MBR6035PT thru MBR60100PT Taiwan Semiconductor CREAT BY ART FEATURES Dual Common Cathode Schottky Rectifier - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-247AD (TO-3P) MECHANICAL DATA Case: TO-247AD (TO-3P) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 10 in-lbs maximum Weight: 6.1 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR MBR 6035 6045 6050 6060 6090 60100 PT PT PT PT PT PT 100 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 Maximum RMS voltage VRMS 24 31 35 42 63 70 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 V Maximum average forward rectified current IF(AV) 60 A Peak repetitive forward current (Rated VR, Square wave, 20KHz) IFRM 60 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 420 A Peak repetitive reverse surge Current (Note 1) IRRM 1 A Maximum instantaneous forward voltage (Note 2) IF=30A, TJ=25℃ IF=30A, TJ=125℃ IF=60A, TJ=25℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change,(Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range VF IR dV/dt 0.70 0.75 0.84 0.60 0.65 - 0.82 0.93 0.98 1 30 20 10,000 10 V V mA V/μs O RθJC 1.2 TJ - 55 to +150 O C - 55 to +150 O C TSTG C/W Note 1: 2.0μs Pulse Width, f=1.0KHz Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle Document Number: DS_D1309035 Version: G13 MBR6035PT thru MBR60100PT Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. PACKING CODE QUALIFIED MBR60xxPT (Note 1) Prefix "H" GREEN COMPOUND C0 CODE Suffix "G" PACKAGE PACKING TO-3P 30 / Tube Note 1: "xx" defines voltage from 35V (MBR6035PT) to 100V (MBR60100PT) EXAMPLE AEC-Q101 PACKING CODE PREFERRED P/N PART NO. MBR6060PT C0 MBR6060PT C0 MBR6060PT C0G MBR6060PT C0 MBR6060PTHC0 MBR6060PT QUALIFIED H GREEN COMPOUND CODE G DESCRIPTION Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) PEAK FORWARD SURGE CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE AVERAGE FORWARD A CURRENT (A) 75 60 45 30 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 15 0 0 50 100 FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 600 8.3ms Single Half Sine Wave JEDEC Method 500 400 300 200 100 0 1 150 10 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 100 MBR6035PT-MBR6045PT MBR6050PT-MBR60100PT 1000 Pulse Width=300μs 1% Duty Cycle TJ=125℃ MBR6050PT-60100PT TJ=25℃ MBR6050PT-60100PT 10 TJ=125℃ MBR6035PT-6045PT 1 TJ=25℃ MBR6035PT-6045PT 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1309035 1 1.1 1.2 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) FIG. 3 TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS PER LEG 100 100 10 TJ=125℃ 1 TJ=75℃ 0.1 TJ=25℃ 0.01 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: G13 MBR6035PT thru MBR60100PT Taiwan Semiconductor CREAT BY ART FIG. 5 TYPICAL JUNCTION CAPACITANCE PER LEG MBR6035PT-MBR6045PT MBR6050PT-MBR6060PT MBR6090PT-MBR60100PT 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 10 1000 100 0.1 1 10 100 1 0.1 0.01 0.1 REVERSE VOLTAGE (V) 1 10 100 T-PULSE DURATION (sec) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A 15.90 16.40 0.626 0.646 B 7.90 8.20 0.311 0.323 C 5.70 6.20 0.224 0.244 D 20.80 21.30 0.819 0.839 E 3.50 4.10 0.138 0.161 F 19.70 20.20 0.776 0.795 G - 4.30 - 0.169 H 2.90 3.40 0.114 0.134 I 1.93 2.18 0.076 0.086 J 2.97 3.22 0.117 0.127 K 1.12 1.22 0.044 0.048 L 5.20 5.70 0.205 0.224 M 4.90 5.16 0.193 0.203 N 2.70 3.00 0.106 0.118 O 0.51 0.76 0.020 0.030 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1309035 Version: G13 MBR6035PT thru MBR60100PT Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1309035 Version: G13