INTERSIL ISL54503IRUZ-T

ISL54503
Features
The Intersil ISL54503 device is a low ON-resistance, low
voltage, bidirectional, single pole/double throw (SPDT)
analog switch designed to operate from a single +1.8V
to +5.5V supply. Targeted applications include battery
powered equipment that benefit from low ON-resistance
(2.5Ω) and fast switching speeds (tON = 25ns,
tOFF = 15ns). The digital logic input is 1.8V CMOS
compatible when using a single +3V supply.
• ON-resistance (rON)
- VCC = +5.0V. . . . . . . . . . . . . . . . . . . . . 2.5Ω
- VCC = +3.0V. . . . . . . . . . . . . . . . . . . . . 4.0Ω
- VCC = +1.8V. . . . . . . . . . . . . . . . . . . . . 7.0Ω
• rON matching between channels . . . . . . . . . . . 3mΩ
• rON flatness (+4.5V Supply) . . . . . . . . . . . . . 0.6Ω
• Single supply operation . . . . . . . . +1.8V to +5.5V
Cell phones, for example, often face ASIC functionality
limitations. The number of analog input or GPIO pins
may be limited and digital geometries are not well
suited to analog switch performance. This part may be
used to “mux-in” additional functionality while reducing
ASIC design risk. The ISL54503 is offered in a 6 Ld
1.2mmx1.0mmx0.4mm pitch µTDFN package and a
6 Ld SOT-23 package, alleviating board space
limitations.
• Fast switching action (+4.5V Supply)
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . 25ns
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . 15ns
The ISL54503 is a committed SPDT that consist of one
normally open (NO) and one normally closed (NC)
switch. This configuration can also be used as a 2-to-1
multiplexer.
• Pb-free available (RoHS compliant)
TABLE 1. FEATURES AT A GLANCE
ISL54503
Number of Switches
1
SW
SPDT or 2-1 MUX
1.8V rON
6Ω
1.8V tON/tOFF
65ns/40ns
3V rON
3Ω
3V tON/tOFF
30ns/20ns
5V rON
2.5Ω
5V tON/tOFF
25ns/15ns
Package
6 Ld µTDFN, 6 Ld SOT-23
October 26, 2009
FN6551.2
1
• Guaranteed break-before-make
• ESD HBM rating . . . . . . . . . . . . . . . . . . . . . . . 6kV
• 1.8V CMOS logic compatible (+3V supply)
• Available in 6 Ld µTDFN and 6 Ld SOT-23 packages
Applications
• Battery powered, handheld, and portable equipment
- Cellular/mobile phones
- Pagers
- Laptops, notebooks, palmtops
• Portable test and measurement
• Medical equipment
• Audio and video switching
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2007, 2009. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL54503
+1.8V to +5.5V, 2.5Ω, Single SPDT Analog Switch
ISL54503
Ordering Information
PART NUMBER
(Notes 1, 4)
PART
MARKING
PACKAGE
Tape & Reel
(Pb-Free)
TEMP. RANGE
(°C)
PKG.
DWG. #
ISL54503IRUZ-T (Note 2) 3
-40 to +85
6 Ld µTDFN
L6.1.2x1.0A
ISL54503IHZ-T (Note 3)
-40 to +85
6 Ld SOT-23
MDP0038
4503
1. Please refer to TB347 for details on reel specifications.
2. These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach
materials and NiPdAu plate - e4 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free
soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed
the Pb-free requirements of IPC/JEDEC J STD-020.
3. These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach
materials, and 100% matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both
SnPb and Pb-free soldering operations). Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures
that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
4. For Moisture Sensitivity Level (MSL), please see device information page for ISL54503. For more information on MSL please
see techbrief TB363.
Pin Configuration
Pin Descriptions
(Note 5)
ISL54503
(6 LD µTDFN)
TOP VIEW
NAME
NO
1
6
IN
GND
2
5
V+
NC
3
4
COM
ISL54503
(6 LD SOT-23)
TOP VIEW
NC
1
6 GND
IN
2
5 COM
NO
3
4 V+
PIN
PIN
µTDFN SOT-23
FUNCTION
V+
5
4
System Power Supply Input
(+1.8V to +5.5V)
GND
2
6
Ground Connection
IN
6
2
Digital Control Input
COM
4
5
Analog Switch Common Pin
NO
1
3
Analog Switch Normally Open Pin
NC
3
1
Analog Switch Normally Closed
Pin
NOTE:
5. Switches Shown for Logic “0” Input.
Truth Table
NOTE:
LOGIC
PIN NC
PIN NO
0
ON
OFF
1
OFF
ON
Logic “0” ≤0.5V. Logic “1” ≥1.4V with a 3V supply.
2
FN6551.2
October 26, 2009
ISL54503
Absolute Maximum Ratings
Thermal Information
V+ to GND . . . . . . . . . . . . . . . . . . . . . . .
Input Voltages
NO, NC, IN (Note 6) . . . . . . . . . . . -0.5V
Output Voltages
COM (Note 6) . . . . . . . . . . . . . . . -0.5V
Continuous Current NO, NC, or COM. . . . . .
Peak Current NO, NC, or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . .
ESD Rating
Human Body Model . . . . . . . . . . . . . . . .
Machine Model . . . . . . . . . . . . . . . . . . .
Charged Device Model . . . . . . . . . . . . . . .
. . . -0.5 to 6.5V
to ((V+) + 0.5V)
to ((V+) + 0.5V)
. . . . . . ±300mA
. . . . . . ±500mA
. . . . . . . . >6kV
. . . . . . . >300V
. . . . . . . >2.2kV
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
6 Ld µTDFN Package (Notes 7, 9). .
239.2
111.6
6 Ld SOT-23 Package (Note 8, 9) . .
260
120
Maximum Junction Temperature (Plastic Package). . +150°C
Maximum Storage Temperature Range. . . . . -65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
V+ (Positive DC Supply Voltage) . . .
Analog Signal Range . . . . . . . . . . .
VIN (Digital Logic Input Voltage (IN)
Temperature Range . . . . . . . . . . . .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
. . 1.8V to 5.5V
. . . . . 0V to V+
. . . . . 0V to V+
-40°C to +85°C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact
product reliability and result in failures not covered by warranty.
NOTES:
6. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum
current ratings.
7. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach”
features. See Tech Brief TB379.
8. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief
TB379 for details.
9. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications - 5V Supply Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, VINH = 2.0V, VINL = 0.8V
(Note 10), Unless Otherwise Specified. Boldface limits apply over the operating
temperature range, -40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Notes 11, 12)
TYP
MAX
(Notes 11, 12) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range,
VANALOG
ON-Resistance, rON
Full
V+ = 4.5V, ICOM = 100mA, VNO or VNC = 0V
to V+, (Note 14, See Figure 5)
rON Matching Between
Channels, ΔrON
V+ = 4.5V, ICOM = 100mA, VNO or
VNC = 2.5V (Note 14)
rON Flatness, rFLAT(ON)
V+ = 4.5V, ICOM = 100mA, VNO or VNC = 0V
to V+, (Notes 13, 14)
NO or NC OFF Leakage
Current, INO(OFF) or
INC(OFF)
V+ = 5.5V, VCOM = 0.3V, 5V, VNO or
VNC = 5V, 0.3V
COM ON Leakage Current,
ICOM(ON)
V+ = 5.5V, VCOM = 0.3V, 5V, or VNO or
VNC = 0.3V, 5V, or Floating
0
-
V+
V
25
-
2.2
2.5
Ω
Full
-
-
3
Ω
25
-
0.003
0.1
Ω
Full
-
-
0.15
Ω
25
-
0.6
0.65
Ω
Full
-
-
0.7
Ω
25
-25
1.5
25
nA
Full
-150
-
150
nA
25
-30
2.8
30
nA
Full
-300
-
300
nA
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
Turn-OFF Time, tOFF
Break-Before-Make Time
Delay, tD
V+ = 4.5V, VNO or VNC = 3.0V, RL = 50Ω,
CL = 35pF (see Figure 1, Note 14)
25
-
25
-
ns
Full
-
25
-
ns
V+ = 4.5V, VNO or VNC = 3.0V, RL = 50Ω,
CL = 35pF (see Figure 1, Note 14)
25
-
15
-
ns
Full
-
16
-
ns
Full
-
15
-
ns
V+ = 5.5V, VNO or VNC = 3.0V, RL = 50Ω,
CL = 35pF (see Figure 3, Note 14)
Charge Injection, Q
VG = 0V, RG = 0Ω, CL = 1.0nF (see Figure 2)
25
-
24
-
pC
OFF-Isolation
RL = 50Ω, CL = 5pF, f = 1MHz,
VCOM = 1VP-P (see Figure 4)
25
-
70
-
dB
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FN6551.2
October 26, 2009
ISL54503
Electrical Specifications - 5V Supply Test Conditions: V+ = +4.5V to +5.5V, GND = 0V, VINH = 2.0V, VINL = 0.8V
(Note 10), Unless Otherwise Specified. Boldface limits apply over the operating
temperature range, -40°C to +85°C. (Continued)
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Notes 11, 12)
TYP
MAX
(Notes 11, 12) UNITS
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 32Ω
25
-
0.15
-
%
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P,
RL = 600Ω
25
-
0.014
-
%
-3dB Bandwidth
RL = 50Ω
25
-
250
-
MHz
NO or NC OFF Capacitance,
COFF
V+ = 4.5V, f = 1MHz, VNO or VNC = VCOM =
0V (see Figure 7)
25
-
7
-
pF
COM ON Capacitance,
CCOM(ON)
V+ = 4.5V, f = 1MHz, VNO or VNC = VCOM =
0V (see Figure 7)
25
-
18
-
pF
Full
1.65
-
5.5
V
25
-
0.028
0.1
µA
Full
-
1.1
2.5
µA
POWER SUPPLY CHARACTERISTICS
Power Supply Range
Positive Supply Current, I+ V+ = 5.5V, VIN = 0V or V+
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, VINL
Full
-
-
0.8
V
Input Voltage High, VINH
Full
2.4
-
-
V
Full
-0.1
0.053
0.1
µA
Input Current, IINH, IINL
V+ = 5.5V, VIN = 0V or V+
Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.6V, GND = 0V, VINH = 1.4V, VINL = 0.5V
(Note 10), Unless Otherwise Specified. Boldface limits apply over the operating
temperature range, -40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Notes 11, 12)
TYP
MAX
(Notes 11, 12) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range,
VANALOG
Full
0
-
V+
V
ON-Resistance, rON
µTDFN
V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V
to V+, (Note 14, See Figure 5)
25
-
3.3
3.5
Ω
Full
-
-
4.5
Ω
ON-Resistance, rON
SOT-23
V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V
to V+, (Note 14, See Figure 5)
25
-
3.3
3.6
Ω
Full
-
-
4.5
Ω
rON Matching Between
Channels,
ΔrON
V+ = 2.7V, ICOM = 100mA, VNO or
VNC = 1.5V (Note 14)
25
-
0.006
0.15
Ω
Full
-
-
0.2
Ω
rON Flatness, rFLAT(ON)
µTDFN
V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V
to V+, (Notes 13, 14)
25
-
1
1.1
Ω
Full
-
-
1.2
Ω
rON Flatness, rFLAT(ON)
SOT-23
V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V
to V+, (Notes 13, 14)
25
-
1
1.2
Ω
Full
-
-
1.3
Ω
25
-
30
-
ns
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF (see Figure 1, Note 14)
Turn-OFF Time, tOFF
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF (see Figure 1, Note 14)
Break-Before-Make Time
Delay, tD
V+ = 3.0V, VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF (see Figure 3, Note 14)
Full
-
30
-
ns
25
-
20
-
ns
Full
-
20
-
ns
Full
-
18
-
ns
Charge Injection, Q
VG = 0V, RG = 0Ω, CL = 1.0nF (see Figure 2)
25
-
16
-
pC
OFF-Isolation
RL = 50Ω, CL = 5pF, f = 1MHz, VCOM =
1VP-P (see Figure 4)
25
-
70
-
dB
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 32Ω
25
-
0.36
-
%
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FN6551.2
October 26, 2009
ISL54503
Electrical Specifications - 3V Supply Test Conditions: V+ = +2.7V to +3.6V, GND = 0V, VINH = 1.4V, VINL = 0.5V
(Note 10), Unless Otherwise Specified. Boldface limits apply over the operating
temperature range, -40°C to +85°C. (Continued)
PARAMETER
TEST CONDITIONS
TEMP
MIN
(°C) (Notes 11, 12)
TYP
MAX
(Notes 11, 12) UNITS
Total Harmonic Distortion
f = 20Hz to 20kHz, VCOM = 2VP-P,
RL = 600Ω
25
-
0.03
-
%
-3dB Bandwidth
Signal = 0dBm, RL = 50Ω
25
-
250
-
MHz
NO or NC OFF Capacitance,
COFF
f = 1MHz, VNO or VNC = VCOM = 0V
(see Figure 7)
25
-
6
-
pF
COM ON Capacitance,
CCOM(ON)
f = 1MHz, VNO or VNC = VCOM = 0V
(see Figure 7)
25
-
18
-
pF
25
-
0.013
-
µA
Full
-
0.7
-
µA
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+ V+ = 3.6V, VIN = 0V or V+
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, VINL
Full
-
-
0.5
V
Input Voltage High, VINH
Full
1.4
-
-
V
Full
-0.1
0.058
0.1
µA
Input Current, IINH, IINL
V+ = 3.6V, VIN = 0V or V+
Electrical Specifications - 1.8V Supply Test Conditions: V+ = +1.8V, GND = 0V, VINH = 1V, VINL = 0.4V (Note 10), Unless
Otherwise Specified. Boldface limits apply over the operating temperature
range, -40°C to +85°C.
PARAMETER
TEST CONDITIONS
TEMP
MIN
MAX
(°C) (Notes 11, 12) TYP (Notes 11, 12) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range,
VANALOG
ON-Resistance, rON
Full
V+ = 1.8V, ICOM = 10mA, VNO or VNC = 0V
to V+, (Note 14, See Figure 5)
0
-
V+
V
25
-
6
6.5
Ω
Full
-
-
7
Ω
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
V+ = 1.8V, VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF (see Figure 1, Note 14)
25
-
65
-
ns
Full
-
95
-
ns
25
-
40
-
ns
Turn-OFF Time, tOFF
V+ = 1.8V, VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF (see Figure 1, Note 14)
Full
-
65
-
ns
Break-Before-Make Time
Delay, tD
V+ = 1.8V, VNO or VNC = 1.5V, RL = 50Ω,
CL = 35pF (see Figure 3, Note 14)
Full
-
44
-
ns
Charge Injection, Q
VG = 0, RG = 0Ω, CL = 1.0nF (see Figure 2)
25
-
8.2
-
pC
DIGITAL INPUT CHARACTERISTICS
Input Voltage Low, VINL
Full
-
-
0.4
V
Input Voltage High, VINH
Full
1
-
-
V
NOTES:
10. VIN = input voltage to perform proper function.
11. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data
sheet.
12. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by
characterization and are not production tested.
13. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal
range.
14. Limits established by characterization and are not production tested.
5
FN6551.2
October 26, 2009
ISL54503
Test Circuits and Waveforms
V+
LOGIC
INPUT
V+
tr < 20ns
tf < 20ns
50%
C
0V
tOFF
SWITCH
INPUT VNO
COM
VOUT
IN
90%
90%
SWITCH
OUTPUT
VOUT
NO OR NC
SWITCH
INPUT
0V
LOGIC
INPUT
RL
50Ω
GND
CL
35pF
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
Repeat test for all switches. CL includes fixture and stray
capacitance.
RL
----------------------V OUT = V
(NO or NC) R + r
L
ON
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1B. TEST CIRCUIT
FIGURE 1. SWITCHING TIMES
V+
SWITCH
OUTPUT
VOUT
LOGIC
INPUT
RG
ΔVOUT
ON
VINH
ON
OFF
C
VG
GND
VOUT
COM
NO OR NC
IN
CL
VINL
LOGIC
INPUT
Q = ΔVOUT x CL
FIGURE 2A. MEASUREMENT POINTS
FIGURE 2B. TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
V+
LOGIC
INPUT
V+
C
NO
VNX
RL
50Ω
0V
IN
SWITCH
OUTPUT
VOUT
90%
0V
VOUT
COM
NC
CL
35pF
GND
LOGIC
INPUT
tD
CL includes fixture and stray capacitance.
FIGURE 3A. MEASUREMENT POINTS
FIGURE 3B. TEST CIRCUIT
FIGURE 3. BREAK-BEFORE-MAKE TIME
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FN6551.2
October 26, 2009
ISL54503
Test Circuits and Waveforms (Continued)
V+
V+
C
C
SIGNAL
GENERATOR
rON = V1/I1 *
NO OR NC
NO OR NC
VNX
IN
I1
0V OR V+
IN
V1
VINL OR VINH
100mA
COM
COM
ANALYZER
GND
GND
RL
* I = 10mA AT V+ = 1.8V
1
FIGURE 4. OFF-ISOLATION TEST CIRCUIT
FIGURE 5. rON TEST CIRCUIT
V+
V+
C
C
50Ω
NO OR NC
NO OR NC
COM
IN
IN1
SIGNAL
GENERATOR
0V OR V+
VINL OR VINH
IMPEDANCE
ANALYZER
COM
NC OR NO
ANALYZER
GND
GND
RL
FIGURE 6. CROSSTALK TEST CIRCUIT
Detailed Description
The ISL54503 is a bi-directional, single pole/double
throw (SPDT) analog switch that offers precise
switching capability from a single 1.8V to 5.5V supply
with low ON-resistance (2.5Ω) and high speed
operation (tON = 25ns, tOFF = 15ns). The device is
especially well suited for portable battery powered
equipment due to its low operating supply voltage
(1.8V), low power consumption (0.15µW), low
leakage currents (300nA max), and the small µTDFN
and SOT-23 packages. The low ON-resistance and rON
flatness provide very low insertion loss and distortion
to application that require signal reproduction.
FIGURE 7. CAPACITANCE TEST CIRCUIT
parasitic SCR structures to turn ON, creating a low
impedance path from the V+ power supply to ground.
This will result in a significant amount of current flow in
the IC, which can potentially create a latch-up state or
permanently damage the IC. The external V+ resistor
limits the current during this over-stress situation and
has been found to prevent latch-up or destructive
damage for many overvoltage transient events.
Under normal operation, the sub-microamp IDD
current of the IC produces an insignificant voltage drop
across the 100Ω series resistor resulting in no impact
to switch operation or performance.
External V+ Series Resistor
For improved ESD and latch-up immunity Intersil
recommends adding a 100Ω resistor in series with the
V+ power supply pin of the ISL54050 IC
(see Figure 8).
During an overvoltage transient event (such as occurs
during system level IEC 61000 ESD testing), substrate
currents can be generated in the IC that can trigger
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FN6551.2
October 26, 2009
ISL54503
V+
OPTIONAL
PROTECTION
RESISTOR
C
OPTIONAL
SCHOTTKY
DIODE
V+
100Ω
OPTIONAL
PROTECTION
RESISTOR
NO
COM
NC
INX
VNX
VCOM
IN
GND
OPTIONAL
SCHOTTKY
DIODE
FIGURE 8. V+ SERIES RESISTOR FOR ENHANCED
ESD AND LATCH-UP IMMUNITY
Supply Sequencing And Overvoltage
Protection
With any CMOS device, proper power supply
sequencing is required to protect the device from
excessive input currents, which might permanently
damage the IC. All I/O pins contain ESD protection
diodes from the pin to V+ and to GND (see Figure 9).
To prevent forward biasing these diodes, V+ must be
applied before any input signals, and the input signal
voltages must remain between V+ and GND.
If these conditions cannot be guaranteed then
precautions must be implemented to prohibit the
current and voltage at the logic pin and signal pins
from exceeding the maximum ratings of the switch.
The following two methods can be used to provide
additional protection to limit the current in the event
that the voltage at a signal pin or logic pin goes below
ground or above the V+ rail.
Logic inputs can easily be protected by adding a 1kΩ
resistor in series with the input (see Figure 9). The
resistor limits the input current below the threshold
that produces permanent damage, and the
sub-microamp input current produces an insignificant
voltage drop during normal operation.
This method is not acceptable for the signal path
inputs. Adding a series resistor to the switch input
defeats the purpose of using a low rON switch.
Connecting Schottky diodes to the signal pins (as
shown in Figure 9) will shunt the fault current to the
supply or to ground, thereby protecting the switch.
These Schottky diodes must be sized to handle the
expected fault current.
GND
FIGURE 9. OVERVOLTAGE PROTECTION
Power-Supply Considerations
The ISL54503 construction is typical of most single
supply CMOS analog switches, in that they have two
supply pins: V+ and GND. V+ and GND drive the
internal CMOS switches and set their analog voltage
limits. Unlike switches with a 4V maximum supply
voltage, the ISL54503 5.5V maximum supply voltage
provides plenty of room for the 10% tolerance of 3.6V
supplies, as well as room for overshoot and noise
spikes.
The minimum recommended supply voltage is 1.8V but
the part will operate with a supply below 1.8V. It is
important to note that the input signal range, switching
times, and ON-resistance degrade at lower supply
voltages. Refer to the “Electrical Specifications” tables
starting on page 3 and the “Typical Performance
Curves” starting on page 10 for details.
V+ and GND also power the internal logic and level
shifters. The level shifters convert the input logic levels
to switched V+ and GND signals to drive the analog
switch gate terminals.
This family of switches cannot be operated with bipolar
supplies, because the input switching point becomes
negative in this configuration.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and
1.4V) over a supply range of 2V to 3.6V (see
Figure 16). At 3.6V the VIH level is about 0.95V. This is
still below the 1.8V CMOS guaranteed high output
minimum level of 1.4V, but noise margin is reduced.
The digital input stages draw supply current whenever
the digital input voltage is not at one of the supply
rails. Driving the digital input signals from GND to V+
with a fast transition time minimizes power dissipation.
High-Frequency Performance
In 50Ω systems, the ISL54503 has a -3dB bandwidth
of 250MHz (see Figure 17). The frequency response is
very consistent over a wide V+ range, and for varying
analog signal levels.
8
FN6551.2
October 26, 2009
ISL54503
An OFF switch behaves like a capacitor and passes
higher frequencies with less attenuation, resulting in
signal feed-through from a switch’s input to output.
Off-isolation is the resistance of this signal
feed-through. Figure 18 details the high off-isolation
provided by the ISL54503. At 1MHz, off-isolation is
about 70dB in 50Ω systems, decreasing approximately
20dB per decade as frequency increases. Higher load
impedances decrease off-isolation due to the voltage
divider action of the switch OFF impedance and the
load impedance.
Leakage Considerations
ESD protection diodes are internally connected
between each analog-signal pin and both V+ and GND.
One of these diodes conducts if any analog signal
exceeds V+ or GND.
Virtually all the analog leakage current comes from the
ESD diodes to V+ or GND. Although the ESD diodes on
a given signal pin are identical and therefore fairly well
balanced, they are reverse biased differently. Each is
biased by either V+ or GND and the analog signal. This
means their leakages will vary as the signal varies. The
difference in the two diode leakages to the V+ and
GND pins constitutes the analog-signal-path leakage
current. All analog leakage current flows between each
pin and one of the supply terminals, not to the other
switch terminal. This is why both sides of a given
switch can show leakage currents of the same or
opposite polarity. There is no connection between the
analog signal paths and V+ or GND.
9
FN6551.2
October 26, 2009
ISL54503
Typical Performance Curves
TA = 25°C, Unless Otherwise Specified
4.0
3.0
ICOM = 100mA
3.5
2.5
V+ = 2.7V
3.0
+85°C
+25°C
2.0
rON (Ω)
rON (Ω)
2.0
V+ = 3V
2.5
V+ = 4.5V
1.5
1.5
-40°C
1.0
V+ = 5V
1.0
0.0
V+ = 4.5V
ICOM = 100mA
0.5
0.5
0
1
2
3
4
0.0
0
5
0.5
1.0
1.5
2.0 2.5
VCOM (V)
VCOM (V)
FIGURE 10. ON-RESISTANCE vs SUPPLY VOLTAGE vs
SWITCH VOLTAGE
3.5
4.5
8
V+ = 2.7V
ICOM = 100mA
4.5
V+ = 1.8V
ICOM = 10mA
7
4.0
6
+85°C
3.5
rON (Ω)
+85°C
3.0
+25°C
5
+25°C
4
2.5
-40°C
-40°C
3
2.0
2
1.5
1.0
4.0
FIGURE 11. ON-RESISTANCE vs SWITCH VOLTAGE
5.0
rON (Ω)
3.0
0
0.5
1.0
1.5
2.0
1
2.5
0
0.2
0.4
0.6
VCOM (V)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VCOM (V)
FIGURE 12. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 13. ON-RESISTANCE vs SWITCH VOLTAGE
100
70
-40°C
90
-40°C
60
80
50
70 +25°C
+25°C
tOFF (ns)
tON (ns)
60
50
40 +85°C
40
30
+85°C
30
20
20
10
10
0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V+ (V)
FIGURE 14. TURN-ON TIME vs SUPPLY VOLTAGE
10
6.0
0
1.5
2.0
2.5
3.0
3.5
4.0
V+ (V)
4.5
5.0
5.5
6.0
FIGURE 15. TURN-OFF TIME vs SUPPLY VOLTAGE
FN6551.2
October 26, 2009
ISL54503
Typical Performance Curves
TA = 25°C, Unless Otherwise Specified (Continued)
1.4
0
-1
NORMALIZED GAIN (dB)
VINH AND VINL (V)
V+ = 1.8V TO 5.5V
VCOM = 1VP-P
-2
1.2
1.0
VINH
0.8
VINL
0.6
-3
-4
-5
-6
-7
-8
-9
-10
0.4
-11
-12
0.2
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-13
100k
5.5
1M
10M
FIGURE 16. DIGITAL SWITCHING POINT vs SUPPLY
VOLTAGE
25
V+ = 1.8V TO 5.5V
20
-40
15
-50
10
Q (pC)
(dB)
-60
-70
-80
5
0
V+ = 5V
-5
-90
V+ = 1.8V
-10
-100
V+ = 3.3V
-15
-110
-120
1k
1G
FIGURE 17. FREQUENCY RESPONSE
-20
-30
100M
FREQUENCY (Hz)
V+ (V)
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FIGURE 18. OFF-ISOLATION
1G
-20
0.0
0.5
1.0
1.5
2.0 2.5 3.0
VCOM (V)
3.5
4.0
4.5
5.0
FIGURE 19. CHARGE INJECTION vs SWITCH
VOLTAGE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
GND
TRANSISTOR COUNT:
PROCESS:
Submicron CMOS
11
FN6551.2
October 26, 2009
ISL54503
Ultra Thin Dual Flat No-Lead Plastic Package (UTDFN)
A
E
L6.1.2x1.0A
B
6 LEAD ULTRA THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE
MILLIMETERS
PIN 1
REFERENCE
2X
0.10C
2X
0.10C
TOP VIEW
MIN
NOMINAL
MAX
NOTES
A
0.45
0.50
0.55
-
A1
-
-
0.05
-
A3
DETAIL A
0.10C
7X
SYMBOL
D
A
0.08C
A1 A3
SIDE VIEW
C
SEATING
PLANE
4X
e
DETAIL B
1
5X
L
3
L1
-
0.127 REF
b
0.15
0.20
0.25
5
D
0.95
1.00
1.05
-
E
1.15
1.20
1.25
-
e
-
0.40 BSC
L
0.30
0.35
0.40
-
L1
0.40
0.45
0.50
-
N
6
2
Ne
3
3
θ
0
-
4
12
Rev. 2 8/06
NOTES:
6
4
BOTTOM VIEW
b 6X
0.10 C A B
0.05C NOTE 3
1. Dimensioning and tolerancing conform to ASME Y14.51994.
2. N is the number of terminals.
3. Ne refers to the number of terminals on E side.
4. All dimensions are in millimeters. Angles are in degrees.
0.1x45°
CHAMFER
5. Dimension b applies to the metallized terminal and is
measured between 0.15mm and 0.30mm from the
terminal tip.
6. The configuration of the pin #1 identifier is optional, but
must be located within the zone indicated. The pin #1
identifier may be either a mold or mark feature.
A3
A1
7. Maximum package warpage is 0.05mm.
DETAIL A
DETAIL B PIN 1 LEAD
8. Maximum allowable burrs is 0.076mm in all directions.
9. JEDEC Reference MO-255.
10. For additional information, to assist with the PCB Land
Pattern Design effort, see Intersil Technical Brief TB389.
1.00
1.40
0.20
0.30
0.45
0.20
0.35
0.40
LAND PATTERN 10
12
FN6551.2
October 26, 2009
ISL54503
SOT-23 Package Family
MDP0038
e1
D
SOT-23 PACKAGE FAMILY
A
MILLIMETERS
6
N
SYMBOL
4
E1
2
E
3
0.15 C D
1
2X
2
3
0.20 C
5
2X
e
0.20 M C A-B D
B
b
NX
0.15 C A-B
1
3
SOT23-5
SOT23-6
A
1.45
1.45
MAX
A1
0.10
0.10
±0.05
A2
1.14
1.14
±0.15
b
0.40
0.40
±0.05
c
0.14
0.14
±0.06
D
2.90
2.90
Basic
E
2.80
2.80
Basic
E1
1.60
1.60
Basic
e
0.95
0.95
Basic
e1
1.90
1.90
Basic
L
0.45
0.45
±0.10
L1
0.60
0.60
Reference
N
5
6
Reference
D
2X
TOLERANCE
Rev. F 2/07
NOTES:
C
A2
2. Plastic interlead protrusions of 0.25mm maximum per side are not
included.
SEATING
PLANE
A1
0.10 C
1. Plastic or metal protrusions of 0.25mm maximum per side are not
included.
3. This dimension is measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994.
NX
5. Index area - Pin #1 I.D. will be located within the indicated zone
(SOT23-6 only).
(L1)
6. SOT23-5 version has no center lead (shown as a dashed line).
H
A
GAUGE
PLANE
c
L
0.25
0° +3°
-0°
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13
FN6551.2
October 26, 2009