1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung 10 Ø2 30 Type 12 A 50 ... 1000 V Metal case Metallgehäuse DO-4 Weight approx. – Gewicht ca. 5.5 g Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1199AR) 10 SW11 M5 Standard packaging: bulk Standard Lieferform: lose im Karton Dimensions - Maße [mm] Maximum ratings Type Typ Grenzwerte Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1N1199A = PBY271 50 60 1N1200A = PBY272 100 120 1N1202A = PBY273 200 240 1N1204A = PBY274 400 480 1N1206A = PBY275 600 720 1N3671 = PBY276 800 1000 1N3673 = PBY277 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 85°C IFAV 12 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 40 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 200/240 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 240 A2s Tj TS -65...+175°C -65...+175°C Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur 1 Max. case temperature TC = 85°C – Max. Gehäusetemperatur TC = 85°C © Diotec Semiconductor AG http://www.diotec.com/ 1 1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 Characteristics Kennwerte Forward Voltage – Durchlass-Spannung Tj = 25°C IF = 30 A VF < 1.5 V Leakage Current – Sperrstrom Tj = 25°C VR = VRRM IR < 100 µA RthC < 2 K/W Thermal Resistance Junction – Case Wärmewiderstand Sperrschicht – Gehäuse Recommended mounting torque Empfohlenes Anzugsdrehmoment 10-20 UNF M5 120 18 ± 10% lb.in. 2 ± 10% Nm 3 10 [%] [A] 100 2 10 80 10 60 Tj = 25°C Tj = 125°C 40 1 20 IF IFAV 0 0 TC 100 50 150 10-1 [°C] Rated forward current versus case temperature Zul. Richtstrom in Abh. von der Gehäusetemp. 220a-(30a-1,5v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) 103 [A] 2 10 îF 10 1 © Diotec Semiconductor AG 10 102 [n] 103 Peak forward surge current versus number of cycles at 50 Hz Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz http://www.diotec.com/ 2