PTVS3-xxxC Series

PL
IA
N
T
Features
These models are obsolete and not
recommended for new designs.
Model PTVS3-058C-TH and
PTVS3-076C-TH are possible alternatives.
CO
M
■ 3 kA, 8/20 µs surge capability
*R
oH
S
■ Low clamping voltage under surge
■ Bidirectional TVS
■ UL Recognized
Applications
■ AC line protection
■ High power DC bus protection
PTVS3-xxxC Series High Current TVS Diodes
General Information
Agency Approval
The PTVS3-xxxC range of high current bidirectional TVS diodes is
designed for use in AC line protection and high power DC bus
clamping applications. These devices offer bidirectional port protection
from 58 volts to 430 volts.
Description
UL
File Number: E313168
The devices are RoHS* and UL compliant while also meeting IEC
61000-4-5 8/20 µs current surge requirements.
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Rating
Symbol
Value
E
T
E
L
O
S
B
O
VWM
58
66
76
380
430
V
IPPM
3
kA
Operating Junction Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TS
-55 to +150
°C
260
°C
Repetitive Standoff Voltage
PTVS3-058C
PTVS3-066C
PTVS3-076C
PTVS3-380C
PTVS3-430C
Unit
Peak Current Rating per 8/20 µs IEC 61000-4-5
Lead Temperature, Soldering (10 s)
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
ID Standby Current
V(BR) Breakdown Voltage
VC Clamping Voltage
Test Conditions
IBR = 10 mA
PTVS3-058C
PTVS3-066C
PTVS3-076C
PTVS3-380C
PTVS3-430C
IPP = 3 kA
PTVS3-058C
PTVS3-066C
PTVS3-076C
PTVS3-380C
PTVS3-430C
F = 10 kHz,
Vd = 1 Vrms
PTVS3-058C
PTVS3-066C
PTVS3-076C
PTVS3-380C
PTVS3-430C
V(BR) Temperature Coefficient
C Capacitance
Min.
Typ.
Max.
Unit
10
µA
66
77
92
420
470
70
82
95
443
490
V
85
100
110
510
560
100
120
130
570
620
V
VD = VWM
64
72
85
401
440
0.1
2.0
1.7
1.5
0.7
0.6
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
%/°C
2.3
2.2
2.0
1.2
1.0
nF
3312 - 2 mm
SMD
Trimming
Potentiometer
PTVS3-xxxC
Series
High
Current TVS
Diodes
Product Dimensions
The product is epoxy encapsulated per UL Class 94V-0 with Ag plated leads solderable per MIL-STD-750, Method 2026.
The package dimensions and part marking are shown below.
G
Dim.
F
PTVS3058C
A
B
D
H
C
D
E
F
G
E
A
PTVS3PTVS3076C
380C
24.15 ± 0.72
(0.950 ± 0.028)
2.40
Typ.
(0.094)
15.0
Min.
(0.59)
10.5
Max.
(0.413)
1.25 ± 0.05
(0.049 ± 0.002)
10.5
Max.
(0.413)
5.0
6.0
17.0
(0.67)
(0.24)
(0.20)
Max.
Max.
Max.
6.60
Max.
(0.26)
E
T
E
L
O
S
B
O
C
B
PTVS3066C
5.0
(0.20)
Max.
H
DIMENSIONS:
Typical Part Marking
PTVS3-058C .............................................................................3058
PTVS3-066C .............................................................................3066
PTVS3-076C .............................................................................3076
PTVS3-380C .............................................................................3380
PTVS3-430C .............................................................................3430
Application
A typical application for Power TVS products includes AC power line
primary protection.
PTVS3430C
17.0
(0.67)
Max.
MM
(INCHES)
How to Order
PTVS 3 - xxx C
Series
PTVS = Power TVS High Current Diode
Peak Current Rating
3 = 3 kA
Repetitive Standoff Voltage
058 = 58 V
066 = 66 V
076 = 76 V
380 = 380 V
430 = 430 V
Suffix
C = Bidirectional Device
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312
- 2 mmSeries
SMD High
Trimming
Potentiometer
PTVS3-xxxC
Current
TVS Diodes
Performance Graphs
V-I Characteristic
Typical VBR vs. Junction Temperature
16
VI
Characteristic
+i
14
IPPM
VC
V (BR)
IT
ID
V WM
-v
+v
ID
IT
V WM
V (BR)
VC
Percent of VBR Change
Quadrant I
12
10
8
6
25 °C
4
2
E
T
E
L
O
S
B
O
0
-4
-6
-8
-40 -20
0
20
40
60
80 100 120 140 160
IPPM
Quadrant III
-i
Typical Peak Power Derating
120
Percent of Rated Value
Junction Temperature (TJ) - °C
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
PTVS3-xxxC Series High Current TVS Diodes
Performance Graphs (Continued)
Surge Response (1.2/50, 8/20 Surge) - PTVS3-058C
120
3
120
2.5
100
2.5
100
Voltage
1.5
60
1
2
Current (kA)
80
2
Voltage (V)
3
20
0.5
1
40
0.5
20
0
0
-20
-0.5
0
4
8
12
16
60
1.5
E
T
E
L
O
S
B
O
40
20
24
28
32
36
-0.5
0
40
8
4
12
16
20
24
-20
28
32
36
40
Time (µs)
Surge Response - PTVS3-380C
Surge Response (1.2/50, 8/20 Surge) - PTVS3-380C
3.5
3.0
3.0
700
600
Current
500
2.5
2.5
2.0
Current (A)
Current (kA)
0
0
Time (µs)
3.5
80
Voltage
1.5
1.0
Voltage (V)
Current
Current
Current (kA)
140
3.5
140
T
2.0
400
Voltage
1.5
300
1.0
200
0.5
100
Voltage (V)
3.5
Surge Response (1.2/50, 8/20 Surge) - PTVS3-076C
0.5
0
0
0
-0.5
-100
0
-0.5
0
200
400
10
5
15
20
600
25
30
35
40
Time (µs)
Voltage (V)
Surge Response - PTVS3-430C
Surge Response (1.2/50, 8/20 Surge) - PTVS3-430C
3.5
3.5
3.0
3.0
600
2.0
1.5
2.5
500
2.0
400
1.5
300
Voltage
1.0
200
1.0
0.5
100
0.5
0
0
-0.5
0
-100
0
-0.5
0
100
200
300
400
500
600
Voltage (V)
Current (kA)
Current
2.5
Current (kA)
700
10
20
30
40
50
Time (µs)
REV. 01/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.