PHPT61006PY 100 V, 6 A PNP high power bipolar transistor 21 January 2015 Product data sheet 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY 2. Features and benefits • • • • • High thermal power dissipation capability High temperature applications up to 175 °C Reduced Printed Circuit Board (PCB) requirements comparing to transistors in DPAK High energy efficiency due to less heat generation AEC-Q101 qualified. 3. Applications • • • • • • Power management Load switch Linear mode voltage regulator Backlighting applications Motor drive Relay replacement 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -100 V IC collector current - - -6 A ICM peak collector current tp ≤ 1 ms; single pulse - - -12 A RCEsat collector-emitter saturation resistance IC = -6 A; IB = -600 mA; tp ≤ 300 µs; - 85 270 mΩ δ ≤ 0.02; Tamb = 25 °C; pulsed Scan or click this QR code to view the latest information for this product PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter 2 E emitter 3 E emitter 4 B base mb C collector Simplified outline Graphic symbol C mb B E sym132 1 2 3 4 LFPAK56; PowerSO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number PHPT61006PY Package Name Description Version LFPAK56; Power-SO8 Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669 7. Marking Table 4. Marking codes Type number Marking code PHPT61006PY 1006PAB PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -100 V VCEO collector-emitter voltage open base - -100 V VEBO emitter-base voltage open collector - -8 V IC collector current - -6 A ICM peak collector current - -12 A IB base current - -1 A IBM peak base current tp ≤ 1 ms; pulsed - -2 A Ptot total power dissipation Tamb ≤ 25 °C [1] - 1.3 W [2] - 3.3 W [3] - 5 W [4] - 25 W tp ≤ 1 ms; single pulse Tj junction temperature - 175 °C Tamb ambient temperature -55 175 °C Tstg storage temperature -65 175 °C [1] PHPT61006PY Product data sheet [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 Printed-Circuit Board ( PCB), single-sided copper, tin-plated mounting pad for [3] [4] collector 6 cm . Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. Power dissipation from junction to mounting base. 2 All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor aaa-014224 6 (1) Ptot (W) 4 (2) 2 (3) 0 -75 25 125 Tamb (°C) 225 (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm (3) FR4 PCB, standard footprint Fig. 1. 2 Power derating curves 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-mb) thermal resistance from junction to mounting base [1] PHPT61006PY Product data sheet Min Typ Max Unit [1] - - 115 K/W [2] - - 45 K/W [3] - - 30 K/W - - 6 K/W [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad [3] for collector 6 cm . Device mounted on an ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint. 2 All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor aaa-014225 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 10 0.1 0.5 0.2 0.05 0.02 1 0.01 0.25 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-014226 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 10 0.33 0.5 0.2 0.1 0.05 1 0.01 10-1 10-5 0.02 0.25 0 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 6 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -80 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -80 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off VCE = -80 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -8 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -2 V; IC = -500 mA; Tamb = 25 °C 170 305 - VCE = -2 V; IC = -1 A; tp ≤ 300 µs; 160 275 - 45 90 - 10 20 - - -75 -130 mV - -150 -240 mV - -900 -1600 mV - 85 270 mΩ - -0.8 -0.95 V - -0.95 -1.1 V - -1.1 -1.25 V δ ≤ 0.02; Tamb = 25 °C; pulsed VCE = -2 V; IC = -3 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed VCE = -2 V; IC = -6 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = -1 A; IB = -50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -6 A; IB = -600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C RCEsat VBEsat collector-emitter saturation resistance IC = -6 A; IB = -600 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed base-emitter saturation IC = -1 A; IB = -50 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -6 A; IB = -600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEon base-emitter turn-on voltage VCE = -2 V; IC = -500 mA; Tamb = 25 °C - -0.7 -0.8 V td delay time VCC = -12.5 V; IC = -3 A; - 15 - ns tr rise time IBon = -150 mA; IBoff = 150 mA; - 220 - ns ton turn-on time - 235 - ns ts storage time - 160 - ns tf fall time - 185 - ns toff turn-off time - 345 - ns PHPT61006PY Product data sheet Tamb = 25 °C All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor Symbol Parameter Conditions Min Typ Max Unit fT transition frequency VCE = -10 V; IC = -500 mA; - 116 - MHz - 52 - pF f = 100 MHz; Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C aaa-015659 600 hFE aaa-015660 -8 IB = -540 mA IC (A) (1) -360 mA -6 400 -240 mA -140 mA (2) -75 mA -4 -25 mA (3) 200 -40 mA -15 mA -10 mA -2 -5 mA 0 -10-1 -1 -10 -102 0 -103 -104 IC (mA) VCE = -2 V -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 4. 0 Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor aaa-015661 -1.2 aaa-015662 -1.2 VBE (V) VBEsat (V) -1.0 -1.0 (1) -0.8 (2) -0.6 (1) -0.8 -0.6 (2) -0.4 (3) (3) -0.4 -0.2 -10-1 Fig. 6. -1 -102 -10 -0.2 -10-1 -103 -104 IC (mA) -1 -10 VCE = -2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Fig. 7. aaa-015663 -1 -102 -103 -104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values aaa-015664 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (1) (1) (2) (2) (3) (4) (3) -10-2 -10-1 Fig. 8. -1 -10 -102 -10-2 -10-1 -103 -104 IC (mA) -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 20 Collector-emitter saturation voltage as a function of collector current; typical values (4) IC/IB = 10 PHPT61006PY Product data sheet Fig. 9. -102 -103 -104 IC (mA) Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 21 January 2015 -10 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor aaa-015665 103 aaa-015666 103 RCEsat (Ω) RCEsat (Ω) 102 102 (1) (2) (3) 10 10 (1) 1 10-1 10-2 -10-1 1 (2) (4) 10-1 (3) -1 -10 -102 10-2 -10-1 -103 -104 IC (mA) -1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 20 Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values PHPT61006PY Product data sheet -10 -102 -103 -104 IC (mA) (4) IC/IB = 10 Fig. 11. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 11. Test information - IB input pulse (idealized waveform) 90 % - I Bon (100 %) 10 % - I Boff output pulse (idealized waveform) - IC 90 % - I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig. 12. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 VI oscilloscope DUT R1 mgd624 Fig. 13. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 12. Package outline Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads E A2 A SOT669 C c2 b2 E1 b3 L1 mounting base b4 D1 D H L2 1 2 3 e 4 w b A X c 1/2 e A (A3) A1 C q L detail X 0 y C θ 5 mm 8° scale 0° Dimensions (mm are the original dimensions) Unit(1) A A1 A2 A3 b b2 max 1.20 0.15 1.10 0.50 4.41 nom 0.25 min 1.01 0.00 0.95 0.35 3.62 mm c c2 D(1) D1(1) E(1) E1(1) b3 b4 2.2 0.9 0.25 0.30 4.10 4.20 5.0 3.3 2.0 0.7 0.19 0.24 3.80 4.8 3.1 e 1.27 H L L1 L2 6.2 0.85 1.3 1.3 5.8 0.40 0.8 0.8 Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. Outline version SOT669 References IEC JEDEC JEITA w y 0.25 0.1 sot669_po European projection Issue date 11-03-25 13-02-27 MO-235 Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669) PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 13. Soldering Footprint information for reflow soldering SOT669 4.7 4.2 0.9 (3×) 0.25 (2×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 2 3.5 2.55 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu - 0.050 0.7 (4×) 1.27 3.81 solder lands solder paste 125 µm stencil solder resist occupied area Dimensions in mm sot669_fr Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669) PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PHPT61006PY v.1 20150121 Product data sheet - - PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. 15.3 Disclaimers Limited warranty and liability — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors. PHPT61006PY Product data sheet Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 14 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE, MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP Semiconductors N.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 16 PHPT61006PY NXP Semiconductors 100 V, 6 A PNP high power bipolar transistor 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ................................................... 10 Quality information ............................................. 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 21 January 2015 PHPT61006PY Product data sheet All information provided in this document is subject to legal disclaimers. 21 January 2015 © NXP Semiconductors N.V. 2015. All rights reserved 16 / 16