INTERSIL ISL54502

ISL54501, ISL54502
®
Data Sheet
August 29, 2007
FN6550.1
+1.8V to +5.5V, 5Ω, Single SPST Analog
Switches
Features
The Intersil ISL54501 and ISL54502 devices are low
ON-resistance, low voltage, bidirectional, single pole/single
throw (SPST) analog switches designed to operate from a
single +1.8V to +5.5V supply. Targeted applications include
battery powered equipment that benefit from low rON
resistance (5Ω), excellent rON flatness, and fast switching
speeds (tON = 22ns, tOFF = 15ns). The digital logic input is
1.8V CMOS compatible when using a single +3V supply.
• rON flatness (+4.5V Supply) . . . . . . . . . . . . . . . . . . . . . . 1.1Ω
Cell phones, for example, often face ASIC functionality
limitations. The number of analog input or GPIO pins may be
limited and digital geometries are not well suited to analog
switch performance. This family of parts may be used to
switch in additional functionality while reducing ASIC design
risk. The ISL54501, ISL54502 are offered in a 6 Ld
1.2mmx1.0mmx0.4mm pitch µTDFN package, alleviating
board space limitations.
The ISL54501 has one normally open (NO) switch and
ISL54502 has one normally closed (NC) switch.
TABLE 1. FEATURES AT A GLANCE
ISL54501
ISL54502
Number of Switches
1
1
SW
NO
NC
1.8V rON
12Ω
12Ω
1.8V tON/tOFF
70ns/52ns
70ns/52ns
3V rON
6.0Ω
6.0Ω
3V tON/tOFF
30ns/20ns
30ns/20ns
5V rON
5.0Ω
5.0Ω
5V tON/tOFF
22ns/15ns
22ns/15ns
• ON-resistance (rON)
- VCC = +5.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0Ω
- VCC = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0Ω
- VCC = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Ω
• Single supply operation . . . . . . . . . . . . . . . . . +1.8V to +5.5V
• Fast switching action (+4.5V Supply)
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22ns
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15ns
• ESD HBM rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6kV
• 1.8V CMOS logic compatible (+3V supply)
• Available in 6 Ld µTDFN Package
• Pb-free available (RoHS compliant)
Applications
• Battery powered, handheld, and portable equipment
- Cellular/mobile phones
- Pagers
- Laptops, notebooks, palmtops
• Portable Test and Measurement
• Medical Equipment
• Audio and video switching
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
6 Ld μTDFN
Package
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2007. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL54501, ISL54502
Ordering Information
PART NUMBER
(Note)
TEMP. RANGE
(°C)
PART MARKING
PACKAGE
(Pb-Free)
PKG. DWG. #
ISL54501IRUZ-T*
1
-40 to +85
6 Ld μTDFN (Tape and Reel)
L6.1.2x1.0A
ISL54502IRUZ-T*
2
-40 to +85
6 Ld μTDFN (Tape and Reel)
L6.1.2x1.0A
*Please refer to TB347 for details on reel specifications.
NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and
NiPdAu plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free
products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
Pinouts
(Note 1)
ISL54502
(6 LD μTDFN)
TOP VIEW
ISL54501
(6 LD μTDFN)
TOP VIEW
NO
1
6
IN
N.C.
1
6
IN
GND
2
5
V+
GND
2
5
V+
N.C.
3
4
COM
NC
3
4
COM
NOTE:
1. Switches Shown for Logic “0” Input.
Truth Table
NOTE:
Pin Descriptions
LOGIC
ISL54501
ISL54502
PIN
0
Off
On
V+
1
On
Off
GND
Ground Connection
IN
Digital Control Input
Logic “0” ≤0.5V. Logic “1” ≥1.4V with a 3V supply.
COM
2
FUNCTION
System Power Supply Input (+1.8V to +5.5V)
Analog Switch Common Pin
NO
Analog Switch Normally Open Pin
NC
Analog Switch Normally Closed Pin
N.C.
No Connect
FN6550.1
August 29, 2007
ISL54501, ISL54502
Absolute Maximum Ratings
Thermal Information
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to 6.5V
Input Voltages
NO, NC, IN (Note 2). . . . . . . . . . . . . . . . . . . . -0.5V to ((V+) + 0.5V)
Output Voltages
COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to ((V+) + 0.5V)
Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . . ±300mA
Peak Current NO, NC, or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . . .±600mA
ESD Rating
Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>6kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>200V
Charged Device Model. . . . . . . . . . . . . . . . . . . . . . . . . . . .>1400V
Thermal Resistance (Typical, Notes 3, 4) θJA (°C/W) θJC (°C/W)
6 Ld µTDFN Package . . . . . . . . . . . . .
239.2
111.6
Maximum Junction Temperature (Plastic Package). . . . . . . +150°C
Maximum Storage Temperature Range . . . . . . . . . . . -65°C to +150°C
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
V+ (Positive DC Supply Voltage) . . . . . . . . . . . . . . . . . 1.8V to 5.5V
Analog Signal Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to V+
VIN (Digital Logic Input Voltage (IN) . . . . . . . . . . . . . . . . . 0V to V+
Temperature Range
ISL54501IRUZ, ISL54502IRUZ . . . . . . . . . . . . . . -40°C to +85°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
NOTES:
2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings.
3. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See
Tech Brief TB379.
4. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications - 5V Supply
PARAMETER
Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, VINH = 2.0V, VINL = 0.8V (Note 5),
Unless Otherwise Specified.
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes 6, 7)
Full
0
-
V+
V
25
-
4.2
5
Ω
Full
-
-
6
Ω
25
-
1.1
1.3
Ω
Full
-
-
1.5
Ω
25
-25
1.2
25
nA
Full
-150
-
150
nA
TYP
MAX
(Notes 6, 7) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
ON-Resistance, rON
V+ = 4.5V, ICOM = 100mA, VNO or VNC = 0V to V+,
(Note 9, See Figure 4)
rON Flatness, rFLAT(ON)
V+ = 4.5V, ICOM = 100mA, VNO or VNC = 0V to V+,
(Notes 8, 9)
NO or NC OFF Leakage Current,
INO(OFF) or INC(OFF)
V+ = 5.5V, VCOM = 0.3V, 5V, VNO or VNC = 5V, 0.3V
COM ON Leakage Current,
ICOM(ON)
V+ = 5.5V, VCOM = 0.3V, 5V, or VNO or VNC = 0.3V,
5V, or Floating
25
-30
1.7
30
nA
Full
-300
-
300
nA
V+ = 4.5V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF
(See Figure 1, Note 9)
25
-
22
-
ns
Full
-
23
-
ns
V+ = 4.5V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF
(See Figure 1, Note 9)
25
-
15
-
ns
Full
-
15
-
ns
Full
-
18
-
ns
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
Turn-OFF Time, tOFF
Break-Before-Make Time Delay, tD V+ = 5.5V, VNO or VNC = 3.0V, RL = 50Ω, CL = 35pF
(See Figure 3, Note 9)
Charge Injection, Q
VG = 0V, RG = 0Ω, CL = 1.0nF (See Figure 2)
25
-
16
-
pC
OFF Isolation
RL = 50Ω, CL = 5pF, f = 1MHz, VCOM = 1VP-P
(See Figure 3)
25
-
75
-
dB
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 32Ω
25
-
0.12
-
%
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω
25
-
0.01
-
%
-3dB Bandwidth
Signal = 0dBm, RL = 50Ω
25
-
350
-
MHz
NO or NC OFF Capacitance,
COFF
V+ = 4.5V, f = 1MHz, VNO or VNC = VCOM = 0V
(See Figure 5)
25
-
6
-
pF
COM ON Capacitance,
CCOM(ON)
V+ = 4.5V, f = 1MHz, VNO or VNC = VCOM = 0V
(See Figure 5)
25
-
12
-
pF
3
FN6550.1
August 29, 2007
ISL54501, ISL54502
Electrical Specifications - 5V Supply
PARAMETER
Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, VINH = 2.0V, VINL = 0.8V (Note 5),
Unless Otherwise Specified. (Continued)
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes 6, 7)
Full
1.8
-
5.5
V
25
-
0.02
0.1
μA
Full
-
0.5
2.5
μA
TYP
MAX
(Notes 6, 7) UNITS
POWER SUPPLY CHARACTERISTICS
Power Supply Range
Positive Supply Current, I+
V+ = 5.5V, VIN = 0V or V+
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, VINL
Full
-
-
0.8
V
Input Voltage High, VINH
Full
2.4
-
-
V
Full
-0.1
0.044
0.1
μA
Input Current, IINH, IINL
V+ = 5.5V, VIN = 0V or V+
Electrical Specifications - 3V Supply
PARAMETER
Test Conditions: V+ = +2.7V to +3.6V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Note 5),
Unless Otherwise Specified.
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes 6, 7)
TYP
MAX
(Notes 6, 7) UNITS
Full
0
-
V+
V
25
-
6.3
7
Ω
Full
-
-
8
Ω
25
-
1.8
2.3
Ω
Full
-
-
2.5
Ω
25
-
28
-
ns
Full
-
30
-
ns
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range,
VANALOG
ON-Resistance, rON
V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+,
(Note 9, See Figure 4)
rON Flatness, rFLAT(ON)
V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+,
(Notes 8, 9)
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
Turn-OFF Time, tOFF
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF
(See Figure 1, Note 8)
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF
(See Figure 1, Note 9)
25
-
20
-
ns
Full
-
30
-
ns
Charge Injection, Q
VG = 0V, RG = 0Ω,CL = 1.0nF (See Figure 2)
25
-
12
-
pC
OFF Isolation
RL = 50Ω, CL = 5pF, f = 1MHz, VCOM = 1VP-P
(See Figure 3)
25
-
75
-
dB
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 32Ω
25
-
0.4
-
%
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600Ω
25
-
0.053
-
%
-3dB Bandwidth
Signal = 0dBm, RL = 50Ω
25
-
350
-
MHz
NO or NC OFF Capacitance,
COFF
f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 5)
25
-
6
-
pF
COM OFF Capacitance,
CCOM(OFF)
f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 5)
25
-
10
-
pF
COM ON Capacitance,
CCOM(ON)
f = 1MHz, VNO or VNC = VCOM = 0V (See Figure 5)
25
-
12
-
pF
25
-
0.02
-
μA
Full
-
0.11
-
μA
Full
-
-
0.5
V
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V+ = 3.6V, VIN = 0V or V+
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, VINL
Input Voltage High, VINH
Input Current, IINH, IINL
V+ = 3.6V, VIN = 0V or V+
4
Full
1.4
-
-
V
Full
-0.1
0.049
0.1
μA
FN6550.1
August 29, 2007
ISL54501, ISL54502
Electrical Specifications - 1.8V Supply
PARAMETER
Test Conditions: V+ = +1.8V, GND = 0V, VINH = 1V, VINL = 0.4V (Note 5),
Unless Otherwise Specified.
TEST CONDITIONS
TEMP
(°C)
MIN
(Notes 6, 7)
Full
0
-
V+
V
25
-
11.9
12.8
Ω
Full
-
-
13.8
Ω
25
-
70
-
ns
Full
ns
TYP
MAX
(Notes 6, 7) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
ON-Resistance, rON
V+ = 1.8V, ICOM = 10mA, VNO or VNC = 0V to V+
(Note 9, See Figure 4)
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
V+ = 1.8V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF
(See Figure 1, Note 9)
-
130
-
Turn-OFF Time, tOFF
V+ = 1.8V, VNO or VNC = 1.5V, RL = 50Ω, CL = 35pF
(See Figure 1, Note 9)
25
-
52
-
ns
Full
-
100
-
ns
VG = V+/2, RG = 0Ω, CL = 1.0nF (See Figure 2)
25
-
5.8
-
pC
Charge Injection, Q
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, VINL
Full
-
-
0.4
V
Input Voltage High, VINH
Full
1
-
-
V
NOTES:
5. VIN = input voltage to perform proper function.
6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
7. Parts are 100% tested at +25°C. Over-temperature limits established by characterization and are not production tested.
8. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range.
9. Limits established by characterization and are not production tested.
Test Circuits and Waveforms
V+
LOGIC
INPUT
V+
tr < 20ns
tf < 20ns
50%
0V
tOFF
SWITCH
INPUT
SWITCH
INPUT VNO
VOUT
90%
SWITCH
OUTPUT
C
VOUT
NO or NC
COM
IN
90%
0V
LOGIC
INPUT
GND
RL
50Ω
CL
35pF
tON
Logic input waveform is inverted for switches that have the opposite
logic sense.
Repeat test for all switches. CL includes fixture and stray
capacitance.
RL
--------------------------V OUT = V
(NO or NC) R + r
L
( ON )
FIGURE 1B. TEST CIRCUIT
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1. SWITCHING TIMES
5
FN6550.1
August 29, 2007
ISL54501, ISL54502
Test Circuits and Waveforms (Continued)
V+
SWITCH
OUTPUT
VOUT
RG
ΔVOUT
VINH
GND
VOUT
COM
NO OR NC
VG
ON
ON
LOGIC
INPUT
C
IN
CL
OFF
VINL
LOGIC
INPUT
Q = ΔVOUT x CL
FIGURE 2A. MEASUREMENT POINTS
FIGURE 2B. TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
V+
V+
C
C
SIGNAL
GENERATOR
rON = V1/I1 *
NO OR NC
NO OR NC
VNX
IN
0V OR V+
IN
V1
I1
VINL OR VINH
100mA
COM
COM
ANALYZER
GND
GND
RL
* I = 10mA AT V+ = 1.8V
1
FIGURE 3. OFF ISOLATION TEST CIRCUIT
FIGURE 4. rON TEST CIRCUIT
V+
C
NO OR NC
IN
VINL OR VINH
IMPEDANCE
ANALYZER
COM
GND
FIGURE 5. CAPACITANCE TEST CIRCUIT
6
FN6550.1
August 29, 2007
ISL54501, ISL54502
Detailed Description
Supply Sequencing And Overvoltage Protection
The ISL54501 and ISL54502 are bidirectional, single
pole/single throw (SPST) analog switches. They offer
precise switching capability from a single 1.8V to 5.5V
supply with low ON-resistance and high speed operation.
With a single supply of 5V the typical ON-resistance is only
5Ω, with a typical turn-on and turn-off time of: tON = 22ns,
tOFF = 15ns. The devices are especially well suited for
portable battery powered equipment due to their low
operating supply voltage (1.8V), low power consumption
(0.11µW), low leakage currents (300nA max), and tiny µTDFN
package.
With any CMOS device, proper power supply sequencing is
required to protect the device from excessive input currents,
which might permanently damage the IC. All I/O pins contain
ESD protection diodes from the pin to V+ and to GND (see
Figure 7). To prevent forward biasing these diodes, V+ must
be applied before any input signals, and the input signal
voltages must remain between V+ and GND.
The ISL54501 is a single normally open (NO) SPST analog
switch. The ISL54502 is a single normally closed (NC) SPST
analog switch.
External V+ Series Resistor
For improved ESD and latch-up immunity, Intersil
recommends adding a 100Ω resistor in series with the V+
power supply pin of the ISL54050 IC (see Figure 6).
During an overvoltage transient event (such as occurs
during system level IEC 61000 ESD testing), substrate
currents can be generated in the IC that can trigger parasitic
SCR structures to turn ON, creating a low impedance path
from the V+ power supply to ground. This will result in a
significant amount of current flow in the IC, which can
potentially create a latch-up state or permanently damage
the IC. The external V+ resistor limits the current during this
over-stress situation and has been found to prevent latch-up
or destructive damage for many over voltage transient
events.
Under normal operation the sub-microamp IDD current of the
IC produces an insignificant voltage drop across the 100Ω
series resistor resulting in no impact to switch operation or
performance.
Logic inputs can easily be protected by adding a 1kΩ
resistor in series with the input (see Figure 7). The resistor
limits the input current below the threshold that produces
permanent damage, and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
This method is not acceptable for the signal path inputs.
Adding a series resistor to the switch input defeats the
purpose of using a low rON switch. Connecting Schottky
diodes to the signal pins (as shown in Figure 9) will shunt the
fault current to the supply or to ground, thereby protecting
the switch. These Schottky diodes must be sized to handle
the expected fault current.
OPTIONAL
SCHOTTKY
DIODE
V+
OPTIONAL
PROTECTION
RESISTOR
INX
VNX
V+
OPTIONAL
PROTECTION
RESISTOR
If these conditions cannot be guaranteed then precautions
must be implemented to prohibit the current and voltage at
the logic pin and signal pins from exceeding the maximum
ratings of the switch. The following two methods can be used
to provided additional protection to limit the current in the
event that the voltage at a signal pin or logic pin goes below
ground or above the V+ rail.
VCOM
C
GND
100Ω
OPTIONAL
SCHOTTKY
DIODE
NO
COM
NC
FIGURE 7. OVERVOLTAGE PROTECTION
IN
GND
Power-Supply Considerations
FIGURE 6. V+ SERIES RESISTOR FOR ENHANCED ESD AND
LATCH-UP IMMUNITY
7
The ISL54501/ISL54502 construction is typical of most
single supply CMOS analog switches in that they have two
supply pins: V+ and GND. V+ and GND drive the internal
CMOS switches and set their analog voltage limits. Unlike
switches with a 4V maximum supply voltage, the
ISL54501/ISL54502 5.5V maximum supply voltage provides
plenty of room for the 10% tolerance of 3.6V supplies, as
well as room for overshoot and noise spikes.
FN6550.1
August 29, 2007
ISL54501, ISL54502
The minimum recommended supply voltage is 1.8V but the
part will operate with a supply below 1.8V. It is important to
note that the input signal range, switching times, and
ON-resistance degrade at lower supply voltages. Refer to
the “Electrical Specifications” tables starting on page 3 the
and “Typical Performance Curves” starting on page 8 for
details.
V+ and GND also power the internal logic and level shiftier.
The level shiftier converts the input logic levels to switched
V+ and GND signals to drive the analog switch gate
terminals.
An OFF switch behaves like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to output. Off isolation is
the resistance of this signal feedthrough. Figure 16 details
the high off isolation provided by the ISL54501/ISL54502. At
1MHz, off isolation is about 75dB in 50Ω systems,
decreasing approximately 20dB per decade as frequency
increases. Higher load impedances decrease off isolation
due to the voltage divider action of the switch OFF
impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND. One of
these diodes conducts if any analog signal exceeds V+ or
GND.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes
negative in this configuration.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V)
over a supply range of 2V to 3.6V (see Figure 14). At 3.6V
the VIH level is about 0.98V. This is still below the 1.8V
CMOS guaranteed high output minimum level of 1.4V, but
noise margin is reduced.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50Ω systems, the ISL54501/ISL54502 has a -3dB
bandwidth of 350MHz (see Figure 15). The frequency
response is very consistent over a wide V+ range, and for
varying analog signal levels.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or GND. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or GND and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and GND pins constitutes the analogsignal-path leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and V+ or GND.
Typical Performance Curves TA = +25°C, Unless Otherwise Specified
8
6
7
5
V+ = 2.7V
6
5
+85°C
4
V+ = 3V
rON (Ω)
rON (Ω)
V+ = 4.5V
ICOM = 100mA
ICOM = 100mA
4
V+ = 4.5V
3
+25°C
3
-40°C
V+ = 5V
2
2
1
0
1
0
1
2
3
4
VCOM (V)
FIGURE 8. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
8
5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCOM (V)
FIGURE 9. ON-RESISTANCE vs SWITCH VOLTAGE
FN6550.1
August 29, 2007
ISL54501, ISL54502
Typical Performance Curves TA = +25°C, Unless Otherwise Specified (Continued)
14
8
13
+85°C
12
+25°C
10
7
rON (Ω)
5
rON (Ω)
11
6
-40°C
4
+85°C
9
8
+25°C
7
-40°C
6
5
V+ = 2.7V
ICOM = 100mA
3
3
2
2
0
0.5
1.0
1.5
2.0
V+ = 1.8V
ICOM = 10mA
4
2.5
0
0.2
0.4
0.6
0.8
VCOM (V)
1.0
1.2
1.4
1.6
1.8
2.0
VCOM (V)
FIGURE 10. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 11. ON-RESISTANCE vs SWITCH VOLTAGE
130
100
120
-40°C
90
-40°C
110
80
100
70
tON (ns)
80
tOFF (ns)
90
+25°C
70
60
50
40
60
+25°C
50
40
30
+85°C
20
30
10
20
10
1.5
+85°C
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0
6.0
1.5
2.0
2.5
3.0
V+ (V)
4.0
4.5
5.0
5.5
6.0
V+ (V)
FIGURE 12. TURN-ON TIME vs SUPPLY VOLTAGE
FIGURE 13. TURN-OFF TIME vs SUPPLY VOLTAGE
1.4
0
-1
1.2
-2
V+ = 1.8V TO 5.5V
VCOM = 1VP-P
-3
NORMALIZED GAIN (dB)
1.0
VINH AND VINL (V)
3.5
VINH
0.8
VINL
0.6
0.4
-4
-5
-6
-7
-8
-9
-10
-11
0.2
-12
0.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V+ (V)
FIGURE 14. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
9
-13
100k
1M
10M
100M
1G
FREQUENCY (Hz)
FIGURE 15. FREQUENCY RESPONSE
FN6550.1
August 29, 2007
ISL54501, ISL54502
Typical Performance Curves TA = +25°C, Unless Otherwise Specified (Continued)
19
-20
-30
V+ = 1.8V TO 5.5V
-40
14
-50
Q (pC)
(dB)
-60
-70
-80
9
4
-90
V+ = 5V
-100
-1
-110
-120
1k
V+ = 1.8V
10k
100k
1M
10M
FREQUENCY (Hz)
FIGURE 16. OFF ISOLATION
100M
1G
-6
0.0
0.5
1.0
1.5
2.0
2.5
V+ = 3V
3.0
3.5
4.0
4.5
5.0
VCOM (V)
FIGURE 17. CHARGE INJECTION vs SWITCH VOLTAGE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
PROCESS:
Submicron CMOS
10
FN6550.1
August 29, 2007
ISL54501, ISL54502
Ultra Thin Dual Flat No-Lead Plastic Package (UTDFN)
A
E
L6.1.2x1.0A
B
6 LEAD ULTRA THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE
MILLIMETERS
PIN 1
REFERENCE
2X
0.10 C
2X
D
0.10 C
SYMBOL
MIN
NOMINAL
MAX
NOTES
A
0.45
0.50
0.55
-
A1
-
-
0.05
-
A
0.08 C
0.15
0.20
0.25
5
D
0.95
1.00
1.05
-
E
1.15
1.20
1.25
-
0.40 BSC
e
A1 A3
SIDE VIEW
C
SEATING
PLANE
4X
e
DETAIL B
1
5X
L
3
-
b
DETAIL A
0.10 C
7X
0.127 REF
A3
TOP VIEW
-
L
0.30
0.35
0.40
-
L1
0.40
0.45
0.50
-
N
6
2
Ne
3
3
θ
0
-
12
4
L1
Rev. 2 8/06
NOTES:
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
6
4
BOTTOM VIEW
b 6X
0.10 C A B
0.05 C NOTE 3
2. N is the number of terminals.
3. Ne refers to the number of terminals on E side.
4. All dimensions are in millimeters. Angles are in degrees.
5. Dimension b applies to the metallized terminal and is measured
between 0.15mm and 0.30mm from the terminal tip.
0.1x45°
CHAMFER
6. The configuration of the pin #1 identifier is optional, but must be
located within the zone indicated. The pin #1 identifier may be
either a mold or mark feature.
7. Maximum package warpage is 0.05mm.
8. Maximum allowable burrs is 0.076mm in all directions.
9. JEDEC Reference MO-255.
A3
A1
DETAIL A
DETAIL B PIN 1 LEAD
10. For additional information, to assist with the PCB Land Pattern
Design effort, see Intersil Technical Brief TB389.
1.00
1.40
0.20
0.30
0.45
0.35
0.20
0.40
LAND PATTERN
10
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11
FN6550.1
August 29, 2007