MBR30L45CT thru MBR30L100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA TO-220AB Case: TO-220AB Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.9 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR 30L45CT 30L60CT 30L100CT UNIT Maximum repetitive peak reverse voltage VRRM 45 60 100 V Maximum RMS voltage VRMS 31 42 70 V Maximum DC blocking voltage VDC 45 60 100 V Maximum average forward rectified current IF(AV) 30 A Peak repetitive forward current (Rated VR, square wave, 20KHz) IFRM 30 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 220 A Peak repetitive reverse surge current (Note 1) IRRM 1 A Maximum instantaneous forward voltage (Note 2) IF=15A, TJ=25℃ IF=15A, TJ=125℃ Maximum reverse current @ Rated VR TJ=25 ℃ TJ=100 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR dV/dt 0.55 0.60 0.77 0.50 0.56 0.67 0.40 0.48 0.50 200 150 32 10000 V mA V/μs O RθJC 1 TJ - 55 to +150 O C - 55 to +175 O C TSTG C/W Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1309001 Version: K13 MBR30L45CT thru MBR30L100CT Taiwan Semiconductor CREAT BY ART ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED MBR30LxxCT (Note 1) Prefix "H" GREEN COMPOUND CODE C0 Suffix "G" PACKAGE PACKING TO-220AB 50 / Tube Note 1: "xx" defines voltage from 45V (MBR30L45CT) to 100V (MBR30L100CT) EXAMPLE AEC-Q101 PREFERRED P/N PART NO. MBR30L100CT C0 MBR30L100CT C0 MBR30L100CT C0G MBR30L100CT C0 MBR30L100CTHC0 MBR30L100CT QUALIFIED PACKING CODE H GREEN COMPOUND DESCRIPTION CODE Green compound G C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG AVERAGE FORWARD A CURRENT (A) 35 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 5 0 0 25 50 75 100 125 150 PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 250 8.3ms Single Half Sine Wave JEDEC Method 200 150 100 50 0 1 10 CASE TEMPERATURE (oC) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG REVERSE LEAKAGE CURRENT (mA) FORWARD CURRENT (A) 30L45CT TJ=125℃ 30L60CT-100CT TJ=125℃ 30L45CT TJ=25℃ 1 30L60CT-100CT TJ=25℃ 0.1 0.1 0.2 0.3 0.4 0.5 0.6 FORWARD VOLTAGE (V) Document Number: DS_D1309001 0.7 0.8 FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 100 10 100 NUMBER OF CYCLES AT 60 Hz 0.9 TJ=125℃ 10 1 TJ=25℃ 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: K13 MBR30L45CT thru MBR30L100CT Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG 10 TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 30L45CT 1000 30L60CT-100CT 100 0.1 1 10 100 1 0.1 0.01 0.1 1 REVERSE VOLTAGE (V) 10 100 T-PULSE DURATION(s) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 13.19 14.79 0.519 0.582 H 2.41 2.67 0.095 0.105 I 4.42 4.76 0.174 0.187 J 1.14 1.40 0.045 0.055 K 5.84 6.86 0.230 0.270 L 2.20 2.80 0.087 0.110 M 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Specific Device Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309001 Version: K13 MBR30L45CT thru MBR30L100CT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309001 Version: K13