s7686 kspd1040e

Si photodiode
S7686
Photodiode with sensitivity close to spectral
luminous efficiency
S7686 is a Si photodiode having a spectral response characteristic that is more similar to the human eye sensitivity (spectral luminous
efficiency) than our conventional visible-compensated sensors (S1133, etc.).
Features
Applications
Spectral response analogous to CIE spectral luminous
efficiency
Spectral response range: 480 to 660 nm
Peak sensitivity wavelength: 550 nm
Illuminometer
Luminance meter
Ceramic package for reliability
Active area: 2.4 × 2.8 mm
High-speed response: 0.5 μs (VR=0 V, RL=1 kΩ)
fs value: 8 % Typ. (vertical light input)
Absolute maximum ratings (Ta=25 °C)
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
Condition
VR Max.
Topr
No dew condensation*1
Tstg
No dew condensation*1
Value
10
-10 to +60
-20 to +70
Unit
V
°C
°C
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation
may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Rise time
Terminal capacitance
Symbol
λ
λp
S
Isc
ID
tr
Ct
Condition
λ=λp
100 lx, 2856 K
VR=1 V
VR=0 V, RL=1 kΩ
VR=0 V, f=10 kHz
Min.
-
www.hamamatsu.com
Typ.
480 to 660
550
0.38
0.45
2
0.5
200
Max.
20
-
Unit
nm
nm
A/W
μA
pA
μs
pF
1
Si photodiode
S7686
Spectral response
Spectral response (relative value)
(Typ. Ta=25 °C)
0.6
(Typ. Ta=25 °C)
100
S7686
90
QE=100 %
80
Relative sensitivity (%)
Photosensitivity (A/W)
0.5
0.4
0.3
0.2
0.1
70
60
50
40
30 CIE luminous
spectral efficiency
20
10
0
200
400
600
800
1000
0
300
1200
400
500
600
700
800
900
Wavelength (nm)
Wavelength (nm)
KSPDB0133EC
KSPDB0092EC
Linearity
Dark current vs. reverse voltage
(Typ. Ta=25 °C, VR=0 V, 2856 K)
10-3
10-4
100 pA
Dark current
Short circuit current (A)
(Typ. Ta=25 °C)
1 nA
10-5
10-6
10-7
10 pA
1 pA
100 fA
10-8
1
10
100
1000
10000
100000
10 fA
0.01
0.1
1
10
Reverse voltage (V)
Illuminance (lx)
KSPDB0341EA
KSPDB0144EA
2
Si photodiode
S7686
Terminal capacitance vs. reverse voltage
(Typ. Ta=25 °C)
Terminal capacitance
10 nF
1 nF
100 pF
10 pF
0.1
1
10
Reverse voltage (V)
KSPDB0145EA
Directivity
10°
(Typ. Ta=25 °C)
20°
Cathode
terminal mark
30°
30°
+0
8.0 - 0.25
40°
50°
60°
60°
70°
60
40
20
0
20
40
60
80
90°
100
Photosensitive
surface
X direction
Filter
Relative sensitivity (%)
KSPDB0339EA
9±1
80
80°
0.1
Y direction
80°
0.6
70°
90°
100
Active area
2.8 × 2.4
50°
X direction
6.0 - 0.3
40°
Y direction
0°
1.5 ± 0.2
10°
+0.1
20°
Dimensional outline (unit: mm,
tolerance unless otherwise noted: ±0.15)
0.45
Lead
5.0 ± 0.2
KSPDA0089EB
3
Si photodiode
S7686
Related information
www.hamamatsu.com/sp/ssd/doc_en.html
Precautions
∙ Disclaimer
∙ Metal, ceramic, plastic products / Precautions
Technical information
∙ Si photodiode / Application circuit examples
Information described in this material is current as of April, 2016.
Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the
information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always
contact us for the delivery specification sheet to check the latest specifications.
The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that
one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use.
Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission.
www.hamamatsu.com
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741
China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866
Cat. No. KSPD1040E05 Apr. 2016 DN
4