HZD6.2Z4 Silicon Planar Zener Diode for Surge Absorb REJ03G0200-0200 Rev.2.00 Oct 20, 2004 Features • Low capacitance (C = 4.0 pF max) and can protect ESD of signal line. • Super small Flat Package (SFP) is suitable for surface mount design. Ordering Information Type No. HZD6.2Z4 Laser Mark Package Code N1 SFP Pin Arrangement Cathode mark Mark 1 N1 2 1. Cathode 2. Anode Rev.2.00, Oct 20, 2004, page 1 of 4 HZD6.2Z4 Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Symbol Pd * Value 150 Unit mW Tj Tstg 150 −55 to +150 °C °C Note: See Fig.2. Electrical Characteristics (Ta = 25°C) Item Zener voltage Symbol VZ Min 5.9 Typ — Max 6.5 Unit V Reverse current Capacitance Dynamic resistance 1 2 ESD-Capability * * Test Condition IZ = 5 mA, 40 ms pulse IR C — — — — 3 4 µA pF VR = 5.5 V VR = 0 V, f = 1 MHz rd — — 8 — — 60 — Ω kV IZ = 5 mA C = 150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Notes: 1. Failure criterion ; IR > 3 µA at VR = 5.5 V. 2. Between cathode and anode. 3. Please do not use the soldering iron due to avoid high stress to the SFP package. Rev.2.00, Oct 20, 2004, page 2 of 4 HZD6.2Z4 Main Characteristic 10–2 250 Zener Current IZ (A) 10–4 10–5 0 2 4 6 8 150 1.5 unit: mm 100 50 0 10 1.5 0 50 100 150 200 Zener Voltage VZ (V) Ambient Temperature Ta (°C) Fig.1 Zener current vs. Zener voltage Fig.2 Power Dissipation vs. Ambient Temperature Nonrepetitive Surge Reverses Power PRSM (W) 10–6 200 0.8 10–3 3.0 Power Dissipation Pd (mW) Polyimide board 20h×15w×0.8t 104 PRSM t 10 3 Ta = 25°C nonrepetitive 102 10 1.0 10-2 10-1 1.0 10 Time t (s) Fig.3 Surge Reverse Power Ratings Rev.2.00, Oct 20, 2004, page 3 of 4 102 103 HZD6.2Z4 Package Dimensions As of January, 2003 1.0 ± 0.10 0.13 ± 0.05 1.4 ± 0.10 0.5 – 0.55 0.3 ± 0.05 0.6 ± 0.05 Unit: mm Package Code JEDEC JEITA Mass (reference value) Rev.2.00, Oct 20, 2004, page 4 of 4 SFP — — 0.0010 g Sales Strategic Planning Div. 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