tisp4xxxl3aj

M
PL
IA
N
T
TISP4070L3AJ THRU TISP4395L3AJ
*R
oH
S
CO
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
TISP4xxxL3AJ Overvoltage Protector Series
SMA (DO-214AC) Package
25% Smaller Placement Area than SMB
SMAJ Package (Top View)
Ion-Implanted Breakdown Region
Precise and Stable Voltage
VDRM
V(BO)
V
V
‘4070
58
70
‘4080
65
80
‘4090
70
90
‘4125
100
125
‘4145
120
145
‘4165
135
165
‘4180
145
180
‘4220
160
220
‘4240
180
240
‘4260
200
260
‘4290
230
290
‘4320
240
320
‘4350
275
350
‘4360
290
360
‘4395
320
395
Device
R (B) 1
2 T (A)
MDXXCCE
Device Symbol
T
SD4XAA
R
T erminals T and R correspond to the
alternative line designators of A and B
..............................................UL Recognized Components
Rated for International Surge Wave Shapes
ITSP
Wave Shape
Standard
2/10 μs
GR-1089-CORE
125
A
8/20 μs
IEC 61000-4-5
100
10/160 μs
FCC Part 68
65
10/700 μs
ITU-T K.20/21/45
50
10/560 μs
FCC Part 68
40
10/1000 μs
GR-1089-CORE
30
How to Order
Device
TISP 4xxxL3AJ
Package
SMA (DO-214AC)
Carrier
Embossed Tape Reel Pack
Order As
TISP4xxxL3AJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 090, etc.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Description
These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning
flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used
for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of
devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).
The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until
the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the
current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current helps prevent d.c. latchup as
the diverted current subsides.
The TISP4xxxL3 range consists of fifteen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are
guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are in an SMAJ
(JEDEC DO-214AC with J-bend leads) plastic package. These devices are supplied in embossed tape reel carrier pack. For alternative voltage
and holding current values, consult the factory. For higher rated impulse currents, the 50 A 10/1000 TISP4xxxM3AJ series in SMA and the 100
A 10/1000 TISP4xxxH3BJ series in SMB are available.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Repetitive peak off-state voltage, (see Note 1)
Symbol
‘4070
‘4080
‘4090
‘4125
‘4145
‘4165
‘4180
‘4220
‘4240
‘4260
‘4290
VDRM
Value
± 58
± 65
± 70
±100
±120
±135
±145
±160
±180
±200
±230
‘4320
±240
‘4350
‘4360
‘4395
±275
±290
±320
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 μs (GR-1089-CORE, 2/10 μs voltage wave shape)
8/20 μs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160 μs (FCC Part 68, 10/160 μs voltage wave shape)
5/310 μs (ITU-T K.20/21/45, K.44 10/700 μs voltage wave shape)
5/310 μs (FTZ R12, 10/700 μs voltage wave shape)
10/560 μs (FCC Part 68, 10/560 μs voltage wave shape)
10/1000 μs (GR-1089-CORE, 10/1000 μs voltage wave shape)
Non-repetitive peak on-state current (see Notes 2, 3 and 4)
20 ms (50 Hz) full sine wave
1 s (50 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
ITSP
125
100
65
50
50
40
30
ITSM
18
7
1.6
Unit
V
A
A
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/°C.
2. Initially, the TISP4xxxL3 must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the TISP4xxxL3 returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. Derate current values at -0.61 %/°C for ambient temperatures above 25 ° C.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Recommended Operating Conditions
Component
RS
Min
Typ
Max
Unit
series resistor for FCC Part 68, 10/560 type A surge survival
12
Ω
series resistor for FCC Part 68, 9/720 type B surge survival
0
Ω
23
Ω
series resistor for K.20, K.21 and K.45 1.5 kV, 10/700 surge survival
series resistor for GR-1089-CORE first-level and second-level surge survival
0
Ω
series resistor for K.20, K.21 and K.45 coordination with a 400 V primary protector
7
Ω
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDRM
Parameter
Repetitive peak offstate current
V(BO) Breakover voltage
I(BO)
IH
dv/dt
Test Conditions
VD = VDRM
dv/dt =“50 V/ms, R SOURCE = 300 Ω
Breakover current
dv/dt = ±0 V/ms,
Holding current
I T = ±5 A, di/dt = +/-30 mA/ms
Critical rate of rise of
off-state voltage
TA = 25 °C
Min
Typ
Max
±5
TA = 85 °C
±10
‘4070
±70
‘4080
±80
‘4090
±90
‘4125
±125
‘4145
±145
‘4165
±165
‘4180
±180
‘4220
±220
‘4240
±240
‘4260
±260
‘4290
±290
‘4320
±320
‘4350
±350
‘4360
±360
‘4395
±395
±0.
R SOURCE = 300 Ω
Linear voltage ramp, Maximum ramp value < 0.85V DRM
±0.15
Unit
μA
V
A
A
±0.60
kV/μs
±5
‘4070, VD = ± 52V
‘4080, VD = ± 59V
‘4090, VD = ± 63V
‘4125, VD = ±90 V
‘4145, VD = ±108 V
‘4165, VD = ±122 V
‘4180, VD = ±131 V
ID
Off-state current
‘4220, VD = ±144 V
±2
μA
‘4240, VD = ±162 V
‘4260, VD = ±180 V
‘4290, VD = ±207 V
‘4320, VD = ±216 V
‘4350, VD = ±248 V
‘4360, VD = ±261 V
‘4395, VD = ±288 V
ID
Off-state current
V D = ±50 V
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
±10
μA
TISP4xxxL3AJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)
Parameter
Test Conditions
f = 1 MHz, Vd = 1 V rms, VD = ±1 V
Coff
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = ±50 V
Min
4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
‘4070 thru ‘4090
‘4125 thru ‘4220
‘4240 thru ‘4395
Typ
Max
Unit
53
40
33
25
18
14
64
48
40
30
22
17
pF
Typ
Max
Unit
Thermal Characteristics
Parameter
RθJA
Junction to free air thermal resistance
Test Conditions
Min
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 75)
265 mm x 210 mm populated line card,
4-layer PCB, IT = ITSM(1000), TA = 25 °C
115
°C/W
52
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V DRM
-v
IDRM
ID
VD
ID
IDRM
VD
VDRM
+v
IH
I(BO)
V(BO)
VT
IT
ITSM
I
Quadrant III
Switching
Characteristic
ITSP
-i
Figure 1. Voltage-Current Characteristic for T and R Terminals
All Measurements are Referenced to the R Terminal
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
PMXXAAB
TISP4xxxL3AJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TC4LAG
10
1.15
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4LAF
Normalized Breakover Voltage
|ID| - Off-State Current - μA
VD = ± V
1
0·1
0·01
1.10
1.05
1.00
0.95
0.90
0·001
-25
0
25
50
75
100
125
TJ - Junction Temperature - °C
-25
150
2.0
TC4MAM
tW = 100 μs
7
5
4
3
0.7
0.5
0.7
100
125
150
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4LAD
1.5
10
1
75
TA = 25 °C
20
15
2
1.5
50
Figure 3.
Normalized Holding Current
IT - On-State Current - A
50
40
30
25
TJ - Junction Temperature - °C
Figure 2.
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
0
'4070
THRU
'4090
'4240
THRU
'4395
1
Figure 4.
0.9
0.8
0.7
0.6
0.5
'4125
THRU
'4220
1.5
2
3
4 5
VT - On-State Voltage - V
1.0
0.4
7
10
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Typical Characteristics
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
TC4LABC
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
1
TCLAEB
30
0.9
Capacitance Normalized to VD = 0
0.7
ΔC - Differential Off-State Capacitance - pF
TJ = 25 °C
Vd = 1 Vrms
0.8
0.6
0.5
'4070 THRU '4090
0.4
'4125 THRU '4220
0.3
'4240 THRU '4395
0.2
0.5
1
2
3
5
10
20 30
VD - Off-state Voltage - V
50
25
C
Δ = Coff(-2 V) - Coff(-50 V)
20
15
10
50
100150
|Coff(+VD) - C off(-VD) | — Capacitance Asymmetry — pF
Figure 6.
60 70 80 90100
150
200 250 300 350
VDRM - Repetitive Peak Off-State Voltage - V
Figure 7.
TYPICAL CAPACITANCE ASYMMETRY
vs
TC4LBB
OFF-STATE VOLTAGE
1
Vd = 10 mV rms,1 MHz
Vd = 1 Vrm s, 1 MHz
0
1
2
3
4 5
7
10
20
30 40 50
VD — Off-state Voltage - V
Figure 6.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
Rating and Thermal Information
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI4LAI
20
15
10
9
8
7
6
0.99
0.98
5
4
'4070 THRU '4090
0.97
0.96
'4125 THRU '4220
3
0.95
2
0.94
1.5
0.01
0.1
1
t - Current Duration - s
Figure 9.
10
TI4LADB
1.00
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
Derating Factor
ITSM(t) - Non-Repetitive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
100
'4240 THRU '4395
0.93
-40 -35 -30 -25 -20 -15 -10 -5
0
5
10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 10.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
TISP4xxxL3AJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
2.34
(. 092)
SMA Land Pattern
1.90
(.075)
2.16
(.085)
DIMENSIONS ARE:
MILLIMETERS
(INCHES)
MDXX BIC
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.
Device
Symbolization
Code
TISP4070L3
4070L
TISP4080L3
4080L
TISP4090L3
4090L
TISP4125L3
4125L
TISP4145L3
4145L
TISP4165L3
4165L
TISP4180L3
4180L
TISP4220L3
4220L
TISP4240L3
4240L
TISP4260L3
4260L
TISP4290L3
4290L
TISP4320L3
4320L
TISP4350L3
4350L
TISP4360L3
4360L
TISP4395L3
4395L
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Carrier
Standard Quantity
Embossed Tape Reel Pack
5,000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company and is registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 2000 - REVISED SEPTEMBER 2014
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.