PBSS5580PA 80 V, 4 A PNP low VCEsat (BISS) transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN complement: PBSS4580PA. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM Smaller required Printed-Circuit Board (PCB) area than for conventional transistors Exposed heat sink for excellent thermal and electrical conductivity Leadless small SMD plastic package with medium power capability 1.3 Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −80 V IC collector current - - −4 A ICM peak collector current single pulse; tp ≤ 1 ms - - −5 A RCEsat collector-emitter saturation resistance IC = −4 A; IB = −200 mA - 65 105 mΩ [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. [1] PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 2 1 sym013 2 Transparent top view 3. Ordering information Table 3. Ordering information Type number Package Name PBSS5580PA Description Version HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061 no leads; three terminals; body 2 × 2 × 0.65 mm 4. Marking Table 4. Marking codes Type number Marking code PBSS5580PA AF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). PBSS5580PA Product data sheet Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −80 V VCEO collector-emitter voltage open base - −80 V VEBO emitter-base voltage open collector - −7 V IC collector current - −4 A ICM peak collector current - −5 A IB base current Ptot total power dissipation single pulse; tp ≤ 1 ms Tamb ≤ 25 °C All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 - −600 mA [1] - 500 mW [2] - 1 W [3] - 1.4 W [4] - 2.1 W © NXP B.V. 2010. All rights reserved. 2 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. 006aab978 2.5 Ptot (W) (1) 2.0 1.5 (2) (3) 1.0 (4) 0.5 0.0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-a) PBSS5580PA Product data sheet Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 250 K/W [2] - - 125 K/W [3] - - 90 K/W [4] - - 60 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [4] Device mounted on a ceramic PCB, Al2O3, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 3 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 006aab979 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab980 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 4 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 006aab981 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab982 102 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 5 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −64 V; IE = 0 A - - −100 nA VCB = −64 V; IE = 0 A; Tj = 150 °C - - −50 μA ICES collector-emitter cut-off current VCE = −64 V; VBE = 0 V - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −2 V IC = −0.5 A 180 265 - IC = −1 A 160 240 - IC = −2 A 140 200 - [1] IC = −4 A VCEsat Product data sheet 110 - IC = −0.5 A; IB = −50 mA - −40 −60 mV IC = −1 A; IB = −50 mA [1] - −75 −120 mV IC = −4 A; IB = −400 mA [1] - −205 −320 mV IC = −4 A; IB = −200 mA [1] - −265 −420 mV - 65 105 mΩ RCEsat collector-emitter saturation resistance IC = −4 A; IB = −200 mA [1] VBEsat base-emitter saturation voltage IC = −1 A; IB = −10 mA [1] - −0.75 −0.9 V IC = −4 A; IB = −200 mA [1] - −0.95 −1.1 V [1] - −0.75 −0.9 V - 18 - ns - 82 - ns - 100 - ns VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A td delay time tr rise time ton turn-on time VCC = −9 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A ts storage time - 360 - ns tf fall time - 85 - ns toff turn-off time - 445 - ns fT transition frequency VCE = −10 V; IC = −100 mA; f = 100 MHz 70 110 - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz - 45 60 pF [1] PBSS5580PA collector-emitter saturation voltage 70 [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02. All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 6 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 006aac088 600 006aac089 −6.0 IB (mA) = −50 hFE IC (A) (1) −40 −30 −4.0 400 −45 −35 −25 −20 (2) −15 −10 −2.0 200 (3) −5 0 −10−1 −1 −10 −102 0.0 0.0 −103 −104 IC (mA) VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 6. DC current gain as a function of collector current; typical values 006aac090 −1.2 VBE (V) Fig 7. Collector current as a function of collector-emitter voltage; typical values 006aac091 −1.2 VBEsat (V) (1) −0.8 (1) −0.8 (2) (2) (3) (3) −0.4 −0.4 0.0 −10−1 −1 −10 −102 0.0 −10−1 −103 −104 IC (mA) VCE = −2 V −1 (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values Product data sheet −103 −104 IC (mA) (1) Tamb = −55 °C (2) Tamb = 25 °C PBSS5580PA −102 IC/IB = 20 (1) Tamb = −55 °C Fig 8. −10 Fig 9. Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 7 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 006aac092 −1 006aac093 −10 VCEsat (V) VCEsat (V) −1 −10−1 −10−1 (1) (1) (2) (2) (3) −10−2 −10−1 −1 −10 (3) −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 10. Collector-emitter saturation voltage as a function of collector current; typical values 006aac094 103 Fig 11. Collector-emitter saturation voltage as a function of collector current; typical values RCEsat (Ω) RCEsat (Ω) 102 102 10 10 (1) 1 006aac095 103 (1) 1 (2) (2) 10−1 10−1 (3) 10−2 −10−1 −1 −10 −102 (3) −103 −104 IC (mA) 10−2 −10−1 −1 (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 12. Collector-emitter saturation resistance as a function of collector current; typical values Product data sheet −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C PBSS5580PA −10 Fig 13. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 8 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 14. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −9 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A Fig 15. Test circuit for switching times PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 9 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 9. Package outline 1.3 0.65 max 0.35 0.25 1 1.05 0.95 2 0.45 0.35 1.1 0.9 0.3 0.2 2.1 1.9 3 1.6 1.4 Dimensions in mm 2.1 1.9 09-11-12 Fig 16. Package outline SOT1061 (HUSON3) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 PBSS5580PA [1] PBSS5580PA Product data sheet SOT1061 4 mm pitch, 8 mm tape and reel -115 For further information and the availability of packing methods, see Section 14. All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 10 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 11. Soldering 2.1 1.3 0.5 (2×) 0.4 (2×) 0.5 (2×) 0.6 (2×) 1.05 2.3 0.6 0.55 0.25 1.1 0.25 1.2 0.25 0.4 0.5 1.6 1.7 Dimensions in mm solder paste = solder lands solder resist occupied area sot1061_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint SOT1061 (HUSON3) PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 11 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS5580PA v.1 20100506 Product data sheet - - PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 12 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Export might require a prior authorization from national authorities. PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 13 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PBSS5580PA Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 6 May 2010 © NXP B.V. 2010. All rights reserved. 14 of 15 PBSS5580PA NXP Semiconductors 80 V, 4 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 May 2010 Document identifier: PBSS5580PA