ZOWIE High Efficient Rectifier (200V~1000V / 1.0A) EGC10DH THRU EGC10MH FEATURES OUTLINE DIMENSIONS Halogen-free type Compliance to RoHS product GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage Low power loss, High efficiency High current capability Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Case : 2010 Unit : mm 0.05 4.5 ± 0.1 2.20 ± 0.1 * * * * * * * * 0 0.5 0.95 ± 0.2 0.95 ± 0.2 + 0.2 0.96 - 0.1 APPLICATION * General purpose rectification * Surge absorption JEDEC : SMA DO-214AC MECHANICAL DATA Case : Packed with FRP substrate and epoxy underfilled Terminals : Pure Tin plated (Lead-Free), solderable per MIL-STD-750, Method 2026. Polarity : Cathode Band, Laser marking Weight : 0.02 gram MARKING Series code Cathode mark EGC 10D . Halogen-free type Amps class Voltage class PACKING * 3,000 pieces per 7" (178mm ± 2mm) reel * 4 reels per box * 6 boxes per carton Voltage class: D = 200V, G = 400V J = 600V, K = 800V, M = 1000V o Absolute Maximum Ratings (Ta = 25 C) EGC10 ITEM Symbol Conditions DH GH JH KH MH 200 400 600 800 1000 Unit Repetitive peak reverse voltage VRRM Average forward current IF(AV) Peak forward surge current IFSM 8.3ms single half sine-wave 30 25 A Trr IF = 0.5A, IR = 1.0A, Irr = 0.25A 50 75 nS Reverse recovery time Operating junction and storage temperature Range ITEM Forward voltage Repetitive peak reverse current Junction capacitance Thermal resistance 1.0 Tj,TSTG Symbol V A o -65 to +175 Type Min. Typ. Max. EGC10DH EGC10GH EGC10JH EGC10KH EGC10MH - 0.95 1.00 - 1.05 1.25 - 1.45 1.70 - 1.45 1.70 - 1.45 1.70 VR = Max. VRRM , Ta = 25 C - 0.10 5 uA VR = 4V, f = 1.0 MHz - 9 - pF Rth(JA) Junction to ambient (NOTE) - 65 - Rth(JL) Junction to lead (NOTE) - 14 - VF IRRM Cj Conditions C IF = 1.0A o Unit V o C/W NOTES : Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas. REV. 0 2009/10 ZOWIE EGC10DH THUR EGC10MH FIG.1 - TYPICAL FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 30 RESISTIVE OR INDUCTIVE LOAD PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 1.0 0.5 8.3ms SINGLE HALF SINE-WAVE 25 20 15 EGC10DH & EGC10GH EGC10JH ~ EGC10MH 10 5 0 0 0 25 50 75 100 125 150 1 175 10 100 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER BRIDGE ELEMENT o 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 10.00 IINSTANTANEOUS FORWARD CURRENT, AMPERES (200V~1000V / 1.0 A) 1.00 0.10 o TJ=25 C o TJ=150 C 10.0 o TJ=125 C 1.0 o TJ=25 C 0.10 EGC10DH EGC10GH EGC10JH~EGC10MH 0.01 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 200 o JUNCTION CAPACITANCE, pF TJ = 25 C 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, VOLTS REV. 0 2009/10