1N957B-1N992B 500 mW SILICON ZENER DIODES High-reliability discrete products and engineering services since 1977 FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Value Operating temperature -65°C to +175°C Storage temperature -65°C to +175°C Thermal resistance 250°C/W junction to lead at 3/8” lead length from body, or 310°C/W junction to ambient when mounted on FR4 PC board(1) Steady-state power 0.5W at TL ≤ 50°C 3/8” from body or 0.48W at TA ≤ 25°C when mounted on FR4 PC board (1) @ 200 mA: 1.1 volts maximum (1N957B-1N985B) Forward voltage @ 200mA: 1.3 volts maximum (1N985-1N992B) Solder temperature 260°C for 10 s maximum ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part number (1) Nominal zener voltage (2) Zener test current Maximum zener impedance (3) Maximum DC zener current Maximum surge current (4) (5) Maximum reverse leakage current Maximum temperature coefficient VZ IZT ZZT @ IZT ZZK @IZK IZM IZSM IR @VR αvz Volts mA Ohms Ohms mA mA mA µA Volts %/°C 1N957B 6.8 18.5 4.5 700 1.0 55 300 150 5.2 0.05 1N958B 7.5 16.5 5.5 700 0.5 50 275 75 5.7 0.058 1N959B 8.2 15.0 6.5 700 0.5 45 250 50 6.2 0.065 1N960B 9.1 14.0 7.5 700 0.5 41 225 25 6.9 0.068 1N961B 10 12.5 8.5 700 0.25 38 200 10 7.6 0.075 1N962B 11 11.5 9.5 700 0.25 32 175 5 8.4 0.076 1N963B 12 10.5 11.5 700 0.25 31 160 5 9.1 0.077 1N964B 13 9.5 13 700 0.25 28 150 5 9.9 0.079 1N965B 15 8.5 16 700 0.25 25 130 5 11.4 0.082 1N966B 16 7.8 17 700 0.25 24 120 5 12.2 0.083 1N967B 18 7.0 21 750 0.25 20 110 5 13.7 0.085 1N968B 20 6.2 25 750 0.25 18 100 5 15.2 0.086 1N969B 22 5.6 29 750 0.25 16 90 5 16.7 0.087 1N970B 24 5.2 33 750 0.25 15 80 5 18.2 0.088 1N971B 27 4.6 41 750 0.25 13 70 5 20.6 0.090 1N972B 30 4.2 49 1000 0.25 12 65 5 22.8 0.091 1N973B 33 3.8 58 1000 0.25 11 60 5 25.1 0.092 1N974B 36 3.4 70 1000 0.25 10 55 5 27.4 0.093 1N975B 39 3.2 80 1000 0.25 9.5 46 5 29.7 0.094 8.8 44 5 32.7 0.095 1N976B 43 3.0 93 1500 0.25 Rev. 20150825 1N957B-1N992B 500 mW SILICON ZENER DIODES High-reliability discrete products and engineering services since 1977 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Part number (1) Nominal zener voltage (2) Zener test current Maximum zener impedance (3) Maximum DC zener current Maximum surge current (4) (5) Maximum reverse leakage current Maximum temperature coefficient VZ IZT ZZT @ IZT ZZK @IZK IZM IZSM IR @VR αvz Volts mA Ohms Ohms mA mA mA µA Volts %/°C 1N977B 47 2.7 105 1500 0.25 7.9 40 5 35.8 0.095 1N978B 51 2.5 125 1500 0.25 7.4 37 5 38.8 0.096 1N979B 56 2.2 150 2000 0.25 6.8 35 5 42.6 0.096 1N980B 62 2.0 185 2000 0.25 6.0 30 5 47.1 0.097 1N981B 68 1.8 230 2000 0.25 5.5 28 5 51.7 0.097 1N982B 75 1.7 270 2000 0.25 5.0 26 5 56.0 0.098 1N983B 82 1.5 330 3000 0.25 4.6 23 5 62.2 0.098 1N984B 91 1.4 400 3000 0.25 4.1 21 5 69.2 0.099 1N985B 100 1.3 500 3000 0.25 3.7 18 5 76.0 0.110 1N986B 110 1.1 750 4000 0.25 3.3 16 5 83.6 0.110 1N987B 120 1.0 900 4500 0.25 3.1 15 5 91.2 0.110 1N988B 130 0.95 1100 5000 0.25 2.7 13 5 98.8 0.110 1N989B 150 0.85 1500 6000 0.25 2.4 12 5 114.0 0.110 1N990B 160 0.80 1700 6500 0.25 2.2 11 5 121.6 0.110 1N991B 180 0.68 2200 7100 0.25 2.0 10 5 136.8 0.110 1N992B 200 0.65 2500 8000 0.25 1.8 9 5 152.0 0.110 NOTE 1. Zener voltage tolerance on ‘’B’’ suffix is + 5%. Suffix letter A denotes +10%. No suffix denotes +20% tolerance. ‘’C’’ suffix denotes + 2% and ‘’D’’ suffix denotes + 1%. NOTE 2. Zener voltage is measured with the device junction in thermal equilibrium at an ambient temperature of 25°C + 3°C. NOTE 3. Zener impedance is derived by superimposing on I ZTA 60HZ rms a.c. current equal to 10% of IZT. NOTE 4: The values of IZM are calculated for a ±5% tolerance on nominal zener voltage. Allowance has been made for the rise in zener voltage above V ZT which results from zener impedance and the increase in junction temperature as power dissipation approaches 400mW. In the case of individual diodes I ZM is that value of current which results in a dissipation of 400mW at 75°C lead temperature at 3/8” from body. NOTE 5: The surge for IZM is a square wave or equivalent half-sine wave pulse of 1/120 second duration. Rev. 20150825 High-reliability discrete products and engineering services since 1977 1N957B-1N992B 500 mW SILICON ZENER DIODES MECHANICAL CHARACTERISTICS Case DO-35 Marking Body painted, alph-numeric Polarity Cathode band Rev. 20150825 High-reliability discrete products and engineering services since 1977 1N957B-1N992B 500 mW SILICON ZENER DIODES Rev. 20150825