RENESAS NX6411GH

Preliminary Data Sheet
NX6411GH
LASER DIODE
1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
R08DS0041EJ0500
Rev.5.00
Jun 07, 2011
DESCRIPTION
The NX6411GH is a 1 490 nm Multiple Quantum Well (MQW) structured
Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
APPLICATION
• 2.5 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)
FEATURES
• Optical output power
Po = 14.0 mW
• Low threshold current
lth = 10 mA
• Differential efficiency
ηd = 0.3 W/A
• Wide operating temperature range
TC = −40 to +85°C
• InGaAs monitor PIN-PD
• CAN package
φ 5.6 mm
• Focal point
10 mm
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R08DS0041EJ0500 Rev.5.00
Jun 07, 2011
Page 1 of 6
NX6411GH
PACKAGE DIMENSIONS (UNIT: mm)
*2
(φ 5.6)
*2
(φ 4.3)
*2
1.0±0.1
BOTTOM VIEW
1
110°±2°
(0.3)
*2
(φ 3.75)
2
4
3
*2
(0.3)
*1
Focal Point
Δ x = ±200 μ m MAX.
Δ y = ±200 μ m MAX.
10±0.7
PIN CONNECTIONS
15.0±1.0 1.2±0.1 3.97±0.15
<R>
Chapter Title
1 (CASE)
LD
4
2
PD
3
4– φ 0.45
φ 2.0
P.C.D
*1 Focal Point: A point to get maximum optical output power from fiber.
*2 ( ) indicates nominal dimension.
R08DS0041EJ0500 Rev.5.00
Jun 07, 2011
Page 2 of 6
NX6411GH
Chapter Title
ORDERING INFORMATION
Part Number
NX6411GH
Package
Pin Connections
1
4-pin CAN with aspherical lens cap
LD
4
2
PD
3
Remarks 1. The color of lens cap might be observed differently.
2. The hermetic test will be performed as AQL 1.0%.
R08DS0041EJ0500 Rev.5.00
Jun 07, 2011
Page 3 of 6
NX6411GH
Chapter Title
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Optical Output Power
Po
20
mW
Forward Current of LD
IF
200
mA
Reverse Voltage of LD
VR
2.0
V
Forward Current of PD
IF
10.0
mA
Reverse Voltage of PD
VR
15
V
Operating Case Temperature
TC
−40 to +85
°C
Storage Temperature
Tstg
−40 to +85
°C
Lead Soldering Temperature
Tsld
350 (3 sec.)
°C
Relative Humidity (noncondensing)
RH
85
%
ELECTRO-OPTICAL CHARACTERISTICS (TC = −40 to +85°C, unless otherwise specified)
Parameter
<R>
Symbol
Optical Output Power
Po
CW
Operating Current
Iop
Po = 14.0 mW
Operating Voltage
Vop
Po = 14.0 mW
Threshold Current
Ith
TC = 25°C
<R>
MIN.
TYP.
MAX.
14.0
5
Unit
mW
140
mA
1.1
1.6
V
10
15
mA
3
40
Differential Efficiency
ηd
Po = 14.0 mW
0.10
0.6
W/A
Peak Emission Wavelength
λp
CW, Po = 14.0 mW
1 480
1 500
nm
Side Mode Suppression Ratio
<R>
Conditions
SMSR
Po = 14.0 mW
Rise Time
tr
Ib = Ith, 10-90%
0.1
0.2
ns
Fall Time
tf
Ib = Ith, 90-10%
0.1
0.2
ns
Monitor Current
Im
VR = 1.5 V, Po = 14.0 mW
500
1 500
μA
Monitor Dark Current
ID
VR = 5 V
100
nA
γ
Im = const. (@ Po = 14.0 mW, TC = 25°C)
1.0
dB
*1
Tracking Error
*1
30
200
dB
−1.0
Tracking Error: γ
Po
γ = 10 log
(mW)
Po
[dB]
14.0
TC = 25°C
14.0
TC = –40 to +85°C
Po
0
R08DS0041EJ0500 Rev.5.00
Jun 07, 2011
Im
Im
(mA)
Page 4 of 6
NX6411GH
Chapter Title
REFERENCE
Document Name
Opto-Electronics Devices Pamphlet
*1
*1
Document No.
PX10160E
Published by the former NEC Electronics Corporation.
R08DS0041EJ0500 Rev.5.00
Jun 07, 2011
Page 5 of 6
NX6411GH
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
DANGER
SEMICONDUCTOR LASER
INVISIBLE LASER RADIATION
AVOID DIRECT EXPOSURE TO BEAM
OUTPUT POWER
mW MAX
WAVELENGTH
nm
CLASS lllb LASER PRODUCT
Warning
Laser Beam
AVOID EXPOSURE-Invisible
Laser Radiation is emitted from
this aperture
A laser beam is emitted from this diode during operation.
The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of
eyesight.
• Do not look directly into the laser beam.
• Avoid exposure to the laser beam, any reflected or collimated beam.
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0041EJ0500 Rev.5.00
Jun 07, 2011
Page 6 of 6
Revision History
Rev.
−
5.00
Date
Mar 2010
Jun 07, 2011
NX6411GH Data Sheet
Description
Summary
Page
−
p.2
p.4
Previous No. : PL10644EJ04V0DS
Modification of PACKAGE DIMENSIONS
ELECTRO-OPTICAL CHARACTERISTICS
Peak Emission Wavelength: (MIN.) 1 481 -> 1 480, (MAX.) 1 499 -> 1 500
Monitor Current: (MIN.) 250 -> 200
Tracking Error: (MIN.) −0.8 -> −1.0, (MAX.) 0.8 -> 1.0
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