Schottky Barrier Diodes (SBD) MA6Z718 (MA6S718) Silicon epitaxial planar type Unit: mm For switching 2.0±0.1 (0.65)(0.65) 4 1 2 3 1.25±0.1 2.1±0.1 ■ Features • Three isolated elements are contained in one package, allowing high-density mounting • Forward voltage VF , optimum for low voltage rectification • Optimum for high frequency rectification because of its short reverse recovery time trr 5˚ Rating Unit VR 30 V Maximum peak reverse voltage VRM 30 V Peak forward current IFM 150 mA IF 30 mA * Forward current * Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 1: Anode 1 2: Anode 2 3: Anode 3 EIAJ: SC-88 (0.15) 0 to 0.1 Symbol Reverse voltage 0.16+0.10 –0.06 0.2±0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 0.7±0.1 (0.425) 5 5˚ 6 4: Cathode 3 5: Cathode 2 6: Cathode 1 SMini6-F1 Package Marking Symbol: M2N Internal Connection 6 5 4 1 2 3 Note) *: Value for single diode ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit V VF1 IF = 1 mA 0.4 VF2 IF = 30 mA 1.0 Reverse current IR VR = 30 V Terminal capacitance Ct VR = 1 V, f = 1 MHz 1.5 pF trr IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω 1.0 ns η VIN = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 65 % Forward voltage Reverse recovery time * Detection efficiency 1 µA Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 2 GHz. 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A 90% VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: April 2004 Wave Form Analyzer (SAS-8130) Ri = 50 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Note) The part number in the parenthesis shows conventional part number. SKH00114BED 1 MA6Z718 IF V F 103 IR V R VF Ta 1.6 103 Reverse current IR (µA) Forward current IF (mA) 102 −20°C Ta = 125°C 10 1 Ta = 125°C 10 75°C 1 10–1 10−1 10–2 10−2 25°C Forward voltage VF (V) 75°C 25°C 102 1.2 0.8 IF = 30 mA 0.4 3 mA 1 mA 0 0.4 0.8 1.2 0 Forward voltage VF (V) IR T a 20 25 30 10−1 120 160 IF(surge) tW 2.0 1.0 0 120 80 103 200 Forward surge current IF(surge) (A) 1 40 40 Ta = 25°C VR = 30 V 10 V 1V 10 0 Ambient temperature Ta (°C) Ct VR Terminal capacitance Ct (pF) Reverse current IR (µA) 15 3.0 Ambient temperature Ta (°C) 2 10 Reverse voltage VR (V) 102 10−2 −40 5 0 −40 0 10 20 Reverse voltage VR (V) SKH00114BED 30 IF(surge) tW 102 10 1 10 −1 10 −1 1 10 Pulse width tW (ms) 200 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP