TSM19N20 A12

TSM19N20
200V N-Channel Power MOSFET
TO-252
(DPAK)
PRODUCT SUMMARY
Pin Definition:
1. Gate
2. Drain
3. Source
Features
VDS (V)
RDS(on)(mΩ)
ID (A)
200
92 @ VGS =10V
18
Block Diagram
●
Advanced Trench Technology
●
Low RDS(ON) 92mΩ (Max.)
●
Low gate charge typical @ 55nC (Typ.)
●
Low Crss typical @ 73pF (Typ.)
Part No.
Package
Packing
TSM19N20CP ROG
TO-252
2.5Kpcs / 13” Reel
en
Note: “G” denote for Halogen Free Product
de
d
Ordering Information
mm
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Symbol
Limit
Unit
VDS
200
V
VGS
±20
V
Continuous Drain Current @ TC=25°C
ID
18
A
Drain Current Pulsed (Note 1)
IDM
72
A
Avalanche Current
IAS
8
A
Avalanche Energy, L=10mH
EAS
320
mJ
Maximum Power Dissipation @ TC=25°C
PD
48
W
Storage Temperature Range
TSTG
-55 to +150
°C
TJ
-55 to +150
°C
Symbol
Limit
Unit
RӨJC
2.6
o
50
o
eco
Parameter
Drain-Source Voltage
No
tR
Gate-Source Voltage
Operating Junction Temperature Range
* Limited by maximum junction temperature
Thermal Performance
Parameter
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨJA
C/W
C/W
Notes: Surface mounted on FR4 board t ≤ 10sec
1/4
Version: A12
TSM19N20
200V N-Channel Power MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
200
--
--
V
Drain-Source On-State Resistance
VGS = 10V, ID = 10A
RDS(ON)
--
80
92
mΩ
Gate Threshold Voltage
VDS = VGS, ID = 250uA
VGS(TH)
2
--
4
V
Zero Gate Voltage Drain Current
VDS = 160V, VGS = 0V
IDSS
--
--
1
uA
Gate Body Leakage
VGS = ±30V, VDS = 0V
IGSS
--
--
±100
nA
Qg
--
55
--
Qgs
--
18
--
Qgd
--
17
--
VDS = 100V, ID = 10A,
Gate-Source Charge
VGS = 10V
Gate-Drain Charge
Input Capacitance
VDS = 30V, VGS = 0V,
Output Capacitance
--
145
--
Crss
--
73
--
--
17
--
tr
--
12
--
td(off)
--
28
--
tf
--
10
--
VSD
--
--
1.3
V
tfr
--
82
--
nS
en
Reverse Transfer Capacitance
f = 1.0MHz
2300
--
Ciss
Switching
td(on)
mm
Turn-On Delay Time
Turn-On Rise Time
VGS = 10V, VDS = 100V,
Turn-Off Delay Time
RG = 3Ω
Turn-Off Fall Time
--
nC
Coss
de
Total Gate Charge
d
Dynamic
pF
nS
Reverse Recovery Time
VGS=0V, IS=10A
tR
Drain-Source Diode Forward
Voltage
eco
Drain-Source Diode Characteristics and Maximum Rating
o
IS = 10A, TJ=25 C
No
dI/dt = 100A/us
Reverse Recovery Charge
Qfr
-276
-nC
Notes:
1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air
2/4
Version: A12
TSM19N20
200V N-Channel Power MOSFET
Unit: Millimeters
No
tR
eco
mm
en
de
d
TO-252 Mechanical Drawing
3/4
Version: A12
TSM19N20
No
tR
eco
mm
en
de
d
200V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
4/4
Version: A12