CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 ® 18-Mbit QDR II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) 18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Features Functional Description ■ Separate independent read and write data ports ❐ Supports concurrent transactions ■ 550 MHz clock for high bandwidth ■ 4-word burst for reducing address bus frequency ■ Double Data Rate (DDR) interfaces on both read and write ports (data transferred at 1100 MHz) at 550 MHz ■ Available in 2.5 clock cycle latency ■ Two input clocks (K and K) for precise DDR timing ❐ SRAM uses rising edges only ■ Echo clocks (CQ and CQ) simplify data capture in high speed systems ■ Data valid pin (QVLD) to indicate valid data on the output ■ Single multiplexed address input bus latches address inputs for read and write ports ■ Separate port selects for depth expansion ■ Synchronous internally self timed writes ■ QDR® II+ operates with 2.5 cycle read latency when DOFF is asserted HIGH The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 are 1.8V Synchronous Pipelined SRAMs, equipped with QDR II+ architecture. Similar to QDR II architecture, QDR II+ architecture consists of two separate ports: the read port and the write port to access the memory array. The read port has dedicated data outputs to support read operations and the write port has dedicated data inputs to support write operations. QDR II+ architecture has separate data inputs and data outputs to completely eliminate the need to “turn around” the data bus that exists with common I/O devices. Each port is accessed through a common address bus. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Accesses to the QDR II+ read and write ports are completely independent of one another. To maximize data throughput, both read and write ports are equipped with DDR interfaces. Each address location is associated with four 8-bit words (CY7C11611KV18), 9-bit words (CY7C11761KV18), 18-bit words (CY7C11631KV18), or 36-bit words (CY7C11651KV18) that burst sequentially into or out of the device. Because data is transferred into and out of the device on every rising edge of both input clocks (K and K), memory bandwidth is maximized while simplifying system design by eliminating bus “turn arounds”. ■ Operates similar to QDR I device with 1 cycle read latency when DOFF is asserted LOW Depth expansion is accomplished with port selects, which enables each port to operate independently. ■ Available in x8, x9, x18, and x36 configurations ■ Full data coherency, providing most current data All synchronous inputs pass through input registers controlled by the K or K input clocks. All data outputs pass through output registers controlled by the K or K input clocks. Writes are conducted with on-chip synchronous self-timed write circuitry. ■ Core VDD = 1.8V± 0.1V; I/O VDDQ = 1.4V to VDD [1] ❐ Supports both 1.5V and 1.8V I/O supply ■ HSTL inputs and variable drive HSTL output buffers ■ Available in 165-ball FBGA package (13 x 15 x 1.4 mm) ■ Offered in both Pb-free and non Pb-free packages ■ JTAG 1149.1 compatible test access port ■ Phase Locked Loop (PLL) for accurate data placement These devices are down bonded from the 65 nm 72M QDRII+/DDRII+ devices and hence have the same IDD/ISB1 values and JTAG ID code as the equivalent 72M device options. For details refer to the application note AN53189, 65 nm Technology Interim QDRII+/DDRII+ SRAM Device Family Description. Table 1. Selection Guide Configurations Description 550 500 450 400 MHz MHz MHz MHz Unit Maximum Operating Frequency 550 Maximum Operating Current x8 900 830 x9 900 830 CY7C11631KV18 – 1M x 18 x18 920 850 780 710 CY7C11651KV18 – 512K x 36 x36 1310 1210 1100 1000 With Read cycle latency of 2.5 cycles: CY7C11611KV18 – 2M x 8 CY7C11761KV18 – 2M x 9 Cypress Semiconductor Corporation Document Number: 001-53197 Rev. *C • 198 Champion Court • 500 450 400 MHz 760 690 mA 760 690 San Jose, CA 95134-1709 • 408-943-2600 Revised January 31, 2011 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Logic Block Diagram (CY7C11611KV18) DOFF Address Register Read Add. Decode Write Reg 512K x 8 Array K CLK Gen. Write Reg 512K x 8 Array K Write Reg 512K x 8 Array Address Register Write Reg 512K x 8 Array A(18:0) 19 8 Write Add. Decode D[7:0] Control Logic 19 A(18:0) RPS Read Data Reg. CQ 32 VREF WPS NWS[1:0] 16 Control Logic Reg. 16 Reg. CQ Reg. 8 8 8 8 8 Q[7:0] QVLD Logic Block Diagram (CY7C11761KV18) DOFF Address Register Read Add. Decode Write Reg 512K x 9 Array K CLK Gen. Write Reg 512K x 9 Array K Write Reg 512K x 9 Array Address Register Write Reg 512K x 9 Array A(18:0) 19 9 Write Add. Decode D[8:0] Control Logic 19 A(18:0) RPS Read Data Reg. CQ 36 VREF WPS BWS[0] 18 Control Logic 18 Reg. Reg. Reg. 9 9 9 9 CQ 9 Q[8:0] QVLD Note 1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support VDDQ = 1.4V to VDD. Document Number: 001-53197 Rev. *C Page 2 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Logic Block Diagram (CY7C11631KV18) DOFF Address Register Read Add. Decode Write Reg 256K x 18 Array K CLK Gen. Write Reg 256K x 18 Array K Write Reg 256K x 18 Array Address Register Write Reg 256K x 18 Array A(17:0) 18 18 Write Add. Decode D[17:0] Control Logic 18 A(17:0) RPS Read Data Reg. CQ 72 VREF WPS BWS[1:0] 36 Control Logic Reg. 36 Reg. CQ Reg. 18 18 18 18 18 Q[17:0] QVLD Logic Block Diagram (CY7C11651KV18) DOFF Address Register Read Add. Decode Write Reg 128K x 36 Array K CLK Gen. Write Reg 128K x 36 Array K Write Reg 128K x 36 Array Address Register Write Reg 128K x 36 Array A(16:0) 17 36 Write Add. Decode D[35:0] Control Logic 17 A(16:0) RPS Read Data Reg. CQ 144 VREF WPS BWS[3:0] 72 Control Logic 72 Reg. Reg. Reg. 36 36 36 36 CQ 36 Q[35:0] QVLD Document Number: 001-53197 Rev. *C Page 3 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Contents Pin Configuration ............................................................. 5 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout .................. 5 Functional Overview ........................................................ 9 Read Operations ......................................................... 9 Write Operations ......................................................... 9 Byte Write Operations ................................................. 9 Concurrent Transactions ............................................. 9 Depth Expansion ....................................................... 10 Programmable Impedance ........................................ 10 Echo Clocks .............................................................. 10 Valid Data Indicator (QVLD) ...................................... 10 PLL ............................................................................ 10 Application Example ...................................................... 10 IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 13 Disabling the JTAG Feature ...................................... 13 Test Access Port—Test Clock ................................... 13 Test Mode Select (TMS) ........................................... 13 Test Data-In (TDI) ..................................................... 13 Test Data-Out (TDO) ................................................. 13 Performing a TAP Reset ........................................... 13 TAP Registers ........................................................... 13 TAP Instruction Set ................................................... 13 TAP Electrical Characteristics ...................................... 16 Document Number: 001-53197 Rev. *C TAP AC Switching Characteristics ............................... 17 TAP Timing and Test Conditions .................................. 17 Power Up Sequence in QDR II+ SRAM ......................... 20 Power Up Sequence ................................................. 20 PLL Constraints ......................................................... 20 Maximum Ratings ........................................................... 21 Operating Range ............................................................. 21 Neutron Soft Error Immunity ......................................... 21 DC Electrical Characteristics ..................................... 21 AC Electrical Characteristics ..................................... 22 Capacitance .................................................................... 23 Thermal Resistance ........................................................ 23 Switching Characteristics .............................................. 24 Switching Waveforms .................................................... 25 Read/Write/Deselect Sequence ................................ 25 Ordering Information ...................................................... 26 Ordering Code Definitions ......................................... 26 Package Diagram ............................................................ 27 Document History Page ................................................. 28 Sales, Solutions, and Legal Information ...................... 29 Worldwide Sales and Design Support ....................... 29 Products .................................................................... 29 PSoC Solutions ......................................................... 29 Page 4 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Pin Configuration The pin configuration for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows.[2] 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C11611KV18 (2M x 8) 1 2 3 4 A CQ B NC NC/72M A WPS NC NC A C NC NC NC VSS D NC D4 NC VSS 5 6 7 8 9 10 11 NWS1 K NC/144M NC/288M K NWS0 RPS A NC/36M CQ A NC NC Q3 A NC A VSS NC NC D3 VSS VSS VSS VSS NC NC NC E NC NC Q4 VDDQ VSS VSS VSS VDDQ NC D2 Q2 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC G NC D5 Q5 VDDQ VDD VSS VDD VDDQ NC NC NC H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q1 D1 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q6 D6 VDDQ VSS VSS VSS VDDQ NC NC Q0 M NC NC NC VSS VSS VSS VSS VSS NC NC D0 N NC D7 NC VSS A A A VSS NC NC NC P NC NC Q7 A A QVLD A A NC NC NC R TDO TCK A A A NC A A A TMS TDI 1 2 3 4 5 6 7 8 9 10 11 A CQ NC/72M A WPS NC K NC/144M RPS A NC/36M CQ B NC NC NC A NC/288M K BWS0 A NC NC Q4 C NC NC NC VSS A NC A VSS NC NC D4 D NC D5 NC VSS VSS VSS VSS VSS NC NC NC E NC NC Q5 VDDQ VSS VSS VSS VDDQ NC D3 Q3 F NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC CY7C11761KV18 (2M x 9) G NC D6 Q6 VDDQ VDD VSS VDD VDDQ NC NC NC H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC NC VDDQ VDD VSS VDD VDDQ NC Q2 D2 K NC NC NC VDDQ VDD VSS VDD VDDQ NC NC NC L NC Q7 D7 VDDQ VSS VSS VSS VDDQ NC NC Q1 M NC NC NC VSS VSS VSS VSS VSS NC NC D1 N NC D8 NC VSS A A A VSS NC NC NC P NC NC Q8 A A QVLD A A NC D0 Q0 R TDO TCK A A A NC A A A TMS TDI Note 2. NC/36M, NC/72M, NC/144M, and NC/288M are not connected to the die and can be tied to any voltage level. Document Number: 001-53197 Rev. *C Page 5 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Pin Configuration (continued) The pin configuration for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows.[2] 165-Ball FBGA (13 x 15 x 1.4 mm) Pinout CY7C11631KV18 (1M x 18) 1 2 3 NC/144M NC/36M 4 5 6 7 8 9 10 11 A CQ WPS BWS1 K NC/288M RPS A NC/72M CQ B NC Q9 D9 A NC K BWS0 A NC NC Q8 C NC NC D10 VSS A NC A VSS NC Q7 D8 D NC D11 Q10 VSS VSS VSS VSS VSS NC NC D7 E NC NC Q11 VDDQ VSS VSS VSS VDDQ NC D6 Q6 F NC Q12 D12 VDDQ VDD VSS VDD VDDQ NC NC Q5 G NC D13 Q13 VDDQ VDD VSS VDD VDDQ NC NC D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J NC NC D14 VDDQ VDD VSS VDD VDDQ NC Q4 D4 K NC NC Q14 VDDQ VDD VSS VDD VDDQ NC D3 Q3 L NC Q15 D15 VDDQ VSS VSS VSS VDDQ NC NC Q2 M NC NC D16 VSS VSS VSS VSS VSS NC Q1 D2 N NC D17 Q16 VSS A A A VSS NC NC D1 P NC NC Q17 A A QVLD A A NC D0 Q0 R TDO TCK A A A NC A A A TMS TDI 1 2 3 4 5 6 7 8 9 10 11 WPS BWS2 K BWS1 RPS D18 A BWS3 K BWS0 A CY7C11651KV18 (512K x 36) A CQ NC/288M NC/72M B Q27 Q18 C D27 Q28 D19 VSS A NC A VSS D D28 D20 Q19 VSS VSS VSS VSS VSS E Q29 D29 Q20 VDDQ VSS VSS VSS VDDQ F Q30 Q21 D21 VDDQ VDD VSS VDD VDDQ NC/36M NC/144M D17 CQ Q17 Q8 D16 Q7 D8 Q16 D15 D7 Q15 D6 Q6 D14 Q14 Q5 G D30 D22 Q22 VDDQ VDD VSS VDD VDDQ Q13 D13 D5 H DOFF VREF VDDQ VDDQ VDD VSS VDD VDDQ VDDQ VREF ZQ J D31 Q31 D23 VDDQ VDD VSS VDD VDDQ D12 Q4 D4 K Q32 D32 Q23 VDDQ VDD VSS VDD VDDQ Q12 D3 Q3 L Q33 Q24 D24 VDDQ VSS VSS VSS VDDQ D11 Q11 Q2 M D33 Q34 D25 VSS VSS VSS VSS VSS D10 Q1 D2 N D34 D26 Q25 VSS A A A VSS Q10 D9 D1 P Q35 D35 Q26 A A QVLD A A Q9 D0 Q0 R TDO TCK A A A NC A A A TMS TDI Document Number: 001-53197 Rev. *C Page 6 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Table 2. Pin Definitions Pin Name I/O Pin Description D[x:0] InputData Input Signals. Sampled on the rising edge of K and K clocks when valid write operations are active. Synchronous CY7C11611KV18 D[7:0] CY7C11761KV18 D[8:0] CY7C11631KV18 D[17:0] CY7C11651KV18 D[35:0] WPS InputWrite Port Select Active LOW. Sampled on the rising edge of the K clock. When asserted active, a Synchronous write operation is initiated. Deasserting deselects the write port. Deselecting the write port ignores D[x:0]. NWS0, NWS1, InputNibble Write Select 0, 1 Active LOW (CY7C11611KV18 Only). Sampled on the rising edge of the K Synchronous and K clocks when write operations are active. Used to select which nibble is written into the device during the current portion of the write operations. NWS0 controls D[3:0] and NWS1 controls D[7:4]. All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write Select ignores the corresponding nibble of data and it is not written into the device. BWS0, BWS1, BWS2, BWS3 InputByte Write Select 0, 1, 2 and 3 Active LOW. Sampled on the rising edge of the K and K clocks when Synchronous write operations are active. Used to select which byte is written into the device during the current portion of the write operations. Bytes not written remain unaltered. CY7C11761KV18 BWS0 controls D[8:0] CY7C11631KV18 BWS0 controls D[8:0] and BWS1 controls D[17:9]. CY7C11651KV18 BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18] and BWS3 controls D[35:27]. All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select ignores the corresponding byte of data and it is not written into the device. A InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations. These Synchronous address inputs are multiplexed for both read and write operations. Internally, the device is organized as 2M x 8 (4 arrays each of 512K x 8) for CY7C11611KV18, 2M x 9 (4 arrays each of 512K x 9) for CY7C11761KV18, 1M x 18 (4 arrays each of 256K x 18) for CY7C11631KV18 and 512K x 36 (4 arrays each of 128K x 36) for CY7C11651KV18. Therefore, only 19 address inputs are needed to access the entire memory array of CY7C11611KV18 and CY7C11761KV18, 18 address inputs for CY7C11631KV18 and 17 address inputs for CY7C11651KV18. These inputs are ignored when the appropriate port is deselected. Q[x:0] OutputsData Output Signals. These pins drive out the requested data when the read operation is active. Valid Synchronous data is driven out on the rising edge of the K and K clocks during read operations. On deselecting the read port, Q[x:0] are automatically tristated. CY7C11611KV18 Q[7:0] CY7C11761KV18 Q[8:0] CY7C11631KV18 Q[17:0] CY7C11651KV18 Q[35:0] RPS InputRead Port Select Active LOW. Sampled on the rising edge of positive input clock (K). When active, a Synchronous read operation is initiated. Deasserting deselects the read port. When deselected, the pending access is allowed to complete and the output drivers are automatically tristated following the next rising edge of the K clock. Each read access consists of a burst of four sequential transfers. QVLD Valid output indicator Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and CQ. K Input Clock Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device and to drive out data through Q[x:0]. All accesses are initiated on the rising edge of K. K Input Clock Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device and to drive out data through Q[x:0]. CQ Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock (K) of the QDR II+. The timings for the echo clocks are shown in the Switching Characteristics on page 24. CQ Echo Clock Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input clock (K) of the QDR II+.The timings for the echo clocks are shown in the Switching Characteristics on page 24. Document Number: 001-53197 Rev. *C Page 7 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Table 2. Pin Definitions (continued) Pin Name I/O Pin Description ZQ Input Output Impedance Matching Input. This input is used to tune the device outputs to the system data bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor connected between ZQ and ground. Alternatively, this pin can be connected directly to VDDQ, which enables the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected. DOFF Input PLL Turn Off Active LOW. Connecting this pin to ground turns off the PLL inside the device. The timings in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin can be connected to a pull up through a 10 K or less pull up resistor. The device behaves in QDR I mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to 167 MHz with QDR I timing. TDO Output TCK Input TCK Pin for JTAG. TDI Input TDI Pin for JTAG. TMS Input TMS Pin for JTAG. NC N/A Not Connected to the Die. Can be tied to any voltage level. NC/144M N/A Not Connected to the Die. Can be tied to any voltage level. NC/288M N/A Not Connected to the Die. Can be tied to any voltage level. VREF VDD VSS VDDQ InputReference TDO for JTAG. Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC measurement points. Power Supply Power Supply Inputs to the Core of the Device. Ground Ground for the Device. Power Supply Power Supply Inputs for the Outputs of the Device. Document Number: 001-53197 Rev. *C Page 8 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Functional Overview The CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, CY7C11651KV18 are synchronous pipelined Burst SRAMs equipped with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required. By having separate read and write ports, the QDR II+ completely eliminates the need to “turn around” the data bus and avoids any possible data contention, thereby simplifying system design. Each access consists of four 8-bit data transfers in the case of CY7C11611KV18, four 9-bit data transfers in the case of CY7C11761KV18, four 18-bit data transfers in the case of CY7C11631KV18, and four 36-bit data transfers in the case of CY7C11651KV18, in two clock cycles. These devices operate with a read latency of two and half cycles when DOFF pin is tied HIGH. When DOFF pin is set LOW or connected to VSS, then device behaves in QDR I mode with a read latency of one clock cycle. Accesses for both ports are initiated on the positive input clock (K). All synchronous input and output timing are referenced from the rising edge of the input clocks (K and K). All synchronous data inputs (D[x:0]) pass through input registers controlled by the input clocks (K and K). All synchronous data outputs (Q[x:0]) also pass through output registers controlled by the rising edge of the input clocks (K and K). transferred out of the device on every rising edge of the input clocks (K and K). When the read port is deselected, the CY7C11631KV18 first completes the pending read transactions. Synchronous internal circuitry automatically tristates the outputs following the next rising edge of the negative input clock (K). This enables a seamless transition between devices without the insertion of wait states in a depth expanded memory. Write Operations Write operations are initiated by asserting WPS active at the rising edge of the positive input clock (K). On the following K clock rise, the data presented to D[17:0] is latched and stored into the lower 18-bit write data register, provided BWS[1:0] are both asserted active. On the subsequent rising edge of the negative input clock (K) the information presented to D[17:0] is also stored into the write data register, provided BWS[1:0] are both asserted active. This process continues for one more cycle until four 18-bit words (a total of 72 bits) of data are stored in the SRAM. The 72 bits of data are then written into the memory array at the specified location. Therefore, write accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second write request. Write accesses can be initiated on every other rising edge of the positive input clock (K). Doing so pipelines the data flow such that 18 bits of data can be transferred into the device on every rising edge of the input clocks (K and K). All synchronous control (RPS, WPS, NWS[x:0], BWS[x:0]) inputs pass through input registers controlled by the rising edge of the input clocks (K and K). When deselected, the write port ignores all inputs after the pending write operations have been completed. CY7C11631KV18 is described in the following sections. The same basic descriptions apply to CY7C11611KV18, CY7C11761KV18 and CY7C11651KV18. Byte Write Operations Read Operations The CY7C11631KV18 is organized internally as four arrays of 256K x 18. Accesses are completed in a burst of four sequential 18-bit data words. Read operations are initiated by asserting RPS active at the rising edge of the positive input clock (K). The address presented to the address inputs is stored in the read address register. Following the next two K clock rise, the corresponding lowest order 18-bit word of data is driven onto the Q[17:0] using K as the output timing reference. On the subsequent rising edge of K, the next 18-bit data word is driven onto the Q[17:0]. This process continues until all four 18-bit data words have been driven out onto Q[17:0]. The requested data is valid 0.45 ns from the rising edge of the input clock (K or K). To maintain the internal logic, each read access must be allowed to complete. Each read access consists of four 18-bit data words and takes two clock cycles to complete. Therefore, read accesses to the device cannot be initiated on two consecutive K clock rises. The internal logic of the device ignores the second read request. Read accesses can be initiated on every other K clock rise. Doing so pipelines the data flow such that data is Document Number: 001-53197 Rev. *C Byte write operations are supported by the CY7C11631KV18. A write operation is initiated as described in the Write Operations section. The bytes that are written are determined by BWS0 and BWS1, which are sampled with each set of 18-bit data words. Asserting the appropriate Byte Write Select input during the data portion of a write latches the data being presented and writes it into the device. Deasserting the Byte Write Select input during the data portion of a write enables the data stored in the device for that byte to remain unaltered. This feature can be used to simplify read, modify, or write operations to a byte write operation. Concurrent Transactions The read and write ports on the CY7C11631KV18 operates completely independently of one another. As each port latches the address inputs on different clock edges, the user can read or write to any location, regardless of the transaction on the other port. If the ports access the same location when a read follows a write in successive clock cycles, the SRAM delivers the most recent information associated with the specified address location. This includes forwarding data from a write cycle that was initiated on the previous K clock rise. Page 9 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Read access and write access must be scheduled such that one transaction is initiated on any clock cycle. If both ports are selected on the same K clock rise, the arbitration depends on the previous state of the SRAM. If both ports are deselected, the read port takes priority. If a read was initiated on the previous cycle, the write port takes priority (as read operations cannot be initiated on consecutive cycles). If a write was initiated on the previous cycle, the read port takes priority (as write operations cannot be initiated on consecutive cycles). Therefore, asserting both port selects active from a deselected state results in alternating read or write operations being initiated, with the first access being a read. Depth Expansion The CY7C11631KV18 has a port select input for each port. This enables easy depth expansion. Both port selects are sampled on the rising edge of the positive input clock only (K). Each port select input can deselect the specified port. Deselecting a port does not affect the other port. All pending transactions (read and write) are completed before the device is deselected. Programmable Impedance An external resistor, RQ, must be connected between the ZQ pin on the SRAM and VSS to allow the SRAM to adjust its output driver impedance. The value of RQ must be 5X the value of the intended line impedance driven by the SRAM, the allowable range of RQ to guarantee impedance matching with a tolerance of ±15% is between 175 and 350, with VDDQ = 1.5V. The output impedance is adjusted every 1024 cycles upon power up to account for drifts in supply voltage and temperature. Echo Clocks Echo clocks are provided on the QDR II+ to simplify data capture on high speed systems. Two echo clocks are generated by the QDR II+. CQ is referenced with respect to K and CQ is referenced with respect to K. These are free-running clocks and are synchronized to the input clock of the QDR II+. The timing for the echo clocks is shown in the Switching Characteristics on page 24. Valid Data Indicator (QVLD) QVLD is provided on the QDR II+ to simplify data capture on high speed systems. The QVLD is generated by the QDR II+ device along with data output. This signal is also edge-aligned with the echo clock and follows the timing of any data pin. This signal is asserted half a cycle before valid data arrives. PLL These chips use a PLL that is designed to function between 120 MHz and the specified maximum clock frequency. During power up, when the DOFF is tied HIGH, the PLL is locked after 20 s of stable clock. The PLL can also be reset by slowing or stopping the input clocks K and K for a minimum of 30 ns. However, it is not necessary to reset the PLL to lock to the desired frequency. The PLL automatically locks 20 s after a stable clock is presented. The PLL may be disabled by applying ground to the DOFF pin. When the PLL is turned off, the device behaves in QDR I mode (with one cycle latency and a longer access time). For more information, refer to the application note, PLL Considerations in QDRII/DDRII/QDRII+/DDRII+. Application Example Figure 1 shows two QDR II+ used in an application. Figure 1. Application Example Vt R DATA IN DATA OUT Address ZQ SRAM #1 CQ/CQ Q D A RPS WPS BWS K K RQ = 250 ohms SRAM #2 RQ = 250 ohms CQ/CQ Q RPS WPS BWS K K D A R R BUS MASTER RPS (CPU or ASIC) WPS ZQ Vt Vt BWS CLKIN1/CLKIN1 CLKIN2/CLKIN2 Source K Source K R Document Number: 001-53197 Rev. *C R = 50ohms, Vt = VDDQ /2 Page 10 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 The truth table for CY7C11611KV18, CY7C11761KV18, CY7C11631KV18, and CY7C11651KV18 follows. [3, 4, 5, 6, 7, 8] Table 3. Truth Table Operation K RPS WPS [9] DQ DQ DQ DQ [10] D(A) at K(t + 1) D(A + 1) at K(t + 1) D(A + 2) at K(t + 2) D(A + 3) at K(t + 2) Write Cycle: Load address on the rising edge of K; input write data on two consecutive K and K rising edges. L-H H Read Cycle: (2.5 cycle Latency) Load address on the rising edge of K; wait two and half cycles; read data on two consecutive K and K rising edges. L-H L [10] X Q(A) at K(t + 2) Q(A + 1) at K(t + 3) Q(A + 2) at K(t + 3) Q(A + 3) at K(t + 4) NOP: No Operation L-H H H D=X Q = High Z D=X Q = High Z D=X Q = High Z D=X Q = High Z Stopped X X Previous State Previous State Previous State Previous State Standby: Clock Stopped L The write cycle description table for CY7C11611KV18 and CY7C11631KV18 follows. [3, 11] Table 4. Write Cycle Descriptions BWS0/ BWS1/ K K L L–H – L L – L H L–H L H – H L L–H H L – H H L–H H H – NWS0 NWS1 L Comments During the data portion of a write sequence CY7C11611KV18 both nibbles (D[7:0]) are written into the device. CY7C11631KV18 both bytes (D[17:0]) are written into the device. L-H During the data portion of a write sequence CY7C11611KV18 both nibbles (D[7:0]) are written into the device. CY7C11631KV18 both bytes (D[17:0]) are written into the device. – During the data portion of a write sequence CY7C11611KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered. CY7C11631KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. L–H During the data portion of a write sequence CY7C11611KV18 only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered. CY7C11631KV18 only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered. – During the data portion of a write sequence CY7C11611KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered. CY7C11631KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. L–H During the data portion of a write sequence CY7C11611KV18 only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered. CY7C11631KV18 only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered. – No data is written into the devices during this portion of a write operation. L–H No data is written into the devices during this portion of a write operation. Notes 3. X = “Don't Care,” H = Logic HIGH, L = Logic LOW, represents rising edge. 4. Device powers up deselected with the outputs in a tristate condition. 5. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A + 3 represents the address sequence in the burst. 6. “t” represents the cycle at which a read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the “t” clock cycle. 7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges as well. 8. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically. 9. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation. 10. This signal was HIGH on previous K clock rise. Initiating consecutive read or write operations on consecutive K clock rises is not permitted. The device ignores the second read or write request. 11. Is based on a write cycle that was initiated in accordance with Table 4. NWS0, NWS1, BWS0, BWS1, BWS2, and BWS3 can be altered on different portions of a write cycle, as long as the setup and hold requirements are achieved. Document Number: 001-53197 Rev. *C Page 11 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 The write cycle description table for CY7C11761KV18 follows. [3, 11] Table 5. Write Cycle Descriptions BWS0 K K Comments L L–H – During the data portion of a write sequence, the single byte (D[8:0]) is written into the device. L – L–H During the data portion of a write sequence, the single byte (D[8:0]) is written into the device. H L–H – No data is written into the device during this portion of a write operation. H – L–H No data is written into the device during this portion of a write operation. The write cycle description table for CY7C11651KV18 follows. [3, 11] Table 6. Write Cycle Descriptions BWS0 BWS1 BWS2 BWS3 K K Comments L L L L L–H – During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. L L L L – L H H H L–H L H H H – H L H H L–H H L H H – H H L H L–H H H L H – H H H L L–H H H H L – H H H H L–H H H H H – Document Number: 001-53197 Rev. *C L–H During the data portion of a write sequence, all four bytes (D[35:0]) are written into the device. – During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. L–H During the data portion of a write sequence, only the lower byte (D[8:0]) is written into the device. D[35:9] remains unaltered. – During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[17:9]) is written into the device. D[8:0] and D[35:18] remains unaltered. – During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[26:18]) is written into the device. D[17:0] and D[35:27] remains unaltered. – During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. L–H During the data portion of a write sequence, only the byte (D[35:27]) is written into the device. D[26:0] remains unaltered. – No data is written into the device during this portion of a write operation. L–H No data is written into the device during this portion of a write operation. Page 12 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 IEEE 1149.1 Serial Boundary Scan (JTAG) Instruction Register These SRAMs incorporate a serial boundary scan Test Access Port (TAP) in the FBGA package. This part is fully compliant with IEEE Standard #1149.1-2001. The TAP operates using JEDEC standard 1.8V I/O logic levels. Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO pins, as shown in Figure 3 on page 16. Upon power up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state, as described in the previous section. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW (VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternatively be connected to VDD through a pull up resistor. TDO must be left unconnected. Upon power up, the device comes up in a reset state, which does not interfere with the operation of the device. Test Access Port—Test Clock The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Test Mode Select (TMS) The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. This pin may be left unconnected if the TAP is not used. The pin is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI pin is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure 2 on page 15. TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) on any register. Test Data-Out (TDO) When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board level serial test path. Bypass Register To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between TDI and TDO pins. This enables shifting of data through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. Boundary Scan Register The boundary scan register is connected to all of the input and output pins on the SRAM. Several No Connect (NC) pins are also included in the scan register to reserve pins for higher density devices. The boundary scan register is loaded with the contents of the RAM input and output ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO pins when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions can be used to capture the contents of the input and output ring. Table 10 on page 19 shows the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The TDO output pin is used to serially clock data out from the registers. The output is active, depending upon the current state of the TAP state machine (see Table 9 on page 18). The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in Table 7 on page 18. Performing a TAP Reset TAP Instruction Set A Reset is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This Reset does not affect the operation of the SRAM and can be performed while the SRAM is operating. At power up, the TAP is reset internally to ensure that TDO comes up in a High Z state. Eight different instructions are possible with the three-bit instruction register. All combinations are listed in Table 9 on page 18. Three of these instructions are listed as RESERVED and must not be used. The other five instructions are described in this section in detail. TAP Registers Registers are connected between the TDI and TDO pins to scan the data in and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction registers. Data is serially loaded into the TDI pin on the rising edge of TCK. Data is output on the TDO pin on the falling edge of TCK. Document Number: 001-53197 Rev. *C Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO pins. To execute the instruction after it is shifted in, the TAP controller must be moved into the Update-IR state. Page 13 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 IDCODE The IDCODE instruction loads a vendor-specific, 32-bit code into the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register at power up or whenever the TAP controller is supplied a Test-Logic-Reset state. SAMPLE Z The SAMPLE Z instruction connects the boundary scan register between the TDI and TDO pins when the TAP controller is in a Shift-DR state. The SAMPLE Z command puts the output bus into a High Z state until the next command is supplied during the Update IR state. SAMPLE/PRELOAD SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the input and output pins is captured in the boundary scan register. PRELOAD places an initial data pattern at the latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation. The shifting of data for the SAMPLE and PRELOAD phases can occur concurrently when required, that is, while the data captured is shifted out, the preloaded data can be shifted in. BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. EXTEST The EXTEST instruction drives the preloaded data out through the system output pins. This instruction also connects the boundary scan register for serial access between the TDI and TDO in the Shift-DR controller state. EXTEST OUTPUT BUS TRISTATE IEEE Standard 1149.1 mandates that the TAP controller be able to put the output bus into a tristate mode. The user must be aware that the TAP controller clock can only operate at a frequency up to 20 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output undergoes a transition. The TAP may then try to capture a signal while in transition (metastable state). This does not harm the device, but there is no guarantee as to the value that is captured. Repeatable results may not be possible. The boundary scan register has a special bit located at bit #108. When this scan cell, called the “extest output bus tristate,” is latched into the preload register during the Update-DR state in the TAP controller, it directly controls the state of the output (Q-bus) pins, when the EXTEST is entered as the current instruction. When HIGH, it enables the output buffers to drive the output bus. When LOW, this bit places the output bus into a High Z condition. To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller's capture setup plus hold times (tCS and tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still possible to capture all other signals and simply ignore the value of the CK and CK captured in the boundary scan register. This bit can be set by entering the SAMPLE/PRELOAD or EXTEST command, and then shifting the desired bit into that cell, during the Shift-DR state. During Update-DR, the value loaded into that shift-register cell latches into the preload register. When the EXTEST instruction is entered, this bit directly controls the output Q-bus pins. Note that this bit is preset HIGH to enable the output when the device is powered up, and also when the TAP controller is in the Test-Logic-Reset state. After the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO pins. Reserved Document Number: 001-53197 Rev. *C These instructions are not implemented but are reserved for future use. Do not use these instructions. Page 14 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 The state diagram for the TAP controller follows. [12] Figure 2. TAP Controller State Diagram 1 TEST-LOGIC RESET 0 0 TEST-LOGIC/ IDLE 1 SELECT DR-SCAN 1 1 SELECT IR-SCAN 0 0 1 1 CAPTURE-DR CAPTURE-IR 0 0 SHIFT-DR 0 SHIFT-IR 1 1 EXIT1-DR 1 EXIT1-IR 0 0 PAUSE-IR 1 0 1 EXIT2-DR 0 EXIT2-IR 1 1 UPDATE-IR UPDATE-DR 1 1 0 PAUSE-DR 0 0 0 1 0 Note 12. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document Number: 001-53197 Rev. *C Page 15 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Figure 3. TAP Controller Block Diagram 0 Bypass Register 2 Selection Circuitry TDI 1 0 Selection Circuitry Instruction Register 31 30 29 . . 2 1 0 1 0 TDO Identification Register 108 . . . . 2 Boundary Scan Register TCK TAP Controller TMS TAP Electrical Characteristics Over the Operating Range [13, 14, 15] Parameter Description Test Conditions Min Max Unit VOH1 Output HIGH Voltage IOH =2.0 mA 1.4 V VOH2 Output HIGH Voltage IOH =100 A 1.6 V VOL1 Output LOW Voltage IOL = 2.0 mA 0.4 V VOL2 Output LOW Voltage IOL = 100 A 0.2 V VIH Input HIGH Voltage VIL Input LOW Voltage IX Input and Output Load Current 0.65VDD VDD + 0.3 GND VI VDD V –0.3 0.35VDD V –5 5 A Notes 13. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the DC Electrical Characteristics Table. 14. Overshoot: VIH(AC) < VDDQ + 0.35V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > 0.3V (Pulse width less than tCYC/2). 15. All Voltage referenced to Ground. Document Number: 001-53197 Rev. *C Page 16 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 TAP AC Switching Characteristics Over the Operating Range [16, 17] Parameter Description Min Max Unit tTCYC TCK Clock Cycle Time tTF TCK Clock Frequency tTH TCK Clock HIGH 20 ns tTL TCK Clock LOW 20 ns tTMSS TMS Setup to TCK Clock Rise 5 ns tTDIS TDI Setup to TCK Clock Rise 5 ns tCS Capture Setup to TCK Rise 5 ns tTMSH TMS Hold after TCK Clock Rise 5 ns tTDIH TDI Hold after Clock Rise 5 ns tCH Capture Hold after Clock Rise 5 ns 50 ns 20 MHz Setup Times Hold Times Output Times tTDOV TCK Clock LOW to TDO Valid tTDOX TCK Clock LOW to TDO Invalid 10 0 ns ns TAP Timing and Test Conditions Figure 4 shows the TAP timing and test conditions. [17] Figure 4. TAP Timing and Test Conditions 0.9V ALL INPUT PULSES 1.8V 50 0.9V TDO 0V Z0 = 50 (a) CL = 20 pF tTH GND tTL Test Clock TCK tTCYC tTMSH tTMSS Test Mode Select TMS tTDIS tTDIH Test Data In TDI Test Data Out TDO tTDOV tTDOX Notes 16. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register. 17. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document Number: 001-53197 Rev. *C Page 17 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Table 7. Identification Register Definitions Instruction Field Value CY7C11611KV18 CY7C11761KV18 CY7C11631KV18 CY7C11651KV18 000 000 000 000 Revision Number (31:29) Description Version number. Cypress Device ID 11010010001000100 11010010001001100 11010010001010100 11010010001100100 Defines the type of (28:12) SRAM. Cypress JEDEC ID (11:1) 00000110100 00000110100 00000110100 00000110100 1 1 1 1 ID Register Presence (0) Allows unique identification of SRAM vendor. Indicates the presence of an ID register. Table 8. Scan Register Sizes Register Name Bit Size Instruction 3 Bypass 1 ID 32 Boundary Scan 109 Table 9. Instruction Codes Instruction Code Description EXTEST 000 Captures the input and output ring contents. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operation. SAMPLE Z 010 Captures the input and output contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures the input and output ring contents. Places the boundary scan register between TDI and TDO. Does not affect the SRAM operation. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document Number: 001-53197 Rev. *C Page 18 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Table 10. Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J 1 6P 29 9G 57 5B 85 2J 2 6N 30 11F 58 5A 86 3K 3 7P 31 11G 59 4A 87 3J 4 7N 32 9F 60 5C 88 2K 5 7R 33 10F 61 4B 89 1K 6 8R 34 11E 62 3A 90 2L 7 8P 35 10E 63 2A 91 3L 8 9R 36 10D 64 1A 92 1M 9 11P 37 9E 65 2B 93 1L 10 10P 38 10C 66 3B 94 3N 11 10N 39 11D 67 1C 95 3M 12 9P 40 9C 68 1B 96 1N 13 10M 41 9D 69 3D 97 2M 14 11N 42 11B 70 3C 98 3P 15 9M 43 11C 71 1D 99 2N 16 9N 44 9B 72 2C 100 2P 17 11L 45 10B 73 3E 101 1P 18 11M 46 11A 74 2D 102 3R 19 9L 47 10A 75 2E 103 4R 20 10L 48 9A 76 1E 104 4P 21 11K 49 8B 77 2F 105 5P 22 10K 50 7C 78 3F 106 5N 23 9J 51 6C 79 1G 107 5R 108 Internal 24 9K 52 8A 80 1F 25 10J 53 7A 81 3G 26 11J 54 7B 82 2G 27 11H 55 6B 83 1H Document Number: 001-53197 Rev. *C Page 19 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Power Up Sequence in QDR II+ SRAM PLL Constraints QDR II+ SRAMs must be powered up and initialized in a predefined manner to prevent undefined operations. ■ PLL uses K clock as its synchronizing input. The input must have low phase jitter, which is specified as tKC Var. ■ The PLL functions at frequencies down to 120 MHz. ■ If the input clock is unstable and the PLL is enabled, then the PLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide 20 s of stable clock to relock to the desired clock frequency. Power Up Sequence ■ Apply power and drive DOFF either HIGH or LOW (All other inputs can be HIGH or LOW). ❐ Apply VDD before VDDQ. ❐ Apply VDDQ before VREF or at the same time as VREF. ❐ Drive DOFF HIGH. ■ Provide stable DOFF (HIGH), power and clock (K, K) for 20 s to lock the PLL. ~ ~ Figure 5. Power Up Waveforms K K ~ ~ Unstable Clock > 20Ps Stable clock Start Normal Operation Clock Start (Clock Starts after V DD / V DDQ Stable) VDD / VDDQ DOFF Document Number: 001-53197 Rev. *C V DD / V DDQ Stable (< +/- 0.1V DC per 50ns ) Fix HIGH (or tie to VDDQ) Page 20 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Maximum Ratings Neutron Soft Error Immunity Exceeding maximum ratings may shorten the useful life of the device. User guidelines are not tested. Test Parameter Description Conditions Typ Max* Unit Storage Temperature ............................... –65 °C to +150 °C LSBU Logical Single-Bit Upsets 25 °C 197 216 FIT/ Mb LMBU Logical Multi-Bit Upsets 25 °C 0 0.01 FIT/ Mb Single Event Latch up 85 °C 0 0.1 FIT/ Dev Ambient Temperature with Power Applied –55 °C to +125 °C Supply Voltage on VDD Relative to GND ........–0.5V to +2.9V Supply Voltage on VDDQ Relative to GND ...... –0.5V to +VDD DC Applied to Outputs in High Z ........ –0.5V to VDDQ + 0.3V DC Input Voltage [14] .............................. –0.5V to VDD + 0.3V SEL Current into Outputs (LOW)......................................... 20 mA Static Discharge Voltage (MIL-STD-883, M. 3015).. > 2001V Latch Up Current ................................................... > 200 mA Operating Range Range Commercial Industrial Ambient Temperature (TA) VDD [18] VDDQ [18] 0 °C to +70 °C 1.8 ± 0.1V 1.4V to VDD –40 °C to +85 °C * No LMBU or SEL events occurred during testing; this column represents a statistical 2, 95% confidence limit calculation. For more details refer to Application Note AN 54908 “Accelerated Neutron SER Testing and Calculation of Terrestrial Failure Rates” Electrical Characteristics DC Electrical Characteristics Over the Operating Range [15] Parameter VDD VDDQ VOH VOL VOH(LOW) VOL(LOW) VIH VIL IX IOZ VREF Description Power Supply Voltage I/O Supply Voltage Output HIGH Voltage Output LOW Voltage Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Current Output Leakage Current Input Reference Voltage [21] Test Conditions Note 19 Note 20 IOH =0.1 mA, Nominal Impedance IOL = 0.1 mA, Nominal Impedance GND VI VDDQ GND VI VDDQ, Output Disabled Typical Value = 0.75V Min Typ Max Unit 1.7 1.8 1.9 V 1.4 1.5 VDD V VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VDDQ/2 – 0.12 VDDQ/2 + 0.12 V VDDQ – 0.2 VDDQ V VSS 0.2 V VREF + 0.1 VDDQ + 0.15 V –0.15 VREF – 0.1 V 2 2 A 2 2 A 0.68 0.75 0.95 V Notes 18. Power up: Assumes a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD. 19. Output are impedance controlled. IOH = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. 20. Output are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. 21. VREF (min) = 0.68V or 0.46VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54VDDQ, whichever is smaller. Document Number: 001-53197 Rev. *C Page 21 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 DC Electrical Characteristics (continued) Over the Operating Range [15] Parameter IDD [22] Description VDD Operating Supply Test Conditions VDD = Max, 550 MHz IOUT = 0 mA, f = fMAX = 1/tCYC 500 MHz 450 MHz 400 MHz ISB1 Automatic Power Down Current Max VDD, Both Ports Deselected, VIN VIH or VIN VIL f = fMAX = 1/tCYC, Inputs Static 550 MHz 500 MHz 450 MHz 400 MHz Min Typ (x8) Max 900 (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) 900 920 1310 830 830 850 1210 760 760 (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) (x8) (x9) (x18) (x36) 780 1100 690 690 710 1000 380 380 380 380 360 360 360 360 340 340 340 340 320 320 320 320 Unit mA mA mA mA mA mA mA mA AC Electrical Characteristics Over the Operating Range [14] Parameter Description Test Conditions Min Typ Max Unit VIH Input HIGH Voltage VREF + 0.2 – VDDQ + 0.24 V VIL Input LOW Voltage –0.24 – VREF – 0.2 V Note 22. The operation current is calculated with 50% read cycle and 50% write cycle. Document Number: 001-53197 Rev. *C Page 22 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Capacitance Tested initially and after any design or process change that may affect these parameters. Parameter Description Test Conditions TA = 25 C, f = 1 MHz, VDD = 1.8V, VDDQ = 1.5V CIN Input Capacitance CO Output Capacitance Max Unit 4 pF 4 pF 165 FBGA Package Unit 13.7 °C/W 3.73 °C/W Thermal Resistance Tested initially and after any design or process change that may affect these parameters. Parameter Description JA Thermal Resistance (Junction to Ambient) JC Thermal Resistance (Junction to Case) Test Conditions Test conditions follow standard test methods and procedures for measuring thermal impedance, in accordance with EIA/JESD51. Figure 6. AC Test Loads and Waveforms VREF = 0.75V VREF 0.75V VREF OUTPUT Z0 = 50 Device Under Test ZQ RL = 50 VREF = 0.75V R = 50 ALL INPUT PULSES 1.25V 0.75V OUTPUT Device Under Test ZQ RQ = 250 (a) 0.75V INCLUDING JIG AND SCOPE 5 pF [23] 0.25V Slew Rate = 2 V/ns RQ = 250 (b) Note 23. Unless otherwise noted, test conditions are based on signal transition time of 2V/ns, timing reference levels of 0.75V, Vref = 0.75V, RQ = 250, VDDQ = 1.5V, input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of Figure 6. Document Number: 001-53197 Rev. *C Page 23 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Switching Characteristics Over the Operating Range [23, 24] Cypress Consortium Parameter Parameter tPOWER tCYC tKH tKL tKHKH tKHKH tKHKL tKLKH tKHKH Setup Times tSA tAVKH tSC tIVKH tSCDDR tIVKH tSD tDVKH Hold Times tKHAX tHA tKHIX tHC tHCDDR tKHIX tHD tKHDX Output Times tCHQV tCO tCHQX tDOH tCCQO tCQOH tCQD tCQDOH tCQH tCQHCQH tCHCQV tCHCQX tCQHQV tCQHQX tCQHCQL tCQHCQH tCHZ tCHQZ tCLZ tCHQX1 tQVLD tCQHQVLD PLL Timing tKC Var tKC Var tKC lock tKC lock tKC Reset tKC Reset Description VDD(Typical) to the First Access [25] K Clock Cycle Time 550 MHz 500 MHz 450 MHz 400 MHz Min Max Min Max Min Max Min Max 1 1 1 1 1.81 8.4 2.0 8.4 2.2 8.4 2.5 8.4 Unit ms ns Input Clock (K/K) HIGH Input Clock (K/K) LOW K Clock Rise to K Clock Rise (rising edge to rising edge) 0.4 0.4 0.77 – – – 0.4 0.4 0.85 – – – 0.4 0.4 0.94 – – – 0.4 0.4 1.06 – – – ns ns ns Address Setup to K Clock Rise Control Setup to K Clock Rise (RPS, WPS) Double Data Rate Control Setup to Clock (K/K) Rise (BWS0, BWS1, BWS2, BWS3) 0.23 0.23 – – 0.25 0.25 – – 0.275 0.275 – – 0.4 0.4 – – ns ns 0.18 – 0.20 – 0.22 – 0.28 – ns D[X:0] Setup to Clock (K/K) Rise 0.18 – 0.20 – 0.22 – 0.28 – ns 0.23 Address Hold after K Clock Rise Control Hold after K Clock Rise (RPS, WPS) 0.23 Double Data Rate Control Hold after Clock (K/K) 0.18 Rise (BWS0, BWS1, BWS2, BWS3) – – 0.25 0.25 – – 0.275 0.275 – – 0.4 0.4 – – ns ns – 0.20 – 0.22 – 0.28 – ns D[X:0] Hold after Clock (K/K) Rise 0.18 – 0.20 – 0.22 – 0.28 – ns K/K Clock Rise to Data Valid Data Output Hold after Output K/K Clock Rise (Active to Active) K/K Clock Rise to Echo Clock Valid Echo Clock Hold after K/K Clock Rise Echo Clock High to Data Valid Echo Clock High to Data Invalid Output Clock (CQ/CQ) HIGH [26] CQ Clock Rise to CQ Clock Rise (rising edge to rising edge) [26] – 0.45 – 0.45 – 0.45 – 0.45 –0.45 – –0.45 – –0.45 – –0.45 – ns ns – 0.45 – 0.45 – 0.45 – 0.45 –0.45 – –0.45 – –0.45 – –0.45 – ns ns 0.15 0.15 0.15 0.20 – –0.15 – –0.15 – –0.20 – – 0.75 – 0.85 – 1.0 – – 0.75 – 0.85 – 1.0 – ns ns ns ns 0.45 0.45 ns –0.45 – –0.45 – –0.45 – –0.45 – –0.15 0.15 –0.15 0.15 –0.15 0.15 –0.20 0.20 ns ns Clock (K/K) Rise to High Z (Active to High Z) [27, 28] Clock (K/K) Rise to Low Z [27, 28] Echo Clock High to QVLD Valid [29] Clock Phase Jitter PLL Lock Time (K) K Static to PLL Reset [30] –0.15 0.655 0.655 – – 20 30 0.15 – – – 20 30 0.45 0.15 – – – 20 30 0.45 0.15 – – – 20 30 0.20 – ns s ns Notes 24. When a part with a maximum frequency above 400 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being operated and outputs data with the output timings of that frequency range. 25. This part has a voltage regulator internally; tPOWER is the time that the power must be supplied above VDD minimum initially before a read or write operation can be initiated. 26. These parameters are extrapolated from the input timing parameters (tCYC/2 - 250 ps, where 250 ps is the internal jitter). These parameters are only guaranteed by design and are not tested in production. 27. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of Figure 6 on page 23. Transition is measured ± 100 mV from steady-state voltage. 28. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO. 29. tQVLD spec is applicable for both rising and falling edges of QVLD signal. 30. Hold to >VIH or <VIL. Document Number: 001-53197 Rev. *C Page 24 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Switching Waveforms Read/Write/Deselect Sequence [31, 32, 33] Figure 7. Waveform for 2.5 Cycle Read Latency NOP 1 WRITE 3 READ 2 READ 4 NOP 6 WRITE 5 7 8 K t KH t KL t CYC t KHKH K RPS t SC tHC t SC t HC WPS A A0 t SA A1 A3 A2 t HD t HA t SD D t HD t SD D11 D10 D12 D30 D13 D31 D32 tQVLD t QVLD QVLD D33 t tDOH t CLZ CO Q Q00 tCQDOH tCQD Q01 (Read Latency = 2.5 Cycles) Q02 Q03 Q20 Q21 tCHZ Q22 Q23 tCCQO tCQOH CQ t CQH t CQHCQH tCQOH t CCQO CQ DON’T CARE UNDEFINED Notes 31. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, that is, A0+1. 32. Outputs are disabled (High Z) one clock cycle after a NOP. 33. In this example, if address A2 = A1, then data Q20 = D10, Q21 = D11, Q22 = D12, and Q23 = D13. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document Number: 001-53197 Rev. *C Page 25 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Ordering Information The following table contains only the parts that are currently available. If you do not see what you are looking for, contact your local sales representative. For more information, visit the Cypress website at www.cypress.com and refer to the product summary page at http://www.cypress.com/products Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives and distributors. To find the office closest to you, visit us at http://www.cypress.com/go/datasheet/offices. Table 11. Ordering Information Speed (MHz) 400 Package Diagram Ordering Code CY7C11651KV18-400BZXC Package Type Operating Range 51-85180 165-ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-free Commercial Ordering Code Definitions CY 7C 11651 K V18 - 400 BZX C Temperature Range: C = Commercial Package Type: BZX = 165-ball FPBGA (Pb-free) Frequency Range: 400 MHz V18 = 1.8 V Die Revision Part Identifier Marketing Code: 7C = SRAM Company ID: CY = Cypress Document Number: 001-53197 Rev. *C Page 26 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Package Diagram Figure 8. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180 TOP VIEW BOTTOM VIEW PIN 1 CORNER PIN 1 CORNER 1 2 3 4 5 6 7 8 9 10 11 Ø0.08 M C Ø0.25 M C A B A Ø0.50 B 11 10 9 8 7 6 5 4 -0.06 +0.14 3 (165X) 2 1 C A D B E C 1.00 F D 15.00±0.10 G E H F K L G 14.00 15.00±0.10 J H J M K N L 7.00 P M R N P A R A 1.00 5.00 B 13.00±0.10 1.40 MAX. SEATING PLANE C 0.15 C 0.53±0.05 0.36 0.25 C 10.00 B 13.00±0.10 0.15(4X) NOTES : SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD) PACKAGE WEIGHT : 0.475g JEDEC REFERENCE : MO-216 / ISSUE E PACKAGE CODE : BB0AC 51-85180 *C Document Number: 001-53197 Rev. *C Page 27 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Document History Page Document Title: CY7C11611KV18/CY7C11761KV18/CY7C11631KV18/CY7C11651KV18, 18-Mbit QDR® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) Document Number: 001-53197 Rev. ECN No. Orig of Change Submission Description of Change Date ** 2702744 VKN/PYRS 05/06/09 New datasheet *A 2888780 VKN/NJY 03/08/10 Post to external web Converted from preliminary to final Added Contents Included Soft Error Immunity Data Changed Input Capacitance (CIN) from 2 pF to 4 pF Changed Output Capacitance (CO) from 3 pF to 4 pF Corrected the typo in the hold timing parameters tHCDDR and tHD at 450MHz from 0.28ns to 0.22ns For 550 MHz, 500 MHz and 450 MHz, Changed Output timing parameters tCO, tCCQO, tCHZ specs to 450 ps and tDOH, tCQOH, tCLZ to -450 ps Modified Ordering Information table by including parts that are available and modified the disclaimer for the Ordering information Updated 165-ball package outline diagram Updated links in Sales, Solutions, and Legal Information *B 2931775 VKN 05/13/10 Included “CY7C11651KV18-400BZXC” in the Ordering information table *C 3158084 NJY 01/31/2011 Document Number: 001-53197 Rev. *C Updated Ordering Information and added Ordering Code Definitions. Page 28 of 29 [+] Feedback CY7C11611KV18, CY7C11761KV18 CY7C11631KV18, CY7C11651KV18 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at Cypress Locations. Products Automotive Clocks & Buffers Interface Lighting & Power Control PSoC Solutions cypress.com/go/automotive cypress.com/go/clocks psoc.cypress.com/solutions cypress.com/go/interface PSoC 1 | PSoC 3 | PSoC 5 cypress.com/go/powerpsoc cypress.com/go/plc Memory Optical & Image Sensing PSoC Touch Sensing USB Controllers Wireless/RF cypress.com/go/memory cypress.com/go/image cypress.com/go/psoc cypress.com/go/touch cypress.com/go/USB cypress.com/go/wireless © Cypress Semiconductor Corporation, 2009-2011. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 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Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Use may be limited by and subject to the applicable Cypress software license agreement. Document Number: 001-53197 Rev. *C Revised January 31, 2011 Page 29 of 29 All products and company names mentioned in this document may be the trademarks of their respective holders. [+] Feedback