DF N1 01 0D -3 PBHV8515QA 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 19 November 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBHV9515QA. 2. Features and benefits • • • • • • • High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC Low package height of 0.37 mm AEC-Q101 qualified Suitable for Automatic Optical Inspection (AOI) of solder joint 3. Applications • • • • LED driver for LED chain module High Intensity Discharge (HID) front lighting Automotive motor management Switch Mode Power Supply (SMPS) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 150 V IC collector current - - 500 mA hFE DC current gain 100 215 - VCE = 10 V; IC = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 E emitter 3 C collector 4 C collector Simplified outline Graphic symbol C 1 B 4 3 E sym123 2 Transparent top view DFN1010D-3 (SOT1215) 6. Ordering information Table 3. Ordering information Type number Package PBHV8515QA Name Description Version DFN1010D-3 DFN1010D-3: plastic thermal enhanced ultra thin small outline package; no leads; 3 terminals; body 1.1 x 1.0 x 0.37 mm SOT1215 7. Marking Table 4. Marking codes Type number Marking code PBHV8515QA 00 00 11 MARKING CODE (EXAMPLE) READING DIRECTION YEAR DATE CODE VENDOR CODE PIN 1 INDICATION MARK MARK-FREE AREA READING EXAMPLE: 11 01 10 Fig. 1. aaa-008041 DFN1010D-3 (SOT1215) binary marking code description PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 150 V VCEO collector-emitter voltage open base - 150 V VEBO emitter-base voltage open collector - 6 V IC collector current - 500 mA ICM peak collector current - 1 A IBM peak base current - 200 mA Ptot total power dissipation [1] - 325 mW [2] - 600 mW [3] - 740 mW [4] - 540 mW [5] - 1 W single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] [4] [5] PBHV8515QA Product data sheet Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm . All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor aaa-007844 1.25 Ptot (W) 1.00 (1) 0.75 (2) (3) 0.50 (4) (5) 0.25 0 -75 (1) FR4 PCB, 4-layer copper, 1 cm -25 25 75 125 175 Tamb (°C) 2 (2) FR4 PCB, single-sided copper, 6 cm 2 2 (3) FR4 PCB, single-sided copper, 1 cm (4) FR4 PCB, 4-layer copper, standard footprint (5) FR4 PCB, single-sided copper, standard footprint Fig. 2. Power derating curves PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 385 K/W [2] - - 209 K/W [3] - - 169 K/W [4] - - 232 K/W [5] - - 125 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint. [4] [5] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 2 Device mounted on an FR4 PCB, 4-layer copper, tin-plated, mounting pad for collector 1 cm . aaa-007845 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, standard footprint Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor aaa-007846 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 0 1 10-1 10-5 10-4 10-3 10-2 FR4 PCB, single-sided copper, 1 cm Fig. 4. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-007848 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 1 10-5 0.01 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, 4-layer copper, standard footprint Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor aaa-007849 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 10-5 0 0.01 10-4 10-3 FR4 PCB, 4-layer copper, 1 cm Fig. 6. 10-2 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 120 V; IE = 0 A; Tamb = 25 °C - - 100 nA VCB = 120 V; IE = 0 A; Tj = 150 °C - - 10 µA ICES collector-emitter cut-off VCE = 120 V; VBE = 0 V; Tamb = 25 °C current - - 100 nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA hFE DC current gain VCE = 10 V; IC = 50 mA; pulsed; 100 215 - 100 215 - 100 200 - 35 60 - IC = 50 mA; IB = 5 mA; Tamb = 25 °C - 30 60 mV IC = 100 mA; IB = 10 mA; pulsed; - 45 80 mV - 35 70 mV - 60 100 mV IC = 500 mA; IB = 100 mA; pulsed; - 120 200 mV VBEsat base-emitter saturation tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C voltage - 0.95 1.2 V td delay time VCC = 10 V; IC = 100 mA; IBon = 20 mA; - 15 - ns tr rise time IBoff = -20 mA; Tamb = 25 °C - 155 - ns ton turn-on time - 170 - ns ts storage time - 650 - ns tf fall time - 170 - ns toff turn-off time - 820 - ns fT transition frequency - 75 - MHz - 2.4 - pF tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 10 V; IC = 100 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 10 V; IC = 200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 10 V; IC = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCEsat collector-emitter saturation voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 100 mA; IB = 20 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 200 mA; IB = 40 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 10 V; IC = 10 mA; f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = 20 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor Symbol Parameter Conditions Min Typ Max Unit Ce emitter capacitance VEB = 0.5 V; IC = 0 A; ic = 0 A; - 125 - pF f = 1 MHz; Tamb = 25 °C aaa-020477 400 aaa-020478 1.0 IB (mA) = 55 IC (A) hFE 49.5 44 0.8 300 38.5 33 27.5 (1) 0.6 (2) 200 22 16.5 11 0.4 5.5 (3) 100 0 10-1 0.2 1 10 102 0.0 103 104 IC (mA) VCE = 10 V 1 2 3 4 VCE (V) 5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 8. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 7. 0 DC current gain as a function of collector current; typical values aaa-020479 1.2 aaa-020480 1.2 VBEsat (V) VBE (V) 1.0 (1) 0.8 (1) 0.8 (2) (2) (3) 0.6 (3) 0.4 0.4 0.0 10-1 Fig. 9. 1 10 102 0.2 10-1 103 104 IC (mA) 1 10 VCE = 10 V IC/IB = 5 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb= 100 °C Base-emitter voltage as a function of collector current; typical values PBHV8515QA Product data sheet 102 103 104 IC (mA) Fig. 10. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor aaa-020481 1 aaa-020482 10 VCEsat (V) VCEsat (V) (2) (3) 1 10-1 (1) 10-1 (1) (2) (3) 10-2 10-1 1 102 10 10-2 10-1 103 104 IC (mA) 1 IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Fig. 11. Collector-emitter saturation voltage as a function of collector current; typical values aaa-020483 103 10 102 103 104 IC (mA) Fig. 12. Collector-emitter saturation voltage as a function of collector current; typical values aaa-020484 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) 1 1 (1) (2) (2) (3) (3) 10-1 10-1 1 10 102 10-1 10-1 103 104 IC (mA) 1 IC/IB = 5 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Fig. 13. Collector-emitter saturation resistance as a function of collector current; typical values PBHV8515QA Product data sheet 10 102 103 104 IC (mA) Fig. 14. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 15. BISS transistor switching time definition VBB RB (probe) oscilloscope 450 Ω VCC RC Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 16. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 12. Package outline 0.87 0.95 0.75 1 0.95 1.05 0.22 0.30 2 0.16 0.24 0.1 3 0.04 max 0.34 0.40 Dimensions in mm 0.17 0.25 0.245 0.325 1.05 1.15 0.195 0.275 13-03-05 Fig. 17. Package outline DFN1010D-3 (SOT1215) PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 13. Soldering Footprint information for reflow soldering of DFN1010D-3 package SOT1215 1.2 0.45 (2x) 0.3 1.1 0.35 (2x) 0.4 0.25 (2x) 0.75 0.3 0.5 1.5 1.4 0.4 0.5 0.4 0.3 0.5 1.3 0.4 0.3 0.4 0.5 1.3 solder land solder land plus solder paste occupied area solder resist Dimensions in mm Issue date 12-11-23 13-03-06 sot1215_fr Fig. 18. Reflow soldering footprint for DFN1010D-3 (SOT1215) PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBHV8515QA v.1 20151119 Product data sheet - - PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 17 PBHV8515QA NXP Semiconductors 150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 8 11 11.1 Test information ................................................... 11 Quality information ............................................. 11 12 Package outline ................................................... 12 13 Soldering .............................................................. 13 14 Revision history ................................................... 14 15 15.1 15.2 15.3 15.4 Legal information .................................................15 Data sheet status ............................................... 15 Definitions ...........................................................15 Disclaimers .........................................................15 Trademarks ........................................................ 16 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 November 2015 PBHV8515QA Product data sheet All information provided in this document is subject to legal disclaimers. 19 November 2015 © NXP Semiconductors N.V. 2015. All rights reserved 17 / 17