factor correction Solar inverter Uninterruptible power supply Table 1 Key Performance Parameters Parameter Value Unit 650 V VDC QC; VR=400V 8 nC EC; VR=400V 1.8 µJ 5 A IF @ TC < 145°C Table 2 Pin 1 C Pin Definition Pin 2 Pin 3 A n.a. Type / ordering Code IDK05G65C5 Package PG-TO263-2 Marking D0565C5 Related links www.infineon.com/sic 1) J-STD20 and JESD22 2) All devices tested under avalanche conditions for a time periode of 10ms Final Data Sheet 2 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Table of contents Table of Contents 1 Description.......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Simplified Forward Characteristics Model ...................................................................................... 8 7 Package outlines ................................................................................................................................ 9 8 Revision History ............................................................................................................................... 10 Final Data Sheet 3 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Maximum ratings 2 Table 3 Parameter Maximum ratings Maximum ratings Symbol Continuous forward current IF Surge non-repetitive forward current, IF,SM sine halfwave Non-repetitive peak forward current i²t value IF,max Repetitive peak reverse voltage Diode dv/dt ruggedness Power dissipation Operating and storage temperature Mounting torque VRRM 3 ∫ i²dt dv/dt Ptot Tj;Tstg Min. – – – – – – – – – -55 – Values Typ. – – – – – – – – – – – Unit Max. 5 46 41 251 10.4 8.4 650 100 55 175 60 A A²s V V/ns W °C Ncm Note/Test Condition TC < 145°C, D=1 TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms Tj = 25°C VR=0..480 V TC = 25°C M2.5 screws Thermal characteristics Table 4 Parameter Thermal characteristics TO-263-2 Symbol Min. Thermal resistance, junction-case RthJC – Thermal resistance, junction– RthJA ambient 1) Values Typ. 1.7 Unit Max. 2.7 – 62 K/W SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 35 Soldering temperature, wave- & reflow soldering allowed Tsold – – 260 Note/Test Condition °C Reflow MSL 1 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection, PCB is vertical without air stream cooling. Final Data Sheet 4 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Electrical characteristics 4 Table 5 Parameter Electrical characteristics Static characteristics Symbol DC blocking voltage Diode forward voltage VDC VF Reverse current IR Table 6 Parameter Min. 650 – – – – – Values Typ. – 1.5 1.8 0.25 0.06 1 Unit Max. – 1.8 2.2 830 220 3200 Min. Values Typ. Max. – 8 – – – 160 20 20 V µA Note/Test Condition IR= 0.83 mA, Tj=25°C IF= 5 A, Tj=25°C IF= 5 A, Tj=150°C VR=650 V, Tj=25°C VR=600 V, Tj=25°C VR=650 V, Tj=150°C AC characteristics Symbol Total capacitive charge Qc Total Capacitance C Final Data Sheet 5 Unit nC – – – pF Note/Test Condition VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. VR=1 V, f=1 MHz VR=300 V, f=1 MHz VR=600 V, f=1 MHz Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Maximal diode forward current 60 60 0.1 0.3 50 50 0.5 0.7 IF[A] Ptot[W] 1 40 40 30 30 20 20 10 10 0 0 25 50 75 100 125 150 25 175 50 75 100 TC[°C] 150 175 TC[°C] Ptot=f(TC); RthJC,max IF=f(TC); RthJC,max; Tj≤175°C; parameter D=duty cycle Table 8 Typical forward characteristics 10 Typical forward characteristics in surge current 50 -55°C 9 45 25°C 8 40 100°C 7 -55°C 35 6 25°C 30 150°C 5 IF [A] IF [A] 125 175°C 4 100°C 25 20 3 15 2 10 1 150°C 5 0 0 0.5 1 1.5 VF [V] 2 2.5 3 0 IF=f(VF); tp=200 µs; parameter: Tj Final Data Sheet 175°C 0 1 2 3 VF [V] 4 5 6 IF=f(VF); tp=200 µs; parameter: Tj 6 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope1) Typ. reverse current vs. reverse voltage 1.E-5 9 8 1.E-6 7 QC[nC] 6 IR [A] 5 4 1.E-7 175°C 3 150°C 1.E-8 2 100°C 1 0 100 25°C 300 500 700 1.E-9 100 900 200 300 400 -55°C 500 600 VR [V] dIF/dt [A/µs] QC=f(diF/dt); Tj=150°C; VR=400 V; IF≤IF,max IR=f(VR); parameter: Tj; 1) Only capacitive charge, guaranteed by design. Table 10 Max. transient thermal impedance Typ. capacitance vs. reverse voltage 200 180 160 1 0.5 120 0.2 100 C [pF] Zth,jc [K/W] 140 0.1 0.05 0.1 0.02 80 60 0.01 40 single pulse 20 0.01 1.E-06 0 1.E-03 1.E+00 0 10 100 1000 VR [V] tp [s] Zth,jc=f(tP); parameter: D=tP/T; Final Data Sheet 1 C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Electrical characteristics diagrams Table 11 Typ. capacitance stored energy 5 4.5 4 EC[µJ] 3.5 3 2.5 2 1.5 1 0.5 0 0 200 400 600 VR [V] EC=f(VR) 6 Simplified Forward Characteristics Model Table 12 Equivalent forward current curve Mathematical Equation V F VTH RDIFF I F VTH T j 0.001 T j 1.04 V RDIFF T j 2.57 10 -6 T j 2.57 10 -4 T j 0.093 IF [A] 2 1/R V diff th VF [V] VF=f(IF) Final Data Sheet Tj in °C; -55°C < Tj < 175°C; IF < 10 A 8 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Package outlines 7 Figure 1 Package outlines Outlines TO-263, dimensions in mm/inches Final Data Sheet 9 Rev. 2.0, 2013-07-20 5th Generation thinQ!TM SiC Schottky Diode IDK05G65C5 Revision History 8 Revision History 5th Generation thinQ!TM SiC Schottky Diode Revision History: 2013-07-20, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version) 2.0 Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? 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Final Data Sheet 10 Rev. 2.0, 2013-07-20 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG