1N957B 1N992B.aspx?ext=

1N957B-1N992B
500 mW SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
FEATURES


Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Value
Operating temperature
-65°C to +175°C
Storage temperature
-65°C to +175°C
Thermal resistance
250°C/W junction to lead at 3/8” lead length from body, or 310°C/W junction to ambient when mounted on
FR4 PC board(1)
Steady-state power
0.5W at TL ≤ 50°C 3/8” from body or 0.48W at TA ≤ 25°C when mounted on FR4 PC board (1)
@ 200 mA: 1.1 volts maximum (1N957B-1N985B)
Forward voltage
@ 200mA: 1.3 volts maximum (1N985-1N992B)
Solder temperature
260°C for 10 s maximum
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
(1)
Nominal
zener
voltage
(2)
Zener
test
current
Maximum zener impedance
(3)
Maximum
DC zener
current
Maximum
surge
current
(4)
(5)
Maximum reverse
leakage current
Maximum
temperature
coefficient
VZ
IZT
ZZT @ IZT
ZZK
@IZK
IZM
IZSM
IR
@VR
αvz
Volts
mA
Ohms
Ohms
mA
mA
mA
µA
Volts
%/°C
1N957B
6.8
18.5
4.5
700
1.0
55
300
150
5.2
0.05
1N958B
7.5
16.5
5.5
700
0.5
50
275
75
5.7
0.058
1N959B
8.2
15.0
6.5
700
0.5
45
250
50
6.2
0.065
1N960B
9.1
14.0
7.5
700
0.5
41
225
25
6.9
0.068
1N961B
10
12.5
8.5
700
0.25
38
200
10
7.6
0.075
1N962B
11
11.5
9.5
700
0.25
32
175
5
8.4
0.076
1N963B
12
10.5
11.5
700
0.25
31
160
5
9.1
0.077
1N964B
13
9.5
13
700
0.25
28
150
5
9.9
0.079
1N965B
15
8.5
16
700
0.25
25
130
5
11.4
0.082
1N966B
16
7.8
17
700
0.25
24
120
5
12.2
0.083
1N967B
18
7.0
21
750
0.25
20
110
5
13.7
0.085
1N968B
20
6.2
25
750
0.25
18
100
5
15.2
0.086
1N969B
22
5.6
29
750
0.25
16
90
5
16.7
0.087
1N970B
24
5.2
33
750
0.25
15
80
5
18.2
0.088
1N971B
27
4.6
41
750
0.25
13
70
5
20.6
0.090
1N972B
30
4.2
49
1000
0.25
12
65
5
22.8
0.091
1N973B
33
3.8
58
1000
0.25
11
60
5
25.1
0.092
1N974B
36
3.4
70
1000
0.25
10
55
5
27.4
0.093
1N975B
39
3.2
80
1000
0.25
9.5
46
5
29.7
0.094
8.8
44
5
32.7
0.095
1N976B
43
3.0
93
1500
0.25
Rev. 20150825
1N957B-1N992B
500 mW SILICON ZENER DIODES
High-reliability discrete products
and engineering services since 1977
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Part
number
(1)
Nominal
zener
voltage
(2)
Zener
test
current
Maximum zener impedance
(3)
Maximum
DC zener
current
Maximum
surge
current
(4)
(5)
Maximum reverse
leakage current
Maximum
temperature
coefficient
VZ
IZT
ZZT @ IZT
ZZK
@IZK
IZM
IZSM
IR
@VR
αvz
Volts
mA
Ohms
Ohms
mA
mA
mA
µA
Volts
%/°C
1N977B
47
2.7
105
1500
0.25
7.9
40
5
35.8
0.095
1N978B
51
2.5
125
1500
0.25
7.4
37
5
38.8
0.096
1N979B
56
2.2
150
2000
0.25
6.8
35
5
42.6
0.096
1N980B
62
2.0
185
2000
0.25
6.0
30
5
47.1
0.097
1N981B
68
1.8
230
2000
0.25
5.5
28
5
51.7
0.097
1N982B
75
1.7
270
2000
0.25
5.0
26
5
56.0
0.098
1N983B
82
1.5
330
3000
0.25
4.6
23
5
62.2
0.098
1N984B
91
1.4
400
3000
0.25
4.1
21
5
69.2
0.099
1N985B
100
1.3
500
3000
0.25
3.7
18
5
76.0
0.110
1N986B
110
1.1
750
4000
0.25
3.3
16
5
83.6
0.110
1N987B
120
1.0
900
4500
0.25
3.1
15
5
91.2
0.110
1N988B
130
0.95
1100
5000
0.25
2.7
13
5
98.8
0.110
1N989B
150
0.85
1500
6000
0.25
2.4
12
5
114.0
0.110
1N990B
160
0.80
1700
6500
0.25
2.2
11
5
121.6
0.110
1N991B
180
0.68
2200
7100
0.25
2.0
10
5
136.8
0.110
1N992B
200
0.65
2500
8000
0.25
1.8
9
5
152.0
0.110
NOTE 1. Zener voltage tolerance on ‘’B’’ suffix is + 5%. Suffix letter A denotes +10%. No suffix denotes +20% tolerance. ‘’C’’ suffix denotes + 2% and ‘’D’’ suffix denotes + 1%.
NOTE 2. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C.
NOTE 3. Zener impedance is derived by superimposing on I ZTA 60HZ rms a.c. current equal to 10% of IZT.
NOTE 4: The values of IZM are calculated for a ±5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above V ZT which results from zener impedance
and the increase in junction temperature as power dissipation approaches 400mW. In the case of individual diodes I ZM is that value of current which results in a dissipation of 400mW at 75°C
lead temperature at 3/8” from body.
NOTE 5: The surge for IZM is a square wave or equivalent half-sine wave pulse of 1/120 second duration.
Rev. 20150825
High-reliability discrete products
and engineering services since 1977
1N957B-1N992B
500 mW SILICON ZENER DIODES
MECHANICAL CHARACTERISTICS
Case
DO-35
Marking
Body painted, alph-numeric
Polarity
Cathode band
Rev. 20150825
High-reliability discrete products
and engineering services since 1977
1N957B-1N992B
500 mW SILICON ZENER DIODES
Rev. 20150825