Data Sheet

NTB0102-Q100
Dual supply translating transceiver; auto direction sensing;
3-state
Rev. 1 — 18 April 2013
Product data sheet
1. General description
The NTB0102-Q100 is a 2-bit, dual supply translating transceiver with auto direction
sensing, that enables bidirectional voltage level translation. It features two 2-bit
input-output ports (An and Bn), one output enable input (OE) and two supply pins (VCC(A)
and VCC(B)). VCC(A) can be supplied with any voltage between 1.2 V and 3.6 V. VCC(B) can
be supplied with any voltage between 1.65 V and 5.5 V. This flexibility makes the device
suitable for translating between any of the low voltage nodes (1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3
V and 5.0 V).
Pins An and OE are referenced to VCC(A) and pins Bn are referenced to VCC(B). A LOW
level at pin OE causes the outputs to assume a high-impedance OFF-state. This device is
fully specified for partial power-down applications using IOFF. The IOFF circuitry disables
the output, preventing the damaging backflow current through the device when it is
powered down.
This product has been qualified to the Automotive Electronics Council (AEC) standard
Q100 (Grade 1) and is suitable for use in automotive applications.
2. Features and benefits
 Automotive product qualification in accordance with AEC-Q100 (Grade 1)
 Specified from 40 C to +85 C and from 40 C to +125 C
 Wide supply voltage range:
 VCC(A): 1.2 V to 3.6 V and VCC(B): 1.65 V to 5.5 V
 IOFF circuitry provides partial Power-down mode operation
 Inputs accept voltages up to 5.5 V
 ESD protection:
 MIL-STD-883, method 3015 Class 2 exceeds 2500 V for A port
 MIL-STD-883, method 3015 Class 3B exceeds 15000 V for B port
 HBM JESD22-A114E Class 2 exceeds 2500 V for A port
 HBM JESD22-A114E Class 3B exceeds 15000 V for B port
 MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )
 Latch-up performance exceeds 100 mA per JESD 78B Class II
 Multiple package options
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
3. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range
Name
Description
Version
NTB0102DP-Q100
40 C to +125 C
TSSOP8
plastic thin shrink small outline package; 8 leads;
body width 3 mm; lead length 0.5 mm
SOT505-2
NTB0102GD-Q100
40 C to +125 C
XSON8
plastic extremely thin small outline package; no leads; SOT996-2
8 terminals; body 3  2  0.5 mm
4. Marking
Table 2.
Marking
Type number
Marking code[1]
NTB0102DP-Q100
t02
NTB0102GD-Q100
t02
[1]
The pin 1 indicator is located on the lower left corner of the device, below the marking code.
5. Functional diagram
OE
A2
6
4
1
A1
B2
5
8
VCC(A)
B1
VCC(B)
001aal914
Fig 1.
Logic symbol
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
6. Pinning information
6.1 Pinning
17%4
%
%
*1'
9&&%
9&&$
2(
$
$
%
%
*1'
9&&%
9&&$
2(
$
$
DDD
7UDQVSDUHQWWRSYLHZ
DDD
Fig 2.
Pin configuration SOT505-2 (TSSOP8)
Fig 3.
Pin configuration SOT996-2 (XSON8)
6.2 Pin description
Table 3.
Pin description
Symbol
Pin
Description
B2, B1
1, 8
data input or output (referenced to VCC(B))
GND
2
ground (0 V)
VCC(A)
3
supply voltage A
A2, A1
4, 5
data input or output (referenced to VCC(A))
OE
6
output enable input (active HIGH; referenced to VCC(A))
VCC(B)
7
supply voltage B
n.c.
-
not connected
7. Functional description
Table 4.
Function table[1]
Supply voltage
Input
Input/output
VCC(A)
VCC(B)
OE
An
Bn
1.2 V to VCC(B)
1.65 V to 5.5 V
L
Z
Z
1.2 V to VCC(B)
1.65 V to 5.5 V
H
input or output
output or input
GND[2]
GND[2]
X
Z
Z
[1]
H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state.
[2]
When either VCC(A) or VCC(B) is at GND level, the device goes into Power-down mode.
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
Parameter
VCC(A)
supply voltage A
VCC(B)
supply voltage B
VI
input voltage
VO
output voltage
Conditions
Active mode
Min
Max
Unit
0.5
+6.5
V
0.5
+6.5
V
[1]
0.5
+6.5
V
[1][2][3]
0.5
VCCO + 0.5
V
[1]
0.5
+6.5
V
Power-down or 3-state mode
IIK
input clamping current
VI < 0 V
50
-
mA
IOK
output clamping current
VO < 0 V
50
-
mA
-
50
mA
-
100
mA
[2]
IO
output current
VO = 0 V to VCCO
ICC
supply current
ICC(A) or ICC(B)
IGND
ground current
100
-
mA
Tstg
storage temperature
65
+150
C
-
250
mW
total power dissipation
Ptot
[1]
Tamb = 40 C to +125 C
The minimum input and minimum output voltage ratings may be exceeded if the input and output current ratings are observed.
[2]
VCCO is the supply voltage associated with the output.
[3]
VCCO + 0.5 V should not exceed 6.5 V.
[4]
[4]
For TSSOP8 package: above 55 C the value of Ptot derates linearly with 2.5 mW/K.
For XSON8 packages: above 118 C the value of Ptot derates linearly with 7.8 mW/K.
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
9. Recommended operating conditions
Table 6.
Recommended operating conditions[1][2]
Symbol
Parameter
VCC(A)
Conditions
Min
Max
Unit
supply voltage A
1.2
3.6
V
VCC(B)
supply voltage B
1.65
5.5
V
VI
input voltage
0
5.5
V
VO
output voltage
A port
0
3.6
V
B port
0
5.5
V
40
+125
C
-
40
ns/V
Power-down or 3-state mode;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
Tamb
ambient temperature
t/V
input transition rise and fall rate
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
The A and B sides of an unused I/O pair must be held in the same state, both at VCCI or both at GND.
[2]
VCC(A) must be less than or equal to VCC(B).
10. Static characteristics
Table 7.
Typical static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VOH
HIGH-level
output voltage
A port; VCC(A) = 1.2 V; IO = 20 A
-
1.1
-
V
VOL
LOW-level
output voltage
A port; VCC(A) = 1.2 V; IO = 20 A
-
0.09
-
V
II
input leakage
current
OE input; VI = 0 V to 3.6 V; VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
-
1
A
IOZ
OFF-state output A or B port; VO = 0 V to VCCO; VCC(A) = 1.2 V to 3.6 V;
current
VCC(B) = 1.65 V to 5.5 V
-
-
1
A
IOFF
power-off
leakage current
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
-
-
1
A
B port; VI or VO = 0 V to 5.5 V;
VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V
-
-
1
A
ICC(A); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V
-
0.05
-
A
ICC(B); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V
-
3.3
-
A
ICC(A) + ICC(B); VCC(A) = 1.2 V; VCC(B) = 1.65 V to 5.5 V
-
3.5
-
A
supply current
ICC
VI = 0 V or VCCI; IO = 0 A
[1]
[2]
CI
input
capacitance
OE input; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
1.0
-
pF
CI/O
input/output
capacitance
A port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
4.0
-
pF
B port; VCC(A) = 1.2 V to 3.6 V; VCC(B) = 1.65 V to 5.5 V
-
7.5
-
pF
[1]
VCCO is the supply voltage associated with the output.
[2]
VCCI is the supply voltage associated with the input.
NTB0102_Q100
Product data sheet
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NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 8.
Typical supply current
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); Tamb = 25 C.
VCC(A)
VCC(B)
Unit
1.8 V
2.5 V
3.3 V
5.0 V
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
ICC(A)
ICC(B)
1.2 V
10
10
10
10
10
20
10
1050
nA
1.5 V
10
10
10
10
10
10
10
650
nA
1.8 V
10
10
10
10
10
10
10
350
nA
2.5 V
-
-
10
10
10
10
10
40
nA
3.3 V
-
-
-
-
10
10
10
10
nA
Table 9.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
VIH
VIL
VOH
40 C to +85 C
Conditions
Min
Max
Min
Max
0.65VCCI
-
0.65VCCI
-
V
-
0.35VCCI
-
0.35VCCI
V
VCCO  0.4
-
VCCO  0.4
-
V
VCCO  0.4
-
VCCO  0.4
-
V
A port; VCC(A) = 1.4 V to 3.6 V
-
0.4
-
0.4
V
B port; VCC(B) = 1.65 V to 5.5 V
-
0.4
-
0.4
V
-
2
-
5
A
-
2
-
10
A
HIGH-level
input voltage
A or B port and OE input
LOW-level
input voltage
A or B port and OE input
HIGH-level
output voltage
IO = 20 A
LOW-level
output voltage
Unit
[1]
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[2]
A port; VCC(A) = 1.4 V to 3.6 V
B port; VCC(B) = 1.65 V to 5.5 V
VOL
40 C to +125 C
IO = 20 A
[2]
II
input leakage
current
OE input; VI = 0 V to 3.6 V;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
IOZ
OFF-state
output current
A or B port; VO = 0 V or VCCO;
VCC(A) = 1.2 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
IOFF
power-off
leakage
current
A port; VI or VO = 0 V to 3.6 V;
VCC(A) = 0 V; VCC(B) = 0 V to 5.5 V
-
2
-
10
A
B port; VI or VO = 0 V to 5.5 V;
VCC(B) = 0 V; VCC(A) = 0 V to 3.6 V
-
2
-
10
A
NTB0102_Q100
Product data sheet
[2]
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NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 9.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
ICC
supply current
40 C to +85 C
Conditions
40 C to +125 C
Unit
Min
Max
Min
Max
OE = LOW;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
3
-
15
A
OE = HIGH;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
3
-
20
A
VCC(A) = 3.6 V; VCC(B) = 0 V
-
2
-
15
A
VCC(A) = 0 V; VCC(B) = 5.5 V
-
2
-
15
A
OE = LOW;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
5
-
15
A
OE = HIGH;
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
-
5
-
20
A
VCC(A) = 3.6 V; VCC(B) = 0 V
-
2
-
15
A
VCC(A) = 0 V; VCC(B) = 5.5 V
-
2
-
15
A
-
8
-
40
A
VI = 0 V or VCCI; IO = 0 A
[1]
ICC(A)
ICC(B)
ICC(A) + ICC(B)
VCC(A) = 1.4 V to 3.6 V;
VCC(B) = 1.65 V to 5.5 V
[1]
VCCI is the supply voltage associated with the input.
[2]
VCCO is the supply voltage associated with the output.
11. Dynamic characteristics
Table 10. Typical dynamic characteristics for temperature 25 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for waveforms see Figure 4 and Figure 5.
Symbol
Parameter
Conditions
VCC(B)
Unit
1.8 V
2.5 V
3.3 V
5.0 V
A to B
5.9
4.8
4.4
4.2
ns
B to A
5.6
4.8
4.5
4.4
ns
VCC(A) = 1.2 V; Tamb = 25 C
tpd
propagation delay
ten
enable time
OE to A, B
0.5
0.5
0.5
0.5
s
tdis
disable time
OE to A; no external load
[2]
6.9
6.9
6.9
6.9
ns
OE to B; no external load
[2]
9.5
8.6
8.5
8.0
ns
81
69
83
68
ns
OE to A
tt
transition time
NTB0102_Q100
Product data sheet
OE to B
81
69
83
68
ns
A port
4.0
4.0
4.1
4.1
ns
B port
2.6
2.0
1.7
1.4
ns
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 10. Typical dynamic characteristics for temperature 25 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for waveforms see Figure 4 and Figure 5.
Symbol
Parameter
Conditions
tsk(o)
output skew time
between channels
tW
pulse width
data inputs
fdata
data rate
[1]
VCC(B)
Unit
1.8 V
2.5 V
3.3 V
5.0 V
0.2
0.2
0.2
0.2
[3]
ns
15
13
13
13
ns
70
80
80
80
Mbps
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
tt is the same as tTHL and tTLH
[2]
Delay between OE going LOW and when the outputs are actually disabled.
[3]
Skew between any two outputs of the same package switching in the same direction.
Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min
Max
Min
Max
Min
Max
Min
Max
A to B
1.4
12.9
1.2
10.1
1.1
10.0
0.8
9.9
B to A
0.9
14.2
0.7
12.0
0.4
11.7
0.3
13.7 ns
VCC(A) = 1.5 V  0.1 V
tpd
propagation
delay
ns
ten
enable time
OE to A, B
-
1.0
-
1.0
-
1.0
-
1.0
s
tdis
disable time
OE to A; no external load
[2]
1.0
11.9
1.0
11.9
1.0
11.9
1.0
11.9
ns
OE to B; no external load
[2]
1.0
16.9
1.0
15.2
1.0
14.1
1.0
13.8 ns
-
320
-
260
-
260
-
280
ns
OE to A
OE to B
tt
transition
time
A port
B port
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
-
200
-
200
-
200
-
200
ns
0.9
5.1
0.9
5.1
0.9
5.1
0.9
5.1
ns
0.9
4.7
0.6
3.2
0.5
2.5
0.4
2.7
ns
-
0.5
-
0.5
-
0.5
-
0.5
ns
25
-
25
-
25
-
25
-
ns
-
40
-
40
-
40
-
40
Mbps
VCC(A) = 1.8 V  0.15 V
tpd
ten
tdis
tt
propagation
delay
A to B
1.6
11.0
1.4
7.7
1.3
6.8
1.2
6.5
ns
B to A
1.5
12.0
1.3
8.4
1.0
7.6
0.9
7.1
ns
enable time
OE to A, B
disable time
transition
time
NTB0102_Q100
Product data sheet
-
1.0
-
1.0
-
1.0
-
1.0
s
OE to A; no external load
[2]
1.0
11.0
1.0
11.0
1.0
11.0
1.0
11.0
ns
OE to B; no external load
[2]
12.1 ns
1.0
15.4
1.0
13.5
1.0
12.4
1.0
OE to A
-
260
-
230
-
230
-
230
ns
OE to B
-
200
-
200
-
200
-
200
ns
A port
0.8
4.1
0.8
4.1
0.8
4.1
0.8
4.1
ns
B port
0.9
4.7
0.6
3.2
0.5
2.5
0.4
2.7
ns
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© NXP B.V. 2013. All rights reserved.
8 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 11. Dynamic characteristics for temperature range 40 C to +85 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
Min
Max
Min
Max
Min
Max
Min
Max
-
0.5
-
0.5
-
0.5
-
0.5
ns
20
-
17
-
17
-
17
-
ns
-
49
-
60
-
60
-
60
Mbps
VCC(A) = 2.5 V  0.2 V
tpd
ten
propagation
delay
A to B
-
-
1.1
6.3
1.0
5.2
0.9
4.7
ns
B to A
-
-
1.2
6.6
1.1
5.1
0.9
4.4
ns
enable time
OE to A, B
1.0
-
1.0
-
1.0
s
ns
disable time
tdis
transition
time
tt
-
-
-
OE to A; no external load
[2]
-
-
1.0
9.2
1.0
9.2
1.0
9.2
OE to B; no external load
[2]
-
-
1.0
11.9
1.0
10.7
1.0
10.2 ns
OE to A
-
-
-
200
-
200
-
200
ns
OE to B
-
-
-
200
-
200
-
200
ns
A port
-
-
0.7
3.0
0.7
3.0
0.7
3.0
ns
B port
-
-
0.7
3.2
0.5
2.5
0.4
2.7
ns
-
-
-
0.5
-
0.5
-
0.5
ns
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
-
-
12
-
10
-
10
-
-
-
-
85
-
100
-
100
Mbps
ns
ns
VCC(A) = 3.3 V  0.3 V
tpd
propagation
delay
A to B
-
-
-
-
0.9
4.7
0.8
4.0
B to A
-
-
-
-
1.0
4.9
0.9
3.8
ns
ten
enable time
OE to A, B
-
-
-
-
-
1.0
-
1.0
s
tdis
disable time
OE to A; no external load
[2]
-
-
-
-
1.0
9.2
1.0
9.2
ns
OE to B; no external load
[2]
-
-
-
-
1.0
10.1
1.0
9.6
ns
OE to A
-
-
-
-
-
260
-
260
ns
OE to B
-
-
-
-
-
200
-
200
ns
A port
-
-
-
-
0.7
2.5
0.7
2.5
ns
-
-
-
-
0.5
2.5
0.4
2.7
ns
-
-
-
-
-
0.5
-
0.5
ns
-
-
-
-
10
-
10
-
ns
-
-
-
-
-
100
-
100
transition
time
tt
B port
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[1]
[3]
Mbps
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
tt is the same as tTHL and tTLH.
[2]
Delay between OE going LOW and when the outputs are actually disabled.
[3]
Skew between any two outputs of the same package switching in the same direction.
NTB0102_Q100
Product data sheet
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© NXP B.V. 2013. All rights reserved.
9 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1]
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
Min
Max
Min
Max
Min
Max
Min
Max
VCC(A) = 1.5 V  0.1 V
tpd
propagation
delay
A to B
1.4
15.9
1.2
13.1
1.1
13.0
0.8
12.9 ns
B to A
0.9
17.2
0.7
15.0
0.4
14.7
0.3
16.7 ns
ten
enable time
OE to A, B
-
1.0
-
1.0
-
1.0
-
OE to A; no external load
[2]
1.0
12.5
1.0
12.5
1.0
12.5
1.0
12.5 ns
OE to B; no external load
[2]
1.0
18.1
1.0
16.2
1.0
14.9
1.0
14.6 ns
OE to A
-
340
-
280
-
280
-
300
ns
OE to B
-
220
-
220
-
220
-
220
ns
0.9
7.1
0.9
7.1
0.9
7.1
0.9
7.1
ns
0.9
6.5
0.6
5.2
0.5
4.8
0.4
4.7
ns
-
0.5
-
0.5
-
0.5
-
0.5
ns
25
-
25
-
25
-
25
-
ns
-
40
-
40
-
40
-
40
Mbps
ns
tdis
tt
disable time
transition
time
A port
B port
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
1.0
s
VCC(A) = 1.8 V  0.15 V
tpd
ten
tdis
tt
propagation
delay
A to B
1.6
14.0
1.4
10.7
1.3
9.8
1.2
9.5
B to A
1.5
15.0
1.3
11.4
1.0
10.6
0.9
10.1 ns
enable time
OE to A, B
-
1.0
-
1.0
-
1.0
-
disable time
transition
time
1.0
s
1.0
11.5
ns
1.0
12.7 ns
OE to A; no external load
[2]
1.0
11.5
1.0
11.5
1.0
11.5
OE to B; no external load
[2]
1.0
16.5
1.0
14.5
1.0
13.3
OE to A
-
280
-
250
-
250
-
250
ns
OE to B
-
220
-
220
-
220
-
220
ns
A port
0.8
6.2
0.8
6.1
0.8
6.1
0.8
6.1
ns
B port
0.9
5.8
0.6
5.2
0.5
4.8
0.4
4.7
ns
-
0.5
-
0.5
-
0.5
-
0.5
ns
22
-
19
-
19
-
19
-
ns
-
45
-
55
-
55
-
55
Mbps
ns
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[3]
VCC(A) = 2.5 V  0.2 V
tpd
propagation
delay
A to B
-
-
1.1
9.3
1.0
8.2
0.9
7.7
B to A
-
-
1.2
9.6
1.1
8.1
0.9
7.4
ns
ten
enable time
OE to A, B
-
-
-
1.0
-
1.0
-
1.0
s
tdis
disable time
OE to A; no external load
[2]
-
-
1.0
9.6
1.0
9.6
1.0
9.6
ns
OE to B; no external load
[2]
-
-
1.0
12.6
1.0
11.4
1.0
10.8 ns
OE to A
-
-
-
220
-
220
-
220
ns
OE to B
-
-
-
220
-
220
-
220
ns
A port
-
-
0.7
5.0
0.7
5.0
0.7
5.0
ns
B port
-
-
0.7
4.6
0.5
4.8
0.4
4.7
ns
tt
transition
time
NTB0102_Q100
Product data sheet
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© NXP B.V. 2013. All rights reserved.
10 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 12. Dynamic characteristics for temperature range 40 C to +125 C[1] …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 6; for wave forms see Figure 4 and Figure 5.
Symbol Parameter
Conditions
VCC(B)
Unit
1.8 V  0.15 V 2.5 V  0.2 V 3.3 V  0.3 V 5.0 V  0.5 V
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs;
fdata
data rate
[3]
Min
Max
Min
Max
Min
Max
Min
Max
-
-
-
0.5
-
0.5
-
0.5
ns
-
-
14
-
13
-
10
-
ns
-
-
-
75
-
80
-
100
Mbps
VCC(A) = 3.3 V  0.3 V
tpd
ten
propagation
delay
A to B
-
-
-
-
0.9
7.7
0.8
7.0
ns
B to A
-
-
-
-
1.0
7.9
0.9
6.8
ns
enable time
OE to A, B
1.0
-
1.0
s
disable time
tdis
transition
time
tt
-
-
-
-
-
OE to A; no external load
[2]
-
-
-
-
1.0
9.5
1.0
9.5
ns
OE to B; no external load
[2]
-
-
-
-
1.0
10.7
1.0
9.6
ns
OE to A
-
-
-
-
-
280
-
280
ns
OE to B
-
-
-
-
-
220
-
220
ns
A port
-
-
-
-
0.7
4.5
0.7
4.5
ns
B port
-
-
-
-
0.5
4.1
0.4
4.7
ns
-
-
-
-
-
0.5
-
0.5
ns
-
-
-
-
10
-
10
-
ns
-
-
-
-
-
100
-
100
tsk(o)
output skew
time
between channels
tW
pulse width
data inputs
fdata
data rate
[1]
[3]
Mbps
tpd is the same as tPLH and tPHL.
ten is the same as tPZL and tPZH.
tdis is the same as tPLZ and tPHZ.
tt is the same as tTHL and tTLH.
[2]
Delay between OE going LOW and when the outputs are actually disabled.
[3]
Skew between any two outputs of the same package switching in the same direction.
NTB0102_Q100
Product data sheet
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© NXP B.V. 2013. All rights reserved.
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
Table 13. Typical power dissipation capacitance
Voltages are referenced to GND (ground = 0 V).[1][2]
Symbol Parameter
Conditions
VCC(A)
1.2 V
1.2 V
1.5 V
1.8 V
Unit
2.5 V
2.5 V
3.3 V
VCC(B)
1.8 V
5.0 V
1.8 V
1.8 V
2.5 V
5.0 V
3.3 V
to
5.0 V
5
5
5
5
5
5
5
pF
Tamb = 25 C
power
dissipation
capacitance
CPD
outputs enabled; OE = VCC(A)
A port: (direction A to B)
A port: (direction B to A)
8
8
8
8
8
8
8
pF
B port: (direction A to B)
18
18
18
18
18
18
18
pF
B port: (direction B to A)
13
16
12
12
12
12
13
pF
A port: (direction A to B)
0.12
0.12
0.04
0.05
0.08
0.08
0.07
pF
A port: (direction B to A)
0.01
0.01
0.01
0.01
0.01
0.01
0.01
pF
B port: (direction A to B)
0.01
0.01
0.01
0.01
0.01
0.01
0.01
pF
B port: (direction B to A)
0.07
0.09
0.07
0.07
0.05
0.09
0.09
pF
outputs disabled; OE = GND
[1]
CPD is used to determine the dynamic power dissipation (PD in W).
PD = CPD  VCC2  fi  N + (CL  VCC2  fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = load capacitance in pF;
VCC = supply voltage in V;
N = number of inputs switching;
(CL  VCC2  fo) = sum of the outputs.
[2]
fi = 10 MHz; VI = GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL =  .
12. Waveforms
VI
An, Bn
input
VM
GND
tPHL
VOH
Bn, An
output
tPLH
90 %
VM
VOL
10 %
tTHL
tTLH
001aal918
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 4.
Data input (An, Bn) to data output (Bn, An) propagation delay times
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
VI
OE input
VM
GND
tPLZ
output
LOW-to-OFF
OFF-to-LOW
tPZL
VCCO
VM
VX
VOL
tPHZ
VOH
tPZH
VY
output
HIGH-to-OFF
OFF-to-HIGH
VM
GND
outputs
enabled
outputs
disabled
outputs
enabled
001aal919
Measurement points are given in Table 14.
VOL and VOH are typical output voltage levels that occur with the output load.
Fig 5.
Enable and disable times
Table 14.
Measurement points[1]
Supply voltage
Input
Output
VCCO
VM
VM
VX
VY
1.2 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH  0.1 V
1.5 V  0.1 V
0.5VCCI
0.5VCCO
VOL + 0.1 V
VOH  0.1 V
1.8 V  0.15 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH  0.15 V
2.5 V  0.2 V
0.5VCCI
0.5VCCO
VOL + 0.15 V
VOH  0.15 V
3.3 V  0.3 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH  0.3 V
5.0 V  0.5 V
0.5VCCI
0.5VCCO
VOL + 0.3 V
VOH  0.3 V
[1]
VCCI is the supply voltage associated with the input and VCCO is the supply voltage associated with the output.
NTB0102_Q100
Product data sheet
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Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
13 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
VI
tW
90 %
negative
pulse
VM
0V
tf
tr
tr
tf
VI
90 %
positive
pulse
0V
VM
10 %
VM
VM
10 %
tW
VEXT
VCC
VI
RL
VO
G
DUT
CL
RL
001aal920
Test data is given in Table 15.
All input pulses are supplied by generators having the following characteristics: PRR  10 MHz; ZO = 50 ; dV/dt  1.0 V/ns.
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 6.
Table 15.
Test circuit for measuring switching times
Test data
Supply voltage
Input
VCC(A)
VI[1]
VCC(B)
1.2 V to 3.6 V 1.65 V to 5.5 V VCCI
Load
VEXT
t/V
CL
RL[2]
 1.0 ns/V
15 pF
50 k, 1 M open
tPLH, tPHL
tPZH, tPHZ
tPZL, tPLZ[3]
open
2VCCO
[1]
VCCI is the supply voltage associated with the input.
[2]
For measuring data rate, pulse width, propagation delay and output rise and fall measurements, RL = 1 M; for measuring enable and
disable times, RL = 50 k.
[3]
VCCO is the supply voltage associated with the output.
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
13. Application information
13.1 Applications
Voltage level-translation applications. The NTB0102-Q100 can be used to interface
between devices or systems operating at different supply voltages. See Figure 7 for a
typical operating circuit using the NTB0102-Q100.
9
9
—)
9
6<67(0
&21752//(5
9&&$
9&&%
9
6<67(0
—)
2(
17%4
'$7$
$
%
$
%
'$7$
*1'
DDD
Fig 7.
Typical operating circuit
NTB0102_Q100
Product data sheet
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© NXP B.V. 2013. All rights reserved.
15 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
13.2 Architecture
The architecture of the NTB0102-Q100 is shown in Figure 8. The device does not require
an extra input signal to control the direction of data flow from A to B or from B to A. In a
static state, the output drivers of the NTB0102-Q100 can maintain a defined output level.
However, the output architecture is designed to be weak. This design enables an external
driver to override the drivers when data on the bus starts flowing in the opposite direction.
The output of one-shot circuits detect rising or falling edges on the A or B ports. During a
rising edge, the one-shot circuits turn on the PMOS transistors (T1, T3) for a short
duration, accelerating the LOW-to-HIGH transition. Similarly, during a falling edge, the
one-shot circuits turn on the NMOS transistors (T2, T4) for a short duration, accelerating
the HIGH-to-LOW transition. During output transitions, the typical output impedance is
70  at VCCO = 1.2 V to 1.8 V, 50  at VCCO = 1.8 V to 3.3 V and 40  at VCCO = 3.3 V to
5.0 V.
VCC(B)
VCC(A)
ONE
SHOT
T1
4 kΩ
ONE
SHOT
T2
B
A
T3
ONE
SHOT
4 kΩ
T4
Fig 8.
ONE
SHOT
001aal921
Architecture of NTB0102-Q100 I/O cell (one channel)
NTB0102_Q100
Product data sheet
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NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
13.3 Input driver requirements
For correct operation, the device driving the data I/Os of the NTB0102-Q100 must have a
minimum drive capability of 2 mA. See Figure 9 for a plot of typical input current versus
input voltage.
II
VT/4 kΩ
VI
−(VD − VT)/4 kΩ
001aal922
VT: input threshold voltage of the NTB0102-Q100 (typically VCCI / 2).
VD: supply voltage of the external driver.
Fig 9.
Typical input current versus input voltage graph
13.4 Power-up
During operation, VCC(A) must never be higher than VCC(B). However, during power-up,
VCC(A)  VCC(B) does not damage the device, so either power supply can be ramped up
first. There is no special power-up sequencing required. The NTB0102-Q100 includes
circuitry that disables all output ports when either VCC(A) or VCC(B) is switched off.
13.5 Enable and disable
An output enable input (OE) is used to disable the device. Setting OE = LOW causes all
I/Os to assume the high-impedance OFF-state. The disable time (tdis with no external
load) indicates the delay between when OE goes LOW and when outputs actually
become disabled. The enable time (ten) indicates the amount of time that must be allowed
for the one one-shot circuitry to become operational after OE is taken HIGH. To ensure the
high-impedance OFF-state during power-up or power-down, pin OE should be tied to
GND through a pull-down resistor. The current-sourcing capability of the driver determines
the minimum value of the resistor.
13.6 Pull-up or pull-down resistors on I/O lines
As mentioned previously the NTB0102-Q100 is designed with low static drive strength to
drive capacitive loads of up to 70 pF. To avoid output contention issues, any pull-up or
pull-down resistors used must be above 50 k. For this reason, the NTB0102 is not
recommended for use in open-drain driver applications such as 1-Wire or I2C-bus. For
these applications, the NTS0102-Q100 level translator is recommended.
NTB0102_Q100
Product data sheet
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Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
17 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
14. Package outline
TSSOP8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm
D
E
A
SOT505-2
X
c
HE
y
v M A
Z
5
8
A
A2
(A3)
A1
pin 1 index
θ
Lp
L
1
4
e
detail X
w M
bp
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D(1)
E(1)
e
HE
L
Lp
v
w
y
Z(1)
θ
mm
1.1
0.15
0.00
0.95
0.75
0.25
0.38
0.22
0.18
0.08
3.1
2.9
3.1
2.9
0.65
4.1
3.9
0.5
0.47
0.33
0.2
0.13
0.1
0.70
0.35
8°
0°
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
OUTLINE
VERSION
SOT505-2
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
02-01-16
---
Fig 10. Package outline SOT505-2 (TSSOP8)
NTB0102_Q100
Product data sheet
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18 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
XSON8: plastic extremely thin small outline package; no leads;
8 terminals; body 3 x 2 x 0.5 mm
B
D
SOT996-2
A
E
A
A1
detail X
terminal 1
index area
e1
1
4
8
5
C
C A B
C
v
w
b
e
L1
y
y1 C
L2
L
X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit(1)
max
nom
min
mm
A
A1
b
0.05 0.35
D
E
2.1
3.1
0.5
0.00 0.15
1.9
e
e1
0.5
1.5
2.9
L
L1
L2
0.5
0.15
0.6
0.3
0.05
0.4
v
0.1
w
y
0.05 0.05
y1
0.1
sot996-2_po
Outline
version
References
IEC
JEDEC
JEITA
European
projection
Issue date
07-12-21
12-11-20
SOT996-2
Fig 11. Package outline SOT996-2 (XSON8)
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
19 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
15. Abbreviations
Table 16.
Abbreviations
Acronym
Description
CDM
Charged Device Model
DUT
Device Under Test
ESD
ElectroStatic Discharge
HBM
Human Body Model
MIL
Military
MM
Machine Model
NMOS
N-type Metal Oxide Semiconductor
PMOS
P-type Metal Oxide Semiconductor
PRR
Pulse Repetition Rate
16. Revision history
Table 17.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
NTB0102_Q100 v.1
20130418
Product data sheet
-
-
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
20 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
17. Legal information
17.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
17.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
17.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
NTB0102_Q100
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
21 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
17.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
18. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesadd[email protected]
NTB0102_Q100
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 18 April 2013
© NXP B.V. 2013. All rights reserved.
22 of 23
NTB0102-Q100
NXP Semiconductors
Dual supply translating transceiver; auto direction sensing; 3-state
19. Contents
1
2
3
4
5
6
6.1
6.2
7
8
9
10
11
12
13
13.1
13.2
13.3
13.4
13.5
13.6
14
15
16
17
17.1
17.2
17.3
17.4
18
19
General description . . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 5
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Dynamic characteristics . . . . . . . . . . . . . . . . . . 7
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Application information. . . . . . . . . . . . . . . . . . 15
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Architecture . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input driver requirements . . . . . . . . . . . . . . . . 17
Power-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Enable and disable . . . . . . . . . . . . . . . . . . . . . 17
Pull-up or pull-down resistors on I/O lines . . . 17
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 18
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 20
Legal information. . . . . . . . . . . . . . . . . . . . . . . 21
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 21
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Contact information. . . . . . . . . . . . . . . . . . . . . 22
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 18 April 2013
Document identifier: NTB0102_Q100