TLHK4200 www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm (T-1) package • Small mechanical tolerances • Suitable for DC and high peak current • Small viewing angle • Very high intensity 19222 • Luminous intensity color categorized DESCRIPTION • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 This device has been designed to meet the increasing demand for AlInGaP technology. It is housed in a 3 mm clear plastic package. The small viewing angle of these devices provides a high brightness. APPLICATIONS All packing units are categorized in luminous intensity and color groups. That allows users to assemble LEDs with uniform appearance. • Off / on indicator • Status lights • Background illumination • Readout lights PRODUCT GROUP AND PACKAGE DATA • Maintenance lights • Product group: LED • Legend light • Package: 3 mm • Product series: standard • Angle of half intensity: ± 22° PARTS TABLE PART COLOR LUMINOUS INTENSITY WAVELENGTH FORWARD VOLTAGE at IF at IF at IF (mcd) (nm) (V) (mA) (mA) (mA) MIN. TYP. MAX. MIN. TYP. MAX. MIN. TYP. MAX. TECHNOLOGY TLHK4200 Red 25 100 - 10 - 630 - 10 - 1.9 2.6 20 AllnGaP on GaAs TLHK4200-AS12Z Red 25 100 - 10 - 630 - 10 - 1.9 2.6 20 AllnGaP on GaAs ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) TLHK4200 PARAMETER TEST CONDITION SYMBOL VALUE VR 5 V Tamb ≤ 60 °C IF 30 mA tp ≤ 10 μs IFSM 0.1 A Tamb ≤ 60 °C PV 80 mW Reverse voltage DC forward current Surge forward current Power dissipation Junction temperature UNIT Tj 100 °C Operating temperature range Tamb -40 to +100 °C Storage temperature range Tstg -55 to +100 °C Tsd 260 °C RthJA 400 K/W Soldering temperature Thermal resistance junction/ambient Rev. 2.1, 16-Mar-15 t ≤ 5 s, 2 mm from body Document Number: 83059 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TLHK4200 www.vishay.com Vishay Semiconductors OPTICAL AND ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) TLHK4200, RED TEST CONDITION SYMBOL MIN TYP. MAX UNIT Luminous intensity (1) PARAMETER IF = 10 mA IV 25 100 - mcd nm Dominant wavelength IF = 10 mA λd - 630 - Peak wavelength IF = 10 mA λp - 643 - nm Angle of half intensity IF = 10 mA ϕ - ± 22 - deg Forward voltage IF = 20 mA VF - 1.9 2.6 V Reverse voltage IR = 10 μA VR 5 - - V VR = 0 V, f = 1 MHz Cj - 15 - pF Junction capacitance Note (1) In one packing unit IVmin./IVmax. ≤ 0.5. LUMINOUS INTENSITY CLASSIFICATION GROUP LIGHT INTENSITY (mcd) STANDARD MIN. T 25 MAX. 50 U 40 80 V 63 125 W 100 200 X 130 260 Y 180 360 Z 240 480 Note • Luminous intensity is tested at a current pulse duration of 25 ms. The above type numbers represent the order groups which include only a few brightness groups. Only one group will be shipped on each bag (there will be no mixing of two groups on each bag). In order to ensure availability, single brightness groups will not be orderable. In a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag. In order to ensure availability, single wavelength groups will not be orderable. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 0° 10° 20° 50 40 30 20 10 0 0 95 10894 20 40 60 80 0.9 50° 0.8 60° 70° 0.7 100 T amb - Ambient Temperature (°C) Fig. 1 - Forward Current vs. Ambient Temperature for InGaN Rev. 2.1, 16-Mar-15 40° 1.0 ϕ - Angular Displacement 30° IV rel - Relative Luminous Intensity I F - Forward Current (mA) 60 80° 0.6 0.4 0.2 0 95 10041 Fig. 2 - Relative Luminous Intensity vs. Angular Displacement Document Number: 83059 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TLHK4200 www.vishay.com Vishay Semiconductors 10 IV rel - Relative Luminous Intensity IF - Forward Current (mA) 100 10 1 0.1 0.01 1 1 1.5 2 2.5 VF - Forward Voltage (V) 95 10878 9611588 10 100 IF - Forward Current (mA) Fig. 6 - Relative Luminous Intensity vs. Forward Current 1.6 1.2 1.0 Irel - Relative Intensity I V rel - Relative Luminous Intensity Fig. 3 - Forward Current vs. Forward Voltage 1.2 0.8 0.4 0.8 0.6 0.4 0.2 I F = 10 mA 0 0 20 40 60 80 100 0.0 600 96 12075 Tamb - Ambient Temperature (°C) 96 12077 Fig. 4 - Relative Luminous Intensity vs. Ambient Temperature Ispec - Specific Luminous Intensity 1 3 620 640 660 680 700 λ - Wavelength (nm) Fig. 7 - Relative Intensity vs. Wavelength 2.0 1.6 1.2 0.8 0.4 0.0 96 11589 1 2 5 1 0.5 0.2 10 20 0.1 0.05 50 IF (mA) 0.02 tp/T Fig. 5 - Relative Luminous Intensity vs. Forward Current/Duty Cycle Rev. 2.1, 16-Mar-15 Document Number: 83059 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TLHK4200 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters C Ø 3.2 ± 0.15 A AREA NOT PLANE 5.8 ± 0.3 34.4 ± 0.5 < 0.6 (2.5) 4.4 ± 0.3 3.4 ± 0.15 R1.4 (sphere) Ø 2.9 ± 0.15 + 0.15 2.54 nom. 0.4 - 0.05 1.5 ± 0.5 + 0.2 0.5 - 0.1 technical drawings according to DIN specifications Drawing-No.: 6.544-5255.01-4 Issue: 9; 28.07.14 TAPE REEL DIMENSIONS in millimeters 355 52 max. Diodes: anode before cathode Phototransistors: emitter before collector Code 21 90 Adhesive tape Identification label Reel Diodes: cathode before anode Phototransistors: collector before emitter Code 12 30 Paper Identification label: Vishay/type/group/tape code/production code/quantity Fig. 8 - Reel Rev. 2.1, 16-Mar-15 48 45 Tape 94 8671 948641 Fig. 9 - LED in Tape Document Number: 83059 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TLHK4200 www.vishay.com Vishay Semiconductors AMMOPACK Tape feed direction Diodes: cathode before anode Transistors: collector before emitter Label Tape feed direction Diodes: anode before cathode Transistors: emitter before collector 94 8667-2 Fig. 10 - Tape Direction Note • The new nomenclature for ammopack is e.g. ASZ only, without suffix for the LED orientation. The carton box has to be turned to the desired position: “+” for anode first, or “-” for cathode first. AS12Z and AS21Z are still valid for already existing types, BUT NOT FOR NEW DESIGN. TAPE DIMENSIONS in millimeters 12.7 ± 1 “X” 9 ± 0.5 12 ± 0.3 +1 18 - 0.5 3.81 ± 0.7 Ø 4 ± 0.2 0.9 max. 0.6 5.08 + - 0.1 0.6 2.54 + - 0.1 5.08 ± 0.7 6.35 ± 0.7 12.7 ± 0.2 Quantity per: “H” ±2 0.3 ± 0.2 ±1 Measure limit over 20 index-holes: ± 1 Reel (Mat.-no. 1764) 2000 21885 Rev. 2.1, 16-Mar-15 Option Dim. “H” ± 0.5 mm AS 17.3 Dim. “X” ± 0.5 mm Document Number: 83059 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000