CD214C-R350 R31000

PL
IA
N
T
Features
CO
M
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*R
oH
S
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RoHS compliant*
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
CD214C-R350~R31000 Glass Passivated Rectifiers
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components. Bourns offers Glass Passivated Rectifiers for rectification applications, in compact chip DO-214AB (SMC) size
format, which offer PCB real estate savings and are considerably smaller than most competitive parts. The Glass Passivated Rectifier Diodes
offer a forward current of 3.0 A with a choice of repetitive peak reverse voltage of 50 V up to 1000 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Maximum Repetitive
Peak Reverse Voltage
Maximum RMS Voltage
CD214C-
Unit
R350
R3100
R3200
R3400
R3600
R3800
R31000
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
Maximum DC
Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Max. Average Forward
Rectified Current1
I(AV)
3.0
A
DC Reverse Current @
Rated DC Blocking Voltage (@
TJ = 25 °C)
IR
10.0
µA
DC Reverse Current @
Rated DC Blocking Voltage (@
TJ = 125 °C)
IR
250.0
µA
Typical Junction Capacitance2
CJ
40
pF
Maximum Instantaneous
Forward Voltage @ 3 A
VF
1.15
V
Typical Thermal Resistance3
RθJL
10
°C/W
Peak forward surge current
8.3 ms single half sine-wave
superimposed on rated load
(JEDEC Method)
IFSM
100
A
Notes:
1 See Forward Derating Curve.
2 Measured @ 1 MHz and applied reverse voltage of 4.0 V.
3 Thermal resistance from junction to lead.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature Range
Storage Temperature Range
Symbol
CD214C-R350~R31000
Unit
TJ
-65 to +175
°C
TSTG
-65 to +175
°C
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-R350~R31000 Glass Passivated Rectifiers
Recommended Pad Layout
Product Dimensions
This is an RoHS compliant product using 100 % Sn termination. It
is a molded plastic package. A cathode band indicates the polarity. The package weighs approximately 0.21 g. The package and
dimensions are shown below.
5.60
(0.220)
6.60 - 7.11
(0.260 - 0.280)
4.00
(0.157)
2.92 - 3.18
(0.115 - 0.125)
5.59 - 6.22
(0.220 - 0.240)
2.30
(0.091)
DIMENSIONS:
MM
(INCHES)
How To Order
CD 214C - R 3 50
2.01 - 2.62
(0.080 - 0.103)
0.05 - 0.20
(0.002 - 0.008)
0.76 - 1.52
(0.03 - 0.06)
7.75 - 8.13
(0.305 - 0.320)
DIMENSIONS:
MM
(INCHES)
0.15 - 0.31
(0.006 - 0.012)
Common Code
Chip Diode
Package
• 214C = SMC/DO-214AB
Model
R = Glass Pasivated Rectifiers
Forward Current I(AV)
3=3A
Reverse Voltage
50 =
50 V
100 = 100 V
200 = 200 V
400 = 400 V
600 = 600 V
800 = 800 V
1000 = 1000 V
Typical Part Marking
CD214C-R350 ........................................................................... R3A
CD214C-R3100 ......................................................................... R3B
CD214C-R3200 ......................................................................... R3D
CD214C-R3400 ......................................................................... R3G
CD214C-R3600 ......................................................................... R3J
CD214C-R3800 ......................................................................... 3R3K
CD214C-R31000 ....................................................................... R3M
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214B-R350~R31000 Glass Passivated Rectifiers
Packaging Information
This product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
Trailer
A
C
Device
Leader
....... .......
....... .......
.......
....... ....... .......
End
10 pitches (min.)
10 pitches (min.)
W1
Start
DIMENSIONS:
MM
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA standard RS-481-A
and specifications shown here.
Item
Symbol
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
Quantity per Reel
—
(SMC) DO-214AB
7.22 ±0.10
(0.284 - 0.004)
8.11 ±0.10
(0.319 - 0.004)
2.36 ±0.10
(0.093 - 0.004)
1.55 ±0.05
(0.061 - 0.002)
330
(12.992)
50.0
Min.
(1.969)
13.0 ±0.20
(0.512 - 0.008)
1.75 ±0.10
(0.069 - 0.004)
7.50 ±0.05
(0.295 - 0.002)
4.00 ±0.10
(0.157 - 0.004)
4.00 ±0.10
(0.157 - 0.004)
2.00 ±0.05
(0.079 - 0.002)
0.30 ±0.10
(0.012 - 0.004)
16.00 ±0.20
(0.630 - 0.008)
22.4
Max.
(0.882)
3,000
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-R350~R31000 Glass Passivated Rectifiers
Rating and Characteristic Curves
Forward Current Derating Curve
Maximum Non-Repetitive Surge Current
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
5.0
4.0
3.0
2.0
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
1.0
0
25
50
75
100
125
150
100
80
60
40
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
20
0
175
1
2
5
Lead Temperature (°C)
Typical Forward Characteristics
20
50
100
Typical Reverse Characteristics
1000
Instantaneous Reverse Leakage Current (mA)
10.0
Instantaneous Forward Current (Amps)
10
Number of Cycles at 60 Hz
1.0
0.1
Pulsewidth: 300 µs
TJ = 25 °C
100
TJ = 125 °C
10
1.0
TJ = 25 °C
0.1
0.01
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (Volts)
1.6
1.8
0
20
40
60
80
100
120
Percent of Rated Peak Reverse Voltage (%)
REV. 09/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
140