Preliminary Data Sheet NX6411GH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 DESCRIPTION The NX6411GH is a 1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATION • 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network) FEATURES • Optical output power Po = 14.0 mW • Low threshold current lth = 10 mA • Differential efficiency ηd = 0.3 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 10 mm The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 Page 1 of 6 NX6411GH PACKAGE DIMENSIONS (UNIT: mm) *2 (φ 5.6) *2 (φ 4.3) *2 1.0±0.1 BOTTOM VIEW 1 110°±2° (0.3) *2 (φ 3.75) 2 4 3 *2 (0.3) *1 Focal Point Δ x = ±200 μ m MAX. Δ y = ±200 μ m MAX. 10±0.7 PIN CONNECTIONS 15.0±1.0 1.2±0.1 3.97±0.15 <R> Chapter Title 1 (CASE) LD 4 2 PD 3 4– φ 0.45 φ 2.0 P.C.D *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 Page 2 of 6 NX6411GH Chapter Title ORDERING INFORMATION Part Number NX6411GH Package Pin Connections 1 4-pin CAN with aspherical lens cap LD 4 2 PD 3 Remarks 1. The color of lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 Page 3 of 6 NX6411GH Chapter Title ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 20 mW Forward Current of LD IF 200 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10.0 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % ELECTRO-OPTICAL CHARACTERISTICS (TC = −40 to +85°C, unless otherwise specified) Parameter <R> Symbol Optical Output Power Po CW Operating Current Iop Po = 14.0 mW Operating Voltage Vop Po = 14.0 mW Threshold Current Ith TC = 25°C <R> MIN. TYP. MAX. 14.0 5 Unit mW 140 mA 1.1 1.6 V 10 15 mA 3 40 Differential Efficiency ηd Po = 14.0 mW 0.10 0.6 W/A Peak Emission Wavelength λp CW, Po = 14.0 mW 1 480 1 500 nm Side Mode Suppression Ratio <R> Conditions SMSR Po = 14.0 mW Rise Time tr Ib = Ith, 10-90% 0.1 0.2 ns Fall Time tf Ib = Ith, 90-10% 0.1 0.2 ns Monitor Current Im VR = 1.5 V, Po = 14.0 mW 500 1 500 μA Monitor Dark Current ID VR = 5 V 100 nA γ Im = const. (@ Po = 14.0 mW, TC = 25°C) 1.0 dB *1 Tracking Error *1 30 200 dB −1.0 Tracking Error: γ Po γ = 10 log (mW) Po [dB] 14.0 TC = 25°C 14.0 TC = –40 to +85°C Po 0 R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 Im Im (mA) Page 4 of 6 NX6411GH Chapter Title REFERENCE Document Name Opto-Electronics Devices Pamphlet *1 *1 Document No. PX10160E Published by the former NEC Electronics Corporation. R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 Page 5 of 6 NX6411GH Chapter Title SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0041EJ0500 Rev.5.00 Jun 07, 2011 Page 6 of 6 Revision History Rev. − 5.00 Date Mar 2010 Jun 07, 2011 NX6411GH Data Sheet Description Summary Page − p.2 p.4 Previous No. : PL10644EJ04V0DS Modification of PACKAGE DIMENSIONS ELECTRO-OPTICAL CHARACTERISTICS Peak Emission Wavelength: (MIN.) 1 481 -> 1 480, (MAX.) 1 499 -> 1 500 Monitor Current: (MIN.) 250 -> 200 Tracking Error: (MIN.) −0.8 -> −1.0, (MAX.) 0.8 -> 1.0 All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. 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