Data Sheet

LFP
AK
56
D
PHPT610030NK
NPN/NPN high power double bipolar transistor
20 October 2014
Product data sheet
1. General description
NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) SurfaceMounted Device (SMD) power plastic package.
PNP/PNP complement: PHPT610030PK.
NPN/PNP complement: PHPT610030NPK.
2. Features and benefits
•
•
•
•
•
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Motor control
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Relay replacement
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VCEO
collector-emitter
voltage
open base
-
-
100
V
IC
collector current
-
-
3
A
-
75
110
mΩ
Per transistor
Per transistor
RCEsat
collector-emitter
saturation resistance
IC = 3 A; IB = 0.3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02; Tamb = 25 °C
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PHPT610030NK
NXP Semiconductors
NPN/NPN high power double bipolar transistor
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
1
E1
emitter TR1
2
B1
base TR1
3
E2
emitter TR2
4
B2
base TR2
5
C2
collector TR2
6
C2
collector TR2
7
C1
collector TR1
8
C1
collector TR1
Simplified outline
8
7
6
Graphic symbol
5
C1
B2
E2
TR2
TR1
E1
B1
C2
sym140
1
2
3
4
LFPAK56D (SOT1205)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PHPT610030NK
Name
Description
Version
LFPAK56D
Plastic single ended surface mounted package (LFPAK56D); 8
leads
SOT1205
7. Marking
Table 4.
Marking codes
Type number
Marking code
PHPT610030NK
10030NK
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
100
V
VCEO
collector-emitter voltage
open base
-
100
V
VEBO
emitter-base voltage
open collector
-
7
V
IC
collector current
-
3
A
ICM
peak collector current
-
8
A
IB
base current
-
0.5
A
Per transistor
PHPT610030NK
Product data sheet
single pulse; tp ≤ 1 ms
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NXP Semiconductors
NPN/NPN high power double bipolar transistor
Symbol
Parameter
Conditions
Ptot
total power dissipation
Tamb ≤ 25 °C
Min
Max
Unit
[1]
-
1
W
[2]
-
2.4
W
[3]
-
25
W
[1]
-
1.25
W
[4]
-
5
W
[2]
-
3
W
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C
Tj
junction temperature
-
175
°C
Tstg
storage temperature
-65
175
°C
Tamb
ambient temperature
-55
175
°C
[1]
[2]
[3]
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Power dissipation from junction to mounting base.
Device mounted on a ceramic PCB, Al2O3, standard footprint.
aaa-014341
4
Ptot
(W)
3
(1)
2
1
(2)
0
-75
0
75
(1) FR4 PCB, mounting pad for collector 6 cm
(2) FR4 PCB, standard footprint
Fig. 1.
150
225
Tamb (°C)
2
Per transistor: power derating curves
PHPT610030NK
Product data sheet
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NPN/NPN high power double bipolar transistor
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
thermal resistance
from junction to
ambient
in free air
Min
Typ
Max
Unit
[1]
-
-
150
K/W
[2]
-
-
62.5
K/W
-
-
6
K/W
[1]
-
-
120
K/W
[2]
-
-
50
K/W
[3]
-
-
30
K/W
Per transistor
Rth(j-a)
Rth(j-sp)
thermal resistance
from junction to solder
point
Per device
Rth(j-a)
thermal resistance
from junction to
ambient
[1]
[2]
[3]
in free air
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
aaa-014342
103
Zth(j-a)
(K/W)
102
duty cycle = 1
0.75
0.33
0.2
10
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm .
Device mounted on a ceramic PCB, Al2O3, standard footprint.
0.05
0.01
1
10-1
10-5
0.5
0.25
0.1
0.02
0
10-4
10-3
10-2
10-1
1
10
102
tp (s)
103
FR4 PCB, standard footprint
Fig. 2.
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PHPT610030NK
Product data sheet
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NXP Semiconductors
NPN/NPN high power double bipolar transistor
aaa-014343
102
Zth(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
10
0.25
0.2
0.1
0.05
1
0.02
0
0.01
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for collector 6 cm
Fig. 3.
10-1
1
102
10
tp (s)
103
2
Per transistor: transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
collector-base cut-off
current
VCB = 80 V; IE = 0 A; Tamb = 25 °C
-
-
100
nA
VCB = 80 V; IE = 0 A; Tj = 150 °C
-
-
50
µA
Per transistor
ICBO
ICES
collector-emitter cut-off VCE = 80 V; VBE = 0 V; Tamb = 25 °C
current
-
-
100
nA
IEBO
emitter-base cut-off
current
VEB = 7 V; IC = 0 A; Tamb = 25 °C
-
-
100
nA
hFE
DC current gain
VCE = 10 V; IC = 500 mA; pulsed;
150
250
-
80
250
-
20
100
-
10
40
-
-
90
150
mV
-
225
330
mV
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 1 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 2 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 3 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCEsat
collector-emitter
saturation voltage
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
PHPT610030NK
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NPN/NPN high power double bipolar transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RCEsat
collector-emitter
saturation resistance
IC = 3 A; IB = 0.3 A; pulsed; tp ≤ 300 µs;
-
75
110
mΩ
-
0.86
1
V
-
1
1.2
V
-
0.67
0.85
V
δ ≤ 0.02; Tamb = 25 °C
base-emitter saturation IC = 1 A; IB = 50 mA; pulsed;
voltage
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEsat
IC = 2 A; IB = 200 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VBEon
base-emitter turn-on
voltage
VCE = 2 V; IC = 0.1 A; pulsed;
td
delay time
VCC = 12.5 V; IC = 1 A; IBon = 50 mA;
-
20
-
ns
tr
rise time
IBoff = -50 mA; Tamb = 25 °C
-
300
-
ns
ton
turn-on time
-
320
-
ns
ts
storage time
-
830
-
ns
tf
fall time
-
470
-
ns
toff
turn-off time
-
1300
-
ns
fT
transition frequency
-
140
-
MHz
-
11
-
pF
tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C
VCE = 10 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
Cc
collector capacitance
VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
aaa-010261
400
hFE
(1)
aaa-010267
3
IB = 50 mA
45
IC
(A)
300
40
35
30
2
(2)
200
25
20
15
10
(3)
1
5
100
0
10-1
1
10
102
0
103
104
IC (mA)
VCE = 10 V
1
2
3
4
VCE (V)
5
Tamb = 25 °C
(1) Tamb = 100 °C
Fig. 5.
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 4.
0
Collector current as a function of collectoremitter voltage; typical values
DC current gain as a function of collector
current; typical values
PHPT610030NK
Product data sheet
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NXP Semiconductors
NPN/NPN high power double bipolar transistor
aaa-010262
1.2
aaa-010265
1.4
VBE
(V)
VBEsat
(V)
(1)
0.8
1.0
(2)
(1)
(3)
0.4
0.6
(2)
(3)
0
10-1
Fig. 6.
1
102
10
103
0.2
10-1
104
105
IC (mA)
1
102
10
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(3) Tamb = 100 °C
Base-emitter voltage as a function of collector
current; typical values
Fig. 7.
aaa-010263
1
103
104
105
IC (mA)
Base-emitter saturation voltage as a function of
collector current; typical values
aaa-010264
10
VCEsat
(V)
VCEsat
(V)
1
10-1
(2)
(1)
(1)
(2)
(3)
10-1
(3)
10-2
10-2
10-3
10-1
Fig. 8.
1
10
102
10-3
10-1
103
104
IC (mA)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Collector-emitter saturation voltage as a
function of collector current; typical values
PHPT610030NK
Product data sheet
Fig. 9.
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values
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NXP Semiconductors
NPN/NPN high power double bipolar transistor
aaa-010266
103
RCEsat
(Ω)
RCEsat
(Ω)
102
102
10
10
(1)
1
aaa-010268
103
1
(2)
10-1
10-2
10-1
(1)
(3)
1
10
102
(2)
10-1
10-2
10-1
103
104
IC (mA)
(3)
1
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(1) IC/IB = 50
(2) Tamb = 25 °C
(2) IC/IB = 20
(3) Tamb = −55 °C
(3) IC/IB = 10
Fig. 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PHPT610030NK
Product data sheet
10
102
103
104
IC (mA)
Fig. 11. Collector-emitter saturation resistance as a
function of collector current; typical values
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NPN/NPN high power double bipolar transistor
11. Test information
IB
input pulse
(idealized waveform)
90 %
IBon (100 %)
10 %
IBoff
output pulse
(idealized waveform)
IC
90 %
IC (100 %)
10 %
t
td
ts
tr
ton
tf
toff
006aaa003
Fig. 12. BISS transistor switching time definition
VBB
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
VI
oscilloscope
DUT
R1
mlb826
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PHPT610030NK
Product data sheet
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NPN/NPN high power double bipolar transistor
12. Package outline
Plastic single ended surface mounted package LFPAK56D; 8 leads
E
SOT1205
A
A
b1
c1
L1
mounting
base
D
H
D1
D2
L
1
2
3
e
b
(8x)
4
w
X
c
A
E1
E2
A1
C
θ
Lp
detail X
0
2.5
A
max 1.05
nom
min
mm
5 mm
scale
Dimensions
Unit
y C
c
c1
D(1) D1(1)
A1
b
b1
0.1
0.50
4.4
0.25 0.30 4.70
0.0
0.35
4.1
0.19 0.24 4.45
4.8
D2
(ref)
3.5
E(1) E1(1)
5.30
1.8
4.95
1.6
E2
0.85
e
1.27
H
L
L1
Lp
6.2
1.3
0.55 0.85
5.9
0.8
0.30 0.40
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
Outline
version
References
IEC
JEDEC
JEITA
w
y
θ
0.25
0.1
8°
0°
sot1205_po
European
projection
Issue date
13-02-21
14-08-21
SOT1205
Fig. 14. Package outline LFPAK56D (SOT1205)
PHPT610030NK
Product data sheet
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NPN/NPN high power double bipolar transistor
13. Soldering
Footprint information for reflow soldering of LFPAK56D package
SOT1205
5.85
3.81
1.27
0.7 (4x)
3.2
3.175
3.325
2.0
1.275
0.8
1.875
2.1
1.0 (2x)
2.7
3.85 3.975
0.0625
0.025
0.7 (4x)
1.44
1.27
1.1 (2x)
3.81
solder land
solder land plus solder paste
solder paste deposit
solder resist
occupied area
Dimensions in mm
sot1205_fr
Fig. 15. Reflow soldering footprint for LFPAK56D (SOT1205)
PHPT610030NK
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NPN/NPN high power double bipolar transistor
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PHPT610030NK v.1
20141020
Product data sheet
-
-
PHPT610030NK
Product data sheet
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NPN/NPN high power double bipolar transistor
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or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
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Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
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Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
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customer have explicitly agreed otherwise in writing. In no event however,
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is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PHPT610030NK
Product data sheet
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make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
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Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
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representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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NPN/NPN high power double bipolar transistor
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15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,
HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,
MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PHPT610030NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
14 / 15
PHPT610030NK
NXP Semiconductors
NPN/NPN high power double bipolar transistor
16. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
11.1
Test information ..................................................... 9
Quality information ............................................... 9
12
Package outline ................................................... 10
13
Soldering .............................................................. 11
14
Revision history ................................................... 12
15
15.1
15.2
15.3
15.4
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 20 October 2014
PHPT610030NK
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 October 2014
© NXP Semiconductors N.V. 2014. All rights reserved
15 / 15